HGTP10N40C1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40E1

HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages

HGTP10N40C1 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1 HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC · 10A and 12A, 400V and 500V EMITTER · VCE(ON): 2.5V Max. COLLECTOR · TFI: 1µs, 0.5µs GATE COLLECTOR (FLANGE) · Low On-State Voltage · Fast Switching Speeds · High Input Impedance · No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB · Power Supplies · Motor Drives EMITTER COLLECTOR GATE COLLECTOR (FLANGE) · Protection Circuits Description The HGTH12N40C1 HGTH12N40C1, HGTH12N40E1 HGTH12N40E1, HGTH12N50C1 HGTH12N50C1, HGTH12N50E1 HGTH12N50E1, HGTP10N40C1 HGTP10N40C1, HGTP10N40E1 HGTP10N40E1, HGTP10N50C1 HGTP10N50C1 and HGTP10N50E1 HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTH12N40C1 HGTH12N40C1 TO-218AC G12N40C1 G12N40C1 HGTH12N40E1 HGTH12N40E1 TO-218AC G12N40E1 G12N40E1 HGTH12N50C1 HGTH12N50C1 TO-218AC G12N50C1 G12N50C1 HGTH12N50E1 HGTH12N50E1 TO-218AC G12N50E1 G12N50E1 HGTP10N40C1 HGTP10N40C1 TO-220AB G10N40C1 G10N40C1 HGTP10N40E1 HGTP10N40E1 TO-220AB G10N40E1 G10N40E1 HGTP10N50C1 HGTP10N50C1 TO-220AB G10N50C1 G10N50C1 HGTP10N50E1 HGTP10N50E1 TO-220AB G10N50E1 G10N50E1 G E NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTH12N40C1 HGTH12N40C1 HGTH12N40E1 HGTH12N40E1 HGTH12N50C1 HGTH12N50C1 HGTH12N50E1 HGTH12N50E1 HGTP10N40C1 HGTP10N40C1 HGTP10N40E1 HGTP10N40E1 Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 400 500 V Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.) 400 500 400 500 V 15 15 -5 -5 V Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC ±20 ±20 ±20 ±20 V 12 12 10 10 A Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 17.5 17.5 17.5 17.5 A Power Dissipation at TC = +25oC HGTP10N50C1 HGTP10N50C1 HGTP10N50E1 HGTP10N50E1 UNITS . . . . . . . . . . . . . . . . . . . PD 75 75 60 60 W Power Dissipation Derating Above TC > +25oC . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150 -55 to +150 -55 to +150 -55 to +150 oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 3-15 File Number 1697.3 Specifications HGTP10N40C1 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1 HGTH12N40C1, 40E1, 50C1, 50E1 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH12N40C1 HGTH12N40C1, E1, HGTP10N40C1 HGTP10N40C1, E1 PARAMETERS SYMBOL TEST CONDITIONS HGTH12N50C1 HGTH12N50C1, E1, HGTP10N50C1 HGTP10N50C1, E1 MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 3 (Typ) 2.0 4.5 3 (Typ) V VCE = 400V, TC = +25oC - 250 - - µA VCE = 500V, TC = +25oC - - - 250 µA VCE = 400V, TC = +125oC - 1000 - - µA +125oC - - - 1000 µA Zero Gate Voltage Collector Current ICES VCE = 500V, TC = IGES VGE = ±20V, VCE = 0 - 100 - 100 nA VCE(ON) IC = 10A, VGE = 10V - 2.5 - 2.5 V IC = 17.5A, VGE = 20V - 3.2 - 3.2 V VGEP IC = 5A, VCE = 10V - 6 (Typ) - 6 (Typ) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V - 19 (Typ) - 19 (Typ) nC Turn-On Delay Time tD(ON)I IC = 10A, VCE(CLP) = 300V, L = 50µH, TJ = +100oC, VGE = 10V, RG = 50 - 50 - 50 ns - 50 - 50 ns - 400 - 400 ns 40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns 40C1, 50C1 400 500 400 500 ns Gate-Emitter Leakage Current Collector-Emitter on Voltage Gate-Emitter Plateau Voltage Rise Time tRI Turn-Off Delay Time tD(OFF)I Fall Time tFI Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF IC = 10A, VCE(CLP) = 300V, L = 50µH, TJ = +100oC, VGE = 10V, RG = 50 40E1, 50E1 680 (Typ) µJ 40C1, 50C1 400 (Typ) µJ RJC HGTH, HGTM - 1.67 - 1.67 oC/W HGTP Thermal Resistance Junction-to-Case - 2.083 - 2.083 oC/W HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 3-16 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 HGTP10N40C1 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1 HGTH12N40C1, 40E1, 50C1, 50E1 Typical Performance Curves 20.0 VGE = 10V, RGEN = RGE = 100 RATED POWER DISSIPATION (%) ICE, COLLECTOR CURRENT (A) 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 -75 -50 -25 0 +25 100 80 60 40 20 +50 +75 +100 +125 +150 +175 0 +25 TD , JUNCTION TEMPERATURE (oC) VGE = VCE, IC = 1mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 +50 +100 +100 +125 +150 ZJC(t) = r(t)RJC, D CURVES APPLY FOR POWER PULSE, TRAIN SHOWN READ TIME AT t1, TJ(PEAK) - TC = P(PEAK)ZJC(t) 10 1.0 0.1 D = 0.05 SINGLE PULSE 0.01 0.01 +150 D = 0.2 D = 0.5 0.1 TJ , JUNCTION TEMPERATURE (oC) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1.0 10 t, TIME (ms) 100 1000 FIGURE 4. NORMALIZED THERMAL RESPONSE CHARACTERISTICS TC = +25oC 17.5 17.5 PULSE TEST, VCE = 10V PULSE DURATION = 80µs 15.0 DUTY CYCLE = 0.5% MAX. VGE = 20V ICE, COLLECTOR CURRENT (A) ICE, ON-STATE COLLECTOR CURRENT (A) +75 FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE r(t), EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED) NORMALIZED GATE THRESHOLD VOLTAGE FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50, VGE = 0V ARE THE MIN. ALLOWABLE VALUES -50 +50 TC , CASE TEMPERATURE (oC) 12.5 10.0 7.5 5.0 +25oC -40oC 2.5 15.0 VGE = 8V 10.0 7.5 VGE = 5V 5.0 2.5 2.5 5.0 7.5 10.0 VGE = 4V 0 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS VGE = 6V 12.5 +125oC 0 VGE = 7V VGE = 10V 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 6. TYPICAL SATURATION CHARACTERISTICS 3-17 5 HGTP10N40C1 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1 HGTH12N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) 1200 PULSE TEST, VGE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 15.0 12.5 10.0 o +25 C 7.5 f = 1MHz 1000 C, CAPACITANCE (pF) ICE, COLLECTOR CURRENT (A) 17.5 5.0 800 CISS 600 400 200 2.5 COSS CRSS 0 0 1 2 3 0 4 10 20 30 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE 400 3.00 IC = 10A, VGE = 10V, VCL = 300V L = 50µH, RG = 50 2.75 tD(OFF)I , SWITCHING TIME (ns) VCE(ON), COLLECTOR-EMITTER ON VOLTAGE (V) FIGURE 7. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 50 IC = 10A, VGE = 10V 2.50 IC = 10A, VGE = 15V 2.25 2.00 IC = 5A, VGE = 10V 1.75 IC = 5A, VGE = 15V 1.50 +25 +50 +75 +100 +125 300 200 100 0 +25 +150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. TYPICAL VCE(ON) vs TEMPERATURE +150 FIGURE 10. TYPICAL TURN-OFF DELAY TIME 800 EOFF = IC * VCEdt IC = 5A, VGE = 10V, VCL = 300V L = 50µH, RG = 50 700 IC tFI , SWITCHING TIME (ns) VGE +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) VCE 600 40E1/50E1 40E1/50E1 500 400 40C1/50C1 40C1/50C1 300 200 100 0 +25 +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS FIGURE 12. TYPICAL FALL TIME (IC = 5A) 3-18 +150 HGTP10N40C1 HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1 HGTH12N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) 1000 800 600 40E1/50E1 40E1/50E1 400 40C1/50C1 40C1/50C1 300 200 100 0 +25 +50 +75 +100 +125 TJ, JUNCTION TEMPERATURE 10A, 40E1/50E1 40E1/50E1 800 700 600 10A, 40C1/50C1 40C1/50C1 500 400 5A, 40E1/50E1 40E1/50E1 300 200 5A, 40C1/50C1 40C1/50C1 100 0 +25 +150 +50 +75 +100 FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 10 500 RL = 50 IG(REF) = 0.38mA BVCES VCC = BVCES 375 VGE = 10V 8 GATEEMITTER VOLTAGE 6 VCC = 0.25 BVCES 250 NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. VCE TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION. 125 4 2 COLLECTOR-EMITTER VOLTAGE 0 0 20 IG(REF) IG(ACT) TIME (µs) 80 IG(REF) IG(ACT) FIGURE 15. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT Test Circuit RL = 13 L = 50µH VCC 1/RG = 1/RGEN + 1/RGE RGEN = 100 VCE(CLP) = 300V 20V 0V +125 TJ , JUNCTION TEMPERATURE (oC) (oC) FIGURE 13. TYPICAL FALL TIME (IC = 10A) VCE, COLLECTOR-EMITTER VOLTAGE (V) VGE = 10V, VCL = 300V L = 50µH, RG = 50 VGE, GATE-EMITTER VOLTAGE (V) 500 900 WOFF , TURN-OFF ENERGY LOSS (µJ) tFI , SWITCHING TIME (ns) 700 IC = 10A, VGE = 10V, VCL = 300V L = 50µH, RG = 50 RGE = 100 FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT 3-19 130V +150