500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
HILO_3P_ALL-100A Texas Instruments ALL-100A visit Texas Instruments
100A484S7C Integrated Device Technology Inc SB-28, Tube visit Integrated Device Technology
100A474S7DF Integrated Device Technology Inc CDIP-24, Tube visit Integrated Device Technology
100A484S8Y8 Integrated Device Technology Inc SOJ-28, Reel visit Integrated Device Technology
100A474S5DF Integrated Device Technology Inc CDIP-24, Tube visit Integrated Device Technology
100A474S4Y Integrated Device Technology Inc SOJ-24, Tube visit Integrated Device Technology

GTO 100A 500V

Catalog Datasheet MFG & Type PDF Document Tags

GTO thyristor 4500V 4000A

Abstract: FAST SWITCHING THYRISTOR ST University of Science, Okayama, Japan Abstract: Conventional Gate Turn-Off (GTO) thyristors require , looked upon as a way to reduce the dv/dt limitations of the conventional GTO. The new Gate Commutated , been served by Thyristor based inverters and by GTO based inverters in recent times. Even with the , trade off between on-state losses and blocking voltage. The main complaints about the GTO based , the GTO required. Hard turn off in which all of the main current is commutated to the gate drive
Powerex
Original

TL494 full bridge inverter

Abstract: dc motor speed control tl494 Power HEXFETs are now firmly established at voltage ratings up to 500V. Their main attributes are very , about 2.5V, while a 500V rated device has a voltage drop of about 9V, at rated maximum junction temperature. MOSFETs with voltage ratings above 500V are technically feasible, but voltage drop increases , above 500V. Circuit designers would nonetheless welcome an 800 to 1000V rated device, with the , of ?N6547 Bipolar 2A 2N6547 IRFZ24 O < 10A VCE (SAT) = 2-5V MAX. , (Tj = 100° C) 12A VDS
-
OCR Scan
AN-946B TL494 full bridge inverter dc motor speed control tl494 switching power supply TL494 WELDING IR2N6547 TL494 full bridge Speed control of dc motor using TL494

UFN450

Abstract: UFN451 UFN452 UFN453 V o s 500V 450V 500V 450V RDSton) 0.40 0.4fl o.5n 0.50 Id 13A 13A 12A 12A . . , OV T C = 2 5 °C , ls = 1 2 A ,V G S = OV T j = IS O ^ C .Ip = 13 A , dlp/dt « 100A/#is T j * 1 5 0 °C , Ip « 13A , dlF/dt « 100A/#is Intrinsic turn-on time is negligible. Turn-on speed is substantially , B E S ROAD LEXIN GTO N . MA 02173 · T E L . (617) 861-6540 TWX (710) 326-6509 · T E L E X 95-1064 , EM P ER A T U R E (°C ) UNITRQD E CORPORATION · 5 FO R B E S ROAD LEXIN GTO N , MA 02173 . T E L .
-
OCR Scan
UFN450 UFN451 GTO 100A 500V

toshiba gto

Abstract: SGR3000GXH28 2000A, VD = 500V, dip, / dt = 100A / jus, Tj = 125°C (no snubber circuit) â'" â'" 3300 juC Thermal Resistance (Junction to Fin) Rth (j-f) DC GTO Side â'" â'" 0.016 °c/w Diode Side â'" â'" 0.025 , 1000 2000 3000 TURN-OFF CURRENT ITGq (A) 100 rthÇK) - t Di : Diode part GTO : GTO part (A
-
OCR Scan
SGR3000GXH28 toshiba gto GTO thyristor 4500V 4000A 4500V 900A GTO 10A 500V 100a 1000v GTO

