HMC714LP5 714LP5E HMC714LP5E ETC1-1-13 HMC614LPE 256QAM 64DPCH 300MHZ 2000MHZ - Datasheet Archive

 

v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features · Crest Factor (Peak-to-Average Power Ratio) Measurement ·

 

HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Features · Crest Factor (Peak-to-Average Power Ratio) Measurement · Envelope-to-Average Power Ratio Measurement · Dual channel and channel difference output ports · Excellent Channel Matching and Channel Isolation 12 · RF Signal Wave Shape & Crest Factor Independent · Supports Controller Mode[1] · ± 1 dB Detection Accuracy to 3.9 GHz · Input Dynamic Range -55 dBm to +15 dBm · +5V Operation from -40° C to +85° C · Excellent Temperature Stability · Integrated Temperature Sensor · Power-Down Mode · 32 Lead 5x5mm SMT Package: 25mm2 POWER DETECTORS - SMT Typical Applications · Log -> Root - Mean - Square (RMS) Conversion · Received Signal Strength Indication (RSSI) · Transmitter Power Control · Dual Channel wireless infrastructure radio · Transmitter Signal Strength Indication (TSSI) · Receiver Automatic Gain Control · Antenna VSWR Monitor Functional Diagram [1] For more information regarding controller mode operation, please contact your Hittite sales representative or email sales@hittite.com 12 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz General Description The HMC714LP5E HMC714LP5E is a dual-channel RMS power detector designed for high accuracy RF power signal measurement and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having RMS values from -55 dBm to +15 dBm referenced to 50 and large crest factors with no accuracy degradation. The HMC714LP5E HMC714LP5E also provides "channel difference" output ports via pins OUTP and OUTN, permitting measurements of the input signal power ratio between the two power detection channels. These outputs may be used in single-ended or differential configurations. An input voltage applied to the VLVL input pin is used to set the common mode voltage reference level for OUTP and OUTN. On the Hittite evaluation board, the VLVL pin is shorted to VREF2 output to provide a nominal bias voltage of 2.5V; but any external bias voltage may be used to set VLVL. The HMC714LP5E HMC714LP5E also features INSA and INSB pins which provide a measurement of instantaneous signal power normalized to average power level in each channel. Reading both the INSA/INSB and RMSA/RMSB output voltage signals provides a very informative picture of the RF input signal; providing peak power, average power, peak-toaverage power, and RF wave shape. The device also includes a buffered PTAT temperature sensor output with a temperature scaling factor of 2.2 mV/°C yielding a typical output voltage of 600 mV at 0°C. The HMC714LP5E HMC714LP5E operates over the -40 to +85C temperature range, and is available in a compact, 32-lead 4x4 mm leadless QFN package Electrical Specifi cations I, TA = +25°C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 F Parameter Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Units Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz Differential Input Configuration, Channel A 68 68 69 72 71 66 47 42 dB Differential Input Configuration, Channel B 68 69 69 71 71 64 45 41 Input Signal Frequency 100 900 1800 ± 300 2200 ± 300 3600 ± 300 MHz Single-Ended Input Configuration, Channel A 70 62 71 69 61 dB Single-Ended Input Configuration, Channel B 70 62 71 69 61 dB Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz Input A to Input B Isolation (Baluns Macom ETC1-1-13 ETC1-1-13 at both channels) 72 70 69 53 51 56 48 47 dB Input A to RMS B Isolation (PIN B = -45 dBm, RMS B = RMSBINB ±1 dB) 60+ 56 46 44 47 dB Input B to RMSA Isolation (PINA = -45 dBm, RMSA = RMSAINA ±1 dB) 60+ 58 46 44 48 12 POWER DETECTORS - SMT Each RMS detection channel is fully specified for operation up to 3.9 GHz, over a wide dynamic range of 70 dB. The HMC714LP5E HMC714LP5E operates from a single +5V supply and provides two linear-in-dB detection outputs at the RMSA and RMSB pins with scaled slopes of 37 mV/dB. The RMSA and RMSB channel outputs provide RMS detection performance in terms of dynamic range, logarithmic linearity and temperature stability similar to Hittite's HMC614LPE HMC614LPE RMS Detector. The RMSA and RMSB outputs provide a read of average input signal power, or true-RMS power. Frequency detection up to 5.8 GHz is possible, with excellent channel matching of less than 0.5 dB (for the single-ended configuration), over a wide range of input frequencies and with low temperature drift. dB Dynamic Range (± 1 dB measurement error) dB Channel Isolations Input A to RMS B Isolation (PIN B = -40 dBm, RMS B = RMSBINB ±1 dB) 47 39 dB Input B to RMSA Isolation (PINA=-40 dBm, RMSA=RMSAINA ±1 dB) 43 28 dB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 115 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Electrical Specifi cations II, TA = +25°C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 F Parameter Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Units Deviation vs Temperature: (Over full temperature range -40°C