HUR30100 HUR30120 - Datasheet Archive

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C Millimeter Min. Max.

HUR30100 HUR30100, HUR30120 HUR30120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C Millimeter Min. Max. Inches Min. Max. A B C 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D A 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F VRSM V 1000 1200 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N Test Conditions 5.49 6.2 J K VRRM V 1000 1200 4.32 5.4 G H A=Anode, C=Cathode, TAB=Cathode HUR30100 HUR30100 HUR30120 HUR30120 Dim. 1.5 2.49 0.087 0.102 Maximum Ratings Unit IFRMS IFAVM TC=115oC; rectangular, d=0.5 70 30 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 200 A 14 mJ 1.2 A EAS IAR o TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive -55.+175 175 -55.+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight o C 165 0.8.1.2 . Nm 6 typical W g HUR30100 HUR30100, HUR30120 HUR30120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 250 1 uA mA VF IF=30A; TVJ=150oC TVJ=25oC 1.78 2.74 V RthJC RthCH trr IRM 0.9 0.25 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC 40 o VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C 5.5 K/W ns 11.4 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch . HUR30100 HUR30100, HUR30120 HUR30120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V C TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 IF= 60A IF= 30A IF= 15A 2 IF= 60A IF= 30A IF= 15A 30 20 20 1 10 10 0 0 1 2 3 V 0 100 4 0 A/us 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 220 1.2 TVJ= 100°C IF = 30A tfr 0.8 VFR IF= 60A IF= 30A IF= 15A 1.0 160 us tfr 80 180 IRM 600 A/us 1000 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt VFR trr Kf 400 V 200 1.5 200 120 TVJ= 100°C VR = 600V ns 0 40 0.4 0.5 140 Qr 0.0 120 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 A/us 1000 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 2 0.0 600 A/us 1000 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation .A: 1 i K/W 1 2 3 ZthJC 0.1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 Constants for ZthJC calculation .AR: i 0.01 0.001 0.00001 1 2 3 4 0.0001 0.001 0.01 s 0.1 t Fig. 7 Transient thermal resistance junction to case . 1 Rthi (K/W) ti (s) 0.368 0.1417 0.0295 0.5604 0.0052 0.0003 0.0004 0.0092