IGBT2

Abstract: hitachi transistor igbt IGBT IGBT 3.10 (100A/d) (500V/d) (10V/d) 3.9 700 Tc25 IC A 600 , ) 3.10 I 2(100A/d) I2(100A/d) I 1(100A/d) up I1(100A/d) (500V/d) (500V/d) (10V/d) 3.14 () I 1(100A/d) I 1(100A/d) I 2(100A/d) up I 2(100A/d) (500V/d) (500V/d , N 1200 E 33 E ABCDE (x100V) (. 17:1,700V 25:2,500V 33:3,300V 45:4,500V 65:6,500V) (. , Ds Cs 0VBUS GTO Cs BUS 3.1 3-2-2 3.2 IGBT 3.3 IGBT
Hitachi Semiconductor
Original
IGBT2 hitachi transistor igbt MBN1200E33E 200a 300v mosfet BT 316 transistor G747 IGBT-HI-00002 UL94VO

toshiba gto

Abstract: GTO 100A 500V IRM â'" 2000A, Và = 500V, diR / dt = 100A / jus, Tj = 125°C(no snubber circuit) â'" â'" 2200 juC , GTO Side â'" â'" 0.016 °C/W Diode Side â'" â'" 0.025 1996-09-02 2/4 TOSHIBA SGR3000GXH26 , t Di : Diode part GTO: GTO part (A) : Anode side (K) : Cathode side (D) : Double sides 30 50 100
-
OCR Scan
300a 1000v thyristor 300a 1500v thyristor gto 100A GTO thyristor 13-120K1A 33-ITGQ

lrm200

Abstract: SGR3000EX Reverse Recovery Charge Qrr lRM=2000A, Vd=500V, diR/dt=100A/|is, Tj=125°C (no snubber circuit) - - 1800 , A Tail Time tfail (Vd=500V) 80 us Commutating Critical Rate of Rise of Off-State Voltage dv/dt , GTO Side - - 0.016 °C/W Diode Side - - 0.025 2/2 TOSHIBA CORPORATION
-
OCR Scan
SGR3000EX26 lrm200 SGR3000EX LRM2000-A GTO 3000A 2500V LS

SGR3000EX26

Abstract: GTO 100A 500V , V d = 500V, 1800 f iC Reverse Recovery Charge Qrr diR / dt - 100A / /us, - Peak Reverse Recovery Current Irr 400 A Tj = 125°C(no snubber circuit) - - 0.016 GTO Side Thermal Resistance (Junction to °C/W , Gate Turn-Off Current 700 - !G0 Cg = 5,«F, Rg = 5n, Tj = 125°C, L g ^ O ^ H Tail Time ( V = 500V) 80
-
OCR Scan

sgr3000gxh26

Abstract: toshiba gto , Tj = 125°C IR M = 2000A , V d = 500V, d iß / dt = 100A / jus, Tj = 125°C (no snubber circuit) DC G TO , « 3g P D ¿ H9 HJ Z Hu *Z g to M -l Di : G-TO: (A) : (K) : (D) : 100 T IM E t (m s A N D s) Diode p a rt GTO p a rt Anode side Cathode side Double sides 300500 : SGR3000GXH26-4* 1996-09-02
-
OCR Scan

FDH44N50

Abstract: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode , Gate to Source Leakage Current Forward Transconductance VDS = 500V TC = 25oC - - 25 , = 44A - 0.900 1.2 V Reverse Recovery Time ISD = 44A, dISD/dt = 100A/µs - 920 1100 ns Reverse Recovered Charge ISD = 44A, dISD/dt = 100A/µs - 14 18 µC trr , GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power
Fairchild Semiconductor
Original

FDH44N50

Abstract: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode , Gate to Source Leakage Current Forward Transconductance VDS = 500V TC = 25oC - - 25 , 0.900 1.2 V Reverse Recovery Time ISD = 44A, dISD /dt = 100A/µs - 920 1100 ns Reverse Recovered Charge ISD = 44A, dISD /dt = 100A/µs - 14 18 µC trr QRR S Notes , E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C
Fairchild Semiconductor
Original

GTO 100A 500V

Abstract: Therm al Resistance (Ju n ctio n to F in ) Ir M -2000A, V ü = 500V, d iR / dt - 100A / f i s, Tj = 125°C (no snubber circu it) DC GTO Side Diode Side - - - - - - - - 1800 400 0.016 , 1000 - - - - - - - 22 24 - V Iju s //S A fiS 700 t-tail (V d = 500V
-
OCR Scan