to 85°C. Deviation is measured from reference, which is CW input at 25°C Differential Input Interface with 1:1 Balun Transformer (over full input frequency range) ± 0.6 dB Wideband Single-Ended Input Interface suitable for input signal frequencies below 1000 MHz ± 0.5 dB Tuned Single-Ended Input Interface Suitable for input signal frequencies above 1000 MHz ± 0.6 dB Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power, VTGT=2V) Input Signal Frequency POWER DETECTORS - SMT 12 100 500 900 1900 2200 3000 3500 3900 MHz 256QAM 256QAM (2 Mbps, 8dB Crest Factor) -0.13 -0.1 -0.1 -0.1 -0.1 -0.1 -0.3 -0.3 mV/dB WCDMA Single Carrier (Test Model 1 with 64DPCH 64DPCH) -0.3 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 dBm WCDMA 2 Carrier (Test Model 1 with 64DPCH 64DPCH) -0.5 -0.5 -0.4 -0.4 -0.3 -0.4 -0.4 -0.4 dBm Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power, VTGT=1V) Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz 256QAM 256QAM (2 Mbps, 8dB Crest Factor) 0.1 0.1 0.1 0.1 0.1 0.1 -0.2 -0.1 dB WCDMA Single Carrier (Test Model 1 with 64DPCH 64DPCH) -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 dB WCDMA 2 Carrier (Test Model 1 with 64DPCH 64DPCH) -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 dB Differential Input Configuration Logarithmic Slope and Intercept Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz Logarithmic Slope 37.3 37.1 37 36 36 36.1 36.2 38.2 mV/dB Logarithmic Intercept -70 -70 -69.5 -72 -71.5 -68.5 -68.5 -64 dBm Max. Input Power at +-1dB Error 12 14 13 15 15 13 -5 -8 dBm Min. Input Power at +-1dB Error -56 -55 -56 -56 -56 -52 -52 -49 dBm Single Ended Input Configuration Logarithmic Slope and Intercept Input Signal Frequency 100 900 1800 ± 300 2200 ± 300 3600 ± 300 MHz Logarithmic Slope 38.2 37.9 36.6 35.4 36.8 mV/dB Logarithmic Intercept -67 -67.5 -67 -67 -64.5 dBm Max. Input Power at +-1dB Error 14 6 15 15 12 dBm Min. Input Power at +-1dB Error -56 -56 -56 -54 -49 dBm iPAR Feature: INS[A,B] outputs follow Amplitude Modulated Envelope Power, scaled to Average (RMS) Signal Power INS[A,B] and IREF[A,B] are measured with Rext = 3.9 k and 50 k active scope probe IREF[A,B] Output Voltage 1.6 INS[A,B] Output Voltage, with CW Input Signal (EAR = 1: Reference Condition)[1] 1.6 V V INS[A,B] Scaling Factor (SF) with VTGT = 2V 190 mV mV INS[A,B] Scaling Factor (SF) with VTGT = 1V 95 INS[A,B] Output: Variation over Temperature (-40C to 85C) ±2 % INS[A,B] Output: 3 dB Video BW 35 MHz [1] EAR: Amplitude Modulated Envelope Signal Power-to-Average (RMS) Signal Power Ratio; EAR = 1 for CW signals 12 - 116 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMS [A,B] vs. Pin with Different Modulations @ 1900 MHz, VTGT= 1V RMS [A,B] Error vs. Pin with Different Modulations @ 1900 MHz, VTGT= 1V 4 2 3.5 CW WCDMA 1 Carrier WCDMA 2 Carrier 256QAM 256QAM 1.5 Ideal CW WCDMA1 Carrier 2.5 WCDMA 2 Carrier 256QAM 256QAM 1 ERROR (dB) 2 1.5 0.5 0 -0.5 1 -1 0.5 -1.5 0 -60 -50 -40 -30 -20 -10 0 -2 -60 10 -50 -40 -20 -10 0 10 Logarithmic Error wrt to CW Response @ 1900 MHz for Different Modulation Schemes, VTGT= 2V Logarithmic Error wrt to CW Response @ 1900 MHz for Different Modulation Schemes, VTGT= 1V 1.2 2 1 WCDMA 1 Carrier WCDMA 2 Carrier 256QAM 256QAM WCDMA 1 Carrier WCDMA 2 Carrier 256QAM 256QAM 1.5 ERROR (dB) 0.8 0.6 1 0.4 0.5 0.2 0 -60 -50 -40 -30 -20 12 INPUT POWER (dBm) INPUT POWER (dBm) ERROR (dB) -30 -10 0 0 -60 10 -50 INPUT POWER (dBm) -40 -30 -20 -10 0 10 INPUT POWER (dBm) Table 3: Electrical Specifi cations III , HMC714LP5E HMC714LP5E Differential Confi guration, TA=25°C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF, unless otherwise noted Parameter Conditions Min. Typ. Max. POWER DETECTORS - SMT RMSA (RMSB) (V) 3 Units Differential Input Configuration Input Network Return Loss Input Resistance between INPA and INNA Input Resistance between INPB and INN B Input Voltage Range up to 2.5 GHz[1] > 10 dB Between pins 2 and 3 220 Ohms Between pins 6 and 7 220 Ohms VDIFFINA = VINPA - VINNA and VDIFFINB = VINPB -VINNB 2.25 V RMSOUT [A,B] Output Output Voltage Range RL = 1kOhm, CL = 4.7pF [2] 0.4 to 3.2 V Openloop Output Voltage Range RMS-VSET disconnected for control applications 0.4 to Vcc-1 V Source/Sink Current Compliance Measured with 900 MHz input RF signal at -30 dBm power 10/1.1 Output Slew Rate (rise/fall) With CINT=0, Cofs=0 110/6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA 6 10 V/sec 12 - 117 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Table 3: Electrical Specifi cations III , HMC714LP5E HMC714LP5E Differential Confi guration, TA=25°C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF, unless otherwise noted Parameter Conditions Min. Typ. Max. Units VSET [A,B] Outputs For control applications with nominal slope/intercept settings Input Voltage Range [2] 0.4 to 3.2 15 Input Resistance V kOhm OUTP and OUTN Outputs Output Voltage Range 1 to 3.9 V Openloop Output Voltage Range 12 RL=1kOhm, CL=4.7pF [2] OUTP-FBKA and OUTN-FBKB disconnected for control applications 0.1 to Vcc-0.9 V Source/Sink Current Compliance Measured with 900 MHz input RF signal at -30 dBm