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Part : GT50N324(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 145 Best Price : $17.8000 Price Each : $17.8000
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GT50N322

Catalog Datasheet MFG & Type PDF Document Tags

IGBT GT30F124

Abstract: IGBT GT30J124 . Block Diagram Example Induction Heating Section IGBT: GT60M324 GT50N322A GT50N324 Heating Coil , 1.0 W GT50N322A Low loss and low noise CMZ×× Series General-Purpose Surge Absorption and , to drive a cooling fan. Block Diagram Example Door-Switch Circuitry IGBT: GT50J322 GT50N322A , GT50J322 GT50N322A GT50N324 TLP350/TLP700/TLP358 CRY×× Series CMZB×× Series CMZ×× Series DF2S××FS
Toshiba
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IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 SCJ0004R SC-43 2SC1815 2SC732TM 2SC1959 2SA1015

transistor bc 245

Abstract: 247Y 4 Example GT15M321 GT50M322 GT60M303 GT60M323 GT50N322A GT60N322 GT60N321 GT60N323 , GT50N322A 50 120 156 2.2 60 15 0.10 GT60N321 60 120 170 2.3 60 15
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transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 2SC2240 2SA970 2SC5853 2SC5854 TPS601A TPS615

*45F122

Abstract: GT30f124 )(V) @IC = 50 A, VGE = 15 V 2.6 High-speed: GT50N322A(1000V) 2.4 Ta = 125°C 2.2 Low-VCE , 430 GT60M303 GT60M323 GT50N322A GT50N324 120 400 GT50J322 GT50J322H GT50J328 30 , °C GT50N321 50 120 156 150 2.5 60 15 0.25 GT50N322A 50 120 156 150
Toshiba
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GT45F122 GT30F123 TPCA*8023 SCJ0004O 2SC6132 2SC982TM 2SC2878 2SC2551 2SA562TM

induction cooker circuit diagram

Abstract: TC7600FNG GT50N322A NIGBT GT50N322A 5 : mm · FRD · · IGBT : tf = 0.10 , () (//) ( /) () () TOSHIBA 50N322A () No. (: : ) 1 2008-01-11 GT50N322A (Ta = 25 , % tf 2 tr toff ton 2008-01-11 GT50N322A IC ­ VCE IC ­ VCE 120 120 Tc , 15 (A) 100 10 20 0 200 (nC) 2008-01-11 GT50N322A ­ RG C ­ VCE 10 , ) 0.5 1.0 4 1.5 2.0 2.5 VF (V) 2008-01-11 GT50N322A rth (j-c) ­
Toshiba
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induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG mosfet induction heater SCE0013D

GT45F122

Abstract: gt30g122 50 A, VGE = 15 V 2.6 High-speed: GT50N322A(1000V) 2.4 Ta = 125°C 2.2 Low-VCE(sat , 300 Plasma display panels GT60M303 GT60M323 GT60M324 GT50N322A GT50N324 GT60N322 GT60N321 , GT50N322A 50 120 156 2.2 60 15 0.10 Fast switching 50 120 150 1.9 60
Toshiba
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gt30f122 GT45f122 Series GT45G122 GT45F124 diagram induction cooker BCE0010D S-167 BCE0010E

GT30F124

Abstract: GT30J124 Ratings GT50N322A Up to 1600 W VCES = 1200 V GT40Q321 IC = 40 A Current resonance
Toshiba
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gt30g124 GT30F124 Equivalent replacement for GT30F124 GT30F125 BCE0010F

GT45F122

Abstract: TK13A60U , VGE = 15 V 2.6 GT50N322A(1000V ) 2.4 Ta = 125°C 2.2 VCE(sat)GT60M303 2.0 Ta = 25 , GT60M303 GT60M323 GT50N322A GT50N324 200 120 300 GT50J322 GT50J322H GT50J328 120 , 150 2.5 60 15 0.25 GT50N322A 50 120 156 150 2.2 60 15 0.10
Toshiba
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TK13A60U 2SK4207 IGBT GT30F123 2SC5471 TPCP8R01 2SC1627 2SA817 2SC2120 2SA950 2SC3266 2SA1296

50N322

Abstract: 50N322A GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A , . Emitter 1 2008-01-11 GT50N322A Electrical Characteristics (Ta = 25°C) Characteristics , 2008-01-11 GT50N322A IC ­ VCE 120 IC ­ VCE 120 Common emitter Tc = -40°C 20 10 15 , charge QG (nC) 3 2008-01-11 GT50N322A Switching Time ­ RG C ­ VCE 10000 Common , recovery current Transient thermal impedance(Junction-case) rth(j-c) (°C/W) GT50N322A 0 100
Toshiba
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50N322 ic501 2-16C1C 20070701-JA

GT30J124

Abstract: GT30F123 GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A , indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2008-01-11 GT50N322A , 10% tf 2 tr toff ton 2008-01-11 GT50N322A IC â'" VCE IC â'" VCE 120 , 2008-01-11 GT50N322A Switching Time â'" RG C â'" VCE 10000 Common emitter VCC = 600 V IC = 60 , recovery current Transient thermal impedance(Junctionâ'case) rth(jâ'c) (°C/W) GT50N322A 0 100
Toshiba
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gt40j323 gt30g123 GT45G127 TRANSISTOR REPLACEMENT GUIDE gt30j122 GF30F123