NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| GT15J331 | Toshiba | Discrete IGBTs |
16 pages, |
Original |  |
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| GT15J331 | Toshiba |
7 pages, |
Original | |
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| GT15J331 | Toshiba |
6 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power , package or lead (Pb)-free finish. 1 2004-07-06 GT15J331 Electrical Characteristics (Ta = 25°C , VCE 5% Eoff Eon 2 2004-07-06 GT15J331 IC VCE VCE VGE 50 20 Common , 20 Case temperature 3 60 Tc 100 140 (°C) 2004-07-06 GT15J331 Switching , ) 2004-07-06 GT15J331 C VCE VCE, VGE QG 500 Cies Coes Cres Common emitter 3 10 ... | Original |
7 pages, |
TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK GT15J331 15J331 GT15J331 abstract |
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| Abstract: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power , Emitter JEDEC JEITA TOSHIBA 2-10S2C 2-10S2C Weight: 1.4 g 1 2002-01-18 GT15J331 , 2002-01-18 GT15J331 IC VCE VCE VGE 50 20 Common emitter Collector current 10 15 , 140 (°C) 2002-01-18 GT15J331 Switching time ton, tr RG 0.5 0.3 (us) Common , 1000 10 Switching loss 6 9 12 IC 15 (A) 2002-01-18 GT15J331 VCE, VGE ... | Original |
7 pages, |
GT15J331 GT15J331 abstract |
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| Abstract: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power , Emitter JEDEC JEITA TOSHIBA 2-10S2C 2-10S2C Weight: 1.4 g 1 2002-01-18 GT15J331 , 5% VCE Eoff Eon 2 2002-01-18 GT15J331 IC VCE VCE VGE 50 20 Common , 3 100 140 (°C) 2002-01-18 GT15J331 Switching time ton, tr RG 0.5 0.3 (ms , GT15J331 VCE, VGE QG C VCE 500 Cies 100 Coes Cres Common emitter 10 30 100 ... | Original |
7 pages, |
GT15J331 GT15J331 abstract |
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| Abstract: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power , customer's own risk. 2000-10-10 1/6 GT15J331 Electrical Characteristics (Ta = 25°C , change without notice. 2000-10-10 2/6 GT15J331 IC VCE VCE VGE 50 20 Common , ) 2000-10-10 3/6 GT15J331 ton, tr RG Switching time Switching time 0.5 (us) Common , ) 2000-10-10 4/6 GT15J331 VCE, VGE QG C VCE 3000 500 Cies 300 100 Coes Cres ... | Original |
6 pages, |
GT15J331 GT15J331 abstract |
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| Abstract: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 , TOSHIBA 2-10S2C 2-10S2C Weight: 1.4 g (typ.) 2010-01-07 GT15J331 Electrical Characteristics (Ta = , 0 IC 0 VCE 5% Eoff Eon 2 2010-01-07 GT15J331 IC VCE VCE VGE , ) -20 20 60 100 140 Case temperature Tc (°C) 3 2010-01-07 GT15J331 Switching , ) 2010-01-07 GT15J331 C VCE VCE, VGE QG 500 Cies 100 Coes 30 Cres Common emitter ... | Original |
7 pages, |
GT15J331 15J331 GT15J331 abstract |
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| Abstract: GT10J321 GT10J321 GT15J321 GT15J321 GT20J321 GT20J321 GT30J324 GT30J324 GT30J121 GT30J121 100 50 GT15J331 GT30J322 GT30J322 GT40J321 GT40J321 GT40J322 GT40J322 , 15 15 0.03 L GT15J331 600 15 30 70 TO-220SM SMD FRD 1.75 15 ... | Original |
16 pages, |
GT50N322 GT50J101 mg60m1al1 GT45G124 GF30F123 gt30g123 IGBT GT30F123 GT45F128 GT45G122 IGBT GT30F124 gt30g124 gt45f123 GT30F125 gt30f122 datasheet abstract |
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| Abstract: GT10J321 GT10J321 GT15J321 GT15J321 GT20J321 GT20J321 GT30J324 GT30J324 GT30J121 GT30J121 100 50 GT15J331 GT30J322 GT30J322 GT40J321 GT40J321 GT40J322 GT40J322 , 15 15 0.03 L GT15J331 600 15 30 70 TO-220SM SMD FRD 1.75 15 ... | Original |
16 pages, |
MG30T1AL1 GT45 GF30F123 GT15N101 GT50J101 MG60M1AL1 GT50N322 GT45F123 GT50T101 GT30F125 gt30g122 GT45G127 IGBT GT30J124 gt30g123 gt30g124 datasheet abstract |
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| Abstract: GT15J331 GT30J322 GT30J322 GT40J321 GT40J321 GT40J322 GT40J322 GT50J327 GT50J327 GT60J321 GT60J321 GT60J323 GT60J323 GT60J323H GT60J323H 120 120 120 120 80 , switching GT10J321 GT10J321 GT15J321 GT15J321 GT15J331 GT20J321 GT20J321 GT30J121 GT30J121 GT30J126 GT30J126 GT30J324 GT30J324 GT50J121 GT50J121 GT50J325 GT50J325 ... | Original |
16 pages, |
gt30g123 GT45F128 GT45G127 gt30g122 GT45G122 GT30F125 gt60m303 application notes GT45f122 Series GT45F12 MG30T1AL1 IGBT GT30J124 gt30f122 replacement for GT30F124 GT50N322 datasheet abstract |
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| Abstract: (V) @Ta = 25°C 100 50 GT15J331 GT40G121 GT40G121 GT50G321 GT50G321 GT30J322 GT30J322 GT35J321 GT35J321 GT40J321 GT40J321 GT40J322 GT40J322 , GT10J321 GT10J321 GT15J321 GT15J321 GT15J331 GT20J321 GT20J321 GT30J121 GT30J121 GT30J126 GT30J126 GT30J324 GT30J324 GT50J121 GT50J121 GT50J325 GT50J325 Pulsed Tc = ... | Original |
16 pages, |
MG30T1AL1 TRANSISTOR REPLACEMENT GUIDE gt30j122 GT50J101 induction cooker circuit diagram GT45G122 mg60m1al1 gt50j327 GT50N322 gt35j321 GT45G127 gt40j323 gt30g122 gt30f122 datasheet abstract |
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| Abstract: 100 100 100 100 50 GT15J331 GT40G121 GT40G121 GT40J321 GT40J321 GT40J322 GT40J322 GT50J327 GT50J327 GT50J328 GT50J328 GT50J122 GT50J122 , GT15J321 GT15J321 600 15 30 30 GT15J331 600 15 30 70 GT20J321 GT20J321 600 20 40 ... | Original |
16 pages, |
igbt rice cooker motorola DIODE 1N751A 808 GT50M101 GT15N101 GT50J101 mg30t1al1 diagram rice cooker mg60m1al1 GT45F124 induction cooker circuit diagram diagram induction cooker gt60n323 GT50N322 datasheet abstract |
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