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GTO thyristor datasheet

Catalog Datasheet MFG & Type PDF Document Tags

DISC THYRISTOR

Abstract: EUPEC D1201 . power the Home Products F-Diode News Contact Editorials GTO Diodes . V , Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO , D 281 S D 1101 S Job Offers future GTO Freewheeling Diodes . V DRM = 2500 V 1000 V . , current rating [A] click on part-no. to select datasheet Type Designation Technical Explanation , V 4000 V 4000 V power . the Home Products F-Diode News Contact GTO
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snubber FOR 3PHASE BRIDGE RECTIFIER

Abstract: EUPEC Thyristor . power the Home Products F-Diode News Contact Editorials GTO Diodes . V , Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO , D 281 S D 1101 S Job Offers future GTO Freewheeling Diodes . V DRM = 2500 V 1000 V . , current rating [A] click on part-no. to select datasheet Type Designation Technical Explanation , V 4000 V 4000 V power . the Home Products F-Diode News Contact GTO
Eupec
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GTO thyristor

Abstract: GTO ABB inverse - Intégration monolithique d'un thyristor GTO et d'une diode à roue libre - Economie de place , conducting GTO thyristor with the diode at the rim. Aktiv-Teil eines rückwärtsleitenden GTO-Thyristors mit Diode am Rand. Partie actif d'une GTO thyristor à conduction inverse avec diode incorporé. This , t A BB SEMICONDUCTORS A G 3ÃE 3). Asymmetric Asymmetrische GTO Thyristors GTO Thyristoren QOlböBfi Q000Q36 1 QABB Thyristors GTO asymétriques 1 Free-floating silicon High-dynamic voltage
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OCR Scan
601-25A01 GTO thyristor GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor XXP14 YS570102XXP14 102XXP14 104XXP14 S--20

GTO thyristor Application notes

Abstract: gto Gate Drive circuit 9X-XXXXX Series GUIDANCE FOR SELECTION OF GATE DRIVE UNIT 1. 2. 3. Choose GTO Thyristor , GDU 9X-XXXXX Series GDU 9X-XXXXX Series GTO Gate Drive Units Application Note Replaces March , information. GTO GATE DRIVE UNITS A range of Gate Drive Units (GDU) is available to control Dynex Semiconductor Gate Turn-Off Thyristors (GTO). These units provide the recommended waveforms for reliable , output signal (that indicates the presence of GTO gate to cathode negative voltage) can be specified
Dynex
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AN4571 GTO thyristor Application notes gto Gate Drive circuit HP optocoupler GTO gate drive unit DG306A AN4571-6

DCR370T

Abstract: DCR370T18 GTO & Pulsed Power Thyristor Outlines For detailed dimensions, see Datasheet Outline C CA E G H P , Radiation Hard Products Overview 5 5 Package Outlines IGBT Modules FRD Modules Thyristor & Diode GTO , 15 Thyristor & Diode Outlines For detailed dimensions, see Datasheet Outline A B C D E F G H , high voltage, high current applications. MV soft starts. Crowbars. Thyristor/GTO assemblies , on-state current (thyristor). Maximum repetitive controllable current (GTO). Single cycle surge current
Dynex
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DCR370T DCR370T18 DCR1560F26 DCR1560F DCR650G34 drd2960y40 DS5766-4

GTO 100A 750V

Abstract: GTO gate drive unit DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334 , DS4153 Application note - GDU9X-XXXXX Series GTO gate drive units. GDU90-20721 GTO gate drive unit. GDU90-20722 GTO gate drive unit. DSF8045SK - Snubber diode. DSF21545SV - Antiparallel/freewheel diode , -1 Issue No.4.1 May 2000 TECHNICAL DOCUMENTATION ­ NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet , has been started. Preliminary Information: The product is in design and development. The datasheet
Dynex
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GTO 100A 750V gto 10A dc-dc GTO 100A and 750V Gate Turn-off 100A 750V GTO 100A and 750V GTO 750V 100A

MOS Controlled Thyristor

Abstract: GTO thyristor 5A, 400V the MOS-gated thyristor,[4,5] is different in a fundamental way; it maintains gate control (doesn't , the IGBTs are shown in Figure 1(a) and (b); they are similar to those of an MOS-gated thyristor , off by lowering iA below some "holding" value, as is typical of a thyristor. Device , turn-off time of the gate pulse. The n-p-n-p structure of the IGBTs is similar to that of a thyristor and , on-resistance similar to that of a thyristor, but is capable of maintaining gate control of the anode current
Fairchild Semiconductor
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AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly MOS-Gated Transistors MOS-Gated Thyristor

DG858BW

Abstract: GTO thyristor 4500V 4000A 7.0µs s The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in , turn-on thus minimising reverse current through the GTO. s Low recovered charge for low losses. s , semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 Use of V , r on-state , January 2000 TECHNICAL DOCUMENTATION ­ NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations , started. Preliminary Information: The product is in design and development. The datasheet represents the
Dynex
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DSF21545SV45 GTO thyristor 4500V 4000A AN4506 200a gto preliminary DS4153-3 DS4153-4