power 20/4.2 mA VLVL , Common Mode Reference Level for OUT[P,N] POWER DETECTORS - SMT Voltage Range OUT[P,N]=FBK[A,B] 0 Input Resistance 5 6 VREF2 , Voltage Reference Output Output Voltage 2.43 V Temperature Sensitivity 0.15 mV/°C 5.5 / 2.6 mA Source/Sink Current Compliance VREF3 , Voltage Reference Output Output Voltage 2.94 V Temperature Sensitivity 0.15 mV/°C 0.15 / 0.7 mA Source/Sink Current Compliance TEMP, Temperature Sensor Output Output Voltage measured at 0°C 0.6 mV/°C 1.7 / 0.5 Source/Sink Current Compliance V 2.2 Temperature Sensitivity mA ENX Logic Input, Power Down Control Input High Voltage 0.7*VCC V Input Low Voltage 0.3*VCC Input Capacitance 0.5 V pF Power Supply Supply Voltage Supply Current with no input power Supply Current with 0dBm at one channel Supply Current with 0dBm at both channels Standby Mode Supply Current 4.5 115 mA nominal at -40°C; 153mA nominal at 85°C 128 mA nominal at -40°C; 166mA nominal at 85°C 5 5.5 V 138 mA 150 mA 164 mA 6.5 mA [1] Performance of differential input configuration is limited by the balun. Baluns used are M/A-COM ETC1-1-13 ETC1-1-13 specified 4.5 MHz to 3000 MHz [2] For nominal slope/intercept setting, please see application section to change this range 12 - 118 V kOhm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA & Error vs. Pin @ 100 MHz [1] RMSB & Error vs. Pin @ 100 MHz [1] 4 4 2 -1 -2 1 ERR +25C ERR +85C ERR - 40C -30 -20 -10 -1 -2 ERR +25C ERR +85C ERR - 40C 0 -60 -50 -40 4 RMSB (V) -1 -2 1 ERR +25C ERR +85C ERR - 40C 0 0 2 -1 -60 -4 -50 -40 -1 -2 1 ERR +25C ERR +85C ERR - 40C -4 10 3 Ideal RMSB +25C RMSB +85C RMSB - 40C 2 1 0 2 -1 -2 1 ERR +25C ERR +85C ERR - 40C -3 0 0 RMSB (V) 0 INPUT POWER (dBm) 10 -3 -4 0 -60 ERROR (dB) 1 -10 0 4 3 ERROR (dB) RMSA (V) 2 2 -20 -10 4 3 Ideal RMSA +25C RMSA +85C RMSA - 40C -30 -20 RMSB & Error vs. Pin @ 900 MHz [1] 4 -40 -30 INPUT POWER (dBm) 4 -50 -3 0 10 RMSA & Error vs. Pin @ 900 MHz [1] -60 -2 ERR +25C ERR +85C ERR - 40C INPUT POWER (dBm) 3 2 1 -3 0 3 Ideal RMSB +25C RMSB +85C RMSB - 40C 1 -4 -10 10 ERROR (dB) 0 2 -20 0 4 3 ERROR (dB) RMSA (V) 2 1 -30 -10 4 3 Ideal RMSA +25C RMSA +85C RMSA - 40C -40 -20 RMSB & Error vs. Pin @ 500 MHz [1] 4 -50 -30 INPUT POWER (dBm) RMSA & Error vs. Pin @ 500 MHz [1] -60 12 -4 0 10 INPUT POWER (dBm) 3 -3 POWER DETECTORS - SMT -40 0 1 -4 -50 1 2 -3 0 -60 RMSB (V) 0 2 ERROR (dB) 1 2 3 Ideal RMSB +25C RMSB +85C RMSB - 40C 3 ERROR (dB) RMSA (V) 3 Ideal RMSA +25C RMSA +85C RMSA - 40C 3 4 4 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) [1] CW Input Waveform For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 119 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA & Error vs. Pin @ 1900 MHz [1] 4 4 -1 RMSB (V) 0 -2 1 ERR +25C ERR +85C ERR - 40C -40 -30 -20 -10 0 0 -1 1 -4 -50 1 2 -60 -4 -50 -40 -2 ERR +25C ERR +85C ERR - 40C 0 -10 0 0 2 -1 -60 -4 -50 -40 -1 -2 1 ERR +25C ERR +85C ERR - 40C RMSB (V) 0 -4 0 10 3 2 1 0 2 -1 -2 1 ERR +25C ERR +85C ERR - 40C -3 -4 0 -60 -50 -40 -30 -20 -10 0 INPUT POWER (dBm) [1] CW Input Waveform 12 - 120 10 Ideal RMSB +25C RMSB +85C RMSB - 40C -3 0 INPUT POWER (dBm) 0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 ERROR (dB) 1 -10 -10 4 3 ERROR (dB) RMSA (V) 2 2 -20 -20 4 3 Ideal RMSA +25C RMSA +85C RMSA - 40C -30 -30 RMSB & Error vs. Pin @ 3000 MHz [1] 4 -40 -3 INPUT POWER (dBm) 4 -50 -2 ERR +25C ERR +85C ERR - 40C 0 10 RMSA & Error vs. Pin @ 3000 MHz [1] -60 2 1 INPUT POWER (dBm) 3 3 Ideal RMSB +25C RMSB +85C RMSB - 40C 1 -4 -20 10 4 3 RMSB (V) 0 -30 0 ERROR (dB) RMSA (V) 2 2 -40 -10 4 ERROR (dB) POWER DETECTORS - SMT Ideal RMSA +25C RMSA +85C RMSA - 40C -50 -20 RMSB & Error vs. Pin @ 2200 MHz [1] 4 4 -60 -30 INPUT POWER (dBm) RMSA & Error vs. Pin @ 2200 MHz [1] 1 -3 0 10 INPUT POWER (dBm) 3 -2 ERR +25C ERR +85C ERR - 40C -3 0 2 ERROR (dB) 1 3 Ideal RMSB +25C RMSB +85C RMSB - 40C 3 ERROR (dB) RMSA (V) 2 2 -60 4 4 3 Ideal RMSA +25C RMSA +85C RMSA - 40C 3 12 RMSB & Error vs. Pin @ 1900 MHz [1] HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA & Error vs. Pin @ 3500 MHz [1] 4 4 2 RMSB (V) -1 -2 1 ERR +25C ERR +85C ERR - 40C -30 -20 -10 -1 -2 ERR +25C ERR +85C ERR - 40C 0 -60 -50 -40 Ideal RMSA +25C RMSA +85C RMSA - 40C RMSB (V) -1 -2 1 ERR +25C ERR +85C ERR - 40C 0 1 0 2 -1 -2 ERR +25C ERR +85C ERR - 40C -60 -4 -50 -40 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C OUT[P,N](V) OUT[P,N](V) 2 2 0 -2 -10 INPUT POWER (dBm) 0 10 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C 1 -4 0 Out P 0 -60 ERROR (dB) 0 -20 10 3 ERROR (dB) 2 -30 0 4 Out P 2 -40 -10 4 Out N 3 -50 -20 OUT [P,N] & Error vs. Pin @ 500 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 4 -60 -30 INPUT POWER (dBm) OUT [P,N] & Error vs. Pin @ 100 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 1 -3 0 10 INPUT POWER (dBm) Out N 2 1 -4 0 3 Ideal RMSB +25C RMSB +85C RMSB - 40C -3 -10 10 ERROR (dB) 0 -20 0 4 3 ERROR (dB) RMSA (V) 2 2 -30 -10 4 3 1 -40 -20 RMSB & Error vs. Pin @ 3900 MHz [1] 4 4 -50 -30 INPUT POWER (dBm) RMSA & Error vs. Pin @ 3900 MHz [1] -60 12 -4 0 10 INPUT POWER (dBm) 3 -3 POWER DETECTORS - SMT -40 0 1 -4 -50 1 2 -3 0 2 ERROR (dB) 0 