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HVM306 Datasheet

Part Manufacturer Description PDF Type
HVM306 Hitachi Semiconductor Silicon Epitaxial Planar Diode for Lowpass Circuit Original
HVM306 Renesas Technology Silicon Epitaxial Planar Diode for Lowpass Circuit Original
HVM306 N/A The Diode Data Book with Package Outlines 1993 Scan
HVM306 N/A High Frequency Device Data Book (Japanese) Scan

HVM306

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit â'¢ High capacitance ratio, (n = , mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVM306 T9 MPAK , Junction temperature Tj 125 °C Storage temperature Tstg -55 to+125 °C HVM306 Electrical , Forward current Vs. Forward voltage 2 HITACHI HVM306 Fig.2 Reverse current Vs. Reverse voltage , Reverse voltage Vr (V) Fig.3 Capacitance Vs. Reverse voltage (1) HITACHI 3 HVM306 f = 1Mh -
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SC-59A C2/C25 470MH
Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit HITACHI Features · · · · High capacitance ratio. (n=10min) Low series resistance. Low cost. MPAK package is suitable for high density , View) HVM306 T9 MPAK Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit Reverse , /C25 C =9 pF, f = 470MHz H5Ï Ï T P - Lowpass Circuit HVM306 Forward current I p (mA , .4 Capacitance Vs. Reverse voltage HVM306 Fig.5 Series resistance Vs. Reverse voltage Fig.6 Linearity -
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Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit Preliminary Rev. 1 Jun. 1992 Features · · · · Pin Arrangement High capacitance ratio. (n=10min) Low series resistance. Low , HVM306 1 Anode MPAK 3 Cathode Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value , HVM306 10 Reverse current I R (nA) 10 1.0 Forward current I F (mA) 10 -1 10 10-2 , 0 0.5 1 10 Reverse voltage VR (V) Fig.4 Capacitance Vs. Reverse voltage 30 HVM306 Hitachi Semiconductor
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Hitachi DSA00497
Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit Preliminary Rev. 1 Jun. 1992 , Type No. Laser Mark Package Code HVM306 T9 MPAK Pin Arrangement 3 2 (Top View , temperature Tstg ­55 to +125 °C HVM306 Electrical Characteristics (Ta = 25°C) Item Symbol , ) Fig.1 Forward current Vs. Forward voltage 2 HVM306 10 2 10 Reverse current I R (nA , HVM306 60 f = 1MHz Capacitance C (pF) 50 40 30 20 10 0 0.5 1 10 Reverse Hitachi Semiconductor
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Hitachi DSA001652
Abstract: HVM306-Silicon Epitaxial Planar Diode for Lowpass Circuit Features · · · · High capacitance ratio. (n=10min) Low series resistance. Low cost. MPAK package is suitable for high density surface mounting and high speed assembly. Laser Mark T9 Pin Arrangement Ordering Information Type No. HVM306 t j2 S Unit Q i. "hn 1 Anode 2 Anode 3 Cathode (Top View , » out sssss/ss Lowpass Circuit 403 HVM306 404 HVM306 405 -
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HVM306------------------S
Abstract: . HVM131SR . HVM132 . HVM132WK HVM187S . HVM187WK HVM306 . HVR100 . HVU12 . -
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HSK277 HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B
Abstract: Electronic tuning HVM11 HVM15 HVM16 HVM25 HVM27WK HVM306 HVR100 HVU12 HVU200A HVU202A HVU300A -
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1S2076A 1SS86 1SS106 1SS174 HSM126S HVC308A HSM8 pin diode do35 DO-35 rectifier lld zener DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C
Abstract: HVM187S HVM187WK HVM306 HVR100 HVU12 HVU17 HVU89 HVU131 HVU132 HVUt33 HVU187 HVU200A HVU202A Page -
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1SS119 1SS172 1S1146 1S2074 1S2075 1S2076 1SS81 1SS82
Abstract: DIODE llg^-IS JüS ÎP lÜ E ?^:# " i ^ - K Application Package code MPAK BS/CS Tuner Tuning URP UFP VCO UHF Tuning URP URP UFP Type No. HVM11 HVM15 HVU12 HVU314 HVU316 HVC317B HVU356 HVU202A HVC202A HVU200A HVU300A HVU306A HVU307 HVU315 HVU363A HVC200A HVC300A HVC306A HVC363A HVM306 HVK89 HVU89 HVU30BA HVC308A HVU17 HVU350 HVU350B MVU351 HVU355 HVU355B HVU357 HVU358 HVU359 HVU362 HVU365 HVC350B HVC351 HVC355B HVC367 L HVC358B HVC359 HVC362 HVC365 HVC369B HVC372B HVM17 HVM17WA HVM16 HVM25 HVM27WK HVR100 -
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HVM100
Abstract: HVM17WA HVM25 HVM27WK HVM121WK HVM131S HVM131SR HVM132WK HVM187S HVM187WK HVM306 HZM6.2ZWA HZM6 -
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DIODE marking Sl s6 68a diode diode marking b2 b1391 diode MARKING A9 MARKING 62Z HRW0202A HRW0202B HRW0203A HRW0302A HRW05 HSM83
Abstract: 42.35, C28 = 2.361 - 2.754 HVC363B 32 C1 = 36.0 - 42.0, C 28 = 2.36 - 2.75 MPAK HVM306 30 C2 = Hitachi Semiconductor
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transistor 2sk MESFET Application hitachi mosfet audio application note uhf tv booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI DO-34 HSM276S HSC276S HSC276 HSU276 HSC277
Abstract: HVM17WA HVM25 HVM27WK HVM121WK HVM131S HVM131SR HVM132WK HVM187S HVM187WK HVM306 HZM6.2ZWA HZM6 -
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470M 100MH