NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| HN2D01F | Toshiba | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
2 pages, |
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| HN2D01F | Toshiba | DIODE |
2 pages, |
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| HN2D01F | Toshiba | Diode, Ultra High Speed Switching Application |
4 pages, |
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| HN2D01FU | N/A | The Diode Data Book with Package Outlines 1993 |
2 pages, |
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| HN2D01FU | Toshiba | DIODE |
2 pages, |
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| HN2D01FU | Toshiba | Diode, Ultra High Speed Switching Application |
3 pages, |
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| HN2D01FU | Toshiba | Ultra High Speed Silicon Epitaxial Planar Type Diode |
2 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HN2D01F HN2D01F : mm 3 : VF (3) = 0.98V () : trr = 1.6ns () : CT = 0.5pF () (Ta = 25°C) VRM 85 V VR 80 V IFM 240 * mA IO 80 * mA IFSM 1* A , 1 ( 1) V A 2007-11-01 HN2D01F (TOP VIEW) 2 2007-11-01 HN2D01F 1. (trr) 3 2007-11-01 HN2D01F · · · · "" ... | Original |
4 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5uF , Unit V uA 2001-06-05 HN2D01F Pin Assignment (Top View) Marking 2 2001-06-05 HN2D01F Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2001-06-05 HN2D01F RESTRICTIONS ... | Original |
4 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm l HN2D01F is composed of 3 independent diodes. l Low forward voltage : VF (3) = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = , Unit V uA 2001-06-05 HN2D01F Pin Assignment (Top View) Marking 2 2001-06-05 HN2D01F Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2001-06-05 HN2D01F RESTRICTIONS ... | Original |
4 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5F , 2007-11-01 HN2D01F Pin Assignment (Top View) Marking 2 2007-11-01 HN2D01F Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2007-11-01 HN2D01F RESTRICTIONS ON PRODUCT USE ... | Original |
4 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage : Vp (3) = 0.98V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) • Small Total Capacitance : (>r = 0.5pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V , conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN2D01F Fig. 1 ... | OCR Scan |
2 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage : Vp (3) = 0.98V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) • Small Total Capacitance : (>r = 0.5pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 , TOSHIBA Semiconductor Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN2D01F Fig. 1 : REVERSE RECOVERY ... | OCR Scan |
2 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage : Vp (3) = 0.98V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) • Small Total Capacitance : (>r = 0.5pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 , TOSHIBA Semiconductor Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN2D01F Fig. 1 : REVERSE RECOVERY ... | OCR Scan |
2 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5F , Unit V A 2007-11-01 HN2D01F Pin Assignment (Top View) Marking 2 2007-11-01 HN2D01F Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2007-11-01 HN2D01F RESTRICTIONS ON ... | Original |
4 pages, |
HN2D01F HN2D01F abstract |
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| Abstract: [8] D EBB = 200 V ± 20 V 27 k HN2D01F I1 33 k V1 = 6 V I2 2SC2551 2SC2551 ... | Original |
8 pages, |
HN2D01F 1SS184 1SS193 1SS226 1SS272 2SA1015 2sa1015 equivalent 2SC1815 2SC2551 2SC752 1SS181 datasheet abstract |
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| Abstract: 547 HN1D01F HN1D01F 499 HN2D01F 526 HN2S03FE HN2S03FE 549 HN1D01FE HN1D01FE 502 HN2D01FU 529 , 1SS226 1SS226 (HN2D01FU) 1SS193 1SS193 (HN2D02FU HN2D02FU) 1SS196 1SS196 1SS362FV 1SS362FV 1SS387 1SS387 80 100 80 200 HN2D01JE HN2D01JE 1SS352 1SS352 (HN2D01F) 7.0 200 typ. 80 1SS302 1SS302 100 1.6 (80) typ. 80 (1SS362 1SS362 , 80 1.2 100 0.9 0 1.6 B1 1SS226 1SS226 Ã- 2 Ã-2 HN2D01FU 200 80 * 240 , * 100 0.5 80 1.2 100 4.0 0 4 A4 1SS184 1SS184 + + 1SS181 1SS181 HN2D01F 300 ... | Original |
154 pages, |
tbf819 2SC4288A toshiba s2530a S2530A TOSHIBA MG150N2YS40 TOSHIBA 2N3055 2N3055 TOSHIBA 050106DAA1 050106DAA1 abstract |
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| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BAS16SE6327 Buy | Discontinued | HN2D01FU Buy | Toshiba | |
| BAS16U Buy | HN2D01F(TE85L) Buy | Toshiba | High Speed Switching Diodes | |
| BAS16U Buy | HN2D01FU(TE85R) Buy | Toshiba | High Speed Switching Diodes |
| Panasonic Part | Manufacturer | Similar Part | Manufacturer |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| HN2D01F Buy | BAS16U Buy | Infineon Technologies | Switching diode - SM6 - SOT-26 | Diodes |
| HN2D01F Buy | DA6X101K Buy | Panasonic (Matsushita) | Switching diode - SM6 - SOT-26 | Diodes |
| HN2D01F Buy | FC903 Buy | Sanyo Semiconductor | Switching diode - SM6 - SOT-26 | Diodes |
| HN2D01F Buy | IMN10 Buy | Rohm | Switching diode - SM6 - SOT-26 | Diodes |
| HN2D01F Buy | MA6X1210G Buy | Panasonic (Matsushita) | Switching diode - SM6 - SOT-26 | Diodes |
| HN2D01FU Buy | BAS16S Buy | Infineon Technologies | Switching diode - US6 - SOT-363 | Diodes |
| HN2D01FU Buy | UMN10N Buy | Rohm | Switching diode - US6 - SOT-363 | Diodes |