HCT801 VN0109 VP0109 - Datasheet Archive

 

MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT

 

HCT801 HCT801 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS VDS = 90V ID(on) N-Channel = 1.9A P-Channel = 0.5A 1.40 ± 0.15 (0.055 ± 0.006) 2 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 1.27 ± 0.13 (0.05 ± 0.005) FEATURES 4.32 ± 0.13 (0.170 ± 0.005) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) · COMPLEMENTARY N-CHANNEL /P-CHANNEL MOSFETS · HERMETIC CERAMIC SURFACE MOUNT PACKAGE · CECC SCREENING OPTIONS · GOLD PLATED CONTACTS LCC2 ­ Ceramic Surface Mount Package · TWO DEVICES SELECTED FOR VDS SWITCHING TIME, AND CAPACITANCE SIMILARITY P-CHANNEL 2 = Gate 1 = Drain 6 = Source N-CHANNEL 3 =Gate 4 = Drain 5 = Source DESCRIPTION The HCT801 HCT801 offers an N-Channel and P-Channel MOS transistor packaged in a hermetic ceramic surface mount package. The two devices are similar in performance to the VN0109 VN0109 N-Channel device and VP0109 VP0109 P-Channel device. ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) Drain-Source Voltage Gate-Source Voltage Drain Current (Limited by Tj max) N-Channel P-Channel PD Power Dissipation @ Tamb = 25°C (Both devices equally driven) PD Power Dissipation @ TPCB = 25°C (Both devices equally driven) TJ , Tstg Operating and Storage Tempererature 90V 20V 2A 0.8A 0.5W Total 1.25W Total(1) -55 to 150°C Note: (1) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/99 HCT801 HCT801 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions N-CHANNEL P-CHANNEL Min. Max. Min. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown ID = 1mA* VGS = 0 VTH Gate Threshold Voltage ID = 1mA* VGS = VDS IGSS Gate-body Leakage VDS = 0 VGS = +20V IDSS Zero Gate Voltae Drain Current VDS = 90V* VGS = 0V ID(on) ON-state Drain Current VDS = 25V* VGS = 5V* 0.5 -0.15 VDS = 25V* VGS = 10V* 1.9 -0.5 ID= 250mA VGS = 5V 5.2 ID= 1A VGS = 10V 3.2 ID= -0.1A VGS = -5V 15 ID= -0.5A VGS = -10V 8 RDS(on) Drain Source On-Resistance High Temperature Drain Source On Forward Transconductance ID= 0.5A* VDS = 25V* Ciss Input Capacitance Coss Common Source Output Capcitance VDS = 90V* VGS = 0 Crss Reverse Transfer Capacitance ton Turn On Time toff Turn Off Time -3.7 V +100 nA 10 -10 2.5 -1.4 ID= -0.5A,VGS=-10V, TA=125°C Gfs RS=RL=50W 0.9 14 250 ID = 1A mA A 150 W W mmho 70 70 35 35 10 f = 1MHz VDD = 25V* V 90 +100 0.75 ID= 1A,VGS = 10V, TA =125°C Resistance 90 10 16 16 17 17 pf ns * Reverse polarity for the P-Channel device 1 Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/99