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EHHD015A0A GE Critical Power Hammerhead series, 48V (18V-75V) 5V 15A 90% visit GE Critical Power
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EHW015A0A41Z GE Critical Power EHW015A0A Series Eighth-Brick Power Module, 36–75Vdc Input; 5.0Vdc Output; 15A Output Current visit GE Critical Power
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KSTW015A0F GE Critical Power Low Power Barracuda, 48V (36V-75V), 3.3V, 15A, 0.91 visit GE Critical Power

GaAs FET 15A

Catalog Datasheet MFG & Type PDF Document Tags

MGFC47B3436B

Abstract: CR10 PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final specification , MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed , : Channel-case MITSUBISHI ELECTRIC (1/4) Spe. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR , . MGFC47B3436B 3.4 - 3.6GHz BAND 50W INTERNALLY MATCHED GaAs FET EVM(@WiMAX) vs . Pout characteristics freq
Mitsubishi
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CR10 GaAs FET 15A GF-60

FLL600IQ-2C

Abstract: FET 748 FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , FLL600IQ-2C L-Band High Power GaAs FET 1 2.0 (0.079) ±0.15 5 2.5 MIN. 4 ±0.2 6.0
Eudyna Devices
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FET 748
Abstract: =12V,Idq=1.5A,Pout=37dBm,Ta=25deg.C WiMAX:64QAM-3/4,Bw=7MHz < C band internally matched power GaAs FET , < C band internally matched power GaAs FET > MGFC47B3436 3.4 â'" 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use , Bandwidth:6MHz *3 :Channel-case 1 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 â , GaAs FET > MGFC47B3436B 3.4 â'" 3.6 GHz BAND / 50W Keep safety first in your circuit designs Mitsubishi
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MGFC47B3436

Abstract: MGFC47B < C band internally matched power GaAs FET > MGFC47B3436 3.4 ­ 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in , Publication Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6 , internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6 GHz BAND / 50W MGFC47B3436B RF TEST FIXTURE Publication Date : Apr., 2011 3 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6
Mitsubishi
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MGFC47B

Fujitsu GaAs FET Amplifier design

Abstract: FLL600IQ-2C FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , GaAs FET 2 0.1 (0.004) 17.4±0.2 (0.685) 4.7 8.0 (0.315) 3 6 4-2.6±0.2
Eudyna Devices
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Fujitsu GaAs FET Amplifier design

FLL600IQ-2C

Abstract: FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , GaAs FET 1 2.0 (0.079) ±0.15 4 5 2.5 MIN. 4-R1.3 (0.051) 17.4 (0.685) 8.0
Fujitsu
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FCSI1199M200

Fujitsu GaAs FET Amplifier

Abstract: FLL600IQ-2C FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , FLL600IQ-2C L-Band High Power GaAs FET 1 2.0 (0.079) ±0.15 4 5 2.5 MIN. 4
Fujitsu
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Fujitsu GaAs FET Amplifier
Abstract: High Power GaAs FET ACP vs. OUTPUT POWER VDS = 12V IDS = 1.5A fo = 2.14GHz W-CDMA Single Signal -5MHz , FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that offers , GaAs FET S-PARAMETERS VDS = 12V, IDS = 750mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 , -2C L-Band High Power GaAs FET Case Style "IQ" 2.0 MIN. (0.079) 1 2 0.1 (0.004) 4-2.6±0.2 Eudyna Devices
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Abstract: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in , internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W MGFK38A3745 TYPICAL , internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W MGFK38A3745 S-parameters , internally matched power GaAs FET > MGFK38A3745 13.75 â'" 14.50 GHz BAND / 6W Keep safety first in Mitsubishi
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F1375

Abstract: 9137 006 208 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­ 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in , band internally matched power GaAs FET > MGFK38A3745 13.75 ­ 14.50 GHz BAND / 6W MGFK38A3745 , =10MHz Publication Date : Apr., 2011 2 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­ , Publication Date : Apr., 2011 3 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­
Mitsubishi
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F1375 9137 006 208

