TQM7M4006 GSM850/GSM900/DCS/PCS GSM850 GSM900 EIA/JESD22-A114 JESD22-C101

DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram DCS / PCS in DCS / PCS Out

TQM7M4006 TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram DCS / PCS in DCS / PCS Out Band Select Logic · · · TX_EN VCC VBATT VRAMP Power Control GSM 850 / 900 IN GSM 850 / 900 Out Product Description The TQM7M4006 TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier module designed for mobile handset applications. The module sets new standards in performance and size by employing the latest technologies in HBT power amplifier design, laminate design and CuFlipTM assembly technology. Highreliability is assured by InGaP HBT technology. This fully integrated module, in a minimal form factor, provides a simple 50 interface on all input and output ports. It includes internal power control with wide dynamic range, and on-board reference voltage. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Incorporates two highly-integrated InGaP power amplifier die, a GaAs high Q passive matching die with a CMOS controller. All die are CuFlipTM mounted to minimize thermal excursions. Each amplifier has three gain stages with interstage matching implemented with a high Q passives technology for optimal performance. The CMOS controller implements a fully integrated power control circuit within the module, eliminating the need for external detection to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable and band select inputs and a highly-stable on-board reference voltage. Excellent performance is achieved across the 824 849 MHz, 880 915 MHz, 1710 1785 MHz, and 1850 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate. 850 Band Applications · · GSM handsets GSM wireless cards and data links Package Style Package Size: LGA 5 x 5 x 1.1 mm3 Top View Vcc2D RF_in_DCS RF_out_DCS BS Tx_En Gnd Vcc3 Vbatt RF_out_GSM Vramp Electrical Specifications Parameter · · · · · · · Very compact size 5×5×1.1 mm3. Positive supply voltage 3.0 to 4.5 V. High efficiency typical GSM850 GSM850 52%, GSM900 GSM900 57%, DCS 51%, PCS 51%. CMOS internal closed-loop power control. >55 dB dynamic control range. GPRS class 12 compatible. High-reliability InGaP technology. Ruggedness 10:1. 50 input and output impedances. Few external components 900 Band DCS / PCS Band Units RF_in_GSM Min Typ 34.2 35 Efficiency 44 52 Pin 1.5 5 GSM Pout Max Typ 34.2 35 50 8 Min 57 1.5 5 Max Min Typ 32.5/32 33/32.5 44/44 8 5 All specifications subject to change without notice Vcc2G dBm 51/51 1.5 Max % 8 dBm For additional information and latest specifications, see our website: www.triquint.com May 25, 2007 (Rev. F) 2 TQM7M4006 TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS GSM850/GSM900/DCS/PCS Power Amplifier Module Absolute Maximum Ratings Symbol Parameter VBAT Units -0.5 to 5.5 VDC 2.5 A -0.5 to VBAT V 50 % Supply Voltage IBAT Absolute Maximum Value DC Supply Current VRAMP Power Control Voltage Duty Cycle at Max. Power VSWR Output Load TC 10:1 Case Temperature, Operating -20 to +100 °C TSTG Storage Temperature -55 to +150 °C PIN Input Power 12 dBm HBM per EIA/JESD22-A114 EIA/JESD22-A114 2000 V CDM per JESD22-C101 JESD22-C101 2000 V ESD ruggedness All ports Note: The part will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. Operating Parameters Parameter Conditions Typ/Nom Max. Units 3.0 Supply Voltage- VBAT Min. 3.5 4.5 V Supply Current- IBAT 1.8 Band Select Voltage- A GSM Vbs- L 0 0.5 Vdc DCS/PCS Vbs- H 1.2 3.0 Vdc TX Enable Input VTX_EN- L 0 0.5 Vdc High Leakage Current - IL Low VTX_EN- H 1.2 3.0 Vdc 10 µA VTX_EN- L, VRAMP = 0.23V 1 Load Impedances- Z0 Case Temperature- TC All specifications subject to change without notice For additional information and latest specifications, see our website: www.triquint.com May 25, 2007 (Rev. F) 50 -20 +85 °C 3 TQM7M4006 TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS GSM850/GSM900/DCS/PCS Power Amplifier Module GSM850/GSM900 GSM850/GSM900 Mode Characteristics Standard Conditions: VBATT=3.5V, Vramp=1.6V, Pin=5 dBm, TX_EN = H, BS = L, TC = 25°C, Duty Cycle = 25%. Parameter Frequency Range- f Conditions Min. Typ/Nom Max. Units GSM850 GSM850 824 849 MHz GSM900 GSM900 880 915 MHz 8.0 dBm Input Power for Pout max.- Pin 1.5 5.0 GSM850 GSM850 Band 34.2 35.5 dBm GSM900 GSM900 Band 34.2 35.2 dBm Output Power Degradation Vbatt=3.0V, Pin=5dBm, Tmin < TC