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192900-0176 ITT Interconnect Solutions TOOLS,EXTRACTORS,EXTRACTORS,POWER EXTRACTION TOOL, FOR TRIDENT SIGNAL CONTACT,CIRCULAR CONNECTORS,CANNON TRIDENT<SUP>®</SUP> CRIMP AND EXTRACTION TOOLING ,ITT CANNON visit Digikey Buy
CET-C6B-2 ITT Interconnect Solutions TOOLS,EXTRACTORS,EXTRACTORS,CONTACT EXTRACTION TOOL FOR USE WITH COMBINATION D-SUBMINIATURE COAXIAL CONNECTORS,D-SUB CONNECTORS,CANNON EXTRACTION TOOL FOR COAXIAL, HIGH-POWER AND HIGH-VOLTAGE CONTACTS ,ITT CANNON visit Digikey Buy
BFR 740L3RH E6327 Infineon Technologies AG Bipolar Transistors NPN Silicn Germanium RF Transistor visit Digikey Buy
BFP740H6327XTSA1 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, X Band, Silicon Germanium, NPN, ROHS COMPLIANT PACKAGE-4 visit Digikey Buy
BFP640FH6327XTSA1 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, ROHS COMPLIANT, TSFP-4 visit Digikey Buy
SGA-8343Z RF Micro Devices Inc RF Small Signal Bipolar Transistor, 0.072A I(C), 1-Element, C Band, Silicon Germanium, NPN, GREEN PACKAGE-4 visit Digikey Buy

Germanium itt

Catalog Datasheet MFG & Type PDF Document Tags

sx3704

Abstract: BRC157 . . Base Base Base Base Base Base Base D D D D D A A AF7 Germanium PNf , AF5 Germanium PNP AC142 (G rp 5 or 6) Base D AC153 Base D AC128 Base D Germanium D river PNi , S ilicon Diodt BA151 BA147 BA114 1S44 D3 AF25 ME0404/2 GP Germanium Diodi NPN D , Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded
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sx3704 BRC157 Germanium Diode aa143 BRC-116 1n4148 ITT TRANSISTOR BC147 VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

Cv7003

Abstract: Newmarket Transistors 50 , Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors PNP Germanium Alloy Power Transistors Outline drawing No. M Applies. (To-3). REFERENCE TABLE Maximum ratings. Characteristics @ T.mb = 25°C, BVceo BVcbc i BVebo Icm Ptot' hFE (Vce/Ic) VcemiOc/'b) max Icbo (Vcb) Stock Cad* V V V A W (V/A) V (A/A) uA (V) No. NKT 401 60 90 40 10 50 25 . 75 (1.0/1.0)
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GET103 CV7087 Cv7003 Newmarket Transistors cv7042 OC71 cv7004 CV 7085 2772SC 27727X 34768X 31448X 31449R 31451X

varicap diode bb122

Abstract: BB122 ITT Semiconductors Diodes Germanium Gold Bonded Diodesâ'"Type DK For fast switching applications REFERENCE TABLE VRM If VF max. at Ir max. at Outline mA 100mA VRM Stock Drawing Code V mean Pk surge V t»A No. No. DK13 50 120 250 500 1.0 60 1380E 1 DK14 80 120 250 500 1.0 90 1379B 1 DK15 100 120 250 500 1.0 90 1381C I 9 DK19 25 â'" 110 â'" 0.65 at 30m A 160at60°C 1383X r 9 DK20 70 80 100 â'" 0.8 500 1386D 1 DK21 8.0 â'" 30 â'" 1.0 at 30m A 150 1382A J Germanium Gold Bonded
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AA143 BB121B BB122 BB142 varicap diode bb122 Varicap bb122 DIODE AA143 germanium diode itt BB121 14E08E AA144 14609C

TRANSISTOR 3F z

Abstract: OC 44 germanium transistor E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI , Germanium PNP Junction Type TENTATIVE 26* Static Current Amplification (D.C.) *Small Signal Values at Vc=â , . TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS 0.295" Max. 0.285"Min . HH 1 1.2 , XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient
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TRANSISTOR 3F z OC 44 germanium transistor germanium transistor pnp crt 1700 mazda 3 Germanium Amplifier

