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HOA1882 INFRA-25 HOA1882-011 HOA1882-013 SEP8506/8706 SDP8406 SDP8106 - Datasheet Archive
HOA1882 Transmissive Sensor FEATURES · Choice of phototransistor or photodarlington output · Compact package size
17 September 1997 HOA1882 HOA1882 Transmissive Sensor FEATURES · Choice of phototransistor or photodarlington output · Compact package size · Dust protective housing · 0.060 in.(1.52 mm)dia. detector aperture · 0.200 in.(5.08 mm) slot width INFRA-25 INFRA-25.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.010(0.25) 2 plc decimals ±0.020(0.51) OPTICALC L .270(6.86) .250(6.36) .200(5.08) .125(3.18) .020(0.51) SQ. ~ ~ + S .200(5.08) C E .510(12.95) .400(10.16) K A ~ ~ + E DESCRIPTION The HOA1882 HOA1882 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1882-011 HOA1882-011, -012) or photodarlington (HOA1882-013 HOA1882-013) encased in a black IR transmissive thermoplastic housing. Detector switching takes place whenever an opaque object passes through the slot between emitter and detector. The HOA1882 HOA1882 series employs an IR transmissive housing which features smooth optical faces without external aperture openings; this feature is desirable when aperture blockage from airborne contaminants is a possibility. The HOA1882 HOA1882 series employs plastic molded components. For additional component information see SEP8506/8706 SEP8506/8706, SDP8406 SDP8406, and SDP8106 SDP8106. .150(3.81) Housing material is IR transmissive polysulfone. Housings are soluble in chlorinated hydrocarbons and ketones. Recommended cleaning agents are methanol and isopropanol. .050(1.27) .050(1.27) .100(2.54) .300(7.62) MIN DIM_053.ds4 © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 HOA1882 HOA1882 Transmissive Sensor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS IR EMITTER DETECTOR COUPLED CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) IR EMITTER Power Dissipation Reverse Voltage Continuous Forward Current DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation SCHEMATIC -40¡C to 85¡C -40¡C to 85¡C 240¡C 100 mW [À] 3V 50 mA TRANS. 30 V 5V 100 mW [À] DARLINGTON 15 V 5V 100 mW [À] Notes 1. Derate linearly at 0.78 mW/¡C above 25¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc. 17 September 1997 HOA1882 HOA1882 Transmissive Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs Load Resistance Pulsed condition TA = 80 °C 60 50 40 30 TA = 25 °C 20 10 TA = -40 °C 100 Photodarlington 10 Phototransistor 1 0 0.8 1.0 1.2 1.4 1.6 1.8 10 2.0 100 Fig. 4 gra_301.cdr Normalized collector current Dark Current vs Temperature 1000 10000 Load resistance - Ohms Forward voltage - V Fig. 3 gra_096.ds4 1000 100 90 80 70 Response time - µs Forward current - mA gra_092.ds4 Collector Current vs Ambient Temperature gra_095.ds4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 Free-air temperature - °C All Performance Curves Show Typical Values © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 HOA1882 HOA1882 Transmissive Sensor Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc.