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96SDVR-8X-ST-HL-B Advantech Co Ltd HITACHI-LG SLIM 8X SATA DVD+/-RW visit Digikey Buy

HITACHI 2Sk176

Catalog Datasheet MFG & Type PDF Document Tags

2SJ56 2sk176

Abstract: 2SK176 HITACHI 35 5.9 Television and CRT Displays Block Diagram Vertical o Coil Vertical Deflection Coil Horizontal â'¢. Deflection / c , 2SC4914 * : Hitachi's Linear IC HITACHI 5 1.4 S-Series for Power Amplifiers A power MOSFET is , one parameter Hitachi has found difficult to characterise. Table 3 : S-Series Typical Characteristics , 180* ±20 8 125 1 1.7 1 250/230 90/120 800/1200 2/1 2SK176 2SJ56 200* 2SK176 2SJ56(H
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2SJ75 2SK17S 2SJ56 2sk176 2sk1058 2SJ162 2sk133 2Sj48 2sJ50 mosfet HITACHI 2Sk176 2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SD2299

2SK176

Abstract: 2Sk175 HITACHI ' bl E D HHTbEGS 0013011, Ô01 IHIT4 2SK175,2SK176- SILICON N-CHANNEL MOS , 150 2SK176 200 POWER VS. TEMPERATURE DERATING Unit V V A A W °C °C ELECTRICAL CHARACTERISTICS (T,=25 °C) Item Drain-Source Breakdown Voltage 2SK175 2SK176 VlBK IG SS VcBo/n y Symbol Test , MAXIMUM SAFE OPERATION AREA 0013012 7Mfl « H i m HITACHI/(OPTOELE CTR ONICS) TYPICAL OUTPUT , 4Mt ibE05 0013013 bfiH H I T M -2SK175.2SK1 76 SWITCHING TIME TEST CIRCUIT O utp ut HITACHI
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2SJ55 2Sk175 HITACHI 2Sk176 HITACHI HITACHI 2SJ56 HITACHI 2Sk175 Hitachi 2sk176 2sj56 SK175 2SK176--

2SJ56 2sk176

Abstract: 2sJ50 mosfet HITACHI 5 1.4 S-Series for Power Amplifiers A power MOSFET is excellent as an output stage because its high input impedance neatly separates the output current amplification stage from the input voltage gain stage. This simplifies the input voltage gain stage, so low cost components may be used and , Quality" not achievable with other MOSFETs. Unfortunately, this is one parameter Hitachi has found , 90/120 800/1200 2/1 2SK176 2SJ56 200* 2SK176 2SJ56(H) 200 60 200 2SK220 _ 160
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2SK1058 2SK318 transistor 2sj162 2SK1058 MOSFET 2SJ56 HITACHI 2sj56 mosfet hitachi 2SJ49 2sk134 2SK213 2SK214 2SJ77 2SK215 2SJ78 2SK408/409

2SK176

Abstract: 2Sk176 HITACHI LIE D 44cJb2DS GOlBail ñül «HIT4 SILICON N-CHANNEL MOS FET HITACHI/(OPTOELECTRONICS) LOW , MAXIMUM RATINGS (T.=25 °C) 35â'"».IUHI.S Item Symbol Rating Unit 2SK175 2SK176 Drain-Source , 2SK175 /o=10mA, VCJ=-10V 180 â'" â'" V Voltage 2SK176 200 â'" â'" V Gate-Source Breakdown Voltage , Copyrighted By Its Respective Manufacturer blE D 2SK1 75.2SK1 76 44^205 0013012 74a â Him ~~ HITACHI , Material Copyrighted By Its Respective Manufacturer h IE D â  MMIbEDS Q013D13 b64 â HITM HITACHI
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HITACHI 2SK* TO-3 HITACHI 2SJ* TO-3 2sk1 Hitachi Scans-001 100/JA

HITACHI 2SJ56

Abstract: 2SJ56 blE D 4MTbEDS DGlEfi^fl MHIT4 &Z3 2SJ55,2SJ56 SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 HITACHI/(OPTOELECTRONICS) FEATURES · · · · · · · High Power Gain. Excellent Frequency Response. High Speed Switching. Wide Area of Safe Operation. Enhancement-Mode. Good Complementary Characteristics. Equipped with Gate Protection , 44=^205 0012fl, n 725 « H I T 4 2SJ55,2SJ5e TYPICAL OUTPUT CHARACTERISTICS HITACHI
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2Sj55 HITACHI 2sj56, HITACHI 4AUR

