HMC372LP3 372LP3E HMC372LP3E HMC356LP3

v02.0605 LOW NOISE AMPLIFIERS - SMT 4 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The

HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 LOW NOISE AMPLIFIERS - SMT 4 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC372LP3 HMC372LP3 / HMC372LP3E HMC372LP3E is ideal for basestation receivers: Noise Figure: < 1 dB · GSM, GPRS & EDGE Gain: 15 dB · CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature · Private Land Mobile Radio Single Supply: +5V @ 100 mA Output IP3: +34 dBm 50 Ohm Matched Output Functional Diagram General Description The HMC372LP3 HMC372LP3 & HMC372LP3E HMC372LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. The HMC372LP3 HMC372LP3 & HMC372LP3E HMC372LP3E share the same package and pinout with the HMC356LP3 HMC356LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier. Electrical Specifi cations, TA = +25° C, Vs = +5V Parameter Min. Frequency Range Gain Typ. Max. Min. 810 - 960 12.5 Gain Variation Over Temperature Typ. Max. 700 - 1000 14.5 11.5 Units MHz 14.5 dB 0.008 0.015 0.008 0.015 Noise Figure 1.0 1.3 1.0 1.3 Input Return Loss 25 25 dB Output Return Loss 14 12 dB Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) 20 18 21 Supply Current (Idd) 4 - 50 34 100 dB 22 30 dB 20 dBm 22.5 17 23.5 Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) dB / °C dBm 33 dBm 100 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz GAIN (dB) & P1dB (dBm) 10 RESPONSE (dB) 5 S21 S11 S22 0 -5 -10 -15 -20 -25 -30 1.2 21 1.1 20 1 19 0.9 18 0.6 15 0.5 0.4 14 13 -40 12 4.5 0.5 0.75 1 1.25 1.5 FREQUENCY (GHz) 1.75 2 Noise Figure 0.2 4.75 5 5.25 5.5 Noise Figure vs. Temperature 1.5 20 19 1.4 18 1.3 NOISE FIGURE (dB) + 25 C + 85 C - 40 C 17 16 15 14 13 1.2 1.1 1 0.9 0.8 12 0.7 11 0.6 10 0.7 0.3 VOLTAGE SUPPLY (Vdd) Gain vs. Temperature GAIN (dB) 0.7 16 -35 + 25 C + 85 C - 40 C 0.5 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 0.7 1 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 0.95 1 Noise Figure vs. Vdd Gain vs. Vdd 1.5 20 19 1.4 18 1.3 NOISE FIGURE (dB) + 4.5 V + 5.0 V + 5.5 V 17 GAIN (dB) 0.8 Gain P1dB 17 NOISE FIGURE (dB) 22 15 LOW NOISE AMPLIFIERS - SMT 20 0.25 4 Gain, Noise Figure & Power vs. Supply Voltage @ 850MHz Broadband Gain & Return Loss 16 15 14 13 + 4.5 V + 5.0 V + 5.5 V 1.2 1.1 1 0.9 0.8 12 0.7 11 0.6 0.5 10 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 51 HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 -2 -10 RETURN LOSS (dB) RETURN LOSS (dB) -4 + 25 C + 85 C - 40 C -15 -20 -25 -30 -6 +25 C +85 C -40 C -8 -10 -12 -14 -16 -35 -18 -40 0.7 -20 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 Output IP3 vs. Temperature 0.7 COMPRESSION POINT (dBm) 38 + 25 C + 85 C - 40 C 37 36 35 34 33 32 31 1 0.95 1 0.95 1 23 PSAT 22 21 20 P1dB 19 +25 C +85 C -40 C 18 17 16 15 0.75 0.8 0.85 0.9 0.95 1 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) Output IP3 vs. Vdd P1dB vs. Vdd 40 25 39 24 38 23 + 4.5 V + 5.0 V + 5.5 V 37 22 P1dB (dBm) OUTPUT IP3 (dBm) 0.95 24 FREQUENCY (GHz) 36 35 34 21 20 19 33 18 32 17 31 16 30 0.7 4 - 52 0.8 0.85 0.9 FREQUENCY (GHz) 25 39 30 0.7 0.75 P1dB & Psat vs. Temperature 40 OUTPUT IP3 (dBm) LOW NOISE AMPLIFIERS - SMT 4 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz + 4.5 V + 5.0 V + 5.5 V 15 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Output IP3 vs. Input Power @ 950 MHz 1 MHz Tone Separation 6 MHz Tone Separation -5 ISOLATION (dB) OUTPUT IP3 (dBm) 38 37 36 35 34 +25 C +85 C -40 C -10 -15 -20 33 32 -25 31 -30 30 -20 -15 -10 -5 INPUT POWER PER TONE (dBM) 0 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 LOW NOISE AMPLIFIERS - SMT 0 40 39 4 Reverse Isolation vs. Temperature 4 - 53 HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 LOW NOISE AMPLIFIERS - SMT 4 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Absolute Maximum Ratings Typical Supply Current vs. Vdd +8.0 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vs = +5.0 Vdc) +15 dBm +4.5 98 Channel Temperature 150 °C +5.0 100 +5.5 102 Drain Bias Voltage (Vdd) Continuous Pdiss (T = 85 °C) (derate 15.6 mW/°C above 85 °C) 1.015 W Thermal Resistance (channel to ground paddle) 64.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC372LP3 HMC372LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC372LP3E HMC372LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H372 XXXX [2] H372 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 4 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Pin Number Function Description 1, 5, 8, 9 N/C No connection necessary. These pins may be connected to RF/DC ground. 2, 4, 6, 10, 12, 13, 14, 16 GND These pins must be connected to RF/DC ground. 3 RF IN This pin is matched to 50 Ohms with a 22 nH inductor to ground. See Application Circuit. ACG AC Ground - An external capacitor of 0.01F to ground is required for low frequency bypassing. See Application Circuit for further details. Vdd Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. RF OUT Interface Schematic This pin is AC coupled and matched to 50 Ohms. 7, 15 11 Application Circuit LOW NOISE AMPLIFIERS - SMT 4 Pin Descriptions Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 F ±10% capacitor is recommended. Note 2: L1, L2 and C1 should be located as close to the pins as possible. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 55 HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Evaluation PCB LOW NOISE AMPLIFIERS - SMT 4 List of Materials for Evaluation PCB 106821 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J4 DC Pin C1 10000 pF Capacitor, 0402 Pkg. C2 10000 pF Capacitor, 0060 Pkg. L1 22nH Inductor, 0402 Pkg. L2 18nH Inductor, 0603 Pkg. U1 HMC372LP3 HMC372LP3 / HMC372LP3E HMC372LP3E Amplifier PCB [2] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 106722 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 4 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC372LP3 HMC372LP3 / 372LP3E 372LP3E v02.0605 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 4 LOW NOISE AMPLIFIERS - SMT Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 57