3 Ideal RMSB +25C RMSB +85C RMSB - 40C 3 ERROR (dB) 1 2 -60 4 4 3 Ideal RMSA +25C RMSA +85C RMSA - 40C 3 RMSA (V) RMSB & Error vs. Pin @ 3500 MHz [1] -2 -4 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) [1] CW Input Waveform For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 121 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz OUT [P,N] & Error vs. Pin @ 900 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 4 Out N Out N Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C 0 -4 -50 -40 -30 -20 -10 0 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C 1 0 10 -50 -40 INPUT POWER (dBm) Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C OUT[P,N](V) OUT[P,N](V) 2 2 0 -2 -20 -10 0 Out P Err +25C Out P Err +85C Out P Err -40C Out N Err +25C Out N Err +85 C Out N Err -40C 1 -4 0 0 10 -50 -40 Out P Err +25C Out P Err +85C Out P Err -40 C Out N Err +25C Out N Err +85C Out N Err -40 C OUT[P,N] (V) OUT[P,N](V) 2 2 0 -2 -10 INPUT POWER (dBm) 0 10 Out P Err +25C Out P Err +85C Out P Err -40 C Out N Err +25C Out N Err +85C Out N Err -40 C 1 -4 0 Out P 0 -60 -50 -40 -30 -20 -10 -2 -4 0 INPUT POWER (dBm) [1] CW Input Waveform 12 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 ERROR (dB) 0 -20 10 3 ERROR (dB) 2 -30 0 4 Out N 2 -40 -10 4 Out P 3 -50 -20 OUT [P,N] & Error vs. Pin @ 3900 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 4 -60 -30 INPUT POWER (dBm) OUT [P,N] & Error vs. Pin @ 3500 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 1 -2 -4 -60 INPUT POWER (dBm) Out N Out P 3 ERROR (dB) 0 -30 10 4 Out P 2 -40 0 4 2 -50 -10 Out N 3 -60 -20 OUT [P,N] & Error vs. Pin @ 3000 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] 4 4 1 -30 INPUT POWER (dBm) OUT [P,N] & Error vs. Pin @ 2200 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] Out N -2 -4 -60 ERROR (dB) POWER DETECTORS - SMT 2 -2 0 -60 OUT[P,N] (V) OUT[P,N](V) 0 2 ERROR (dB) 2 Out P 3 ERROR (dB) 2 1 4 4 Out P 3 12 OUT [P,N] & Error vs. Pin @ 1900 MHz, INPA Power Swept, INPB Fixed Power @ -25 dBm [1] HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 100 MHz [1][2] RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 500 MHz [1][2] 60 60 +25C +85C -40C 20 0 -20 -40 20 0 -20 -40 -45 -35 -25 -15 -5 5 -60 -55 15 -45 -35 Input Power (dBm) 15 +25C +85C -40C 40 RMSA-RMSB (mV) RMSA-RMSB (mV) 5 60 +25C +85C -40C 40 20 0 -20 -40 20 0 -20 -40 -45 -35 -25 -15 -5 5 -60 -55 15 -45 -35 Input Power (dBm) -25 -15 -5 5 15 Input Power (dBm) RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 2200 MHz [1][2] RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3000 MHz [1][2] 60 12 60 +25C +85C -40C +25C +85C -40C 40 RMSA-RMSB (mV) 40 RMSA-RMSB (mV) -5 RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 1900 MHz [1][2] 60 20 0 -20 -40 -60 -55 -15 Input Power (dBm) RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 900 MHz [1][2] -60 -55 -25 POWER DETECTORS - SMT -60 -55 +25C +85C -40C 40 RMSA-RMSB (mV) RMSA-RMSB (mV) 40 20 0 -20 -40 -45 -35 -25 -15 Input Power (dBm) -5 5 15 -60 -55 -45 -35 -25 -15 -5 5 15 Input Power (dBm) [1] CW Input Waveform [2] Differential Input Configuration. Baluns selected for matching performance, mismatch between channels is limited by the input baluns. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 123 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3500 MHz [1][2] RMSA-RMSB, Channel Matching vs. Pin over Temperature @ 3900 MHz [1][2] 80 80 60 +25C +85C -40C 40 RMSA-RMSB (mV) RMSA-RMSB (mV) 60 20 0 -20 40 20 0 -20 -40 -40 -60 12 +25C +85C -40C -60 -80 -55 -45 -35 -25 -15 -5 5 -80 -55 15 -45 -35 0.5GHz 0.9GHz 1.9GHz 2.2GHz 3.0GHz 3.9GHz 5 15 3 0.5GHz 0.9GHz 1.9GHz 2.2GHz 3.0GHz 3.9GHz 5 4 Error (dB) 4 Channel B fixed at -45dBm for f 900MHz Choose L and C elements from the following graph for narrowband tuning of the SE-interface: R31/34 R31/34 = 30, R32/35 R32/35 = 50, C1/6 =1 nF R30/33 R30/33 = 270, Wideband SE-interface: for signal frequencies < 900 MHz R31/34 R31/34 = 0, R32/35 R32/35 = OPEN, R1/R3 = 68, R30/33 R30/33 = Open C2, C5 is 1 nF decoupling caps. For wideband (un-tuned) input interfaces, choose the input decoupling capacitor values by first determining the lowest spectral component the power detector is required to sense, L. Input decoupling capacitor value 1 p × f L × 3.2 farads, where L is in Hertz. Ex. If the power detector needs to sense down to 10 MHz, the decoupling capacitor value should be 1/(*10E6*3.2) = 10 nF A DC bias (Vcc-1.5V) is present on the INP[A,B] and IN[A,B] pins, and should not be overridden. 