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Part Manufacturer Description Datasheet BUY
358504-000 TE Connectivity Ltd IN LINE COUPLERS visit Digikey Buy
358583-000 TE Connectivity Ltd CONN BACKSHELL ADPT SZ 28 visit Digikey Buy
UCC3585NG4 Texas Instruments 1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, PDIP16, GREEN, PLASTIC, DIP-16 visit Texas Instruments
UCC3585DTRG4 Texas Instruments 1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, PDSO16, GREEN, PLASTIC, SOIC-16 visit Texas Instruments
UCC3585MR Texas Instruments 1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, PDSO16, GREEN, PLASTIC, QSOP-16 visit Texas Instruments
UCC3585MG4 Texas Instruments Low Voltage Synchronous Buck Controller 16-SSOP 0 to 85 visit Texas Instruments

GS 3585

Catalog Datasheet MFG & Type PDF Document Tags

GS 3585

Abstract: 600V igbt dc to dc buck converter Drivers DESCRIPTIO U FEATURES The LT®3585 series are highly integrated ICs , GATE OF IGBT IGBTPD 20 TO 160 VBAT = 3.6V COUT = 50µF 3585 TA01a 1sec/DIV 3585 TA01b 3585f 1 LT3585-0/LT3585-1 LT3585-2/LT3585-3 W U U W W W AXI U RATI GS U , 3.6V COUT = 50µF 0.5s/DIV 3585 G01 AVERAGE INPUT CURRENT 500mA/DIV VBAT = 3.6V COUT = 50µF LT3585-3 Charging Waveform Normal Input Current Mode 2s/DIV 3585 G02 LT3585
Linear Technology
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GS 3585 600V igbt dc to dc buck converter LDT565630T-041 IGBT DRIVER SCHEMATIC chip Rubycon photoflash Rubycon CE W LT3585-0 LT3585-2 LT3585-1 MS/10-L LT3463/LT3463A A/400

GS 3585

Abstract: 155910 : 1 to 2: Gate 3 to 4: Drain gs ch stg Pt* i flMounted on an infinite heat sink , VD s=3V, V gs=0V V ds= 3V, ID S=20mA V ds= 3V, ID S=200mA Channel to Case VD S=10V ID s=200mA f , 4.649 4.513 4.383 4.252 4.133 4.007 3.893 3.787 3.683 3.585 3.486 3.396 2.664 2.163 1.809 1.541 1.337
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155910 99240 57640 ic 40730 HWF1686NC

GS 3585

Abstract: tr/mcr-1-1/GS 3585 6 * Low On-resistance 5 4 D1 D2 3585 Date Code G2 G1 1 2 G1 , =20V,V GS=0 _ _ 10 uA VDS=16V,V GS=0 _ Gate-Source Leakage Current Unit IGSS , _ _ Test Condition IS=-1.2A,VGS=0V. nS Is=-2A, V GS=0V nC dl/dt=100A/uS Notes: 1
SeCoS
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tr/mcr-1-1/GS 3585 N channel power mos fet sot SST3585

GS 3585

Abstract: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Gate Charge D1 S1 D2 6 * Low On-resistance 5 4 D1 D2 3585 Date Code , _ _ 1 uA VDS=20V,V GS=0 _ _ 10 uA VDS=16V,V GS=0 _ Gate-Source , Charge Qrr _ _ 20 15 _ _ Test Condition IS=-1.2A,VGS=0V. nS Is=-2A, V GS
SeCoS
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 90REF 95REF
Abstract: TRANSISTOR ABSOLU T E M AX I M U M RAT I N GS (Ta=25° , unless otherwise specified) PARAMETER SYMBOL , RANK RANGE B 35-85 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 75-125 D Unisonic Technologies
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BU407 BU407L BU407G BU407- BU407L- BU407G-

GS 3585

Abstract: E1 3585 Date Code G2 G1 1 2 3 G1 S1 S2 G2 S2 Millimeter Min , =20V,V GS=0 _ _ 10 uA VDS=16V,V GS=0 _ Gate-Source Leakage Current Unit IGSS , _ _ Test Condition IS=-1.2A,VGS=0V. nS Is=-2A, V GS=0V nC dl/dt=100A/uS Notes: 1
SeCoS
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STT3585

znr 14 k 221 varistor

Abstract: DIODE CYL ic a to r light and surge voltage suppressor G GS H HS Grommet (Lead wire length 300mm) Grommet (Lead , surge voltage suppressor G GS H HS E EZ T TZ D DZ DO DOZ Grommet (Lead wire length 300mm) Grommet(Lead , 358.5 346.5 13 386 374 14 413.5 401.5 15 441 429 16 468.5 456.5 17 496 484 19 18 523.5 , 358.5 346.5 13 386 374 14 413.5 401.5 15 441 429 16 468.5 456.5 17 496 484 18 523.5 , 303.5 291.5 331 319 358.5 346.5 13 386 374 14 413.5 401.5 15 441 429 16 468.5 456.5
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VF3000 znr 14 k 221 varistor DIODE CYL znr 14 k 361 varistor VF3140 3035 PT VF3130 VF3240-OG VF3230 VF3230-OG VF3130-OG

