NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| HN1C01FE | Toshiba | Transistor Silicon NPN Epitaxial Type (PCT Process) |
3 pages, |
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| HN1C01FEGR | Toshiba | TRANS GP BJT NPN 50V 50A 6(2-2N1G) |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HN1C01FE NPN (PCT) HN1C01FE : mm (6 ) 2 : VCEO = 50V : IC = 150mA () hFE : hFE = 120400 hFE : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 () (Ta = 25°C) (Q1, Q2 ) VCBO 60 V VCEO 50 V VEBO 5 V IC 150 , Q2 Q1 1 2 1 3 2007-11-01 HN1C01FE (Q1, Q2 ) PC*  Ta 150 PC (mW , ) 2007-11-01 HN1C01FE · · · · "" · · · ... | Original |
3 pages, |
HN1C01FE HN1C01FE abstract |
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| Abstract: HN1C01FE NPN (PCT) HN1C01FE : mm (6 ) 2 : VCEO = 50V : IC = 150mA () hFE : hFE = 120400 hFE : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 () (Ta = 25°C) (Q1, Q2 ) VCBO 60 V VCEO 50 V VEBO 5 V IC 150 , Q2 Q1 1 2 1 3 2007-11-01 HN1C01FE (Q1, Q2 ) PC*  Ta 150 PC (mW , ) 2007-11-01 HN1C01FE · · · · "" · · · ... | Original |
3 pages, |
HN1C01FE HN1C01FE abstract |
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| Abstract: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = , hFE Rank 2 1 3 1 4 Q2 Q1 C1 1 5 2 3 2007-11-01 HN1C01FE (Q1 , 2007-11-01 HN1C01FE RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN GENERAL · The information contained ... | Original |
3 pages, |
HN1C01FE HN1C01FE abstract |
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| Abstract: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = , 2 3 2004-06-17 HN1C01FE (Q1,Q2 Common) COLLECTOR POWER DISSIPATION PC (mW) PC*  , 150 175 (°C) *:Total Rating 2 2004-06-17 HN1C01FE RESTRICTIONS ON PRODUCT USE ... | Original |
3 pages, |
HN1C01FE HN1C01FE abstract |
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| Abstract: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = , hFE Rank 2 1 3 1 4 Q2 Q1 C1 1 5 2 3 2007-11-01 HN1C01FE (Q1 , 2007-11-01 HN1C01FE RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and ... | Original |
3 pages, |
HN1C01FE HN1C01FE abstract |
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| Abstract: s2530a 3SK35 tbf819 MG8N6ES42 MG15G1AL2 MG30G1BL2 mg75j2ys40 2sk270a mg150n2ys40 2SK150A MG15N6ES42 mg75n2ys40 HN1C01FE 475 HN4C06J HN4C06J 615 2SC3265 2SC3265 195 2SK170 2SK170 331 HN1C01FU HN1C01FU 477 HN4C08J HN4C08J 618 , IC (mA) IB (mA) Min (Typ.) VCE (V) IC (mA) HN1C01FE NPN 2 50 , : hFE HN1C01FE HN2C01FE HN2C01FE HN1A01FE HN1A01FE HN2A01FE HN2A01FE HN1B04FE HN1B04FE HN3C67FE HN3C67FE HN1C05FE HN1C05FE 6 6 ... | Original |
116 pages, |
2sd647 ESM 740 TOSHIBA 2N3055 2N3773 TOSHIBA 2N3055 TOSHIBA TOSHIBA MG15G1AL3 toshiba s2530a TOSHIBA MG150N2YS40 050106DAA1 050106DAA1 abstract |
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| Abstract: Internal Connections Product No. PNP x 2 HN2A01FE HN2A01FE NPN x 2 HN2C01FE HN2C01FE HN1C01FE , type HN1B01F HN1B01F 2SA1586 2SA1586 2SC4116 2SC4116 Q2 Ð" Q1 HN1C01FE HN1B04FU HN1B04FU Ð" General-purpose ... | Original |
16 pages, |
8FK transistor 2sk880 2SK3320 2SK2145 1SS382 TE85L F HN1K02FU HN2A01FE HN2D01FU RN4907 RN4607 RN2904 RN1901 pnp array HN7G01FU datasheet abstract |
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| Abstract: Motorola MMBTA64 MMBTA64 DTC124XS DTC124XS Rohm KRC108M KRC108M EMG6 Rohm KRC664E KRC664E HN1C01FE Toshiba ... | Original |
7 pages, |
KTC2028 KTD2499 BA1F4M 2SD1131 BC550 MOTOROLA 2SD972 KTC4369 2SC2320 BC238 MOTOROLA 2SA1019 2N3906 MOTOROLA 2SC2320 datasheet 2SD1960 2sc1983 2N2222/A 2N2369/A 2N2222/A abstract |
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| Abstract: TA75358 TC7ST32F TTK101MFV TC7ST08F lm2804 2009-9 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 . 4 2 MOSFET. 10 2.1 MOSFETSSM. 10 2.2 . ... | Original |
66 pages, |
2sc 834 2SK3582MFV ssm3k131 TCR5SB15 SOT-24 SSM3K02T TC7SZ17FU TPC8A03 IC sj 4558 TPC8037 TC4W53FU Sj 88a diode 2SK2033 TPCA*8036 datasheet abstract |
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| Abstract: lm2804 HN1C01FE HN1A01FE HN1A01FE 2SC4207 2SC4207 2SA1618 2SA1618 * HN4A56JU HN4A56JU * HN2C01FE HN2C01FE HN2A01FE HN2A01FE HN1B04FE HN1B04FE NPN PNP SM6 ... | Original |
52 pages, |
HIGH POWER MOSFET TOSHIBA SSM3J16FU Audio Power Amplifier MOSFET TOSHIBA ic 4558 audio diagram 2SC5720 TC7S04FU 5-pin sot 353 Voltage Regulators "MARKING TE" US6 lm2804 data sheet TC7W14FU TE12L RN1608 2sc1815 datasheet abstract |
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| Abstract: TC7W04 TC4S66 TBC856 TAH8N401K tc7wh125 ) NPN PNP PNP + NPN NPN PNP US6 (SOT-363, SC-88 SC-88) PNP + NPN HN1C01FE HN1A01FE HN1A01FE 50 ... | Original |
64 pages, |
SSM3K16TE SSM3K02T 02DZ SSM3J16FU SOD-323 land pattern sot-24 led SOD523 land pattern HN4C06J SOT-24 e 420 dual jfet 2SK3376TT 5252 solar cell chip 5252 F 0.9V 1.5V led driver 5-pin sot 353 Voltage Regulators datasheet abstract |
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| KEC Part | Industry Part | Manufacturer | Category | Description |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| HN1C01FE Buy | 2N2904E Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification 2 in 1 - ES6 - SOT-563 | Transistors |
| HN1C01FE Buy | DMC90401 Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification 2 in 1 - ES6 - SOT-563 | Transistors |
| HN1C01FE Buy | KTC801E Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification 2 in 1 - ES6 - SOT-563 | Transistors |
| HN1C01FE Buy | UP04501G Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification 2 in 1 - ES6 - SOT-563 | Transistors |
| HN1C01FE Buy | UP4501G Buy | Panasonic (Matsushita) | Transistor for Low-Frequency Small-Signal Amplification 2 in 1 - ES6 - SOT-563 | Transistors |