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GT60N321 Datasheet

Part Manufacturer Description PDF Type Ordering
GT60N321 Toshiba N-channel iso-gate bipolar transistor (MOS technology)
ri

6 pages,
171.13 Kb

Original Buy
datasheet frame
GT60N321 Toshiba
ri

6 pages,
292.54 Kb

Original Buy
datasheet frame
GT60N321 Toshiba Discrete IGBTs
ri

16 pages,
527.19 Kb

Original Buy
datasheet frame
GT60N321 Toshiba TRANS IGBT CHIP N-CH 1000V 60A 3(2-21F2C)
ri

6 pages,
192.76 Kb

Original Buy
datasheet frame
GT60N321 Toshiba Silicon N Channel IGBT
ri

6 pages,
296.98 Kb

Original Buy
datasheet frame
GT60N321 Toshiba Discrete IGBTs
ri

15 pages,
572.53 Kb

Original Buy
datasheet frame
GT60N321Q Toshiba TRANS IGBT CHIP N-CH 1000V 60A 3(2-21F2C)
ri

6 pages,
192.76 Kb

Original Buy
datasheet frame

GT60N321

Catalog Datasheet Results Type PDF Document Tags
Abstract: GT60N321 NIGBT GT60N321 4 : mm · FRD · · IGBT : tf = 0.25 s , : (//) ( / ) () () : 9.75 g () () TOSHIBA GT60N321 No. JAPAN (: : ) 1 2010-01-07 GT60N321 (Ta = 25°C) IGES VGE = ±25 V, VCE = 0 , ( ) Rth(j-c) 4.0 °C/W 2 2010-01-07 GT60N321 IC ­ VCE VCE ­ VGE 10 20 , ) GT60N321 100 s* 1 ms* 10 ms* 100 1000 50 30 10 5 3 1 1 3000 VCE (V ... Original
datasheet

6 pages,
256.98 Kb

GT60N32 gt60n321 GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High , Circuit Collector Gate Emitter 1 2001-06-07 GT60N321 Electrical Characteristics (Ta = , 2001-06-07 GT60N321 IC ­ VCE VCE ­ VGE 10 10 V 15 V Collector-Emitter Voltage Collector , (-10 V) GT60N321 10 5 3 1 1 3000 (V) 30 100 300 Collector-Emitter Voltage 4 1000 VCE 3000 (V) 2001-06-07 GT60N321 Rth (t) ­ tw 3 IECF ­ VECF 100 ... Original
datasheet

6 pages,
292.54 Kb

TOSHIBA IGBT DATA BOOK gt60n321 GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High , contained herein is subject to change without notice. 2000-04-27 1/5 GT60N321 Electrical , ) 4.0 °C/W 2000-04-27 2/5 GT60N321 IC ­ VCE VCE ­ VGE 10 10 V 15 V , (-10 V) GT60N321 3000 10 5 3 1 1 30 100 300 Collector-Emitter Voltage 1000 VCE 3000 (V) 2000-04-27 4/5 GT60N321 Rth (t) ­ tw 3 IECF ­ VECF 100 ... Original
datasheet

5 pages,
264.64 Kb

GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2006-11-01 GT60N321 Electrical , ) 4.0 °C/W 2 2006-11-01 GT60N321 IC ­ VCE VCE ­ VGE 100 10 20 V 10 V 15 , 160 Case temperature Tc (°C) 3 2006-11-01 GT60N321 Switching time ­ RG 10 Common ... Original
datasheet

6 pages,
178.66 Kb

gt60n321 GT60N32 GT60 GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA GT60N321 Gate Lot No. , GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Gate Leakage Current Collector Cut-off , GT60N321 IC ­ VCE 100 emitter Tc = 25°C 10 V 15 V 60 VGE = 7 V 10 VCE ­ VGE Common Common VCE (V , temperature Tc (°C) 3 2006-11-01 GT60N321 VCE, VGE ­ QG Collector-emitter voltage VCE (V ... Original
datasheet

6 pages,
221.51 Kb

GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2004-07-06 GT60N321 Electrical , ) 4.0 °C/W 2 2004-07-06 GT60N321 IC ­ VCE VCE ­ VGE 100 10 emitter Tc = 25°C , (V) 0 40 Case temperature 3 80 Tc 120 160 (°C) 2004-07-06 GT60N321 ... Original
datasheet

6 pages,
192.78 Kb

gt60n321 GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , GT60N321 IC ­ VCE VCE ­ VGE 100 10 80 Collector current IC (A) 20 V 10 V 15 , (°C) 2002-01-18 GT60N321 Switching time ­ RG 10 Common emitter RL = 2.5 TC = 25°C , GT60N321 10 Common collector Tc = 25°C 2 1 Diode Stage 0 IGBT Stage 10-1 10-2 ... Original
datasheet

6 pages,
296.98 Kb

gt60n321 GT60 GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , /W 2 2002-01-18 GT60N321 IC ­ VCE VCE ­ VGE 100 10 10 V 15 V , 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT60N321 Switching time ­ , 4 1000 VCE 3000 (V) 2002-01-18 GT60N321 10 Common collector Tc = 25°C ... Original
datasheet

7 pages,
177.53 Kb

GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , /W 2 2002-01-18 GT60N321 IC ­ VCE VCE ­ VGE 100 10 10 V 15 V , 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT60N321 Switching time ­ , 4 1000 VCE 3000 (V) 2002-01-18 GT60N321 10 Common collector Tc = 25°C ... Original
datasheet

6 pages,
171.13 Kb

GT60N321 GT60N321 abstract
datasheet frame
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2010-01-07 GT60N321 Electrical , ) 4.0 °C/W 2 2010-01-07 GT60N321 IC ­ VCE VCE ­ VGE 100 10 20 V 10 V 15 , 160 Case temperature Tc (°C) 3 2010-01-07 GT60N321 Switching time ­ RG 10 Common ... Original
datasheet

6 pages,
183.22 Kb

TOSHIBA IGBT DATA BOOK GT60N321 GT60N321 circuits GT60N321 abstract
datasheet frame

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FGL35N120FTD FGL35N120FTDTU Buy GT60N321 Buy Toshiba Close IGBT Discrete 1200V, 35A Trench IGBT