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HM-10 Datasheet

Part Manufacturer Description PDF Type
HM100 BI Technologies High Current Low Profile Surface Mount Inductors Original
HM100-251R0 BI Technologies High Current Low Profile Surface Mount Inductors Original
HM100-251R0LFTR13 BI Technologies Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR 1.0UH 70A LOW PROF SMD Original
HM100-251R5 BI Technologies High Current Low Profile Surface Mount Inductors Original
HM100-251R5LFTR13 BI Technologies Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR 1.5UH 45A LOW PROF SMD Original
HM100-252R0 BI Technologies High Current Low Profile Surface Mount Inductors Original
HM100-252R0LFTR13 BI Technologies Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR 2.0UH 35A LOW PROF SMD Original
HM100494 Renesas Technology 16384-word x 4-bit Fully Decoded Random Access Memory Original
HM100500 Renesas Technology 262144-word x 1-bit Fully Decoded Random Access Memory Original
HM100504 Renesas Technology 65536-word x 4-bit Random Access Memory Original
HM100K Ohmite Inductor: RF: 0.1u: 10%: 25M: 35: Phenolic: 895m: Axial Original
HM10104 Harris Semiconductor Integrated Circuits Data Book 1975 Scan
HM1-0104 Harris Semiconductor Integrated Circuits Data Book 1975 Scan
HM10110 Harris Semiconductor Integrated Circuits Data Book 1975 Scan
HM1-0110 Harris Semiconductor Integrated Circuits Data Book 1975 Scan
HM-101101-1.3-8A Tyco Electronics Labels, Labeling, Computers, Office - Components, Accessories, LABEL ID PRODUCT Original
HM-101101-1.3-8A (E27436-000) Tyco Electronics Label ID Products; HM-101101-1.3-8A ( Tyco Electronics ) Original
HM101484H Renesas Technology 4096-word x 4-bit Fully Decoded Random Access Memory Original
HM101490 Renesas Technology 65536-word x 1-bit Fully Decoded Random Access Memory Original
HM101494 Renesas Technology 16384-word x 4-bit Fully Decoded Random Access Memory Original
Showing first 20 results.

HM-10

Catalog Datasheet MFG & Type PDF Document Tags

steam trap

Abstract: STRAINER Data Pack G Issued September 2000 314-2129 Data Sheet RS stock no. 365-6511 365-6527 365-6533 365-6549 365-6555 365-6561 HM00/6 HM00/7 HM00/8 HM10/7 HM10/8 HM10/10 Series HM Inverted Bucket , used in this region 4 PMX - max. differential pressure Screwed Screwed HM10/7 HM00/6 HM00/7 HM00/8 HM10/8 HM10/10 HM12/10 HM12/12 Screwed HM12/7 bar 14 12.5 10 8.5 4 14 12 3 13 Sizes and pipe connections /2" - HM00, 3/4" - HM10 Screwed BSP 1 Dimensions (approximate) in millimetres
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steam trap STRAINER ASTM a240 HM00 HM-10 GG20 HM10/7 HM10/8 HM10/10 HM00/10

HM10

Abstract: HM16 0.3A HM10 6 0.6 -0.4 -1 I2t2 Breaking Capacity Typ. Resistance1 Joule Integral2 HM05 , PSE I2t-tI2t-t Characteristics 103 HM50 HM32 HM16 5 HM20 6 10 HM10 4 2 HM05 3 HM32 7 HM16 HM50 20 10 1 HM10 10 HM05 HM03 1 10-1
Daito Communication Apparatus
Original
HM10 HM16 HM20 0051A E59783 051A2 023A2 5050P HM502 AC100200V

