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HF VHF power amplifier module

Catalog Datasheet MFG & Type PDF Document Tags

uhf vhf booster

Abstract: HF VHF power amplifier module and MATV systems, and as a general purpose amplifier for VHF and UHF applications. PINNING PIN , Semiconductors Product specification Hybrid integrated circuit VHF/UHF OM2070B wideband amplifier , Hybrid integrated circuit VHF/UHF OM2070B wideband amplifier OPERATING CONDITIONS SYMBOL PARAMETER MIN , Semiconductors Product specification Hybrid integrated circuit VHF/UHF OM2070B wideband amplifier PACKAGE , Philips Semiconductors_Product specification Hybrid Integrated circuit OM2070B VHF/UHF
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UCD445 uhf vhf booster HF VHF power amplifier module philips MATV amplifiers UHF AMPLIFIER vHF amplifier DIAGRAM MLA418 MCD444

philips if catv amplifier

Abstract: UCD445 circuit VHF/UHF wideband amplifier DESCRIPTION A three-stage wideband amplifier In hybrid integrated , amplifier in CATV and MATV systems, and as a general purpose amplifier for VHF and UHF applications ,   APX Product specification Hybrid integrated circuit VHF/UHF OM2070B wideband amplifier N AHER , tibSBIBl Hybrid integrated circuit VHF/UHF wideband amplifier CHARACTERISTICS â¡ 03251S b3T â  APX , resistance - 75 - Q Zo characteristic impedance of HF connections - 75 - n G,= ls,l2 transducer gain -
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DD32512 philips if catv amplifier wideband 28 booster-amplifiers LS3T31 QM2070B S3T31 D03E517

HF VHF power amplifier module

Abstract: OM2070B DISCRETE SEMICONDUCTORS DATA SHEET OM2070B Wideband amplifier module Product specification , Semiconductors Product specification Wideband amplifier module OM2070B DESCRIPTION A three-stage , purpose amplifier for VHF and UHF applications. PINNING PIN DESCRIPTION 1 2 common (-) 3 , Product specification Wideband amplifier module OM2070B CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD , Product specification Wideband amplifier module OM2070B LIMITING VALUES In accordance with the
Philips Semiconductors
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SC16
Abstract: Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ Operation across 450MHz to 2500MHz 35dBm P3dB through all band 13dB typical small signal gain GaN HFET RFW2500H10-28 Application â'¢ HF/VHF/UHF Description The RFW2500H10-28 is designed for Wideband Power Amplifier application frequencies from 20 to 2500MHz. This module uses GaN HEMT technology which performs high , specifications may change without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Wideband Power Amplifier RFHIC
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450MH 2500MH
Abstract: PRELIMINARY SLAM-0131 HF/VHF RECEIVER AMPLIFIER â'¢ HIGH DYNAMIC RANGE, « CLASS A, SELF , 13 dB POWER GAIN ±0.5 dB GAIN FLATNESS SELF-BIASED OPERATION INTERNALLY TEMPERATURE COMPENSATED , compensated, push-pull, silicon FE T hybrid circuit module. This device combines a Noise Figure of less than , high IP3 figure make the SLAM -0131 ideal for high dynamic range HF receiver applications. RF PERFORMANCE AT Tc = 25°C (f = 32 MHz, VDS = 20 V) SYMBOL Gp P1dB IP3 UNITS MIN Power Gain -
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L124100
Abstract: Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ Operation across 450MHz to 2500MHz 35dBm P3dB through all band 13dB typical small signal gain GaN HFET RFW2500H10-28 Application â'¢ HF/VHF/UHF Description The RFW2500H10-28 is designed for Wideband Power Amplifier application frequencies from 20 to 2500MHz. This module uses GaN HEMT technology which performs high , specifications may change without notice. ⪠rfsales@rfhic.com ⪠Version 5.3 Wideband Power Amplifier RFHIC
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TOSHIBA 2N3055

