HG-8002JA/DC SG-615 SG-531 HG-8002JA HG-8002DC 10-6BV 9357B

HG-8002JA/DC Q3502JAx x x x x x00 Q3402DCxxxxxx00 PLL OE ST JA:SG-615 DC: SG-531 CMOS IC HG-8002JA HG-8002DC

Crystal oscillator HG-8002JA/DC HG-8002JA/DC Q3502JAx x x x x x00 Q3402DCxxxxxx00 PLL OE ST JA:SG-615 SG-615 DC: SG-531 SG-531 CMOS IC HG-8002JA HG-8002JA HG-8002DC HG-8002DC f0 VDD-GND VDD TSTG TOPR f / f0 lOP lOE lST 1 PT/ ST 2 PC/ SC PH/ SH 1.0000 MHz 125.0000 MHz -0.5 V+7.0 V 5.0 V±0.25 V AV±20 × 10-6BV 10-6BV±25 × 10-6, CX±30 × 10-6 28 mA Max. 45 mA Max. 16 mA Max. 30 mA Max. 50 µA Max. VOL N P.33 AV,BV:-20 °C+70 °C, CX:-40 °C+85 °C OE=GND PT,PH,PC ST=GND ST,SH,SC CMOS VDD , / 40 %60 % VDD -0.4 V Min. 40 %60 % VOH "L" 1 T T L 1 CMOS 3.3 V±0.165 V -55 °C+125 °C -20 °C+70 °C-40 °C+85 °C tW / t "H" P.33 TTL 1.4 V, IOH=-16 mA PT/ST,PH/SH,-8 mA PC/SC IOL=16 mA PT/ST,PH/SH, 8 mA PC/SC 0.4 V Max. 2 TTL Max. , 15 pF Max. "H" CL VIH 2.0 V Min. 0.7 × VDD Min. "L" VIL 0.8 V Max. 0.2 × VDD Max. 3 ns Max. 3 ns Max. 10 ms Max. 1 1 tTLH 4 ns Max. 4 ns Max. tTHL OE,ST OE,ST CMOS 20 %80 %VDD TTL 0.4 V2.4 V CMOS 80 %20 %VDD TTL 2.4 V0.4 V t tOSC fa ±2 × 10-6 / Max. V Ta=+25 °C DD=5.0 V/ 3.3 V(PC/SC S.R. ±2 × 10-6 Max. 750 mm × 3 29400 m/s2 × 0.3 ms × 1/2 Sine Wave × 3 1 -40+85 °C 33 2PLL 54 53 mm mm HG-8002JA HG-8002JA HG-8002DC HG-8002DC HG-8002JA HG-8002JA #3 13.7 Max. #8 2 GND 3 OUT 4VDD #1 #2 14.0 Max. 7.62 OE PT,PH,PC OE= "H" "Open"OUT or OE= "L" OUT 1.3 No. 1 OE or ST GND 4 OUT 5 VDD 8 #4 8.8 7.62 0.2 Min. 2.54 Min. 5.3 Max. 0.25 4.7 Max. 4.06 5.08 EPSON AV 100.0000 HPH 9357B 9357B #1 0.25 Min 0.51 #5 3.0 1 OE or ST 6.6 8.65 NO. 9.8 Max. EPSON AV 100.0000 HPH 9357B 9357B ° 90 0.51 #4 5° 10 0.25 7.62 5.08 ST ST,SH,SC ST= "H" "Open"OUT or ST= "L" OUT 62