GTO 100A 500V

Abstract: FDH15N50 FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features , 7.5A VGS(th) 3.4 4.0 V µA VDS = 500V TC = 25oC - - 25 VGS = 0V TC = , ISD = 10A, dISD/dt = 100A/µs - 470 730 ns Reverse Recovered Charge ISD = 10A, dISD/dt = 100A/µs - 5 6.6 µC trr QRR S Notes: 1: Repetitive rating; pulse width , FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE
Fairchild Semiconductor
Original
TO-220 JEDEC

marking 27A DIODE

Abstract: FDH27N50 FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode , IGSS Gate to Source Leakage Current Forward Transconductance VDS = 500V TC =25oC - - , Voltage ISD = 27A - 0.89 1.2 V Reverse Recovery Time ISD = 27A, dISD/dt = 100A/µs - 563 714 ns Reverse Recovered Charge ISD = 27A, dISD/dt = 100A/µs - 9.2 14 , GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power
Fairchild Semiconductor
Original
marking 27A DIODE

FDH15N50

Abstract: GTO 100A 500V FDH15N50 / FDP15N50 August 2002 FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS , 7.5A VDS = VGS, ID = 250µA VDS = 500V VGS = 0V VGS = ±30V TC = 25oC TC = 150oC 500 2.0 0.58 0.33 3.4 , Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 15A, diSD/dt = 100A/µs ISD = 15A, diSD/dt = 100A/µs ©2002 Fairchild Semiconductor Corporation FDH15N50 / FDP15N50 RevC , Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO
Fairchild Semiconductor
Original

SM6G14

Abstract: triac 400v 80a SF80J15 SF80L13 SF80N13 SF80Q13 SF80R13 100A SF100G21 SF100J21 SF100L21 SF100N21 SF100Q21 SF100R21 , 400V 500V 600V 750V 800V 1000V 1.9A 6 tts S6098 2 A 15/« SH2B41 SH2D41 SH2G41 3 A , SF3000GX21 3000A ^ I o 1 i- - H E GATE TURN-OFF THYRISTORS (GTO's) > Peak Off-State Voltage 600 V
-
OCR Scan
SF2D41 SF5B41 SF8D41 S6089 SH5J12U SH16J12U SM6G14 triac 400v 80a GTO 100A 750V S6080b SM16G14 SF0R1B42 SF0R1G42 SF0R3B42 SF0R3D42 SF0R3G42 SF0R3J42

diode 8a 400v

Abstract: IRF840A IRF840A 8A, 500V, 0.850 Ohm, N-Channel SMPS Power MOSFET Applications Features · Switch , V GS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 - 4.0 V VDS = 500V , - 2.0 V trr Reverse Recovery Time ISD = 8A, dISD/dt = 100A/µs - 422 633 ns QRR Reverse Recovered Charge ISD = 8A, dISD/dt = 100A/µs - 2.0 3.0 µC ton , CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board
Fairchild Semiconductor
Original
diode 8a 400v 125 diode diode MARKING A1 Marking 8A n-channel 250V power mosfet n-Channel mosfet 400v

GTO 100A 750V

Abstract: AN4506 s Fault Protection Without Fuses dVD/dt 500V/µs s High Surge Current Capability , mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.9 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.0 A IRGM Reverse gate cathode current , AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections
Dynex
Original
DGT304RE DS5518-2 DGT304RE13

GTO thyristor 1200V 100A

Abstract: DGT305SE DGT305SE Gate Turn-off Thyristor DS5519-2.0 February 2002 FEATURES s s s s s s KEY PARAMETERS ITCM VDRM IT(AV) dVD/dt diT/dt 700A 1800V 240A 500V/µs 500A/µs Double Side Cooling , 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 1200V, IT = , semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177 Impoved gate drive for GTO
Dynex
Original
GTO thyristor 1200V 100A DGT305SE18
Abstract: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5519-2.0 February 2002 FEATURES s s s s s s s KEY PARAMETERS ITCM 700A 1800V 240A 500V/µs 500A/µs Double Side Cooling , . At = VDRM, VRG = 2V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V , semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177 Impoved gate drive for GTO Dynex
Original
Showing first 20 results.