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HN2S02FU Datasheet

Part Manufacturer Description PDF Type
HN2S02FU Toshiba High Speed Switching Application Original
HN2S02FU Toshiba Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: US6; Number of Pins: 6; Features: standard; Internal connection: 3 in 1; V R (V): (max 40) Original

HN2S02FU

Catalog Datasheet MFG & Type PDF Document Tags

HN2S02FU

Abstract: Q2 1 HN2S02FU HN2S02FU : mm 3 SBD : VF (3) = 0.54V () : IR = 5A () (Ta = 25) VRM 45 V VR 40 V IFM 300 mA (10ms) IO 100 mA IFSM 1 A P 200* mW Tj , Q1 Q2 1 2007-10-01 HN2S02FU A9 2 2007-11-01 HN2S02FU 3 2007-11-01 HN2S02FU · · · · "" · · ·
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Original
Q2 1 P200

diode MARKING A9

Abstract: marking A9 HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU Unit: mm High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5µA (max.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V , 2004-03-01 HN2S02FU Pin Assignment (Top View) Marking A9 2 2004-03-01 HN2S02FU
Toshiba
Original
diode MARKING A9 marking A9

marking A9

Abstract: HN2S02FU HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU Unit: mm High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5A (max.) Absolute Maximum Ratings (Ta = 25 , 2007-11-01 HN2S02FU Pin Assignment (Top View) Marking A9 2 2007-11-01 HN2S02FU , applicable laws and regulations. 3 2007-11-01 HN2S02FU 4 2007-11-01 Toshiba
Toshiba
Original
Abstract: HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU Unit: mm High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max.) Absolute Maximum Ratings (Ta = 25 , 2000-01 1 2014-03-01 HN2S02FU Pin Assignment (Top View) Marking A9 2 2014-03-01 HN2S02FU RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original

MARKING A9

Abstract: HN2S02FU HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU Unit: mm High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5A (max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak , 2007-11-01 HN2S02FU Pin Assignment (Top View) Marking A9 2 2007-11-01 HN2S02FU
Toshiba
Original
Abstract: HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU Unit: mm High Speed Switching Application HN2S02FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25Â , CT VR = 0, f = 1MHz 1 V 0.60 5 18 A pF 2007-11-01 HN2S02FU Pin Assignment (Top View) Marking A9 2 2007-11-01 HN2S02FU RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Toshiba
Original

induction cooker circuit diagram

Abstract: TC7600FNG ) HN2S02FU (US6) Indoor Lighting LCD Backlights and Status Lamps LEDs 6-pin (6 in 1) TL19W01 , Barrier Diodes 1SS401/1SS318 (USM) 3-pin (1 in 1)/(2 in 1) 3-pin (1 in 1)/(2 in 1) HN2S02FU , ) HN2S02FU (US6) Indicator TLxx1034 Series LEDs ­ 13 ­ 6-pin (6 in 1) Available in small, thin , 1) 3-pin (1 in 1)/(2 in 1) HN2S02FU (US6) Indicator ­ 14 ­ 6-pin (6 in 1) TLxx1034 , Barrier Diodes 1SS401/1SS318 (USM) HN2S02FU (US6) LCD backlight Operating status display TL
Toshiba
Original
induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG mosfet induction heater SCE0013D

mg75n2ys40

Abstract: 2N3055 TOSHIBA HN2S02FU 545 DF8A6.8FK 497 HN1D04FU 523 HN2S02JE 547 HN1D01F 499 HN2D01F , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , × 3 0.5 100 HN2S02FU 200 40 * 300 * 100 5 40 0.6 100 18 0 , 5 10 0.50 HN2S02FU trr (ns) 40 0.30 20 CT (pF) 100 5 40 0.6
Toshiba
Original
mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 050106DAA1 S2540 TIP29B YTF230 S2543 TIP29C

DF2S6.8UFS

Abstract: SCJ0004N VF/IR HN2S02JE (HN2S07FE) 100 HN2S02FU 100 100 100
Toshiba
Original
SCJ0004N CRG02 CRG07 CRG03 CMG07 CMG02 DF2S6.8UFS JDV2S71E 015AZ3.3 1ss421 TPC6K01 HMG01

CRG09

Abstract: CRH02 80 100 0.56 0.7 100 HN2S02JE HN2S02FU · ( ) · · RoHS 18
Toshiba
Original
SCJ0004O CRG09 CRG01 CRH02 DF2S3.6SC 1SS416CT CRS13 CMG05 CRG04 CRG05

CMZB220

Abstract: CMS17 HN2S02JE HN2S02FU · ( ) · · RoHS 18 2011/1 SCJ0004R VR IF (mA
Toshiba
Original
CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CMG06 CMG08 CMG03 AEC-Q101 CMC02 CMF03

smd diode Lz zener

Abstract: CRS20I30B IR 1000 HN2S02JE HN2S02FU 100 Standard, Independent diodes Standard, 100
Toshiba
Original
SCE0004L smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A CMF05 CRF03 CMF02

TPCA*8030

Abstract: lm2804 0.38 0.45 300 (HN2S06FE) (HN2S07FE) HN2S02FU 1SS293 HN2S04FU * Low VF High
Toshiba
Original
TPCA*8030 lm2804 TPCA*8036 Sj 88a diode 2SK2033 TPCA8028 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU

2fu smd transistor

Abstract: 2FK transistor ) HN2S02FU HN2S04FU * Low VF High current 20 500 0.50 0.55 500 High current, Single
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Original
2fu smd transistor 2FK transistor 3FV 60 43 02CZ2.0 1SV101 1SV283B U10LC48 CMF01 5JUZ47 5GUZ47 1SS154 1SS271

015AZ15

Abstract: 015DZ4 0.56 0.7 100 High current, Single HN2S02JE HN2S02FU · The IO ratings enclosed in
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Original
015AZ15 015DZ4 CRS06 general purpose zener diode 256 Variable Capacitance Diodes bidirectional zener diode CRF02 CMF04 JDH2S03S 1SS295 1SS315 JDH2S01FS

LT 543 common cathode

Abstract: CMG03 for information about RoHS compliance before you purchase any components. 20 HN2S02FU The
Toshiba
Original
LT 543 common cathode DF2S5.6SC DF3S6.8ECT HEDS 5300 toshiba semiconductor catalog 2sc 5296 2010/9SCE0004K

CMG03

Abstract: DF2S6.8S 150 50 0.63 1.0 100 1SS388 45 1SS357 1SS322 1SS383 HN2S02FU 1SS294 1SS319 40 300 100 0.54 , 1SS392 1SS393 1SS396 HN2S02FU HN2S02JU 1 0.7 Measuring instruments Low-voltage operetion
Toshiba
Original
DF2S6.8S toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG 1SS391 DSR520CT DSF05S30 SCE0004I

lm2804

Abstract: marking 513 SOD-323 HN2S01F 1SS367 15 200 100 HN2S02FU Features HN2D01F ­ 1SS357 45 300
Toshiba
Original
marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint sot23 2fv 5252 F solar TAH8N401K BCE0030C S-167 BCE0030D
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