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GT60N321 Datasheet

Part Manufacturer Description PDF Type Ordering
GT60N321 Toshiba N-channel iso-gate bipolar transistor (MOS technology)
ri

6 pages,
171.13 Kb

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GT60N321 Toshiba
ri

6 pages,
292.54 Kb

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GT60N321 Toshiba Discrete IGBTs
ri

16 pages,
527.19 Kb

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GT60N321 Toshiba TRANS IGBT CHIP N-CH 1000V 60A 3(2-21F2C)
ri

6 pages,
192.76 Kb

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GT60N321 Toshiba Silicon N Channel IGBT
ri

6 pages,
296.98 Kb

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GT60N321 Toshiba Discrete IGBTs
ri

15 pages,
572.53 Kb

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GT60N321Q Toshiba TRANS IGBT CHIP N-CH 1000V 60A 3(2-21F2C)
ri

6 pages,
192.76 Kb

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GT60N321(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 1000V 60A 170W TO3P LH
ri

6 pages,
0 Kb

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GT60N321

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2010-01-07 GT60N321 Electrical , ) 4.0 °C/W 2 2010-01-07 GT60N321 IC ­ VCE VCE ­ VGE 100 10 20 V 10 V 15 , 160 Case temperature Tc (°C) 3 2010-01-07 GT60N321 Switching time ­ RG 10 Common ... Toshiba
Original
datasheet

6 pages,
183.22 Kb

TOSHIBA IGBT DATA BOOK GT60N321 GT60N321 circuits TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High , Circuit Collector Gate Emitter 1 2001-06-07 GT60N321 Electrical Characteristics (Ta = 25 , GT60N321 IC ­ VCE VCE ­ VGE 10 10 V 15 V Collector-Emitter Voltage Collector Current IC , (×10 V) GT60N321 10 5 3 1 1 3000 (V) 30 100 300 Collector-Emitter Voltage 4 1000 VCE 3000 (V) 2001-06-07 GT60N321 Rth (t) ­ tw 3 IECF ­ VECF 100 ... Toshiba
Original
datasheet

6 pages,
292.54 Kb

TOSHIBA IGBT DATA BOOK GT60N32 gt60n321 GT60N321 TEXT
datasheet frame
Abstract: GT60N321 NIGBT GT60N321 4 : mm · FRD · · IGBT : tf = 0.25 s , : (//) ( / ) () () : 9.75 g () () TOSHIBA GT60N321 No. JAPAN (: : ) 1 2010-01-07 GT60N321 (Ta = 25°C) IGES VGE = ±25 V, VCE = 0 , ( ) Rth(j-c) 4.0 °C/W 2 2010-01-07 GT60N321 IC ­ VCE VCE ­ VGE 10 20 , °C 1 1 10 10 s* IC IC max ()* ­ RG 20 VCE (V) (×10 V) GT60N321 ... Toshiba
Original
datasheet

6 pages,
256.98 Kb

GT60N32 gt60n321 GT60N321 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , /W 2 2002-01-18 GT60N321 IC ­ VCE VCE ­ VGE 100 10 10 V 15 V , 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT60N321 Switching time ­ , 4 1000 VCE 3000 (V) 2002-01-18 GT60N321 10 Common collector Tc = 25 ... Toshiba
Original
datasheet

6 pages,
171.13 Kb

GT60N321 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , GT60N321 IC ­ VCE VCE ­ VGE 100 10 80 Collector current IC (A) 20 V 10 V 15 , (°C) 2002-01-18 GT60N321 Switching time ­ RG 10 Common emitter RL = 2.5 TC = 25 , GT60N321 10 Common collector Tc = 25°C 2 1 Diode Stage 0 IGBT Stage 10-1 10-2 ... Toshiba
Original
datasheet

6 pages,
296.98 Kb

GT60 gt60n321 GT60N321 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA GT60N321 Gate Lot No , GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Gate Leakage Current Collector Cut-off , GT60N321 IC ­ VCE 100 emitter Tc = 25°C 10 V 15 V 60 VGE = 7 V 10 VCE ­ VGE Common Common VCE (V , temperature Tc (°C) 3 2006-11-01 GT60N321 VCE, VGE ­ QG Collector-emitter voltage VCE (V ... Toshiba
Original
datasheet

6 pages,
221.51 Kb

GT60N321 GT60N32 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2006-11-01 GT60N321 Electrical , ) 4.0 °C/W 2 2006-11-01 GT60N321 IC ­ VCE VCE ­ VGE 100 10 20 V 10 V 15 , 160 Case temperature Tc (°C) 3 2006-11-01 GT60N321 Switching time ­ RG 10 Common ... Toshiba
Original
datasheet

6 pages,
178.66 Kb

gt60n321 GT60 GT60N32 GT60N321 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate , GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ , (j-c) ⎯ ⎯ ⎯ 4.0 °C/W 2 2010-01-07 GT60N321 IC – VCE VCE – VGE , 120 160 Case temperature Tc (°C) 3 2010-01-07 GT60N321 Switching time – RG 10 ... Toshiba
Original
datasheet

6 pages,
656.89 Kb

GT60N321 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , GT60N321 Note 1 Lot No. Gate line under a Lot No. identifies the indication of product Labels , 2013-11-01 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition , Resistance(Diode) Rth(j-c) ⎯ ⎯ ⎯ 4.0 °C/W 2 2013-11-01 GT60N321 IC – VCE , 2013-11-01 GT60N321 Switching time – RG 10 Common emitter RL = 2.5 Ω TC = 25°C 16 ... Toshiba
Original
datasheet

6 pages,
206.02 Kb

GT60N321 TEXT
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2004-07-06 GT60N321 Electrical , ) 4.0 °C/W 2 2004-07-06 GT60N321 IC ­ VCE VCE ­ VGE 100 10 emitter Tc = 25 , (V) 0 40 Case temperature 3 80 Tc 120 160 (°C) 2004-07-06 GT60N321 ... Toshiba
Original
datasheet

6 pages,
192.78 Kb

gt60n321 GT60N321 TEXT
datasheet frame