NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| CGY888C,112 | NXP Semiconductors | 34 dB, 870 MHz GaAs push-pull forward amplifier, SOT115J Package, Standard Marking, IC'S Tube - DSC Bulk Pack | 
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| MRFG35010 | Freescale Semiconductor | TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN, FET RF Power |
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| MRFG35010AR5 | Freescale Semiconductor | TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN, FET RF Power |
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| MRFG35020AR1 | Freescale Semiconductor | TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, NI-360, CASE 360E-01, 2 PIN, FET RF Power |
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| MRFG35005MT1 | Freescale Semiconductor | TRANSISTOR S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, PLASTIC, CASE 466-03, PLD-1.5, 4 PIN, FET RF Power |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MITSUBISHI SEMICONDUCTOR MGF1302 MGF1302 LOW NOISE GaAs FET MITSUBISHI ELECTRIC ... | Original |
6 pages, |
Low Noise Gaas "GaAs FET" gaas fet MGF1302 MGF1302 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFC44V3642 MGFC44V3642 3.6 ~ 4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC ... | Original |
3 pages, |
MGFC44V3642 MGFC44V3642 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFC47A4450 MGFC47A4450 4.4 ~ 5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC ... | Original |
5 pages, |
MGFC47A4450 MGFC47A4450 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFK25V4045 MGFK25V4045 14.0 ~ 14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC ... | Original |
3 pages, |
MGFK25V4045 MGFK25V4045 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFC45V4450A MGFC45V4450A 4.4 ~ 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC ... | Original |
3 pages, |
MGFC45V4450A MGFC45V4450A abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFK33V4045 MGFK33V4045 14.0 ~ 14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC ... | Original |
4 pages, |
MGFK33V4045 MGFK33V4045 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MGF2430A MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC ... | Original |
3 pages, |
MGF2430A gaAs FET MGF2430 MGF2430A abstract |
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| Abstract: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFC38V5964 MGFC38V5964 5.9 ~ 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC ... | Original |
3 pages, |
MGFC38V5964 MGFC38V MGFC38V5964 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFC42V6472 MGFC42V6472 6.4 ~ 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 ... | Original |
3 pages, |
MGFC42V6472 MGFC42V6472 abstract |
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| Abstract: MITSUBISHI SEMICONDUCTOR MGFC40V7177 MGFC40V7177 7.1 ~ 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 ... | Original |
3 pages, |
MGFC40V7177 GaAs FET MGFC40V7177 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| GaAs FETs GaAs FETs A 15GHz GaAs-FET Buffered Oscillator (DRO) 28 K For any correspondence regarding Siemens products featured on this page, please contact us. To open the PDF files please read. Copyright © 1998 Siemens Aktiengesellschaft www.datasheetarchive.com/files/infineon/products/35/35app6r.htm |
Infineon | 26/11/1998 | 1.15 Kb | HTM | 35app6r.htm |
| GaAS FET Power Amplifier Hybrid Power Amplifiers Hybrid Power Amplifiers - 1.8 GHz - (PCN) MHW9014 MHW9014 MHW9014 MHW9014 1710-1785 MHz 2.0 W P out 0 dB P in 6.0 V Supply Voltage Personal Communications Network (PCN) Digital 1 W Hand-held Radio GaAS FET Technology New Biasing and Control Techniques Providing Dynamic Range and Control Circuit Bandwidth Ideal for PCN Low Current Control 50 Ohm Input/Output Impedances Guaranteed Stability and Ruggedness This site requires Adobe Acrobat Reader www.datasheetarchive.com/files/motorola/design-n/rf/hybrid2.htm |
Motorola | 25/11/1996 | 2.84 Kb | HTM | hybrid2.htm |
| Retrieval by Parameters - GaAs FETs, HEMTs RF Devices Discrete Semiconductors Retrieval - Main Menu © 1997 Siemens Aktiengesellschaft www.datasheetarchive.com/files/siemens/retrsrch/indx325.htm |
Siemens | 20/11/1997 | 1.04 Kb | HTM | indx325.htm |
| Retrieval by Parameters - GaAs FETs, HEMTs P max [mW] no restriction =500 and 2000 I_D-max [mA] no restriction =500 and 2000 Package no restriction SOT-223 www.datasheetarchive.com/files/infineon/retrsrch/indx325.htm |
Infineon | 03/11/1998 | 2.45 Kb | HTM | indx325.htm |
| Infineon Technologies AG - Products - GaAs Power FETs GaAs Power FETs CLY 10 GaAs FET power amplifier for mobile CLY 15 GaAs FET power amplifier for mobile CLY 2 GaAs FET power amplifier for mobile www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~2419.htm |
Infineon | 26/10/2000 | 23.78 Kb | HTM | pro~2419.htm |
| Infineon Technologies AG - Products - GaAs Power FETs GaAs Power FETs CLY 10 GaAs FET power amplifier for mobile CLY 15 GaAs FET power amplifier for mobile CLY 2 GaAs FET power amplifier for mobile www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1930.htm |
Infineon | 26/10/2000 | 23.66 Kb | HTM | pro~1930.htm |
| CF 739 N-channel dual gate GaAs MES FET CFY 35-20 GaAs FET for low-noise front end CFY 30 Low noise high gain GaAs FET CFY 35-23 GaAs FET for low-noise front end Infineon Technologies AG - Products - GaAs LN Transistors www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1590.htm |
Infineon | 26/10/2000 | 29.81 Kb | HTM | pro~1590.htm |
| - NE1280100 NE1280100 NE1280100 NE1280100 K-Band Medium,Power Amp.,Power GaAs FET 5 60 18700 Chip - NE1280200 NE1280200 NE1280200 NE1280200 K-Band Medium,Power Amp.,Power GaAs FET 5 120 18700 Chip - NE1280400 NE1280400 NE1280400 NE1280400 K-Band Medium,Power Amp.,Power GaAs FET 5 240 18700 Chip - NE23383B NE23383B NE23383B NE23383B High -3000 18 - NE6500379A NE6500379A NE6500379A NE6500379A L,S-Band,Power Amp.,Power GaAs FET 6 500 800-2500 79A - NE6500496 NE6500496 NE6500496 NE6500496 L,S-Band,Power Amp.,Power GaAs FET 10 up to 400 2300 96 - NE www.datasheetarchive.com/files/nec/search/discrete.html |
NEC | 17/11/1999 | 104.92 Kb | HTML | discrete.html |
| GaAs FETs / HEMTs Type Features PDF Size Status CF 739 N-channel dual-gate GaAs MES FET. Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners. Low noise. High gain. Low input capacitance. 144 K 04.96 CF 750 Biased Dual Gate GaAs FET. For frequencies from 400 MHz to 3 GHz. Mixer and amplifier applications in handheld equipment www.datasheetarchive.com/files/siemens/products/35/3516.htm |
Siemens | 26/02/1998 | 6 Kb | HTM | 3516.htm |
| GaAs FETs / HEMTs Type Features PDF Size Status CF 739 N-channel dual-gate GaAs MES FET. Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners. Low noise. High gain. Low input capacitance. 144 K 04.96 CF 750 Biased Dual Gate GaAs FET. For frequencies from 400 MHz to 3 GHz. Mixer and amplifier applications in handheld equipment. Low power www.datasheetarchive.com/files/infineon/products/35/3516.htm |
Infineon | 26/11/1998 | 6.11 Kb | HTM | 3516.htm |