2SJ56 2sk176

Abstract: HITACHI 2SJ56 blE D m MMTbEOS 0012ô , ¡012flcitî 725 â  HIT1* HITACHI/(OPTOELECTRONICS) MAXIMUM SAFE OPERATION AREA -5 -Hi -AJ â'"So -UK) Dram to , ADMITTANCE VS. FREQUENCY Frequency / (Hi) 121 blE D 2SJ55.2SJ56 â  441b205 DDISTDG 277 â  HIT4 HITACHI
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DIODE T25 4 lo 30v N channel MOS FET

2SK176

Abstract: 2Sk176 HITACHI 44^205 2SK176 [113014 510 H U M blE D HITACHI/iOPTOELECTRONICS) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER FEATURES · · · · High Speed Switching. High Cutoff Frequency. Enhancement-Mode. Suitable for Switching Regulator, DC-DC Con verter, RF A m p lifiers, and U ltrasonic Pow er Oscillators. 1. Gate 2. Drain 3. Source (Case) (Dim ensions , IHIT4 -2 S K 1 7 6 ® HITACHI/COPTOELECTRONICS) - M A X IM U M SAFE OPERATION AREA TYPICAL
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2SJ56 2sk176

Abstract: HITACHI 2SJ56 blE T> m MMTbEOS â¡Diaô'îfl «HITM HITACHI/(OPTOELECTRONICS) SILICON P-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 â  FEATURES â'¢ High Power Gain. â'¢ Excellent Frequency Response. â'¢ High Speed Switching. â'¢ Wide Area of Safe Operation. â ,   HIT4 HITACHI/(OPTOELECTRONICS) MAXIMUM SAFE OPERATION AREA -lu -¿11 -Si -II« -Jim Drain to Source , 2003 blE D 2SJ55.2SJ56 â  441b205 DDISTDG 277 â  HIT4 HITACHI/(OPTOELECTRONICS) SWITCHING TIME VS
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2sk 725

2Sk176 HITACHI

Abstract: 2SK176 - pF - ns ns - 236 blE B - 44^205 0013015 4S7 I Him -2SK176< HITACHI
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2SK1760 DD13014

2sk135 equivalent

Abstract: 2SK134 equivalent MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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IRF131 IRF143 2sk135 equivalent 2SK134 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 IRF223 2SK134 2SK135 2SK259 IRF323 2SK260

irf 150 equivalent

Abstract: 2sk135 equivalent MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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irf 150 equivalent hitachi 2sk135 irf150 IRF220 equivalent IRF233 IRF331 IRF322 2SJ47 2SJ48 2SJ49 2SJ50 IRF120

2sk135 equivalent

Abstract: 2SK134 equivalent MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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equivalent irf840 IRF121 IRF123 IRF130 IRF132 IRF133 IRF140

irf740 equivalent

Abstract: IRF450 equivalent MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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irf740 equivalent IRF450 equivalent irf340 "cross reference" IRF351 tl 741 IRF240 IRF141 IRF142 IRF151 IRF152 IRF153 IRF220

2SJ48 equivalent

Abstract: IRF441 MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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VN64GA

Abstract: irf150 MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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VN64GA IRF830 equivalent IRF530 IRF532 VNDA12

irf150

Abstract: 2SK176 MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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IRF720 IRF250 IRF320 IRF722 IN4723

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent the d escrip tion s in th e exam ple. (c) Hitachi, Ltd. 1985 0 HITACHI 1 .INTRODUCTION In 1977, HITACHI was the first in the world to develop and massproduce 100 Watt Complementary Power , with high switching speed and high resistance to electrically induced failure. HITACHI Power MOS FET , response. HITACHI has both types to meet various requirements. The Vertical Types are called "D Series , conventional devices are already in use. @ HITACHI 2 .STRUCTURE & FEATURES Hitachi has two types of
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hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent K429 2SK375 2SK535 2SK382 2SK311 2SK580 RE79-24

BUZ24

Abstract: IRF540 MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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BUZ24 IRF540 VN67AF cross reference sony 2sj54 supertex TO-3 to202 pinout

2sk135 equivalent

Abstract: irf250 MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , TO-3 IRF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 2SK220 160 â'" TO-3 â'" â'" â'" 2SK221 200
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IRF133 international rectifier IRF350 VNDA40 VN3500A VN3S00D VN3501A VN3501D VN4000A

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 MODIFICATIONS Magnatec lateral mosfets series are designed to replace Hitachi devices. In most cases the , 8A 125W N 2SK176 BUZ901D TO 3 200V 16A 250W N 2 X 2SK176 BUZ901P T0247 200V 8A 125W N ! i - BUZ9
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BUZ905D BUZ906D HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ900P BUZ901 semelab BS5750 500VV MNT-LB32P16 T1NT-LB32P2
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