12 - 144 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RF Input Interface (Continued) Tuning, Single Ended Interface: fc ± 300 MHz 9 8 7 7 6 6 5 5 4 4 3 3 2 2 1 12 0 0 900 1400 1900 2400 2900 3400 3900 FREQUENCY (MHz) RMS Output Interface and Transient Response Output transient response is determined by the integration capacitances CINTA & CINTB and output load conditions. Using larger values of CINT will narrow the operating bandwidth of the integrator, resulting in a longer averaging time-interval and a more filtered output signal; however it will also slow the power detector's transient response. A larger CINT value favors output accuracy over speed. For the fastest possible transient settling times, leave the CINT pins free of any external capacitance. This configuration will operate the integrator at its widest possible bandwidth, resulting in short averaging time-interval and an output signal with little filtering. Most applications will choose to have some external integration capacitance, maintaining a balance between speed and accuracy. Furthermore, error performance over crest factor is degraded when CINT is very small (for CINT < 100 pF). Modulation and deviation results in Electrical Specification Table 2 are provided with CINT = 0.1 uF. Start by selecting CINT using the following expression, and then adjust the value as needed, based on the application's preference for faster transient settling or output accuracy. CINT = 1500 uF/(2* *lam), in Farads, where lam = lowest amplitude-modulation component frequency in Hertz Example: when lam = 10 kHz, CINT = 1500 F/(2*1000) = 24E-9 24E-9 Farads ~ 22 nF POWER DETECTORS - SMT 8 1 TUNING CAPACITANCE (pF) 10 9 TUNING INDUCTANCE (nH) 10 Table: Transient response vs. CINT capacitance: with COFS = 0 CINT RMS Rise - Time over Dynamic Range Pin = 0 dBm Pin = -30 dBm Pin = -10 dBm 0 35 nsec 120 nsec 200 nsec 1.18 usec 100 pF 80 nsec 410 nsec 720 nsec 1.26 usec 1 nF 780 nsec 3.3 usec 5.6 usec 7 usec 10 nF 7.8 usec 32.4 usec 54 usec 66.4 usec RMS Fall - Time Pin = 0 dBm Input signal is 1900 MHz CW-tone switched on and off RMS is loaded with 1k, 4 pF, and VTGT = 2V, For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 145 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz RMS Output Interface and Transient Response (Continued) Transient response can also be slewed by the RMS output if it is excessively loaded: keep load resistance above 375. An optimal load resistance of approximately 500 to 1k will allow the output to move as quickly as it is able. For increased load drive capability, consider a buffer amplifier on the RMS output. Using an integrating amplifier on the RMS output allows for an alternative treatment for faster settling times. An external amplifier optimized for transient settling can also provide additional RMS filtering, when operating HMC714LP5E HMC714LP5E with a lower CINT capacitance value. Rise/Fall Characteristics, CINT = 0 pF 4 3.5 RMSOUT (V) 3 2.5 10 dBm 0 dBm -10 dBm -20 dBm -30 dBm 3.5 10 dBm 0 dBm -10 dBm -20 dBm -30 dBm 3 RMSOUT (V) 12 POWER DETECTORS - SMT Rise/Fall Characteristics, CINT = 10 nF 4 2 1.5 2.5 2 1.5 1 1 0.5 0.5 0 0 0.5 1 1.5 2 2.5 0 3 0 50 100 TIME (usec) 150 200 LOG-Slope and Intercept The HMC714LP5E HMC714LP5E provides for an adjustment of output scale by controlling the fraction of RMSA /RMSB that is fed-back to the setpoint interface at the VSETA /VSETB pins. Log-slope and intercept can be adjusted to "magnify" a specific portion of the input sensing range, and to fully utilize the dynamic range of the RMS output. A log-slope of 36.5 mV/dBm is set by connecting the RMSA /RMSB outputs directly to VSETA /VSETB pins using 0 resistors RFBK A and RFBKB. The log-slope is adjusted by using the appropriate resistors RFBK A , RFBKB, RSHUNTA , RSHUNTB on the RMSA /RMSB and VSETA /VSETB pins. Log-intercept is adjusted by applying a DC voltage to the VSETA /VSETB pins through resistors RSETA and RSETB . Due to the 15 k input resistance at the VSETA /VSETB pins, moderately low resistance values should be used to minimize the scaling errors. Very low resistor values will reduce the load driving capabilities of RMSA /RMSB outputs while larger values will result in scaling errors and increase of the temperature errors because of the mismatch of the on-chip and external resistor temperature coefficients. Optimized slope = ß * log slope Optimized intercept = log intercept - (RFBK / RSET) * Vzc RFBK ß= RFBK // RSHUNT // RSET When RFBK = 0 Ohm to set RMS = VSET, then ß = 1 Note: Avoid excessive loading of the RMS output; keep CLOAD < 35 pF, and RLOAD > 375 12 - 146 250 TIME (usec) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz LOG-Slope and Intercept (Continued) Example: The logarithmic slope can be simply increased by choosing appropriate RFBK and RSHUNT values while not populating the RSET resistor on the evaluation board to keep the intercept at nominal value. Setting RFBK = 820 and RSHUNT = 2200 results in an optimized slope of: Optimized Slope = ß * log_slope = 1.42 * 36.5 mV / dB Optimized Slope = 52 mV / dB Slope Adjustment 12 4.5 4 3.5 RMSOUT (V) 3 2.5 2 Slope=51mV/dB Rset=open Rfbk=820ohm Rshunt=2200ohm 1.5 1 Slope=36.2mV/dB Rset=open Rfbk=0ohm Rshunt=open 0.5 0 -70 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) Example: The logarithmic intercept can also be adjusted by choosing appropriate RFBK, RSHUNT, and RSET values while keeping the logarithmic slope at about 50mV/dB. Setting RFBK = 820 Ohm and RSHUNT = RSET = 4700 results in an optimized slope of: Optimized Slope = ß * log_slope = 1.4 * 36.5 mV / dB Optimized Intercept = log_intercept - RFBK * VZC RSET Optimized Slope = 