HVV0405-175 HVV0405-175-EK EG-01-DS10A 100B221JP500X GRM32ER72A105MA01L

HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300s Pulse, 10% Duty Cycle For UHF band,

The innovative Semiconductor Company! HVV0405-175 HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features · Silicon MOSFET Technology · Operation from 24V to 50V · High Power Gain · Extreme Ruggedness · Internal Input Matching · Excellent Thermal Stability · All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the UHF band including weather and long range radar applications. MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL (MHz) (V) (mA) (W) (dB) (%) (dB) 450 50 50 175 25 55 20:1 Class AB Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 300s and pulse period = 3ms. DESCRIPTION The high power HVV0405-175 HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFETTM technology produces over 175W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV0405-175 HVV0405-175 Demo Kit Part Number: HVV0405-175-EK HVV0405-175-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS10A EG-01-DS10A 12/11/08 1 The innovative Semiconductor Company! HVV0405-175 HVV0405-175 High Voltage, High Ruggedness HVV0405-175 HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor HVV0405-175 HVV0405-175 High UHF Pulsed Power Transistor Duty Cycle Voltage, High Ruggedness 400-500 MHz, 300µs Pulse, 10% 400-500 MHz, 300µs Pulse, 10%Pulsed Power Transistor For UHF band, Weather andUHF Duty Cycle Long Range Radar Applications 400-500Range Radar Applications For UHF band, Weather and Long MHz, 300s Pulse, 10% Duty Cycle TM For UHF band, Weather and Long Range Radar Applications ELECTRICAL CHARACTERISTICS %ELECTRICAL CHARACTERISTICS Duty ELECTRICAL CHARACTERISTICS Conditions % Symbol Parameter Duty The innovative Semiconductor Company! The innovative Semiconductor Company! VBR(DSS) Drain-Source Symbol Parameter Breakdown Symbol Parameter IBR(DSS) VDSS VBR(DSS) I DSS IIGSS DSS GP1 IGSS1 GSS IIRL G 11 GPP1 1 D IRL IRL1 VGS(Q)2 D1 D1 VTH VGS(Q)2 VGS(Q)2 VTH VTH Drain Leakage Current Drain-Source Breakdown Drain-Source Breakdown Gate Leakage Current Drain Leakage Current Drain Leakage Current Power Gain Gate Leakage Current Gate Leakage Loss Input Return Current Power Gain Power Gain Drain Efficiency Input Return Loss Input Return Loss Gate Quiescent Voltage Drain Efficiency Drain Efficiency Threshold Voltage Gate Quiescent Voltage Gate Quiescent Voltage Threshold Voltage Threshold Voltage VGS=0V,ID=5mA Conditions Conditions VGS=0V,VDS=48V VGS=0V,ID=5mA VGS=0V,ID=5mA VGS=5V,VDS=0V VGS=0V,VDS=48V VGS=0V,VDS=48V F=450MHz VGS=5V,VDS=0V VGS=5V,VDS=0V F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz VDD=50V,IDQ=50mA F=450MHz F=450MHz ID=300µA VDD=5V, VDD=50V,IDQ=50mA VDD=50V,IDQ=50mA VDD=5V, ID=300µA VDD=5V, ID=300A PULSE CHARACTERISTICS Pulse CHARACTERISTICS PULSE CHARACTERISTICS Symbol Parameter Symbol Parameter t1 Rise Time r Symbol Tr1 tf 1 tr 1 1 PD Tf1 tf 1 1 Conditions Conditions F=450MHz PD PD Parameter Rise Time Fall Time Rise Time FallPulse Droop Time Fall Time Pulse Droop Pulse Droop Conditions F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz F=450MHz Symbol Parameter Max Parameter Thermal Resistance Max 0.40 0.40 23 52 1.1 0.7 Min Min - Typical 50 102 1 50 200 25 1 5 -7 25 55 -7 -4 1.45 55 1.2 1.45 1.8 1.2 1.7 Max Unit Max 200 V 5 200 A 5 A -4 dB -4 dB 1.8 % 1.7 1.8 V 1.7 V Unit V Unit µA V µA µA dB µA dB dB % dB V % V V V Max Units Unit nS 50 50 Max nS Units 50 nS 50 nS 50 0.5 nS nS dB 50 0.5 0.5 dB dB Typical Max