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LM5113TME/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA visit Texas Instruments Buy
LM5113SDX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 visit Texas Instruments Buy
LM5113SDE/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 visit Texas Instruments Buy
LMG1205YFXR Texas Instruments 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA -40 to 125 visit Texas Instruments Buy
LMG1205YFXT Texas Instruments 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA -40 to 125 visit Texas Instruments
LM5113TMX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA visit Texas Instruments

Gan on silicon transistor

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GaN microwave amplifier 100W 28V

Abstract: Gan on silicon transistor manufactured on a gallium nitride (GaN) process. This 0.5µm process supports power densities in excess of 5W , had a small amount of business based on an ldmos silicon process. That supported 28V; this is a migration to 48 or 65V." The first GaN transistor is the RF3931. "It's the first of a new family," Shealy , frequency range in a single amplifier design. The unmatched GaN transistor is packaged in a hermetic , parasitics begin to impact the device's ability to be effective. Our focus has been on optimising GaN for
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GaN microwave amplifier 100W 28V Gan on silicon transistor 4G base station power amplifier GaN amplifier 100W GaN TRANSISTOR DEC08 RFG1M09180

Gan on silicon transistor

Abstract: CDPA21480 backlighting, it has long been a major force in development of wafers and (GaN) Doherty Amplifier AWR Software: Microwave Office® devices for RF and microwave wireless applications based on silicon carbide (SiC) and gallium nitride (GaN). The company's SiC MESFETs and GaN HEMTs are increasingly used in , . Cree has long concentrated on making GaN a viable alternative, and to achieve this must create new , AWR® Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70
Cree
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CGH21240F CDPA21480 Microwave Devices NONLINEAR MODEL LDMOS silicon carbide digital Pre-distortion
Abstract: Mobility Transistors (HEMT) on silicon carbide (SiC) substrates are being driven to high volume by , These two pulse width modulated signals comprise the outphasing inputs to the GaN transistor pair; see , . While digitally pre-distorted silicon LDMOS amplifiers in two-way asymmetric Doherty configurations are , 4G LTE radio base stations. Multi-way Doherty GaN amplifiers, with their superior power density and , . Multi-way Doherty digitally pre-distorted GaN RF PAs light the path in this direction for the next couple NXP Semiconductors
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4G base station power amplifier

Abstract: PAs based on transistors using GaN process technology. Anticipating the demand by wireless network , â'outphasingâ' input to the GaN transistor pair. R_10029 White paper © NXP B.V. 2012. All rights , transmitter applications. A summary comparison of silicon LDMOS and GaN HEMT is shown in Table 1. Table 1. LDMOS and GaN HEMT Silicon LDMOS GaN HEMT epi homogeneous silicon heterogeneous GaN band , temperature 225 ï'°C 250ï' ï'°C Johnsonsâ'™ FoM 1 324 Because the GaN transistor Class-E
NXP Semiconductors
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RF3931

Abstract: GaN TRANSISTOR Most Valuable Product The FirsT in a Family oF VersaTile high Power gan TransisTors R FMD has developed a portfolio of Gallium Nitride (GaN) on Silicon Carbide (SiC) high power amplifiers and , high power density 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor process, these , amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package , RF3931 is a 48 V, 30 W high power discrete transistor that operates in the DC to 3 GHz frequency range
RF Micro Devices
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RFMD HEMT GaN SiC EAR99 Gan on silicon Gan hemt transistor RFMD
Abstract: gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed , MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Features Rev. V1 MAGX-001214-650L00 ï'· GaN on SiC Depletion-Mode Transistor , -001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V1 , ://www.macomtech.com/content/customersupport Rev. V1 MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor M/A-COM
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MAGX-L21214-650L00
Abstract: , failure analysis is preformed on these process-nominal GaN devices. In this paper, we report on one of , AlGaN/GaN heterostructures grown on high resistivity Si (111) substrates by metal organic chemical , layer on the Si substrate [10]. Subsequently, an Al0.26Ga0.74N device layer and thin GaN cap layer are , first example of a failure analysis effort and subsequent reliability improvement on GaN devices , . J.W. Johnson et al, â'12W/mm AlGaN-GaN HFETs on Silicon Substratesâ', IEEE EDL, 25(7), pp. 459-461 -
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ofdm predistortion

Abstract: CGH21120 by the silicon carbide substrates on which they are fabricated. This is of considerable advantage , efficient GaN HEMT microwave transistor for generalpurpose military and industrial applications such as , GaN HEMT transistor based high power amplifiers. MICROWAVE ENGINEERING EUROPE Free subscription , May 2009 Short range wireless (UWB) GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble
Cree
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ofdm predistortion CGH21120 transistors cross reference CGH25120F cgh40120F Digital Transistors Cross Reference CGH40120F
Abstract: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak , '  ï'·ï'  GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source , -001214-500L00 Description The MAGX-001214-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor , -001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 M/A-COM
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GX1214-500L GX1214-500LS

transistor GaN

Abstract: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz , MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power , -000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Absolute , / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W , / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W
M/A-COM
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transistor GaN
Abstract: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 , MAGX-001090-600L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , : 81.44.844.8298 MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak M/A-COM
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MAGX-A11090-600L00 2002/95/EC
Abstract: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 , MAGX-001090-600L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , : 81.44.844.8298 MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak M/A-COM
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MAGX-001090-SB0PPR

MG1007-42

Abstract: MG1020-M16 Contents Diode Products Power Transistor Products Overview: Diode Products 4 About RF & Microwave Power Transistor Products 26-27 PIN Diodes Selection Guide 5 GaN & SiC & SiC Wide , Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined , : Diode Products: Power Transistor Products: Microsemi Corporation Microsemi Corporation
Microsemi
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MG1007-42 MG1020-M16 MSC1075M GC4200 MS4-009-13
Abstract: unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for civilian and , MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10 , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse M/A-COM
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MAGX-000035045000 MAGX-S10035-045000
Abstract: -000035-015000 and MAGX000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors , August 25, 2014 MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC , of high performance RF, microwave, and millimeter wave products, today announced a new GaN on SiC , 's demanding application needs. (Photo: Business Wire) "The new 15 W peak GaN power transistor offers a M/A-COM
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MAGX-000035-015000 ISO9001 ISO14001
Abstract: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs , ) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed , MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev M/A-COM
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MAGX-003135-SB5PPR
Abstract: -000912-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized , MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse , herein without notice. MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak , -000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production , information contained herein without notice. MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor M/A-COM
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Abstract: matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for pulsed L-Band radar , MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse , notice. MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs , notice. MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs , herein without notice. MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak M/A-COM
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Abstract: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak , -001214-500L00 GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband , MAGX-001214-500L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor , -001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse M/A-COM
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MAGX-001214-SB3PPR MAGX-002114-500L00 MAGX-002114-500L0S
Abstract: Typical CW RF Performance The MAGX-001220-100L00 is a gold metalized Gallium Nitride (GaN) on Silicon , MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features ï'· ï'· ï'· ï'· ï'· ï'· ï'· GaN depletion mode HEMT microwave transistor , Information MAGX-001220-100L00 MAGX-001220-1SB1PPR 100W GaN Power Transistor Evaluation Board 1 , ) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor M/A-COM
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MAGX001220-100L00
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