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HSB276ASTL-E Renesas Electronics Schottky barrier diode 680 from $0.0042 (Dec 2016) Chip1Stop Buy

HSB276AS Datasheet

Part Manufacturer Description PDF Type Ordering
HSB276AS Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer
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5 pages,
26.79 Kb

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HSB276AS Renesas Technology Diode, Schottky Diode, Dual Series, 5V, SOT-323, 3-Pin
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5 pages,
23.69 Kb

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HSB276AS Renesas Technology Silicon Schottky Barrier Diode for Balanced Mixer
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5 pages,
145.5 Kb

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HSB276AS Renesas Technology Silicon Schottky Barrier Diode for Balanced Mixer
ri

7 pages,
73.86 Kb

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HSB276AS TY Semiconductor Silicon Schottky Barrier Diode - SOT-323
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1 pages,
66.75 Kb

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HSB276AS Kexin Silicon Schottky Barrier Diode
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1 pages,
41.05 Kb

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HSB276AS

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-838 ADE-208-838(Z) Rev. 0 Feb. 2000 Features · High forward current, Low capacitance. · HSB276AS which is interconnected in series , and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB276AS , HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse , HSB276AS Main Characteristic -2 -1 10 -2 Reverse current I R (A) Forward current IF (A ... Hitachi Semiconductor
Original
datasheet

5 pages,
26.79 Kb

HSB276AS HITACHI DIODE ADE-208-838 TEXT
datasheet frame
Abstract: products contained therein. HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-838 ADE-208-838(Z) Rev. 0 Feb. 2000 Features · High forward current, Low capacitance. · HSB276AS which is , Package Code HSB276AS E8 CMPAK Pin Arrangement 3 2 (Top View) 1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Symbol , .0, Feb. 2000, page 2 of 5 HSB276AS Main Characteristic -2 -1 10 -2 Reverse current I R ... Hitachi Semiconductor
Original
datasheet

7 pages,
73.86 Kb

HSB276AS TEXT
datasheet frame
Abstract: HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-838 ADE-208-838(Z) Rev. 0 Feb. 2000 Features · High forward current, Low capacitance. · HSB276AS which is interconnected in series , and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB276AS , HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse , 1. Failure criterion ; IR 100uA at V R =0.5 V 2. Per one device HSB276AS Main Characteristic ... Hitachi Semiconductor
Original
datasheet

5 pages,
23.69 Kb

HSB276AS Hitachi DSA0047 ADE-208-838 TEXT
datasheet frame
Abstract: HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0594-0100 REJ03G0594-0100 (Previous: ADE-208-838 ADE-208-838) Rev.1.00 Apr 06, 2005 Features • High forward current, Low capacitance. • HSB276AS which is , Package Name HSB276AS E8 CMPAK Pin Arrangement 3 2 1 (Top View) Rev.1.00 Apr 06, 2005 , ) PTSP0003ZB-A PTSP0003ZB-A (CMPAK) HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse , ‰¥ 100 ÂuA at VR = 0.5 V Rev.1.00 Apr 06, 2005 page 2 of 4 Test Condition HSB276AS Main ... Renesas Technology
Original
datasheet

7 pages,
159.92 Kb

HSB276AS REJ03G0594-0100 ADE-208-838 TEXT
datasheet frame
Abstract: HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0594-0100 REJ03G0594-0100 (Previous: ADE-208-838 ADE-208-838) Rev.1.00 Apr 06, 2005 Features · High forward current, Low capacitance. · HSB276AS which is , Package Name HSB276AS E8 CMPAK Pin Arrangement 3 2 1 (Top View) Rev.1.00 Apr 06, 2005 , ) PTSP0003ZB-A PTSP0003ZB-A (CMPAK) HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse , Rev.1.00 Apr 06, 2005 page 2 of 4 Test Condition HSB276AS Main Characteristic 10­2 10­2 ... Renesas Technology
Original
datasheet

5 pages,
145.5 Kb

HSB276AS REJ03G0594-0100 ADE-208-838 TEXT
datasheet frame
Abstract: HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0594-0100 REJ03G0594-0100 (Previous: ADE-208-838 ADE-208-838) Rev.1.00 Apr 06, 2005 Features · High forward current, Low capacitance. · HSB276AS which is , density surface mounting and high speed assembly. Ordering Information Type No. HSB276AS Laser Mark E8 , . Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00 Apr 06, 2005 page 1 of 4 HSB276AS , device 2. Failure criterion ; IR 100 uA at VR = 0.5 V Rev.1.00 Apr 06, 2005 page 2 of 4 HSB276AS ... Renesas Technology
Original
datasheet

7 pages,
161.44 Kb

HSB276AS REJ03G0594-0100 ADE-208-838 TEXT
datasheet frame
Abstract: . HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0594-0100 REJ03G0594-0100 (Previous: ADE-208-838 ADE-208-838) Rev.1.00 Apr 06, 2005 Features · High forward current, Low capacitance. · HSB276AS which is interconnected , Package Name HSB276AS E8 CMPAK Pin Arrangement 3 2 1 (Top View) Rev.1.00 Apr 06, 2005 , ) PTSP0003ZB-A PTSP0003ZB-A (CMPAK) HSB276AS Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse , Rev.1.00 Apr 06, 2005 page 2 of 4 Test Condition HSB276AS Main Characteristic 10­2 10­2 ... Renesas Technology
Original
datasheet

7 pages,
161.51 Kb

HSB276AS TEXT
datasheet frame
Abstract: Diodes SMD Type Silicon Schottky Barrier Diode HSB276AS Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VRRM 5 V R e v e rs e v o lta g e VR 3 V A v e ra g e re c tifie d c u rre n t IO 30 ... Kexin
Original
datasheet

1 pages,
41.02 Kb

HSB276AS smd e8 marking e8 diode E8 package marking diode marking e8 TEXT
datasheet frame
Abstract: Product specification HSB276AS Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R e p e titiv e p e a k re v e rs e v o lta g e V a lu e U n it VRRM 5 V R e v e rs e v o lta g e VR 3 V A v e ra g e re c ... TY Semiconductor
Original
datasheet

1 pages,
66.75 Kb

HSB276AS TEXT
datasheet frame
Abstract: for PDC Block For RF power control RF discrete For VCO Product HSB276AS, HSD278 HSD278, HSD88 HSD88, etc , Lineup of Diodes for GSM Block For RF power control RF discrete For VCO Product HSB276AS , HSB276AS HSB278S HSB278S HSB285S HSB285S CMPAK-4 HSB226YP HSB226YP HSB88YP HSB88YP Figure 3.7 Schottky Barrier Diode REJ27G0027 REJ27G0027 , SFP (1406) UFP (1608) URP (2512) CMPAK (SC-70 SC-70) HSD276A HSD276A HSC276A HSC276A HSU276A HSU276A HSB276AS ... Renesas Electronics
Original
datasheet

18 pages,
198.19 Kb

HVL388C HVL385C HVL355C HSU285 hsl226 HS276A HS226 HIGH POWER ANTENNA SWITCH PIN DIODE HVL399C HVL400C RKV605KP RKV604KP RKV603KP RKV602KP RKV601KP RKV600KP MMIC MAR- HVU365 GSM repeater circuit at 400 Ample Communications TEXT
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