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| Abstract: are silicon and germanium. Power diodes are usually constructed using silicon because silicon diodes , Barkhordarian, Alex Q. Huang Overview · Diodes · Schottky Diodes · Thyristors · Power Bipolar Junction , Diodes · Rectifier Circuits · Testing a Power Diode · Protection of Power Diodes Alex Q. Huang , Electronics, Devices, Drivers and Applications, John Wiley, New York, 1987. 1.2 Diodes Sohail Anwar Power diodes play an important role in power electronics circuits. They are mainly used as uncontrolled ... | Original |
101 pages, |
MCT thyristor IGCT thyristor GTO thyristor GTO gate drive unit ABB Main Circuit breaker SCR GTO eto thyristor rct Thyristor schematic thyristor based inverter IGCT thyristor ABB Usha Rectifier GTO triac MOS-Controlled Thyristor datasheet abstract |
| Abstract: in redundant Power Systems Output Rectifiers ¿¿"Freewheeling" Diodes in SMPS Germanium Power Devices , Germanium Power Devices Corp 300 Brickstone Square, Andover, Ma. Phone (508) 475-5982 Fax (508) 470-1512 GERMANIUM POWER DEVICES b3E B â- 3147375 DDDDbDD D3T Germanium Schottky Rectifier Ge/Si Vp comparison 16PD , 6ERHANIUM POIdER DEVICES b3E D â- 3147375 GGOGS^ 51Ã" mCPD G ermanium Power Devices Corp. G600R15 G600R15 Ge High Current Fast Recovery Rectifier Ultra-Low Vp & Thermal Impedance MAXIMUM RATINGS: IF (avg ... | OCR Scan |
2 pages, |
300 WATT smps mcp-d germanium rectifier germanium germanium diodes forward drop 12 v smps 5 amps Germanium Power Devices Germanium Schottky diode G600R15 1000 WATT smps germanium rectifier diode Germanium Power Diodes G600R15 abstract |
| Abstract: Voltage (V) BXY50 BXY50 BXY51 BXY51 BXY52 BXY52 BXY60 BXY60 High power diodes for use as oscillators or negative resistance , Microwave solid state backward diodes book 1 part 8 Type No. Description a> c 3 O _« 1 £ M Q S , ) AEY17 AEY17 Germanium bonded backward diode for use at X band SOD-42 a 1 to 18 -53 120* 300 AEY29 AEY29 AEY29R AEY29R" Germanium bonded backward diode for use at J band DO-37 DO-37 j 12 to 18 -53 50t 300 AEY31 AEY31 AEY31A AEY31A Subminiature germanium bonded backward diode for use up to J band SOD-SO u 1 to 18 1 to 18 -53 -50 120« 60* 300 300 ... | OCR Scan |
1 pages, |
Germanium Power Diodes AEY29 AEY17 impatt SOD-31 CXY11a GUNN CXY21 Gunn Diode e band Gunn Diode AEY17 CXY11C gunn diode oscillator diode gunn SA Gunn Diode AEY17 abstract |
| Abstract: power consumption (1.4W) · Compliant with ITU-T and 10Gbps CDR, Bellcore ITU-T, · Internal low , Gbps · Output squelch function · Only one external capacitor required · Low power consumption (1.2 , , LOS/LOL, advantages refer to tunable from MUX/CMU 9.95 to 10.7 · Low power consumption (1.3 W , Package Power Supply Technology OC-48/ OC-48/ STM-16 STM-16 2.5Gbps P-LQFP48-1 P-LQFP48-1, Bare die 3.0V to 5.0V B6HF Si Bipolar OC-192/ OC-192/ STM-64 STM-64 10Gbps Bare die 3.3V to 5.0V B7HF SiGe Silicon Germanium ... | Original |
2 pages, |
STM-64 STM-256 STM-16 stm 64 laser diode FOA3251B1 PDF PIN APD DIODE DESCRIPTION OC-768 Germanium Power Diodes laser driver, STM-64 silicon diode and germanium APD 10gbps receiver pin diode for 10Gbps tunable lasers diode applications OC-48/ STM-16 OC-48/ abstract |
| Abstract: Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV30 , Germanium Power Devices Corporation E GAV30 GAV30 GAV40 GAV40 GAV100 GAV100 Multiplication Characteristics 10Q"i- O 10 , t^p r ' H sr|- Hl' TO-46 (modified) A/R COATED LENS DETECTOR SURFACE J 1 Germanium Power , ) 2.24 (.088)^ H" 0.5 (.020) JXL â- W 0 3 0.5 jt>12) (.020) 2.0 (.080) 7 Germanium Power Devices has been a manufacturer of power transistors and diodes since 1973 and a manufacturer of infrared ... | OCR Scan |
4 pages, |
Germanium Power Diodes Germanium Power Devices Germanium GAV30 GAV100 Photodiodes Germanium PIN germanium power devices corporation GAV40 GAV30 abstract |
| Abstract: GERMANIUM MICROWAVE MIXER DIODES AAY56 AAY56 AAY56R AAY56R TENTATIVE DATA Coaxial point contact germanium diodes intended for use in pre-tuned centrimetric low noise mixer circuits upto4GHz. The spread of , Mullard I AAY56-Page 2 GERMANIUM MICROWAVE MIXER DIODES AAY56 AAY56 AAY56R AAY56R RATINGS Limiting; values of operation according to the absolute maximum system. Electrioal Maximum available power peak (t = 0.1ms , AAY56R AAY56R ["Pin anode [Body (green spot) cathode ACCESSORIES Holders to fit these coaxial diodes are ... | OCR Scan |
3 pages, |
s-band magnetron AAY56 AAY56R CV7771 germanium rectifier magnetron magnetron S BAND mixer diodes Mullard mullard germanium 197-103 Microwave Mixer Diodes CV7772 SO-26 AAY56 abstract |
