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Part : HSC276TRF-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 68,000 Best Price : $0.12 Price Each : $0.15
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HSC276 Datasheet

Part Manufacturer Description PDF Type
HSC276 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original
HSC276 Kexin Silicon Schottky Barrier Diode Original
HSC276 Renesas Technology Silicon Schottky Barrier Diode for Detector and Mixer Original
HSC276 Renesas Technology DIODE SCHOTTKY V 0.03A 2SC-79 Original
HSC276 Renesas Technology Silicon Schottky Barrier Diode for Mixer Original
HSC276 TY Semiconductor Silicon Schottky Barrier Diode - SOD-523 Original
HSC276A Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original
HSC276A Renesas Technology DIODE SCHOTTKY 5V 0.03A 2UFP Original
HSC276A Renesas Technology Silicon Schottky Barrier Diode for Mixer Original

HSC276

Catalog Datasheet MFG & Type PDF Document Tags

Hitachi DSA00772

Abstract: HSC276 ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline · High forward current, Low capacitance. · Ultra small Flat Package (UFP , . Laser Mark Package Code HSC276 C2 1. Cathode 2. Anode UFP Absolute Maximum Ratings , 1 pulse. HSC276 -2 10 10 -3 Reverse current I R (A) Forward current I F (A , 10 -2 10 5 HSC276 Unit: mm Package Dimensions Cathode Mark 1 Cathode 2 Anode
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Original
Hitachi DSA00772 SC-79
Abstract: HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter HITACHI ADE-208-421A (Z) R ev. 1 Features â'¢ High forward current, Low capacitance. â'¢ Ultra small Flat Package (UFP) is , HSC276 C2 UFP Outline Cathode mark Mark 1C !C2! H 2 1. Cathode 2. Anode HSC276 , > 10O^iA at VR= 0.5V HITACHI VR= 0.5V HSC276 HITACHI 3 HSC276 4 HITACHI HSC276 Package Dimensions Unit: mm Cathode Mark / - C2 1.2 ±0.10 1.6 ± 0.10 o O o LT -
OCR Scan

HSC276

Abstract: Hitachi DSA002712 HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter ADE-208-421A (Z) Rev. 1 , mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item , criterion; IR 100µA at VR = 0.5V 2 HSC276 10 ­2 Forward current I F (A) 10 ­3 10 ­4 , 1 4 3 2 Reverse voltage VR (V) 5 Fig.2 Reverse current Vs. Reverse voltage 3 HSC276
Hitachi Semiconductor
Original
Hitachi DSA002712 c2 mark

diode hitachi schottky

Abstract: HSC276 HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev. 1 Dec. 1998 Features · , design. Ordering Information Type No. Laser Mark Package Code HSC276 C2 UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25 , at VR =0.5 V Rev.1, Dec. 1998, page 2 of 5 HSC276 Main Characteristic -2 10 -3 10 , . 1998, page 3 of 5 HSC276 Package Dimensions Unit : mm Cathode Mark C2 1.2 ± 0.10 1.6 ± 0.10
Hitachi Semiconductor
Original
diode hitachi schottky DSA003642 D-85622
Abstract: ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter HITACHI Features · High forward current, Low capacitance. · Ultra small Flat package (UFP) is suitable for surface , . HSC276 Laser Mark C2 Package Code UFP 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25 , reverse * Failure criterion ; Ir > 100|jA at VR =0.5 V í HSC276 10 -2 < c c 10 -3 , 10 HSC276 Package Dimensions Unit: mm Cathode Mark | C 2 in o " o T o o -H ·H CO -
OCR Scan

RS323

Abstract: HSC276 Spice parameter * Model generated on Oct 22, 96 * MODEL FORMAT: SPICE3, PSPICE apply. * UCB DIODE Model .MODEL HSC276 D +IS=2.0189E-6 +BV=3 +VJ=0.3 +KF=0 +XTI=3 +TT=1.0E-9 +RS=3.23 +IBV=3.146511E-5 +M=0.19 +AF=1 +EG=1.17 +N=1.08 +CJO=7.8E-13 +FC=0.5 * END of HSC276 (Schottky barrier diodes for detectors & mixers) * IS: Saturation current, Unit:A * BV: Rev.breakdown voltage, Unit:V * VJ: Junction potential, Unit:V * KF: Flicker noise coefficient * XTI: Isat temperature exp. * TT: Transit time
Hitachi Semiconductor
Original
RS323

Hitachi DSA002789

Abstract: ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features · High forward current, Low capacitance. · Ultra small Flat Package (UFP) is suitable , Information Type No. HSC276 Laser Mark C2 Package Code UFP Absolute Maximum Ratings (Ta = 25°C) Item , ; IR 100µA at VR =0.5 V HSC276 10 -2 10 -2 Forward current I F (A) 10 -4 , HSC276 Package Dimensions Unit: mm Cathode Mark C2 1.2 ± 0.10 1.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10
Hitachi Semiconductor
Original
Hitachi DSA002789

MARK SD DIODE

Abstract: HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features · · Outline Cathode mark High forward current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP 1>=f LJ I Mark 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item R e verse voltage , pulse. * Failure criterion ; Ip > 100|iA at V r =0.5 V 247 HSC276 < c cc c 0) 3 O o
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OCR Scan
MARK SD DIODE

HSC276

Abstract: products contained therein. HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev , HSC276 C2 UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 , Notes 1. Failure criterion ; IR 100µA at VR =0.5 V Rev.1, Dec. 1998, page 2 of 2 HSC276 Main , . Reverse voltage Rev.1, Dec. 1998, page 3 of 3 HSC276 Package Dimensions Unit : mm Cathode Mark , -79 0.0016 HSC276 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi
Hitachi Semiconductor
Original

