NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| HVM306 | Hitachi Semiconductor | Silicon Epitaxial Planar Diode for Lowpass Circuit |
3 pages, |
Original |  |
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| HVM306 | N/A | The Diode Data Book with Package Outlines 1993 |
2 pages, |
Scan | |
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| HVM306 | N/A | High Frequency Device Data Book (Japanese) |
1 pages, |
Scan | |
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| HVM306 | Renesas Technology / Hitachi Semiconductor | Silicon Epitaxial Planar Diode for Lowpass Circuit |
5 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit • High capacitance ratio, (n = 10min , and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVM306 T9 MPAK Pin , temperature Tj 125 °C Storage temperature Tstg -55 to+125 °C HVM306 Electrical Characteristics (Ta = , HVM306 Fig.2 Reverse current Vs. Reverse voltage - f iMu7r Reverse voltage Vr (V) Fig.3 Capacitance Vs. Reverse voltage (1) HITACHI 3 HVM306 f = 1Mh ... | OCR Scan |
5 pages, |
SC-59A HVM306 HVM306 abstract |
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| Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit Preliminary Rev. 1 Jun. 1992 , Type No. Laser Mark Package Code HVM306 T9 MPAK Pin Arrangement 3 2 (Top View , temperature Tstg 55 to +125 °C HVM306 Electrical Characteristics (Ta = 25°C) Item Symbol , ) Fig.1 Forward current Vs. Forward voltage 2 HVM306 10 2 10 Reverse current I R (nA) 3 , 10 Reverse voltage VR (V) 30 Fig.3 Capacitance Vs. Reverse voltage (1) 3 HVM306 60 f ... | Original |
5 pages, |
HVM306 HVM306 abstract |
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| Abstract: HVM306 Silicon Epitaxial Planar Diode for Lowpass Circuit Preliminary Rev. 1 Jun. 1992 Features · · · · Pin Arrangement High capacitance ratio. (n=10min) Low series resistance. Low , HVM306 1 Anode MPAK 3 Cathode Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value , HVM306 10 Reverse current I R (nA) 10 1.0 Forward current I F (mA) 10 -1 10 10-2 , 0 0.5 1 10 Reverse voltage VR (V) Fig.4 Capacitance Vs. Reverse voltage 30 HVM306 ... | Original |
3 pages, |
SC-59A HVM306 HVM306 abstract |
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| Abstract: 42.35, C28 = 2.361 - 2.754 HVC363B HVC363B 32 C1 = 36.0 - 42.0, C 28 = 2.36 - 2.75 MPAK HVM306 30 C2 = ... | Original |
41 pages, |
VCO 9GHZ 10GHZ Hitachi audio mosfet application HITACHI tuner 3SK191 hvm15 varicap 1SS110 Dual-Gate Mosfet booster gsm antenna audio video uhf transmitter circuit Tv tuner Diagram fet tr gsm 900 dual band signal booster AM FM TUNER module datasheet abstract |
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| Abstract: ér^say-í t- K + -21- - « il B ft * SÈ fê « ? Pal S *(pF)/g » tt m m t y ft 8 i « g SE«« *'(V) & 'h m m g -k • HVK89 HVK89 BÍZ MiÉ : VHF/UHF TV fa-t AFC Vr(V) 32 2 10.5 16.0 rsâl. 3Q (C=12. 5pF, f=50MHz) K A TjCC) 150 5 5.7 10 3.3 5. 7 2.0/10.0 2.5 3.0 1HVMI1 Ru SÄ : UHF/SHF TV ^-^«flsliiffl -- S/N >ffo VdÍVÍ 32 1 3. 6 5.6 PsSl. 5fl (Vr=2V, f= 100MHz) 1 Pill) 150 15 0. 9 ctffi) Tj CC) 125 30 0.5 0.9 1.0/30.0 4.0 2 u u 1 •HVM15 HVM15 ai ff ... | OCR Scan |
1 pages, |
HVM27WK HVM25 HVM15 HVK89 470M HVK89 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| HVM306 | Hitachi Semiconductor | Dual Varactor Diode with Common Cathode | |