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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

GaAs FET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: X13769XJ2V0CD00 11-18 RF and Microwave Devices Discrete s Low Noise GaAs/HJ FET (NE) (1/2) Supply , NE32900 NE34018 NE38018 NE72118 Applications General Purpose GaAs FET General Purpose GaAs FET General Purpose GaAs FET General Purpose GaAs FET General Purpose HJ-FET General Purpose HJ-FET General Purpose , Comm. HJ-FET BS Converter OSC Stage GaAs FET BS Converter OSC Stage GaAs FET BS Converter OSC Stage GaAs FET BS Converter GaAs FET BS Converter GaAs FET BS Converter GaAs FET BS Converter GaAs FET BS NEC
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nf025 NE27283 upc27 x-band power transistor 100W 2SK2396 NE42484 950MH 500MH PC8119T PC8120T PC8130TA PC8131TA
Abstract: FETNE1/2 (V) NE674 GaAs FET 3 (mA) 10 (MHz) 400012000 NF = 1.4 dB, Ga = 10 dB@f = 12 GHz NE71300 NE71383B NE76118 NE23383B GaAs FET GaAs FET GaAs FET HJFET 3 3 3 2 10 10 10 10 12000 12000 , dB@f = 2 GHz NE72118 GaAs FET BS 3 30 400012000 Gs = 5.5 dB, Po(1 dB) = 13.5 dBm@f = 12 GHz NE721S01 GaAs FET BS 3 30 12000 Gs = 7 dB S01 NE72218 GaAs , NE76038 NE76083A NE76084 NE76184A GaAs FET GaAs FET GaAs FET GaAs FET GaAs FET BS BS BS BS BS NEC
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PC2763 pc1658 2SC3357 2SC3545 IC vco 900 1800 mhz Ne05 PG175TA PC2723T PC3206GR PC3211GR PC8101GR PC8104GR
Abstract: AÃcsm M an AMP company Application Note Drivers for GaAs FET MMIC Switches and Digital , Specific Integrated Circuit (ASIC) that drives GaAs Field Effect Transistor (FET) based switches or digital , switch the GaAs MMIC device to the on and off states. As described earlier, switching in a GaAs FET MMIC , GaAs FET MMIC Switches and Digital Attenuators M539 This effect can he minimized by increasing the , , is adjustable from -5 V to -8 V and appears directly at the gate of the GaAs FET. The second impact -
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SWD-119 SWD-109 SW-338 MACOM MMIC RF AMP DC bias of gaas FET SW-109
Abstract: MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES · Low voltage · High gain · High efficiency · High power 3.5V 22.5B 50 , Nov. '97 MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01219A GaAs FET HYBRID IC , (dBm) Pin(dBm) Nov. '97 MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01219A GaAs FET HYBRID IC , (GaAs FET) FA01219A GaAs FET HYBRID IC EQUIVALENT CIRCUIT 1ST GATE 2ND GATE 1ST DRAIN 2ND -
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9085 d ic fet 547 9415 fet 547 MA644 ACP50 ACP100
Abstract: MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR LOW NOISE DEVICES , '" 1.2dB MGF4918E â'¢ NF MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR , MGFC36V4450A MGFC42V4450 MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER , MGF2407A MGF2430A MGFC36V5964A MGFC42V5964 L>.->->-[> >- - 42dBm MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER DEVICES) 7.7 ~ 8.5GHz -
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MGF4714AP MGF4914D MGF1923 MGF1402B MGF4919 MGF2430 block diagram of power factor meter MGF4919E MGF4914E MGF49T4D
Abstract: MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET , ELECTRIC (1/4) MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET , ELECTRIC (2 /4 ) MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs , 18. 1 -23.5 -28,0 MITSUBISHI ELECTRIC (3 / 4 ) MITSUBISHI SEMICONDUCTOR MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET E Q U IV A L E N T C I R C U I T S = 10V , I o = 3 0 0 m -
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L to Ku band amplifiers FC2400
Abstract: feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , , communications and applied microwave systems, the GaAs FET has become an indispensable item. 1. THE FIELD , new device, known as the Gallium Arsenide Metal Semiconductor FET (GaAs MESFET) showed performance , appearance of the contemporary GaAs FET contributed greatly to developing and commercializing the GUNN diode , made the commercialization of FETs possible. The GaAs FET is what is generally referred to as a California Eastern Laboratories
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NE800898-7H NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph AN82901-1 NE868898-6 MW77-21 MTT-22 ED-21
Abstract: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , notice. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage , 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Mitsubishi
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MITSUBISHI example s band
Abstract: MITSUBISHI SEMICONDUCTOR MGF0904A L, S BAND POWER GaAs FET DESCRIPTION The MGF0904A. GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES â'¢ High output power P0 = 28dBm (TYP.) @f = 1.65GHz, Pjn = 15dBm â'¢ High power gain GP = 13.0dB , MGF0904A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS 800 700 I 600 o H 500 z , MGF0904A L, S BAND POWER GaAs FET + ¡10 â'" ¡50 -90" S PARAMETERS (Ta=2S"c, vDS=av -
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Band Power GaAs FET