HSC276

Abstract: HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE , Package Code HSC276 C2 UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item , Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main Characteristics 10­2 10­2 10­3 10­3 , . Reverse voltage HSC276 Package Dimensions As of January, 2003 1.2 ± 0.10 0.13 ± 0.05 1.6
Renesas Technology
Original

Hitachi DSA0047

Abstract: HSC276 HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features · , design. Ordering Information Type No. Laser Mark Package Code HSC276 C2 UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25 , at VR =0.5 V 2 HSC276 Main Characteristic -2 -3 10 10 -4 10 10 -2 , voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSC276 Package Dimensions Unit : mm
Hitachi Semiconductor
Original
Hitachi DSA0047

HSC276

Abstract: . HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE , Package Code HSC276 C2 UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item , Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main Characteristics 10­2 10­2 10­3 10­3 , . Reverse voltage HSC276 Package Dimensions As of January, 2003 1.2 ± 0.10 0.13 ± 0.05 1.6
Renesas Technology
Original
Abstract: HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE , (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 , .10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified , criterion ; IR 100 µA at VR = 0.5 V Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main , Rev.2.00, Nov.10.2003, page 3 of 4 HSC276 Package Dimensions As of January, 2003 Unit: mm Renesas Technology
Original
Abstract: Product specification HSC276 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features High forward current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package (UFP) is suitable for surface mount design. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e V o lta g e VR 3 V A v e ra g e re c tifie d c u rre n t IO TY Semiconductor
Original

marking c2 diode

Abstract: diode marking c2 Diodes SMD Type Silicon Schottky Barrier Diode HSC276 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features High forward current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package (UFP) is suitable for surface mount design. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e V o lta g e VR 3 V A v e ra g e re c
Kexin
Original
marking c2 diode diode marking c2 marking c2 SOD523 marking c2 MARKING C2 SOD523 ultra low forward voltage diode

HSK277

Abstract: . 355 HSB88WS. 245 HSC276 . 247 HSC277
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OCR Scan
HSK277 HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B

HVU12

Abstract: HSM126S HSM198S HSM276S HSM276SR SMD2 URP HSU88 HSU276 UFP ERP HSE11'2 HSC276 Insertion Type DO-35 1SS86
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OCR Scan
1S2076A 1SS106 1SS174 HSM126S HVU12 HVC308A DO-35 rectifier HSM8 pin diode do35 HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C

iss86

Abstract: 1SS119 issæ 1SS165 1SS174 HSU88 HSU276 HSC276 HSM88AS HSM88ASR HSM88WA HSM88WK HSM198S HSM198SR HSM276S r
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OCR Scan
1SS119 iss86 1SS108 1SS196 1SS199 HSR101 ISS86 DO-41

1SS106

Abstract: 1SS172 HRW2502A © HHW25Q2A© HRW2S02B HSB83J HSB88WS HSB123 HSB124S-J HSB2836 HSB2838 HSC276 HSC277 HSK83 HSK110
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OCR Scan
1SS172 1S1146 1S2074 1S2075 1S2076 1SS81 1SS82

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 HVU316 HVB27WK HVM27WK HVM16 HVR100 HVU308A HSM2692 HSM2693A HSM2694 HSC277 HSU277 HSC276
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Original
MA151WK 1SS211 ISS376 DA323K IPS302 diode cross reference 1s1555 diode cross reference 1s2473 1S2473 DIODE equivalent 1S2473 DIODE 1S1555 1S1588 1SS104 1S1553 1S1554 1S953

diode 368b

Abstract: HUV132 HSU88 HSU227 HSC276 [Vf (V)] max [0.58] (0.35) 35,0 Vf(V) [If(mA)] [10] [1] 0.5 C (pF) max 0,8
Hitachi Semiconductor
Original
diode 368b HUV132 HUV131 HVC376B diode varicap 5.8 Ghz 358B 100MH HVC138 HVC135 HVC131 HVC132 HVC139

marking code 62z

Abstract: philips surface mount zener diode v6 HSB276AS HSB276AYP HSB276S HSB278S HSB0104YP HSC88 HSC119 HSC226 HSC276 HSC276A HSC277 HSC278 HSD88 HSD276A , HSU276 HSU276A HSC88 HSC226 HSC276 HSC276A HSC278 HSD88 NEW HSD276A NEW HSD278 HSM88AS HSM88ASR HSM88WA , No. HRU0103A/HRC0103A HRC0203B HRU0302A HSC88 HSU83 HSU88 HSU119/HSC119 HSU227 HSU276/HSC276 HSU276A
Hitachi Semiconductor
Original
marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 marking 62z SOT23 HVD141/142 HVD141 HVD142 HZM24N HZM10N HZM16N

74ls111

Abstract: 2SA872 spice HSB0104YP HSB226S HSB226YP HSB276AS HSB276S HSB83YP HSB88AS HSB88WA HSB88WS HSB88YP HSC226 HSC276 HSC276A , tuner_presentation Diodes\Simulation Model Data\HS Series HSC119 HSC276 HSM126S HSM198S HSM2836C HSM2838C HSU119
Hitachi Semiconductor
Original
74ls111 2SA872 spice 74LS122 spice model 74ls221 Spice BC240 hitachi mosfet audio application note 2SB715 2SB738 2SB740 2SB831 2SC1213 2SC1344
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