Abstract: Transistor 2SA 2SB 2SC 2SD 2.1 A) Transistors EIAJ METHOD (Example) C) TOSHIBA HOUSE No. (Example) 2 SC 1st 780 2nd 3rd ST100Q22 SI 298 2.2 High-frequency power amplifier modules (Example) 1st group , group: Code indicating operating frequency H: HF band; V: VHF band; U: U H F band 4 th g ro u p : 1~2 , indicating power module 2nd g ro u p : Numeral indicating transistor or FET 3 rd g ro u p : Code indicating , class 2.3 Power modules (Example) B) JEDEC METHOD (USA) (Example) 2N3055 C) PRO ELECTRON METHOD
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TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA transistors 2SA pnp vhf transistor BF422 BU208

S-AV15

Abstract: HF VHF power amplifier module S-AV15 220~225MHz BAND . Output Power : Po^ 3 2 W . Minimum Gain : Gp=22.0dB . Efficiency : ïx S45% RF POWER AMPLIFIER MODULE VHF POWER A M PLIFIER MODULE (HAM 25W FM) Unit in mm MAXI M U M RATINGS (Tc=25°C) CHARACTERISTIC DC Supply Voltage DC Supply Voltage RF Input Power ggerating Case , V mW °C PC Weight: 35g ELECTRICAL CHARACTERISTICS (Tc=25°C) CHARACTERISTIC Frequency Output Power Power Gain Total Efficiency Input VSWR SYMBOL frange Po Gp Pi=200mW VCC=12.5V, VC0N=12.5V Zg=Zl=50n TEST
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SAV-15 225MH

LK141

Abstract: amplifier and module design service â'¢ Technical support â'¢ Long-Term (15+ years) production support Gallium Nitride Transistors â'¢ â'¢ â'¢ â'¢ GaN on SiC technology Usable power/gain up to 3GHz Output power up to 120W P3dB CW Operating voltage across 24 - 50Vdc GaN Device General Specifications , RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfetâ'™s Financials â'¢ â'¢ â'¢ â'¢ â'¢ Private corporation
Polyfet RF Devices
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LK141 ISO9000 GP041 GP141 GX141 GX241 GX341
Abstract: Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ RFW5035H40-28 Application Operation across 20MHz to 500MHz 30Watts P1dB typical 35dB typical small signal gain GaN HFET â'¢ HF/VHF/UHF Package : DP-75 Description The RFW5035H40-28 is designed for Wideband Power Amplifier , Wideband Power Amplifier RFW5035H40-28 RFW5035H40-28 Typical Performance @ 25â"ƒ Freqeuncy (MHz , Wideband Power Amplifier RFW5035H40-28 Package Dimensions (Type: DP-75) Pin No. Function 1 RFHIC
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500MH

