HCS132MS MIL-STD-1835 CDIP2-T14 CDFP3-F14 HCS132DMSR HCS132KMSR HCS132D/ - Datasheet Archive

 

S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NAND Schmitt Trigger August 1995 Features Pinouts · 3 Micron

 

HCS132MS HCS132MS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NAND Schmitt Trigger August 1995 Features Pinouts · 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 MIL-STD-1835 CDIP2-T14 CDIP2-T14 TOP VIEW · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) A1 1 14 VCC B1 2 13 B4 Y1 3 12 A4 · Cosmic Ray Upset Immunity < 2 x 10 Errors/Gate Day (Typ A2 4 11 Y4 · Latch-Up Free Under Any Conditions B2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 · Dose Rate Survivability: >1 x 1012 RAD (Si)/s 10 · Dose Rate Upset >10 RAD (Si)/s 20ns Pulse -9 · Military Temperature Range: -55oC to +125oC · Significant Power Reduction Compared to LSTTL ICs · DC Operating Voltage Range: 4.5V to 5.5V · Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 MIL-STD-1835 CDFP3-F14 CDFP3-F14 TOP VIEW · Input Current Levels Ii 5µA at VOL, VOH A1 1 14 VCC B1 2 13 B4 The Harris HCS132MS HCS132MS is a Radiation Hardened Quad 2-Input NAND Schmitt Trigger inputs. A high on both inputs forces the output to a Low state. Y1 3 12 A4 A2 4 11 Y4 B2 5 10 B3 The HCS132MS HCS132MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. Y2 6 9 A3 GND 7 8 Y3 Description TRUTH TABLE The HCS132MS HCS132MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). INPUTS OUTPUTS An TEMPERATURE RANGE SCREENING LEVEL HCS132DMSR HCS132DMSR -55oC to +125oC Harris Class S Equivalent HCS132KMSR HCS132KMSR -55oC Harris Class S Equivalent 14 Lead Ceramic Flatpack Sample H H H H L H H 14 Lead SBDIP L L PART NUMBER Yn L Ordering Information Bn H L 14 Lead SBDIP HCS132D/ HCS132D/ Sample to +125oC +25oC PACKAGE NOTE: L = Logic Level Low, H = Logic level High Functional Diagram nA (1, 4, 9, 12) HCS132K/ HCS132K/ Sample +25oC Sample 14 Lead Ceramic Flatpack nY (3, 6, 8, 11) HCS132HMSR HCS132HMSR +25oC Die Die nO DB NA (2, 5, 10, 13) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright © Harris Corporation 1995 1 Spec Number File Number 518750 3061.1 Specifications HCS132MS HCS132MS Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . Unlimited Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Output Voltage High Input Leakage Current Noise Immunity Functional Test 1 +25oC - 10 µA +125oC, -55oC - 200 µA 1 +25oC 4.8 - mA +125oC, -55oC 4.0 - mA 1 +25oC -4.8 - mA 2, 3 +125oC, -55oC -4.0 - mA VCC = 4.5V, VIH = 3.15V, IOL = 50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 3.15V, IOH = -50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 Output Voltage Low UNITS VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V Output Current (Source) MAX VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V Output Current (Sink) MIN 2, 3 Quiescent Current TEMPERATURE 2, 3 PARAMETER GROUP A SUBGROUPS +125oC, -55oC - ±5.0 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) LIMITS NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". Spec Number 2 518750 Specifications HCS132MS HCS132MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS MAX UNITS 9 +25oC 2 20 ns +125oC, -55oC 2 22 ns 9 +25oC 2 18 ns +125oC, -55oC 2 20 ns 9 +25oC 2.00 3.15 V +125oC, -55oC 2.00 3.15 V 9 +25oC 1.35 2.60 V 10, 11 +125oC, -55oC 1.35 2.60 V 9 +25oC 0.10 1.40 V 10, 11 +125oC, -55oC 0.10 1.40 V VCC = 4.5V TPHL Input Switch Points MIN 10, 11 TPLH TEMPERATURE 10, 11 Input to Output SYMBOL GROUP A SUBGROUPS 10, 11 PARAMETER (NOTES 1, 2) CONDITIONS VCC = 4.5V Vt+ VCC = 4.5V Vt- VCC = 4.5V VH VCC = 4.5V LIMITS NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD TTHL TTLH MIN MAX UNITS 1 +25oC - 39 pF +125oC - 48 pF 1 +25oC - 10 pF +125oC - 10 pF 1 +25oC - 15 ns 1 Output Transition Time TEMPERATURE 1 CIN NOTES 1 Input Capacitance CONDITIONS +125oC - 22 ns VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER SYMBOL (NOTES 1, 2) CONDITIONS TEMPERATURE MIN MAX UNITS Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -4.0 - mA Spec Number 3 518750 Specifications HCS132MS HCS132MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL TEMPERATURE MIN MAX UNITS Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50µA +25oC - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50µA +25oC VCC -0.1 - V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 3) +25oC - - - Input to Output TPLH VCC = 4.5V +25oC 2 22 ns TPHL VCC = 4.5V +25oC 2 20 ns Vt+ VCC = 4.5 +25oC 1.70 3.15 V Vt- VCC = 4.5 +25oC 0.90 2.10 V VH VCC = 4.5 +25oC 0.10 1.40 V Input Switch Points NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 3µA IOL/IOH 5 -15% of 0 Hour PARAMETER TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/H Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 MIL-STD-883 may be exercised. Spec Number 4 518750 Specifications HCS132MS HCS132MS TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 14 - - - 1, 2, 4, 5, 9, 10, 12, 13, 14 - - 3, 6, 8, 11 GROUND 14 1, 2, 4, 5, 9, 10, 12, 13 - STATIC BURN-IN I TEST CONDITIONS (Note 1) 3, 6, 8, 11 1, 2, 4, 5, 7, 9, 10, 12, 13 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3, 6, 8, 11 7 DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2) - 7 NOTES: 1. Each pin except VCC and GND will have a resistor of 10K ± 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1K ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 3, 6, 8, 11 7 1, 2, 4, 5, 9, 10, 12, 13, 14 NOTE: Each pin except VCC and GND will have a resistor of 47K ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 5 518750 HCS132MS HCS132MS Harris Space Level Product Flow - `MS' Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% External Visual, Method 2009 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883 MIL-STD-883, Method 5005. 5. Data Package Contents: · Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Harris Part Number, Lot Number, Quantity). · Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. · GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Harris. · X-Ray report and film. Includes penetrometer measurements. · Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). · Lot Serial Number Sheet (Good units serial number and lot number). · Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. · The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 6 518750 HCS132MS HCS132MS AC Timing Diagrams and Load Circuit DUT VIH TEST POINT INPUT VS VIL CL RL TPLH TPHL VOH VS CL = 50pF OUTPUT RL = 500 VOL TTLH VOH TTHL 80% AC VOLTAGE LEVELS 80% GND 4.50 V 2.25 V 0 V GND VH VI V VIL VCC 4.50 VIH VT- UNITS VS VT+ PARAMETER 20% OUTPUT HCS VCC 20% VOL 0 V VCC VO GND HYSTERESIS DEFINITION Spec Number 7 518750 HCS132MS HCS132MS Die Characteristics DIE DIMENSIONS: 90 x 90 mils 2.29 x 2.29mm METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: