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GT60N321 Datasheet

Part Manufacturer Description PDF Type
GT60N321 Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original
GT60N321 Toshiba Original
GT60N321 Toshiba Discrete IGBTs Original
GT60N321 Toshiba TRANS IGBT CHIP N-CH 1000V 60A 3(2-21F2C) Original
GT60N321 Toshiba Silicon N Channel IGBT Original
GT60N321 Toshiba Discrete IGBTs Original
GT60N321Q Toshiba TRANS IGBT CHIP N-CH 1000V 60A 3(2-21F2C) Original
GT60N321(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 1000V 60A 170W TO3P LH Original

GT60N321

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2010-01-07 GT60N321 Electrical , ) 4.0 °C/W 2 2010-01-07 GT60N321 IC ­ VCE VCE ­ VGE 100 10 20 V 10 V 15 , 160 Case temperature Tc (°C) 3 2010-01-07 GT60N321 Switching time ­ RG 10 Common Toshiba
Original
GT60N321 circuits TOSHIBA IGBT DATA BOOK 2-21F2C
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High , Circuit Collector Gate Emitter 1 2001-06-07 GT60N321 Electrical Characteristics (Ta = 25 , GT60N321 IC ­ VCE VCE ­ VGE 10 10 V 15 V Collector-Emitter Voltage Collector Current IC , (×10 V) GT60N321 10 5 3 1 1 3000 (V) 30 100 300 Collector-Emitter Voltage 4 1000 VCE 3000 (V) 2001-06-07 GT60N321 Rth (t) ­ tw 3 IECF ­ VECF 100 Toshiba
Original
GT60N32
Abstract: GT60N321 NIGBT GT60N321 4 : mm · FRD · · IGBT : tf = 0.25 s , : (//) ( / ) () () : 9.75 g () () TOSHIBA GT60N321 No. JAPAN (: : ) 1 2010-01-07 GT60N321 (Ta = 25°C) IGES VGE = ±25 V, VCE = 0 , ( ) Rth(j-c) 4.0 °C/W 2 2010-01-07 GT60N321 IC ­ VCE VCE ­ VGE 10 20 , °C 1 1 10 10 s* IC IC max ()* ­ RG 20 VCE (V) (×10 V) GT60N321 Toshiba
Original
IC601 15AVge V16S
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , /W 2 2002-01-18 GT60N321 IC ­ VCE VCE ­ VGE 100 10 10 V 15 V , 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT60N321 Switching time ­ , 4 1000 VCE 3000 (V) 2002-01-18 GT60N321 10 Common collector Tc = 25 Toshiba
Original
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , GT60N321 IC ­ VCE VCE ­ VGE 100 10 80 Collector current IC (A) 20 V 10 V 15 , (°C) 2002-01-18 GT60N321 Switching time ­ RG 10 Common emitter RL = 2.5 TC = 25 , GT60N321 10 Common collector Tc = 25°C 2 1 Diode Stage 0 IGBT Stage 10-1 10-2 Toshiba
Original
GT60
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA GT60N321 Gate Lot No , GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Gate Leakage Current Collector Cut-off , GT60N321 IC ­ VCE 100 emitter Tc = 25°C 10 V 15 V 60 VGE = 7 V 10 VCE ­ VGE Common Common VCE (V , temperature Tc (°C) 3 2006-11-01 GT60N321 VCE, VGE ­ QG Collector-emitter voltage VCE (V Toshiba
Original
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2006-11-01 GT60N321 Electrical , ) 4.0 °C/W 2 2006-11-01 GT60N321 IC ­ VCE VCE ­ VGE 100 10 20 V 10 V 15 , 160 Case temperature Tc (°C) 3 2006-11-01 GT60N321 Switching time ­ RG 10 Common Toshiba
Original
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate , GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ , (j-c) ⯠⯠⯠4.0 °C/W 2 2010-01-07 GT60N321 IC â'" VCE VCE â'" VGE , 120 160 Case temperature Tc (°C) 3 2010-01-07 GT60N321 Switching time â'" RG 10 Toshiba
Original
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 , GT60N321 Note 1 Lot No. Gate line under a Lot No. identifies the indication of product Labels , 2013-11-01 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition , Resistanceï¼Diode) Rth(j-c) ⯠⯠⯠4.0 °C/W 2 2013-11-01 GT60N321 IC â'" VCE , 2013-11-01 GT60N321 Switching time â'" RG 10 Common emitter RL = 2.5 Ω TC = 25°C 16 Toshiba
Original