2N1907

Abstract: 2n1908 TYPES 2NI907, 2N1908 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS HIGH-FREQUENCY POWER , ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise , ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS switching characteristics at 25°C case temperature PARAMETER Id , £- - C o lle c t o r - E m itt e r V o lt a g e - v F IG U R E 2 5: These characteristics were measured using pulse techniques. PW - 300 /¿sec, Duty Cydo < 2%. VCE - C o lle c t o r - E m itt e r V
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2N1907 A97T GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium PW 2N Germanium PNP - Low Power Transistors DC-11

GM10HS

Abstract: S20E GERMANIUM POWER DE V I C E S 20E D 3=147375 D000535 7 V-41-41 Ge PHOTODETECTOR Fig 3-1 , 1400 1800 WAVELENGTH (nm) GERMANIUM POWER D E VI CE S SDE D 3T47375 00G0S3b T FIG , EQUIVALENT CIRCUIT GERMANIUM POWER D E VI CE S EOE D 3 T4 73 7S Q0G0S3fl B BNC (TO-18) DETECTOR , .27 ·THERMISTOR BOTTOM VIEW OUTLINE TO-5 TEC GERMANIUM POÙJER DEVICES HOE D , ( ) CATHODE (+) CASE 18 I I r ITT .68 .018 DIA. LEADS TO-8 OUTLINE TO-5 OUTLINE OUTLINE GM
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GM10HS S20E GM2HS Germanium itt Germanium power GM7HS 019DIA

transistor K52

Abstract: germanium transistor pnp XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element , TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ CHARACTERISTICS (at 25°C.). Small Signal Values (average , I S W A N MAZDA XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL , OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE Mean Total Base Current at Maximum Power Output
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transistor K52 mullard germanium pnp germanium transistor GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard 160 germanium transistor

16C70

Abstract: thermistor inas J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea General J16TE , -Stage Thermoelectrically Cooled Ge J16TE1 Series detectors are Judson's large-area Germanium detectors packaged on , J16TE Thermoelectrically Cooled Germanium Detectors Figure 11-1 J16TE1-P6 Figure 11-2 J16TE2 , , J10D J 16, J12TE 2, J1 2T E 3 J12 J12T E 2 Preamplifiers for use with Germanium Detectors judson , -7:16C and PA-7:32C Multi-channel Pream plifier O utput C onnector ITT C annon D C S F -3 7 S - 2
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16C70 thermistor inas detector inas J16D judson PA-100 100KH 4C-70 16C-70 32C-70 4C-60 16C-60

2N1038

Abstract: 2n2553 , 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s : ss 0B Z p m m m * 4 0 -, 60 , , 2N1041 · 2N2552, 2N2553, 2N2554, 2N2555 · 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM , , 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS electrical characteristics at 25°C case , , 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS electrical characteristics at 25aC case , 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS TYPICAL
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2N1038 2N1040 2n1039 2N1036 ti 2N2553 itt 8012 2N1039 2N2S32 2N25S6 7S222

transistor kc 2026

Abstract: kc 2026 MIL-S-19500/58D 28 Februar 1966 SUPERSEDING MIL-T-195 00/58C 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665 This specification is mandatory for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detailed requirements for a high-power, germanium, PNP, Transistor. 1.2 Physical dimensions. See figure 1 , one C 11 JtL 1 C 70 er r *nn a An â'¢ 4HU in li IUiU/ 11 IP 1 1 . 1 V n V 1 ITT I.I// 1 107 1.17
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transistor kc 2026 kc 2026 MIL-S-19500 MIL-STD-202 MIL-STD-750 STD-750

lN34A

Abstract: Germanium itt SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« (vo lti) Farward Currant < A) m , devices semitron hot line TOLL FREE NUMBER 800-777-3960 T~ germanium diodes c n o t'd tm M , -7 _ _ â'" D O-7 00-7 00-7 germanium rectifiers Maximum Allowable Full Load Voltage Drop , outline drawings ED I T03 I *-.â'¢?# - J MAX.^ .'.«H «!â'" -T itt Jà â I H i d
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lN34A 1N34A 1N38A 1N388 1N128 1N12BA 1N133

TFK 404

Abstract: BCI83L . diffused power Silicon N.P.N. planar power Silicon P.N.P. planar power Germanium P.N.P. power R & , Collector Current Amps Germanium PNP Power These products cover s large number of requirements where , 1 V 0 .2 5 V E m itt e r C u t o ff hFE cb V C u rre n t Ie b o C u rre
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TFK 404 BCI83L T1S58 v744 2N1047A diode germanium tu 38 f 1047B 1048B 1049B 2N2192 2N2192A 2N2193

transistor cross reference

Abstract: MPT3N40 156-0968-02 * ND N N N N N N N N A U NCC K K+ L0+ >1+ M K+ 6E tt RC VENDOR Mostek Mostek Mostek ITT NEC ITT
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transistor cross reference MPT3N40 Westinghouse SCR handbook sje389 LT 8224 ZENER DIODE N9602N