Abstract: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band , =22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET TYPICAL , 35 add 40 20 6 8 10 VDS(V) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90° +j50 +j25 +j10 Mitsubishi
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GF-21
Abstract: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , GaAs FET? . B. Active Layer , . D. FET Elements that Affect Microwave Performance . E. Why a GaAs FET Instead of a , GaAs FET data sheets, advertisements and other technical communications. Some of these terms are , application of a varying electric field. V. VI. VII. 2 GaAs FET: A field effect transistor made Hewlett-Packard
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ATP-1054 high frequency transistor ga as fet bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter 5963-2025E 5966-0779E
Abstract: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j , Power GaAs FET OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition. @ VDS = Fujitsu
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FLU10 fujitsu flu fujitsu gaas fet L-band pae100 FCSI0202M200
Abstract: MITSUBISHI SEMICONDUCTOR MGF1302 LOW NOISE GaAs FET DESCRIPTION The MGF1302 is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and , MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF1302 LOW NOISE GaAs FET TYPICAL , MITSUBISHI SEMICONDUCTOR MGF1302 LOW NOISE GaAs FET + )10 â'" j50 -90° 0.2" S PARAMETERS , MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF1302 LOW NOISE GaAs FET Sn,S22 vs. f. S21fSi2 -
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251C 157MIN
Abstract: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm(typ , The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product , 2003 1 FLU17ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Output Power , POWER & POWER ADDED EFFICIENCY vs. INPUT POWER FLU17ZM L-Band Medium & High Power GaAs FET , FLU17ZM L-Band Medium & High Power GaAs FET OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER @ VDS = 10V Fujitsu
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IM320
Abstract: Application Note M539 Drivers for GaAs FET MMIC Switches and Digital Attenuators Rev. V4 , GaAs FET MMIC occurs when the incident voltages change from 0 V to a level greater than pinch-off , for GaAs FET MMIC Switches and Digital Attenuators Rev. V4 Figure 1. Driver Block Diagram This , appears directly at the gate of the GaAs FET. The second impact occurs in the intermodulation , the GaAs FET acquires a time varying component. Modulation increases the distortion of the GaAs FET M/A-COM
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MADRCC0006 MADRCC0007
Abstract: MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] Outline Drawing , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] S-parameters , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET Mitsubishi
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smd z13 of bt 1696 Z12 SMD GF-50
Abstract: AJÎKOvi GaAs FET MM 1C Broadband Control Products Capability Guide Features DC TO 18 GHz , "GaAs FET MMIC RF & MICROWAVE CONTROL PRODUCTS" catalog. M/A-COM also offers custom MMIC Broadband , TELEX 94-9464 4-3 GaAs FET MMIC Products Capability Guide GaAs MMIC SPST REFLECTIVE SWITCHES , detailed information on GaAs MMIC SPST switches request a copy of the " GaAs FET MMIC RF & MICROWAVE , , request a copy of the " GaAs FET MMIC RF & MICROWAVE CONTROL PRODUCTS" catalog. M/A-COM SEMICONDUCTOR -
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MA4G dca300 GaAs FET chip M202-2000 MA4GM202-T5 MA4GM212-500 DC-12 DC-18 MA4GM301-500 MA4GM301-T5 MA4GM311-500 MA4GM321-500
Abstract: MITSUBISHI SEMICONDUCTOR MGF0905A L, S BAND POWER GaAs FET DESCRIPTION The MGF0905A, GaAs FET with an N-chanriel schottky gate, is designed for use in UHF band amplifiers. FEATURES , SEMICONDUCTOR MGF0905A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS lD vs. Vqs 3.0 2.5 , o z o Q < A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGF0905A L, S BAND POWER GaAs FET S PARAMETERS (Ta = 25'C, vos = 8V, l0=800mA) f (GHz) S 1 s2, S 2 S22 K MSG -
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MGF0905 65GHz
Abstract: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm(typ.) High , is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a , 1 FLU35ZME1 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 25 Total Power , S21 Edition 1.1 Apr. 2012 2 FLU35ZME1 L-Band Medium & High Power GaAs FET S-PARAMETER , GaAs FET OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER @ VDS=10V IDS(DC)=0.6IDSS Pin-Pout @f=1.8GHz Sumitomo Electric
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101S12 1325GH
Abstract: MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed , change without notice. 1 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] Outline Drawing Gate Mark Round Corner (1) 4.20 , PATTERN 2 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & Mitsubishi
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bt 1696 transistor z14 smd transistor z15 smd z14 smd Z25 SMD BT 1610 circuit
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