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power , Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Lot No. Gate JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2004-07-06 GT60N321 Electrical , ) 4.0 °C/W 2 2004-07-06 GT60N321 IC ­ VCE VCE ­ VGE 100 10 emitter Tc = 25 , (V) 0 40 Case temperature 3 80 Tc 120 160 (°C) 2004-07-06 GT60N321 Toshiba
Original
Abstract: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High , contained herein is subject to change without notice. 2000-04-27 1/5 GT60N321 Electrical , ) 4.0 °C/W 2000-04-27 2/5 GT60N321 IC ­ VCE VCE ­ VGE 10 10 V 15 V , (×10 V) GT60N321 3000 10 5 3 1 1 30 100 300 Collector-Emitter Voltage 1000 VCE 3000 (V) 2000-04-27 4/5 GT60N321 Rth (t) ­ tw 3 IECF ­ VECF 100 Toshiba
Original
961001EAA1
Abstract: 330 GT40Q321 GT40T321 150 GT60N322 GT60N321 GT5G133 GT8G133 GT8G134 GT8G136 , 50 120 150 150 1.9 60 15 0.11 6 GT60N321 60 120 170 150 2.3 , GT60N321 GT60N322 GT80J101B GT80J101B GT10J303 GT10J312 GT10Q101 GT10Q101 ­ ­ GT20J101 GT15J301 Toshiba
Original
GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 900VIGBT GT60M323 GT50N322A GT60M303 GT60M324 BCJ0010G
Abstract: GT50J301 GT60M104 GT60M301 GT60M302 GT60M303 GT40M301 GT40M101 GT60N321 GT40T101 GT40T301 , GT60M303 900 V/60 A 0.4 2.7 15 V/60 A TO-3P (LH) GT60N321 100~120 V 900 V/15 A 1000 , GT60M301 GT60M302 GT60M303 1000 1200 GT60N321 GT10Q301 GT15Q301 *GT10Q311 GT25Q301 -
Original
MG50J2YS50 MG75J2YS50 MG100J2YS50 MG75Q2YS50 MG600Q1US51 MG50Q2YS40 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 IGBT gt20d201 MG800J2YS50A MG300J1US51 MG400J1US51
Abstract: 300 Plasma display panels GT60M303 GT60M323 GT60M324 GT50N322A GT50N324 GT60N322 GT60N321 , 15 0.12 6th generation GT60N321 60 120 170 2.3 60 15 0.25 GT60N322 , GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60N321 GT60N322 GT80J101B GT80J101B Toshiba
Original
gt30g122 gt40j323 gt30g123 GT45f122 Series IGBT GT30J124 gt45f123 BCE0010E BCE0010F
Abstract: 4 Example GT15M321 GT50M322 GT60M303 GT60M323 GT50N322A GT60N322 GT60N321 GT60N323 , GT50N322A 50 120 156 2.2 60 15 0.10 GT60N321 60 120 170 2.3 60 15 , GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60N321 GT80J101B GT60J321 Toshiba
Original
gt35j321 GT45G122 GT45F124 GT50N322 diagram induction cooker BCE0010D S-167
Abstract: 80 100 130 150 GT15M321 GT50M322 GT60M324 GT60N322 GT60N321 GT40Q321 GT40T321 GT5G133 , 150 150 1.9 60 15 0.11 GT60N321 60 120 170 150 2.3 60 15 , 900 GT60M303 60 1000 GT60N321 57 1000 GT60N322 80 600 GT80J101B 80 600 GT80J101B 10 600 Toshiba
Original
gt30g124 GT30F124 Equivalent replacement for GT30F124 GT30F125
Abstract: ) products 5 10 15 20 GT60M302 GT60M303 GT60M323(*) GT60N321 GT40Q321 10 20 30 40 60 100 , GT60N321 I 0.4 2.8 15 V / 60 A TO-3P (LH) 1200 V / 40 A I 0.72(typ.) 3.6 15 V Toshiba
Original
s5j53 S5783F S5783 GT50j101 Electronic IH rice cooker MG30T1AL1 E0010A BCE0010A 3503C-0109
Abstract: GT80J101A 80A Under development (GT60N321 ) GT60M303 GT60M302 GT60M301 GT60M104 60A , 0.4 2.7 15 V / 60 A TO-3P (LH) GT60N321 1000 V / 60 A 0.4 2.8 15 V / 60 A Toshiba
Original
GT50T101 mosfet 500V 50A GT60M102 GT60J101 gt15q101 equivalent GT60M101
Abstract: GT15M321 GT60M303 GT60M323 GT60M322 GT50N321 GT60N322 GT60N321 GT40Q323 GT40Q321 GT40T301 170 , 2.9 15 V / 60 A TO-3P(LH) Thin PT GT60N321 1000 V / 60 A 0.4 2.8 15 V / 60 A Toshiba
Original
GT30F121 GT30G121 GT30G131 GT45F12 GT30*122 MG60M1AL1
Abstract: MG400J1US51 2 US GT15M321 (900 V) 1000 GT60M302 GT60M303 (900 V / 60 A) GT60N321 (60 A) GT25Q301 -
Original
2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent SC-63/64 SC-62 SC-59 2SA1483 2SC3803 2SA1426
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