Germanium Diode aa116

Abstract: 20680 JRC '" Cadmium sulfide A â'" Diffused GA â'" Gallium arsenide â'" Gold bonded Ge â'" Germanium t â'" Indium , $ â'" Germanium 5 â'" Symmetrical two-terminal switch 3 â'" Four-terminal switch 6 â , 24524 SYL OHM 1N39 11175 GELC GIC OHM KEM J AN1N2 3WEM,R PHIC HUG GESY ITT TEC MIC NONE SEM ITT GIC KEM 1N58 10879 MOI MIC TEC KEM HUG OHM ERI SYL MOI 1N34A 10495 OHM ITT SEM APX JAN1N21WE 2452E SYL , GIC SYL KEM ERI ITT SESC APX ITT JAN1N21WEM, JAN1N25 24501 GELC KEM SYL CSF KEM R NONE KEM GESY OHM
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Germanium Diode aa116 20680 JRC 1N21 itt zx15 MD1010 ER900

transistor C3866

Abstract: Zener PH CONSTRUCTION N-channel N P-channel P Ge Germanium Silicon Si represent the extreme capabilities of the device , Addresses CODE MANUFACTURER AEG F Fe G IR ITT J L M Mo N P R RCA S Se Sem SGS Sp STC T Tl V Vi u AEG , , Bucks International Rectifier Co. (UK) Ltd, Hurst Green, Oxted, Surrey RH8 9BB ITT Semiconductors , -3 02 02 02 02 02 SGS SGS SGS SGS SGS AEG.Fe.M.Mc.N, 5G5,TI,u AEG,ITTfM,N, Sp,u AEG,ITT,MfN f S,p,u Fe AEG,FefM,Mo, N,SGS,TI AEG,ITT,NfSp,u - - 90 90 90 90 175 - - - 175 175 175 175 175 220 175 6
Semiconductor Common Design Parts Catalog
Original
transistor C3866 Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 E13007 2 010DE

aeg diode Si 61 L

Abstract: SILICONIX U315 silicon and germanium transistors, extending your options even further and allowing Texas Instruments to , 12 P-CHANNEi EPITAXIAL PLANAR GERMANIUM FIELD-EFFECT TRANSISTOR â'¢ â'¢ â'¢ â'¢ SYMMETRICAL , S tS S TYPE TIXM 12 P-CHANNEl EPITAXIAL PLANAR GERMANIUM FIELD-EFFECT TRANSISTOR operating , P-CHANNEL EPITAXIAL PLANAR GERMANIUM FIELD-EFFECT TRANSISTOR SYMMETRICAL P-CHANNEL FIELD-EFFECT , In s t r u m e n t s LIMI TE D TYPE TIXM301 P-CHANNEL EPITAXIAL PLANAR GERMANIUM FIELD-EFFECT
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aeg diode Si 61 L SILICONIX U315 SGS Transistors fdh100 2N339 BC350 A0595 A0605 A0608 A0611 A0613 A0616

TIS59

Abstract: Germanium itt General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance , Thyristors Semiconductor Supply Sources ITT S e m ico n d ucto rs are m arketed in F rance by S ociete des P roduits In d u s trie s ITT D e p a rte m e nt S e m ico n d ucte u rs INTERMETALL Sales O , re Service in Colm ar in G erm any by INTERMETALL H a lb le ite rw e rk der D eutsche ITT Industries GmbH Postfach 840, D-7800 Freiburg T elephone (761) 51 71 Telex 07-72 716 in Ita ly by ITT
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TIS59 2N3575 TIS69 equivalent 2N4856 2N4861 2N486 2N5045 2N5046 2N5047

RCA SK CROSS-REFERENCE

Abstract: CD4003 Germanium Power Transistors Silicon Small-Signal Hermetic Annular Transistors Field-Effect Transistors , DIODES PRV Peak Reverse Voltage V f @ I f = Maximum Forward S = Silicon G = Germanium SE =
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RCA SK CROSS-REFERENCE CD4003 250PA120 pa189 2N2505 2N3017
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