8002 1011 amplifier

Abstract: MITSUBISHI SEMICONDUCTOR MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers , June-'04 MITSUBISHI SEMICONDUCTOR MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET , CORPORATION June-'04 MGFL48V1920 TEST CONDITIONS : f=1.5-2.5GHz,VDS=12V,ID=1.5A S11,S22 Smith Chart Z , -0.5 -1.0 -2.0 0.04 0.05 S PARAMETERS (Ta=25deg.C,VDS=12V,ID=1.5A) S Parameters (TYP.) S11 S21
Mitsubishi
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8002 1011 amplifier
Abstract: HIFET High Voltage GaAs FET AM120MH2-BI-R August 2007 Rev. 2 DESCRIPTION AMCOMâ'™s AM120MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device , : 301-353-8401 â'¢ Email: info@amcomusa.com â'¢ www.amcomusa.com HiFET High Voltage GaAs FET AMCOM , : info@amcomusa.com â'¢ www.amcomusa.com HiFET High Voltage GaAs FET AMCOM Communications, Inc. AM120MH2-BI-R , Voltage GaAs FET AM120MH2-BI-R August 2007 Rev. 2 PACKAGE OUTLINE Top View Bottom View AMCOM Communications
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AM120MH2-BI
Abstract: MGFC47B3538B 3.5 â'" 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use , deg.C/W MGFC42V7177 7.1 - 7.7GHz BAND / 16W EVM , internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W MGFC47B3538B RF TEST FIXTURE , :Teflon t=0.8mm Specific dielectric constant=2.6 UNIT:(mm) Mitsubishi
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MGFC47B3538B

Abstract: MGFC47B MGFC47B3538B 3.5 ­ 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 , internally matched power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W EVM(@WiMAX) vs . Pout , EVM MGFC42V7177 7.1 - 7.7GHz BAND / 16W , 3 MGFC42V7177 7.1 - 7.7GHz BAND / 16W Keep
Mitsubishi
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GaAs FET 15A

Abstract: =12. 7â'"13. 2GHz) 4fS : ffigÃ'ttttftaSKèS GaAs FET. A «MfPo Mìiitintlo atìifo ¡eít»imsi5aap Vds(V) 15 , wMtñt¡nt¡mwa tñMí. 5dBin Cf=14. 0-14. 5GHz) «S : Affi^SÃÃäS GaAs FET. A mirto M&tintio wsíMfifflg&s Vds , â'¢ FLMI 4 1 4-4 C g±ii ®® : SHF wBai^^ifiHfflo ÃÃÃJ35. 5dBm (f=14. 0-14. 5GHz) : GaAs FET. A , '¢ F LM 1 4 1 4-5 g±il ®É : SHF Ititffl. OdBm Cf=14. 0-14. 5GHz) «Ã" : Aiti^«^!? GaAs FET. A rnmfo , ÃÃJ38. 5dBm (f=14. 0-14. 5GHz) fffi : Aifi^flSBSàS GaAs FET. A muffo ¡SfüÃ"«Ã"o mwño mi&mtâo
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s18a

Abstract: 675g MITSUBISHI SEMICONDUCTOR MGFC38V5867 5.8-6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees , MGFC38V5867 5.8 - 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta , Transconductance VDS=3V,ID=1.5A - 2 VGS(off) Pinch-off voltage VDS~3V,ID=15mA - - -4.5 V P1dB Output power at
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s18a 675g

GaAs FET 15A

Abstract: High Power GaAs FET FLL400IK-2C High Voltage - High Power GaAs FET FEATURES High Output Power: P1dB=46.0dBm(Typ , Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in , Voltage - High Power GaAs FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm 2 FLL400IK-2C High Voltage - High Power GaAs FET For further information please , =2.17GHz IDS(DC)=1.5A Pin=35dBm Rth -0.1 -5.0 -0.3 - -0.5 - V V 45.0 P1dB Power
Eudyna Devices
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High Power GaAs FET ED-4701 RM1101

MGFL48V1920

Abstract: MITSUBISHI SEMICONDUCTOR MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - , =1.5-2.5GHz,VDS=12V,ID=1.5A 1.0 2.0 S11 S22 S21,S12 Polar Chart 4.0 3.0 2.0 5.0 0.2 S21 , -1.0 S PARAMETERS (Ta=25deg.C,VDS=12V,ID=1.5A) S Parameters (TYP.) S11 S21 S12 f (GHz) 1.50 , push-pull FET. MITSUBISHI ELECTRIC CORPORATION Mag. 0.837 0.843 0.847 0.852 0.860 0.866 0.873
Mitsubishi
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L 0929

Abstract: 91564 HSXAWAVS Hexawave, Inc. HWL34YRA L-Band Power GaAs FET Description The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. presently offered in low cost ceramic package. It is Outline Dimensions 1.625 ( 0 .065 ) Features · · · · Low Cost GaAs Power FET , HEXAWAVE Hexawave, Inc. HWL34YRA L-Band Power GaAs FET Small Signal Common Source Scattering , Power GaAs FET PAE (% 50 40 25 20 15 lGain 30 20 10 5 10 0 0 12 16
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L 0929 91564 s 0934 IS22I

pj 59

Abstract: MGFC38V5964 MITSUBISHI SEMICONDUCTOR MGFC38V5964 5.9~6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in , Af-IOMHz. * 2 : Channel to case A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGFC38V5964 5.9~6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (ra = 25r) P1dB. GLP VS , - 5.0 A 9m Transconductance Vds = 3V, l0 = 1.5A - 2 - S VGS(ofl) Gate to source cut-off voltage
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pj 59
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