DG858DW

Abstract: DG858DW45 DG858DW45 DG858DW45 Gate Turn-Off Thyristor DS4334-5 July 2014 (LN31737) FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 1100A dVD/dt 750V/µs dIT/dt 300A/µs q Double Side Cooling q High Reliability In Service q High Voltage Capability q Fault Protection , GDU9X-XXXXX Series GTO gate drive units. GDU90-20721 GTO gate drive unit. GDU90-20722 GTO gate drive unit , product design is complete and final characterisation for volume production is in progress.The datasheet
Dynex
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DG858DW

DSF21545SV

Abstract: purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy , current through the GTO. s Low recovered charge for low losses. s DSF21545SV is housed in a similar , Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter , product design is complete and final characterisation for volume production is in progress.The datasheet
Dynex
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DS4153- LN31805

GTO 100A 750V

Abstract: AN4506 DGT304RE DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-2.1 February 2002 , AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections , February 2002 TECHNICAL DOCUMENTATION ­ NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet , has been started. Preliminary Information: The product is in design and development. The datasheet
Dynex
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DGT304RE13 GTO 100A 500V

GTO thyristor 1200V 100A

Abstract: DGT305SE DGT305SE Gate Turn-off Thyristor DS5519-2.0 February 2002 FEATURES s s s s s s , semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177 Impoved gate drive for GTO , NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate , product is in design and development. The datasheet represents the product as it is understood but details
Dynex
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GTO thyristor 1200V 100A DGT305SE18
Abstract: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5519-2.0 February 2002 , semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177 Impoved gate drive for GTO , NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate , product is in design and development. The datasheet represents the product as it is understood but details Dynex
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DGT304SE13

Abstract: GTO 100A 750V DGT304SE13 DGT304SE Gate Turn-off Thyristor Replaces January 2000 version, DS4609 , Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate , on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177 TO 12/13 , Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front , datasheet represents the product as it is understood but details may change. Advance Information: The
Dynex
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DS460 DS4609-4

AN-7505

Abstract: SCHEMATIC WITH IGBTS Semiconductor Corporation The maximum operating current is limited by latchup of the parasitic thyristor , shown in Figure 1(b); they are similar to those of an MOS-gated thyristor except for the presence of , Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET , Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development
Fairchild Semiconductor
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AN-7505 SCHEMATIC WITH IGBTS AN75 circuit diagram of thyristor controlled rectifier semiconductor power devices

DSF11060SG

Abstract: DSF11060SG DSF11060SG Fast Recovery Dio DS4548 - J 20 31791) KEY PARAMETERS VRRM 6000V IF(AV) 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS s Snubber Diode For GTO Circuits FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE , Thyristor and diode measurement with a multi-meter AN4853 Use of VTO, rT on-state characteristic , is in progress.The datasheet represents the product as it is now understood but details may change
Dynex
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DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55

DS4217-2

Abstract: ds4217 APPLICATIONS s Snubber Diode For GTO Circuits FEATURES s Double Side Cooling s High Surge Capability s , clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 , January 2000 TECHNICAL DOCUMENTATION ­ NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations , started. Preliminary Information: The product is in design and development. The datasheet represents the , parameters are fixed and the product is available to datasheet specification. This publication is issued to
Dynex
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DS4217-2 ds4217 DSF110

GTO thyristor 4500V 4000A

Abstract: AN4506 Snubber Diode For GTO Applications FEATURES s Double Side Cooling s High Surge Capability s Low , AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement , Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front , datasheet represents the product as it is understood but details may change. Advance Information: The , Annotation: The product parameters are fixed and the product is available to datasheet specification. This
Dynex
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DF685 DS4303-1 DS4303-2

1000A 100V power diode

Abstract: DSF8045SK 3500A Qr 440µC trr 3.07µs s Snubber Diode For GTO Applications FEATURES s Double side cooling , semiconductors Thyristor and diode measurement with a multi-meter AN4839 AN4853 Use of V , r on-state , January 2000 TECHNICAL DOCUMENTATION ­ NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations , started. Preliminary Information: The product is in design and development. The datasheet represents the , parameters are fixed and the product is available to datasheet specification. This publication is issued to
Dynex
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DSF8045SK45 DSF8045SK44 DSF8045SK43 DSF8045SK42 DSF8045SK41 DSF8045SK40 1000A 100V power diode DS4150-5 DS4146-6

AN4506

Abstract: AN4839 4.0µs s Snubber Diode For GTO Applications FEATURES s Double side cooling s High surge , AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement , Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front , datasheet represents the product as it is understood but details may change. Advance Information: The , Annotation: The product parameters are fixed and the product is available to datasheet specification. This
Dynex
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DSF8035SK DSF8035SK35 DS4412-1 DS4412-2
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