HF VHF power amplifier module

Abstract: power Junction FET f s = i_ PRELIMINARY HF/VHF R E C E IV ER AM PLIFIER · HIGH DYNAMIC RANGE, · C L A S S A , NOISE FIGURE · PUSH-PULL DEVICE 0.750 · BROADBAND · 13 dB POWER GAIN · ±0.5 dB GAIN FLATNESS · , self-biased, internally temperature compensated, push-pull, silicon FET hybrid circuit module. This device , The low noise figure and the high IP3 figure make the SLAM-0131 ideal for high dynamic range HF , ETERS AND CONDITIONS Power Gain Output Power at 1 dB Compression Two-Tone Third Order Intercept Noise
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power Junction FET MWAVS024
Abstract: -28 Application â'¢ HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz. This module uses GaN HEMT technology which , Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ Operation across 20MHz to 1000MHz , Wideband Power Amplifier RFW1G33H40-28 RFW1G33H40-28 Typical Performance @ 25â"ƒ Frequency (MHz , Wideband Power Amplifier RFW1G33H40-28 Package Dimensions (Type: DP-75) Pin No. Function 1 RFHIC
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1000MH RFW1G33H40
Abstract: -28 Application â'¢ HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz. This module uses GaN HEMT technology which , Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ Operation across 20MHz to 1000MHz , . ⪠rfsales@rfhic.com ⪠Version 5.4 Wideband Power Amplifier RFW1G35H20-28 RFW1G35H20 , ⪠Version 5.4 Wideband Power Amplifier RFW1G35H20-28 Package Dimensions (Type: DP RFHIC
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Abstract: Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ RFW5035H40-28 Application Operation across 20MHz to 500MHz 30Watts P1dB typical 35dB typical small signal gain GaN HFET â'¢ HF/VHF/UHF Package : DP-75 Description The RFW5035H40-28 is designed for Wideband Power Amplifier , Wideband Power Amplifier RFW5035H40-28 RFW5035H40-28 Typical Performance @ 25â"ƒ Freqeuncy (MHz , Wideband Power Amplifier RFW5035H40-28 Package Dimensions (Type: DP-75) Pin No. Function 1 RFHIC
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Abstract: -28 Application â'¢ HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz. This module uses GaN HEMT technology which , Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ Operation across 20MHz to 1000MHz , . ⪠rfsales@rfhic.com ⪠Version 5.4 Wideband Power Amplifier RFW1G35H20-28 RFW1G35H20 , ⪠Version 5.4 Wideband Power Amplifier RFW1G35H20-28 Package Dimensions (Type: DP RFHIC
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Abstract: -28 Application â'¢ HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz. This module uses GaN HEMT technology which , Wideband Power Amplifier Product Features â'¢ â'¢ â'¢ â'¢ Operation across 20MHz to 1000MHz , Wideband Power Amplifier RFW1G33H40-28 RFW1G33H40-28 Typical Performance @ 25â"ƒ Frequency (MHz , Wideband Power Amplifier RFW1G33H40-28 Package Dimensions (Type: DP-75) Pin No. Function 1 RFHIC
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Pallet VHF Power Amplifier

Abstract: RFW2500H10-28 Wideband Power Amplifier RFW2500H10-28 Product Features Application · GaN on SiC Broadband High Power Amplifier · HF/VHF/UHF · 20MHz to 2500MHz Operation Bandwidth · Broadband PA , -34 Description The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other , Version 6.2 Wideband Power Amplifier RFW2500H10-28 Environmental Characteristics No Item , may change without notice. rfsales@rfhic.com Version 6.2 Wideband Power Amplifier
RFHIC
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DP-34 Pallet VHF Power Amplifier 1600MH

transistor 5cw

Abstract: transistor 5cw 61 SB SB SB SB SB SB SB VHF Comment Amplifier Module Amplifier Module Page 9 , August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF , Linear Amplifier Module Wideband Linear Amplifier Module Class AB AB Comment unmatched , unmatched VHF Page 6 Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER , MHL8115 MHL8118 40-1000 40-1000 1 1 17.5 17.5 15 A Wideband Linear Amplifier Module 28
Richardson Electronics
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transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor CDMA2000 D2020UK D2082UK PTF10159 MRF372 BLF861

OM335

Abstract: OM361 booster amplifiers, as preamplifiers in MATV systems and as general purpose amplifiers for VHF and UHF , and load impedance Characteristic impedance of HF connections Frequency range Tamb VB = = , reflection coefficient si, co-ordinates in ohm × 75. Figure 2: Mounting recommendations The module must , _ Characteristic impedance of H.F. connections _ Frequency range , module must be mounted on double-sided printed circuit-board, see the example shown below. Input and
RS Components
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OM335 OM361 soldering-iron 860mhz rf amplifier circuit diagram

OM335

Abstract: 860mhz rf amplifier circuit diagram Issued March 1998 287-0429 Data Pack J Hybrid RF amplifier Data Sheet RS stock number 308-556 Introduction A hybrid thick film RF amplifier designed for use in masthead booster amplifiers, as a pre-amplifier in MATV systems and as general purpose amplifiers for VHF and UHF applications , temperature dc supply voltage Source impedance and load impedance Characteristic impedance of HF , , co-ordinates in ohm ´ 75. Figure 3 Mounting recommendations The module must be mounted on double-sided
RS Components
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308-556
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