DHT11

Abstract: BC417143 HM Bluetooth module datasheet Condemn the copycat company copied behavior on HM-10!!!!!! If you , CSR Chip. HM-10, HM-11, HM-12 is Bluetooth V4.0 BLE version. Use TI Chip. HM-01, HM-02, HM-09, HM-10 , HM-10 2-3.7V 26.9*13*2.2 256Kb CC2540/1 V4.0 BLE HM-11 2.5-3.7V 13.5*18.5*2.2 , Class1 Testing HM-06 HM-07 HM-08 HM-09 HM-10 BT 2.1 BT 2.1 BT 2.1 BT 2.1 , -09. 6.1 HM-10 Schematic 6.2 HM-10 Size -Last
JNHuaMao Technology
Original
DHT11 BC417143 BC417143* commands D-4020
Abstract: x L L L D o u t* M ode x L L H N ot Selected W rite "O'' W rite " 1" Read HM100490CG-15 Pin Arrangement · HM100490-15 HM100490F-15 Not*) Th« «pacifications of thi» davica ara «ubjact , x 1-bit Fully Decoded Random Access Memory HM100490-15 is ECL , such as main memories for super computers. HM100490-15 Preliminary Features · · · · · · 65,536 , . 320mW (typ.) Output obtainable by wired-OR (open emitter) HM100490F-15 Function Table Iuput -
OCR Scan
HM100490-15--------------65536-
Abstract: H M 100470 4 0 9 6 - word x 1 -b it Fully Decoded Random A ccess Memory The HM100470 is a 4096-words x 1-bit, read/write, random access memory developed for high speed systems such as scratch pads and , with double metal ization. The HM100470 is compatible with the H0100K ECL families and includes on-chip , - HM10 0 4 7 0 E L E C T R IC A L C H A R A C TER IS T IC S · DC CHARACTERISTICS (Vee " Hem , Hitachi America Ltd. · 2210 O'Toole Ave. · San Jose, CA 95131 · (408)435-8300 687 HM10 0 4 7 0 I T -
OCR Scan

D1323

Abstract: HM100484-10 4096-wrod x 4-bit Fully Decoded Random Access Memory The H M 100484 is E C L 100k compatible, 4096-words by 4-bits read/write random access memory developed for high speed systems such as acratch pads and control/buffer storage. Features · 4096-word x 4-bits organization · Very high speed , (408)435-8300 HM10 0 4 8 4 - 1 0 - Absolute Maximum Ratings (Ta = , Jose, C A 95131 · (408) 435-8300 691 HM10 0 4 8 4 -1 0 Write Mode 0 692 H IT A C H I
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OCR Scan
D1323
Abstract: HM10500-15 - P re lim in a ry 262,144 Words x 1-Bit Fully Decoded Random Access Memory DESCRIPTION HM10500-15 is E C L10K com patible, 262,144-words x 1-bit, read/ write random access m em ory , Plaza · 2000 Sierra Point Pkwy. · Brisbane, CA 94005-1819 · (415) 589-8300 - HM10500-15 BLOCK , · 2000 Sierra Point Pkwy. · Brisbane, CA 94005-1819 · (415) 589-8300 1269 HM10 5 0 0 -1 5 , Hitachi Plaza · 2000 Sierra Point Pkwy. · Brisbane, CA 94005-1819 · (415) 589-8300 HM10 5 0 0 -1 5 -
OCR Scan
256X1024
Abstract: : HM10470-1 H M 10470 15ns (max) 25ns (min) â  PIN A R R A N G E M E N T HM10470-1 15ns (min) Low , '¢ San Jose, CA 95131 â'¢ (408) 435-8300 639 HM10470, , America Ltd. â'¢ 2210 Oâ'™Toole Ave. â'¢ San Jose, CA 95131 â'¢ (408) 435-8300 HM10470, HM10470-1 , Ltd. â'¢ 2210 O'Toole Ave. â'¢ San Jose, CA 95131 â'¢ (408) 435-8300 HM 10470, HM10 4 7 0 -1 3 , HM 10470, HM10 4 7 0 -1 SUPPLY CURRENT vs. SUPPLY VOLTAGE Supply C u rre n t Iti (n A -
OCR Scan

2 bolt 400 mcm terminal lug

Abstract: R0400 160T04009 020904 1SNC 160 001 C0205 M 300/42.EE Power terminal blocks Type II M 400/52.EE Spacing 42 mm (1.65") see size on following pages 1 stud 31,5 x 5 with - 2 screws HM12 for lug or bar - 1 central bolt HM10 for transversal connection 1 stud 40 x 5 with - 2 screws HM16 for lug or bar - 2 central bolts HM6 for transversal connection Color Type Color Type Grey DIN 1 - DIN 3 Spacing 52 mm (2.05) see size on following pages M 300/42.EE Grey
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R2700 R1600 R1200 R2200 R0400 CPU42 2 bolt 400 mcm terminal lug 500 MCM MCM500 PR5 ENTRELEC R1700