| Abstract: 1020) f «äo) Germanium Power Devices has been a manufacturer of power transistors and diodes since , Reverse Current 0.2 0.5 1.0 3.0 mA Forward Current 20 100 100 100 mA Germanium Power Devices Corporation , ) Germanium Power Devices Corporation 3*547375 G0D0LS3 374 9/94 G GAV30 GAV30 GAV60 GAV60 GAV100 GAV100 GAV300 GAV300 Ceramic , accordance with MIL-STD-883 MIL-STD-883, MIL-D- 24620 and/or customer specifications. Germanium Power Devices Corp. 300 , Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium ... | OCR Scan |
4 pages, |
TO46 GAV60 germanium photodiode PIN Germanium Power Devices GAV100 germanium power devices corporation Germanium Power Diodes MIL-45208 GAV300 GAV30 GAV30 abstract |
| Abstract: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors PNP Germanium Alloy Power Transistors Outline drawing No. M Applies. (To-3). REFERENCE TABLE Maximum ratings. Characteristics @ T.mb = 25°C, BVceo BVcbc i BVebo Icm Ptot' hFE (Vce/Ic) VcemiOc/'b) max Icbo (Vcb) Stock Cad* V V V A W , 10 50 30 . 110(1.0/1.0) - - 100 (0.5) 31451X 31451X Miniature Diodes REFERENCE TABLE Maximum ratings. , / 9 NKT Germanium CV Devices stocked by ITT Electronic Services REFERENCE TABLE CV CV Number ... | OCR Scan |
1 pages, |
31426A Germanium Power Devices OC29 OA47 GET103 OC28 NKT Semiconductors OA91 OA47 germanium oc77 OC72 cv7004 CV 7085 OC71 2772SC 2772SC abstract |
| Abstract: Central sentieeniiuctof c@fp. Central semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 1N191 1N191 1N192 1N192 GERMANIUM DIODE JEDEC D0-7 CASE description The CENTRAL SEMICONDUCTOR 1N191 1N191, INI92 INI92 types are point contact germanium diodes in a hermetically sealed glass case, designed for fast switching applications. MAXIMUM RATINGS (Ta=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse , Power Dissipation PD Operating and Storage Junction Temperature Tjs TsTG ELECTRICAL CHARACTERISTICS ... | OCR Scan |
1 pages, |
Germanium Power Diodes germanium diodes 1N192 minmax 1N191 INI92 1N191 abstract |
| Abstract: -IQftQQR^ CENTRAL SEMICONDUCTOR c _92D 00411 D r^^O 7 na^tn â-¡â-¡â-¡â-¡mi â-¡ I 1N273 1N273 1N279 1N279 GERMANIUM DIODE JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N273 1N273 and 1N279 1N279 types are gold bonded germanium diodes mounted in ¿1 hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special , Current Peak Forward Surge Current (1.0s)ft Power Di ssipat ion* Operating and Storage Junction ... | OCR Scan |
1 pages, |
Germanium Power Devices 1N279 1N273 Germanium Power Diodes 1N273 abstract |
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| Diodes Varactors RF Schottkys Signal Diodes Germanium Microsemi is a global supplier of power management, power high reliability and commercial analog integrated circuits and power and signal discrete semiconductors. Power Management ICs/Modules Transient Suppression Products Pentium Power Switchers Power Conditioning Products RF www.datasheetarchive.com/files/microsemi/overview.htm |
Microsemi | 09/12/1999 | 10.88 Kb | HTM | overview.htm |
| 3 Phase Bridge Diode Array Germanium Diode Battery Bypass Module Solar Array Diode Computer Diode High Voltage Rectifier PIN Diode Stabistor Diode www.datasheetarchive.com/files/microsemi/browsepc.htm |
Microsemi | 23/12/1999 | 14.45 Kb | HTM | browsepc.htm |
| Microcontroller Opto Semiconduc Power Semicondu Security + Chip Sensors Silicon Discret Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors BFP 620 NPN Silicon Germanium RF B A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1757.htm |
Infineon | 26/10/2000 | 27.79 Kb | HTM | pro~1757.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0000/fiber.htm |
Maxim | 06/04/2001 | 26.13 Kb | HTM | fiber.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0002/fiber000.htm |
Maxim | 04/04/2001 | 26.21 Kb | HTM | fiber000.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0002/fiber005.htm |
Maxim | 04/04/2001 | 26.2 Kb | HTM | fiber005.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0002/fiber008.htm |
Maxim | 04/04/2001 | 26.21 Kb | HTM | fiber008.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0002/fiber011.htm |
Maxim | 04/04/2001 | 26.2 Kb | HTM | fiber011.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0002/fiber009.htm |
Maxim | 04/04/2001 | 26.2 Kb | HTM | fiber009.htm |
| Interface/Interconnect uP Supervisor Power Supplies Sensor Signal Cond. Switches offering the lowest power at competitive prices with Minimal Power Consumption MORE. New 3.3V, 2.7Gbps Dual 2x2 Crosspoint Switch Simplifies DWDM Protection Switching MORE. Low-Power 3V, 10Gbps 1:16 Demultiplexer MORE www.datasheetarchive.com/files/maxim/0002/fiber014.htm |
Maxim | 04/04/2001 | 26.21 Kb | HTM | fiber014.htm |