HVV0912-150 HVV0912-150-EK EG-01-DS11B 100B390JP500X 100B3R3JP500X

The innovative Semiconductor Company! HVV0912-150 HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES · Silicon MOSFET Technology · Operation from 24V to 50V · High Power Gain · Extreme Ruggedness · Internal Input Matching · Excellent Thermal Stability · All Gold Bonding Scheme · Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in L-band including G-DME, A-DMA, IFF, and TCAS applications. Class AB FREQUENCY VDD IDQ Power GAIN (%) IRL (MHz) MODE (V) (mA) (W) (dB) (%) (dB) 1215 50 100 150 20 43 -7 VSWR 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10µs and pulse duty cycle = 10%. DESCRIPTION The high power HVV0912-150 HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications at L-Band from 960MHz to 1215MHz. The high voltage HVVFETTM technology produces over 150W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV0912-150 HVV0912-150 Evaluation Kit Part Number: HVV0912-150-EK HVV0912-150-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11B EG-01-DS11B 05/28/09 1 The innovative Semiconductor Company! HVV0912-150 HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM THERMAL/RUGGEDNESS PERFORMANCE ABSOLUTE MAXIMUM RATING (IEC 134) Symbol Parameter Value Unit VDSS Drain-Source Voltage 95 V VGSS Gate-Source Voltage -10, 10 V IDS(max) PD1 Pin TS TJ Drain Current Power Dissipation Input Power Storage Temperature Junction Temperature 14 1345 5 -40 to +150 200 A W W °C °C Symbol Parameter Max Unit 0JC2 Thermal Resistance 0.13 °C/W Symbol Parameter Test Condition Max Units LMT2 F = 1215 MHz 20:1 VSWR Load Mismatch Tolerance The HVV0912-150 HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA Min IDSS Drain Leakage Current VGS=0V,VDS=50V IGSS G P2 IRL2 D2 VGS(Q)3 VTH Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Gate Quiescent Voltage Threshold Voltage VGS=5V,VDS=0V F=1215MHz F=1215MHz F=1215MHz VDD=50V,IDQ=100mA VDD=5V, ID=300µA Max Unit 95 Typical 102 - V - 50 100 µA 18 41 1.1 0.7 10 20 -7 43 1.45 1.2 100 -3.5 1.8 1.7 nA dB dB % V V PULSE CHARACTERISTICS Symbol Parameter Conditions Min Typical Max Unit tr Rise Time F=1215MHz -