51 mV / dB Optimized Intercept = log_intercept - 0.174 * VZC Intercept Adjustment Intercept Adjustment (with Temp) 4.5 4 3.5 4.5 Rset=4700ohm Rfbk=820ohm Rshunt=4700ohm +25C +85C -40C 3.5 3 VOUT (V) RMS (V) VSET=-1.6V 4 3 2.5 2 Vzc=0 Vzc=0.8 Vzc=1.6 Vzc=3.2 Vzc=-0.8 Vzc=-1.6 Vzc=-3.2 1.5 1 0.5 0 -60 POWER DETECTORS - SMT High Slope Nominal -50 -40 -30 -20 -10 INPUT POWER (dBm) 0 VSET=0V 2.5 VSET=1.6V 2 1.5 1 0.5 10 0 -60 -50 -40 -30 -20 -10 0 10 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 147 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz iPAR ­ Envelope Power Normalized To Average Power The INSA and INSB are envelope detector outputs for A & B channels that provide a measurement of instantaneous signal power normalized average power. This feature is called Instantaneous Peak to Average Ratio (iPAR). The iPAR makes peak-to-average power comparisons immediately obvious. This simultaneous measurement of envelope power and average power in HMC714LP5E HMC714LP5E has two fundamental advantages over traditional methods of which employ two different power detectors working in parallel. · Both the iPAR and RMS detectors share the same measurement structures, and · Both the iPAR and RMS detectors share the same temperature compensation mechanisms. 12 With traditional implementation of peak-to-average power detection, the dominant source of errors is due to the uncorrelated measurement deviations between the two separate detectors. Both detectors in the HMC714LP5E HMC714LP5E share the same circuits (INSA-RMSA pair and INSB -RMSB pair), so any deviations, however small, are fully correlated. 1. A measurement of instantaneous signal power normalized to average power In this most basic measurement mode, INSA (INSB) output is terminated to ground using an external resistor which forms an output buffer with the internal transistor Q1 connected in emitter-follower configuration. With Rext = 3.9 kOhm (R20 and R12 on the evaluation board for A & B channels), INSA (INSB) output can track the input envelope up to a modulation bandwidth of 35 MHz at which point the output swing drops by 50%. For an unmodulated input signal with f>>35 MHz, the INSA (INSB) output will provide a constant value of approximately 1.6V indicating that the instantaneous power is equal to the average power. The INSA (INSB) output voltages linearly follow the instantaneous power levels at the detector input with the transfer gain scaled by an external voltage applied to VTGT (pin 28). For a nominal voltage of 2V on VTGT the scaling factor of the INSA (INSB) output is 200 mV. INS[A ,B] = IREF[A ,B] + SF*(EAR[A ,B] - 1) where IREF[A ,B] = (VCC[A ,B]*REXT) /( 3*(REXT+65 Ohm) 1.6 V (for VCC = 5V, REXT = 2 k) where EAR[A ,B] = input signal RF AM envelope-to-average power ratio on channel [A,B] and SF = the scaling factor set by an external voltage applied to VTGT (200 mV when VTGT = 2.0V) For example, the INSA (INSB) voltage will drop to 1.4 V (1.6-0.2V) when the input power instantaneously drops to zero, and will increase to 2.2V (1.6+0.2*3) when the input power instantaneously increases to 4 times the average power. With lower VTGT values the scaling factor also decreases, allowing INSA (INSB) to linearly track larger swings of input power. iPAR Output & Input RF Signal Envelope vs. Time for an Input Crest Factor of 9.03 dB @ 1900 MHz [2] 2.25 1.25 0.5 0.75 INS [A,B] (V) 1 0 0.25 -0.5 Input RF Signal Envelope 1 2 3 Time (usec) 4 INPUT RF SIGNAL ENVELOPE (V) 1.75 12 - 148 3 1.5 IPAR Output 0 INS [A,B] Output vs. Instantaneous Input Power (Normalized to Average Power) IPWR(t) = (VTGT/10 VTGT/10)x(Pin(t)/Pavg)+(1.6-(Vtgt/10) 2.8 IPWR OUTPUT (V) POWER DETECTORS - SMT The iPAR feature can be configured to provide two major functions: 2.6 2.4 2.2 2 1.8 =Pin/Pav*0.2+(1.6-0.2) IPWR Output VTGT = 2V =Pin/Pav*0.1+(1.6-0.1) IPWR Output VTGT = 1V 1.6 1.4 5 0 2 4 6 8 10 INSTANTANEOUS INPUT POWER (NORMALIZED TO AVERAGE POWER) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz PAR ­ Envelope Power Normalized To Average Power (Continued) The INSA (INSB) output is highly independent from input signal frequency, input average power, and temperature. Proprietary design techniques assure very little part-to-part variation and maintain a very high degree of match between channels. 2. A measurement of peak-power normalized to average power To measure peak power, a peak-hold mechanism is required at the INSA (INSB) output. The peak-hold circuit can be as simple as an RC combination on the INSA (INSB) pin. In this configuration, peak excursions of the input signal is stored as a peak voltage on the external Cext capacitor. Rext is used to set the quiescent bias point of Q1, and together with Cext will for a time-constant for the peak-hold function. The larger Cext is the longer the peakdetector will "remember" the largest signal excursion; conversely a smaller value of Cext will result in a shorter memory, and less filtering. The value of Rext for this "peak-power" mode of the iPAR function should be much larger than the value used for the iPAR mode described previously (instantaneous power tracking mode) to extend the RextCext time-constant. INS[A ,B] = IREF[A ,B] + SF*(PAR[A ,B] - 1) where IREF[A ,B] = VCC[A ,B] / 3 + 0.15V 1.82V (for VCC = 5V, REXT = 500 k) where PAR[A ,B] = input signal peak-to-average ratio on channel [A,B] and SF = the scaling factor set by an external voltage applied to VTGT (150 mV when VTGT = 2.0V) The graphs below describes the INSA (INSB) peak-hold levels as a function of input peak-to-average ratio (PAR) and also crest factor. Note how the voltage applied at VTGT affects the INSA (INSB) reading. The voltage applied to the VTGT pin also has a secondary effect on crest-factor performance. The VTGT signal optimizes internal bias points for measurement accuracy at higher crest factors: refer to the section under "Adjusting VTGT for greater precision" for a iPAR Feature Peak-to-Average Power Detection Confi guration (REXT = 500, CEXT = 100 nF) iPAR Feature Peak-to-Average Power Detection Confi guration vc Crest Factor (CEXT = 100 nF) 3.4 3.4 3.2 3.2 INSA Linear Fit 3 2.8 2.8 INSA (V) INSA (V) VTGT=2V Rext=100kohm VTGT=2V Rext=500kohm VTGT=1V Rext=500kohm 3 POWER DETECTORS - SMT 12 2.6 VTGT=2V 2.4 2.2 256QAM 256QAM (1Mbps) Crest Factor~7.8dB 2.6 2.4 2.2 VTGT=1V 2 Single Tone (CW) Inputs 2 1.8 1.8 Single Tone (CW) Inputs 1.6 1 2 3 4 5 6 7 8 9 10 PEAK TO AVERAGE POWER RATIO (PAR) 11 12 1.6 2 3 4 5 6 7 8 9 10 11 INPUT CREST FACTOR (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 13 14 12 - 149 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz PAR ­ Envelope Power Normalized To Average Power (Continued) full description on crest factor optimization. iPAR Reference Outputs: IREFA & IREFB HMC714LP5E HMC714LP5E also provides two reference voltage outputs, IREFA (pin 26) and IREFB (pin 15) for A & B channels, which when used with the INSA /INSB outputs allows cancellation of temperature and supply related variations of the INSA /INSB DC offsets. INSA /INSB DC offsets are equal to the IREFA /IREFB reference voltages, and these levels corresponds to the envelope-to-average ratio (EAR) or peak-to-average ratio (PAR) of an unmodulated carrier (CWtone crest factor = 3 dB). For the best cancellation of the effects of temperature and supply voltage on INSA /INSB DC offsets, load both the INSA /INSB and IREFA /IREFB outputs with an equivalent RC network. Propagation Delay of INSA & INSB Propagation Delay with Wideband Single Ended Input Itnerface 0.2 2.85 0.15 Input Signal Envelope (V) The proper operation of the iPAR feature depends on the proper settling of the RMS outputs because both the iPAR feature and the RMS detection feature share the same internal structures. After internal mechanisms of the detector have settled, the RMS outputs (RMSA & RMSB) provide a reading of input average power while iPAR outputs (INSA & INSB) provides the instantaneous (or peak) power value of the input signal. There is of course some finite propagation delay from the instant of input power change to the change of INSA (INSB). That propagation delay is defined by the external capacitor, Cext. The figure illustrates the propagation delay from a 900 MHz, 6-tone (multi-carrier) input signal at -10 dBm average power to the INSA output of HMC714LP5E HMC714LP5E. As illustrated, the propagation delay is 26 nsec with the detector configured with the wideband, single-ended input interface. The use of the differential input interface with the balun increases the propagation delay to 37 nsec under similar test conditions. 2.49 2.14 0.1 0.05 26nS 1.78 0 1.42 -0.05 1.07 -0.1 0.71 -0.15 INSA (V) POWER DETECTORS - SMT 12 0.36 0 -0.2 -150 -100 -50 0 50 100 150 200 250 Vpd (Vdc) Standby Mode The ENX can be used to force the power detector into a low-power standby mode. In this mode, the entire power detector is powered-down. As ENX is deactivated, power is restored to all of the circuits. There is no memory of previous conditions. Coming-out of stand-by, CINT and COFS capacitors will require recharging, so if large capacitor values have been chosen, the wake-up time will be lengthened. DC Offset Compensation Loop Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical function needed for maintenance of measurement accuracy and sensitivity. The DC offset cancellation loop performs this function, and its response is largely defined by the capacitance off. Setting DC offset cancellation, loop bandwidth strives to strike a balance between offset cancellation accuracy, and loop response time. A larger value of COFS results in a more precise offset cancellation, but at the expense of a slower offset cancellation response. A smaller value of COFS tilts the performance trade-off towards a faster offset cancellation response. The optimal loop bandwidth setting will allow internal offsets to be cancelled at a minimally acceptable speed. 