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    GT30J322 Search Results

    GT30J322 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT30J322 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT30J322 Toshiba Discrete IGBTs Original PDF
    GT30J322 Toshiba Silicon N-channel MOS type insulated gate bipolar transistor for high power switching, motor control applications Original PDF
    GT30J322 Toshiba Discrete IGBTs Original PDF
    GT30J322 Toshiba IGBT Chip, N Channel, 600V, 2-16F1A, 3-Pin Scan PDF
    GT30J322(Q) Toshiba GT30J322 - Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3P(N)IS Original PDF