12HM

Abstract: EC 9410 HM100404 S©rÌ©S - Preliminary 16384-word x 4-bit Fully Decoded Random Access Memory The HM10 0 4 9 4 is EC L 100K compatible, 16384-w ord by 4-bits read/write random access memory developedfor high speed systems such as scratch pads and control/buffer storage. Features · · · · · · 16384 , 94005-1819 · (415) 589-8300 HM100494 Serles Absolute Maximum Ratings Item Su p p ly V o ltag e In p u , 2000 Sierra Point Pkwy. · Brisbane, CA 94005-1819 · (415) 589-8300 HM100494 S e r le s
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OCR Scan
12HM EC 9410 EC 9410 -F
Abstract: HM100415.HM100415CG T E S T C IR C U IT AND WAVEFORMS 1. LOADNG CONDITION 2. INPUT PULSE 'r*> % tjr* 3 , ( 408 ) Hitachi Am erica Ltd. · 2210 O 'Toole Ave. · San Jose, CA 95131 435-8300 675 HM10 0 -
OCR Scan

HM10422-7

Abstract: HM10422-7 2 5 6 - word x 4 - b it Fully D ecoded Random A c c e s s Mem ory The H M 10422 is ECL 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages. Four active Low Block Select lines are provided to , Unit ns ns ns ns ns ns ns 3 3 5 8 tw -4 n s ns ns 206 0 HITACHI HM10422-7 3. RISE , |ï 5 g li 3 f là 3 i |á 3 I 0 HITACHI 205 HM10 4 2 2 -7
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OCR Scan
Abstract: HM10470-20 4 0 9 6 *word x 1-bit Fully Decoded Random Access Memory The HM10470 it ECL 10K compatible, 4096-words x 1-bit, read/ write, random access memory developed for high speed systems such as , Hitachi America Ltd. · 2210 O'Toole Ave. · San Jose, CA 95131 · (408) 435-8300 HM10470-20 ELECTRICAL , , oxide isolation method with double metalization. The HM10470 is encapsulated in cerdip-18 pin package , 95131 · (408) 435-8300 645 HM10 4 7 0-2 0-3. RISE/FALL TWE lu » Oetpal Rím Ttaw OrtfM Fell T -
OCR Scan
Abstract: HM10474-8,HM10474-10 1 0 2 4 - w o r d x 4 - b i t Fully D e co d e d R andom Access M e m o ry , -bit organization â'¢ Fully compatible w ith 10K ECL level â'¢ Address access time: HM10474-8 8ns (max) HM 10474-10 10ns (max) â'¢ Write pulse w idth: HM10474-8 5ns (min) HM10474-10 5ns (min) â'¢ Low power , -HM10474-8, HM10474-10 â  ELECTRICAL C H A R A C T E R IS TIC S â'¢ DC CHARACTERISTICS ( V t £ - - 5 . 2 , Oâ'™Toole Ave. â'¢ San Jose, CA 95131 â'¢ (408) 435-8300 637 HM10 4 7 4 -8 , HM 1 0 4 7 4 -1 0 -
OCR Scan
Abstract: /-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2640A-HM12/-HZ12 (VFS = 4.096V) LTC2640-8 SYMBOL PARAMETER , . LTC2640-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2640A-HM12/-HZ12 (VFS = 4.096V) SYMBOL PARAMETER CONDITIONS , . LTC2640-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2640A-HM12/-HZ12 (VFS = 4.096V) SYMBOL PARAMETER CONDITIONS , /-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2640A-HM12/-HZ12 (VFS = 4.096V) SYMBOL PARAMETER t1 SDI Valid Linear Technology
Original
LTC2640 12-/10-/8-B LTC2640-L LTC2640-H LTC2640A-12 LTC2640-Z

LTC2631-HZ8

Abstract: LM8(650)w/0 Circuit unless otherwise specified. LTC2631-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2631A-HM12/-HZ12 (VFS = , otherwise specified. LTC2631-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2631A-HM12/-HZ12 (VFS = 4.096V) SYMBOL , °C. VCC = 4.5V to 5.5V, VOUT unloaded unless otherwise specified. LTC2631-HM12/-HM10/-HM8/-HZ12/-HZ10 , Figure 1) (Note 13). LTC2631-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2631A-HM12/-HZ12 (VFS = 4.096V
Linear Technology
Original
LTC2631 LTC2631-L LTC2631-H LTC2631A-12 LTC2631-Z LTC2631-M LTC2631-HZ8 LM8(650)w/0 Circuit LTC2631-HZ12 A 2631 TSOT-23
Abstract: HM10422-7 2 5 6 - w ord x 4 - b it F u lly D e c o d e d R a n d o m A c c e s s M em o ry The HM 10422 is ECL 10K compatible, 256-word x 4-bit, read write, random access memory developed for high , . â'¢ San Jose, CA 95131 â'¢ (408) 435-8300 5 8 HM10422-7 3. R ISE/FALL TME Itm O utput , , oxide isolation method with double metalization. The HM10422 is encapsulated in cerdip-24 pin package , . â'¢ 2210 O â'™Toole Ave. â'¢ San Jose, C A 95131 â'¢ (408) 435-8300 623 HM10 4 2 2 -7 -
OCR Scan
F10422
Abstract: H M 1 0 4 7 0 2 0 4 0 9 6 - word x 1-b it Fully D ecoded Random A c c e ss M em ory The HM10470 is EC L 10K compatible, 4096-words x 1-bit, read/ write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process uses the Hitachi's low capacitance, oxide isolation method with double metalization. The HM10470 is encapsulated in , IT A C H I 231 HM10 4 7 0 -2 0 -3. RISE/FA LL TIME Item O utput R ic e T im e O utput F a -
OCR Scan