12 - 150 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz DC Offset Compensation Loop (Continued) DC Offset Cancellation Loop Bandwith 1 (500)(COFS + 20 x 1012) Hz For example: loop bandwidth for DC cancellation with COFS = 1nF, bandwidth is ~62 kHz Note: The measurement error produced by internal DC offsets cannot be measured repeatably at any single operating point, in terms of input signal frequency and level. Measurement error must be calculated to a best fit line, over the entire range of input signal (again, in terms of signal level and frequency). There are two competing aspects of performance, for which VTGT can be used to set a preference. Depending on which aspect of precision is more important to the application, the VTGT pin can be used to find a compromise between two sources of RMS output error: internal DC offset cancellation error and deviation at high crest factors (>12dB). · Increasing VTGT input voltage will reduce the effect of internal DC offsets, but deviation at high crest factors will increase slightly. A 50% increase in VTGT should produce an 18% improvement in RMS precision due to a reduction in internal DC offsets effects. · Decreasing VTGT input voltage will reduce errors at high crest factors, but internal DC offsets will have more of an effect on measurement accuracy. If input signal crest factor is not expected to exceed 10dB, you can improve RMS precision by increasing VTGT voltage. Keep in mind that changing VTGT also adjusts the log-intercept point, which shifts the "input dynamic range". The best set-point for VTGT will be the lowest voltage that still maintains the "input dynamic range" over the required range of input power. This new VTGT set-point should optimize the amount of DC offset related errors. If error performance at high crest factors requires optimization, set VTGT for the maximum tolerable error at the highest expected crest factor. Increasing VTGT beyond that point will unnecessarily compromise internal DC offset cancellation performance. After changing VTGT, re-verify that the "input dynamic range" still covers the required range of input power. VTGT should be referenced to VREF for best performance. It is recommended to use a temperature stable DC amplifier between VTGT and VREF to create VTGT > VREF. The VREF pin is a temperature compensated voltage reference output, only intended for use with VTGT. VTGT infl uence on DC offset compensation RMS Output Error vs. Crest Factor 0 VGTG RMSA/RMSB ERROR (dB) 12 POWER DETECTORS - SMT Adjusting VTGT for Greater Precision 1.0 V -1 nominal + 0.2 dB 1.5 V -0.5 Error due to internal DC offsets nominal + 0.1 dB 2.0 V nominal 3.0 V 7.nominal + 0.06 dB 3.5 V nominal + 0.1 dB -1.5 -2 VTGT=0.5V VTGT=1V VTGT=2V VTGT=3V -2.5 -3 0 2 4 6 8 10 12 14 CREST FACTOR (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 151 HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz System Calibration Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy absolute accuracy requirements. When performing this calibration, choose at least two test points: near the top-end and bottom-end of the measurement range. It is best to measure the calibration points in the regions (of frequency and amplitude) where accuracy is most important. Derive the log-slope and log-intercept, and store them in non-volatile memory. Calibrate iPAR scaling by measuring the peak-to-average ratio of a known signal. For example if the following two calibration points were measured at 2.35 GHz: With Vrms = 2.34V at Pin= -7dBm, POWER DETECTORS - SMT 12 - 152 Vrms measures 2.13V Slope Calibration Constant = SCC [Measured Pin] = [Measured Vrms]*SCC + ICC SCC = (-16+7)/(1.84-2.34) = 18 dB/V [Measured Pin] = 2.13*18.0 ­ 49.12 = -10.78dBm Intercept Calibration Constant = ICC 12 Now performing a power measurement: and Vrms=1.84V at Pin= -16dBm An error of only 0.22dB ICC = Pin ­ SCC*Vrms = -7 ­ 18.0 * 2.34 = -49.12dBm Factory system calibration measurements should be made using an input signal representative of the application. If the power detector will operate over a wide range of frequencies, choose a central frequency for calibration. Layout Considerations · Mount RF input coupling capacitors close to the IN+ and IN- pins. · Solder the heat slug on the package underside to a grounded island which can draw heat away from the die with low thermal impedance. The grounded island should be at RF ground potential. · Connect power detector ground to the RF ground plane, and mount the supply decoupling capacitors close to the supply pins. Defi nitions: · Log-slope: slope of PIN ­> VRMS transfer characteristic. In units of mV/dB · Log-intercept: x-axis intercept of PIN ­> VRMS transfer characteristic. In units of dBm. · RMS Output Error: The difference between the measured PIN and actual PIN using a line of best fit. [measured_PIN] = [measured_VRMS] / [best-fit-slope] + [best-fit-intercept], dBm · Input Dynamic Range: the range of average input power for which there is a corresponding RMS output voltage with "RMS Output Error" falling within a specific error tolerance. · Crest Factor: Peak power to average power ratio for time-varying signals. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC714LP5 HMC714LP5 / 714LP5E 714LP5E v05.0309 DUAL RMS POWER DETECTOR 0.1 - 3.9 GHz Notes: POWER DETECTORS - SMT 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 12 - 153