MARKING lcwr

Abstract: marking codes sc70 specifications are at TA = 25°C. VCC = 4.5V to 5.5V, VOUT unloaded unless otherwise specified. LTC2630-HM12/-HM10 , specified. LTC2630-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2630A-HM12/-HZ12 (VFS = 4.096V) CONDITIONS MIN TYP , LTC2630-HM12/-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2630A-HM12/-HZ12 (VFS = 4.096V) SYMBOL PARAMETER t1 t2 t3 t4 t5
Linear Technology
Original
MARKING lcwr marking codes sc70 LTC2630 LTC2630-L LTC2630-H LTC2630A-12 16-/14-/12-B
Abstract: °C. VCC = 4.5V to 5.5V, VOUT unloaded unless otherwise specified. LTC2630-HM12/-HM10/-HM8/-HZ12/-HZ10 , /-HM10/-HM8/-HZ12/-HZ10/-HZ8, LTC2630A-HM12/-HZ12 (VFS = 4.096V) SYMBOL PARAMETER CONDITIONS MIN , , otherwise specifications are at TA = 25°C. VCC = 4.5V to 5.5V. (See Figure 1) (Note 8). LTC2630-HM12/-HM10 Linear Technology
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LTC1821 LTC2600/LTC2610/LTC2620 LTC2601/LTC2611/LTC2621 LTC2602/LTC2612/LTC2622 LTC2604/LTC2614/LTC2624

10G CDR

Abstract: ADC16V130 0.3A HM10 6 0.6 -0.4 -1 I2t2 Breaking Capacity Typ. Resistance1 Joule Integral2 HM05 , PSE I2t-tI2t-t Characteristics 103 HM50 HM32 HM16 5 HM20 6 10 HM10 4 2 HM05 3 HM32 7 HM16 HM50 20 10 1 HM10 10 HM05 HM03 1 10-1
National Semiconductor
Original
ADC16V130 10G CDR VCO 10G CPRI CDR LMX23X6 DS50EV401 LMK04000 130-M OC-192

mcp0805f800

Abstract: MCP0603F121 - HM10 0 4 7 0 E L E C T R IC A L C H A R A C TER IS T IC S · DC CHARACTERISTICS (Vee " Hem , Hitachi America Ltd. · 2210 O'Toole Ave. · San Jose, CA 95131 · (408)435-8300 687 HM10 0 4 7 0 I T
AEM Components
Original
mcp0805f800 MCP0603F121 MCP0805F500 MCP1206F300 MCP0805F121 05f - 2a 1206F MCP1206F500 MCP1206F800
Abstract: HM100404 S©rÌ©S - Preliminary 16384-word x 4-bit Fully Decoded Random Access Memory The HM10 0 4 9 4 is EC L 100K compatible, 16384-w ord by 4-bits read/write random access memory developedfor high speed systems such as scratch pads and control/buffer storage. Features · · · · · · 16384-w ord x 4-bit organization Fully compatible with 100K EC L level Address access time: W rite pulse width: 10/12 ns (m ax) 6 ns (min) Low power dissipation: 6 5 0 m W (typ) Output obtainable by w ired-O R -
OCR Scan
HM100474 HM100474F

MCB0603G100

Abstract: MCB1206F500 Ltd. â'¢ 2210 O'Toole Ave. â'¢ San Jose, CA 95131 â'¢ (408) 435-8300 HM 10470, HM10 4 7 0 -1 3 , HM 10470, HM10 4 7 0 -1 SUPPLY CURRENT vs. SUPPLY VOLTAGE Supply C u rre n t Iti (n A , ADDRESS ACCESS TIME vs. SUPPLY VOLTAGE Access HM10 TÛ_ Address Tin« tt* (ns
AEM Components
Original
MCB0603G100 MCB1206F500 1608 package MCB0402G221 MCB0805F300 0603g
Showing first 20 results.