gp 542

Abstract: GRM1882C1H4R0CZ -58.4 -57.2 -57.2 -58.0 -57.6 -58.4 -57.9 -58.6 -59.2 800 C o nstan t, V gs A djustm ent, V ds=7.2V , V S W R in V gs Ids Ed RL (V ) (A ) (% ) (dB ) (-) 2.57 1.96 36.0 10.7 , 800 810 820 830 840 850 860 870 880 890 900 (V gs A djust) V S W R in RL (dB ) (- , 31.89 1.55 32.75 1.88 33.53 2.25 34.24 2.65 34.86 3.06 35.40 3.47 35.85 3.85 36.26 4.23
Mitsubishi
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RD05MMP1 GRM1882C1H151JA01 GRM1882C1H8R0DZ01 GRM1884C1H1R0CZ01 GRM1882C1H101JA01 gp 542 GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H 1/Diode gp 542 AN-900-030-A 800-900MH 064XA-G
Abstract: current Unit Ta = 25°C V gs Gate-source voltage Condition V ds Drain-source voltage , -153.04 4.260 93.86 0.031 19.02 0.694 -175.73 600.0 0.944 -157.98 3.585 -
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KGF1322S 7242H0 0QB2754 0Q22757 00227SA

KT 819 transistor

Abstract: 2N2222A 338 2H 2N GF GP MP GS GS SP SP GT SP 132 132 147 147S 147 147 147 279 279 147 147 2907 A 2907A 147 147 , 501 GP 502 GP 503 G|i 290 GM 1213 B GS 109 GS 112 GS 502 GT 308 A GT 308 B GT 308 W GT GT GT GT GT 311 , Gp Gn Gp Gp Gp Gn Gn Gp Gp Gp Gp Gp Gp Gp Gp Gp Gp Sn Sp Sn Sn Sn v , GD 244 GD 244 GS 1 1 2 d GS 1 1 , 147 GP 147 GF 147 KT 326 B KT 326 B KT 326 B GF 147 GF 147 GS 1 1 2 GS 1 1 2 GS 502 GT 320 W GT 320 W , SP 359, KT 630 W 2N 3904 GS 502, SC 237 D SS GS SF MP MP ^ 'd sc 239 D * 502, SC 237 D, 137 D 26 B
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH
Abstract: 20-1000 700-1500 30-700 750-1200 DB714 DB714 gs gs 6.95 5.95 pin connections PORT PRIMARY DOT PRIMARY , - - - - - - - - fg X1 Y5 Z3 X2 Y6 Z4 - - - - - - - - gs 6 4 - 3 1 2 - - 5 - jt 6 , 31.72 32.09 35.85 34.59 31.98 29.83 27.66 25.36 23.44 22.03 20.69 19.83 18.93 18.32 17.66 17.55 17.26 Mini-Circuits
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T-KK81 CD542 AT224 TC4-11 TC9-1-75 T2-1-KK81

FI-XB30SL-HF10

Abstract: LQ170E1LG11 358.5(W)×296.5(H)×17.0(D) typ. Mass 1800 MAX Surface treatment Anti-glare and hard-coating , RGB RGB GS4 GS8 . Horizontal period =12.5 us Gray scale : GS(4n) n=015 The explanation of each gray scale, GS(4n), is described below section 8-2. Note4The rush current is measured at
Sharp
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LQ170E1LG11 FI-XB30SL-HF10 FI-X30M MDF76 FI-X30H MDF76G-30P-1SD LD-16111 LD-16111A LD-16611B LD-16611C LD16611C-1

FI-XB30SL-HF10

Abstract: MDF76KAW-30S-1H stripe Display mode Normally white Unit outline dimensions *1 358.5(W)×296.5(H)×17.0(D) typ , Vcc=+5.0V, CK=54MHz Horizontal period =15.7 us Gray scale : GS(4n) n=015 The explanation of each gray scale, GS(4n), is described below section 8-2. RGB GS56 RGB GS60 LD15756B-9 6-2
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MDF76KAW-30S-1H lcd screen lvds 40 pin diagram TD5 423 transistor corss reference 15756B LD-15756 LD-15756A 2150V LD15756B-19
Abstract: BASIC 15.24 17.78 5.0 2.91 Plane Gauge GS-3. (5) D and E, does not indude mold flash. Mold flash , MODE B PO B 25-99 $35.85 43.05 LATCH B +V ref Out DAC4814AP DAC4814BP LATCH A -
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DAC4814 DAC2813 DAC2814 DAC4813 DAC7800

Transistor z1p

Abstract: transistor z2p Outline Dimensions (mm) 2ch LVDS 5.0 4 CCFL 358.5 x 296.5 x 17.0 mm Weight (g) Production , Vcc=+5.0V, CK=67.5MHz Horizontal period=12.5us Gray scale :GS(4n) n=0~15 The explanation of each gray scale, GS(4n), is described below section 8-2. Note4 The rush current is measured at this
Yi Shian Electro-Optical
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Transistor z1p transistor z2p TORAY E60L Y2P TRANSISTOR D121U Transistor y2n YS-M12-LQ170E1LG11 LD-17307 LQ170E1FG21F LQ0DZC5010

BEM 45

Abstract: 50S40 in JEDEC Seating Plane Gauge GS-3. (5) D and E, does not indude mold flash. Mold flash shall not , 25-99 100+ DAC4814AP DAC4814BP $35.85 43.05 $28.45 34.15 $24.95 29.95 TYPICAL PERFORMANCE CURVES Ta =
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BEM 45 50S40 12-BIT DAC2815

DAC 10V output

Abstract: DAC4815 Seating Plane Gauge GS-3. (5) D and E, does not indude mold flash. Mold flash shall not exceed .010 , PRICES 1-24 25-99 100+ DAC4815AP DAC4815BP $35.85 43.05 $28.45 34.15 $24.95 29.95 TYPICAL
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DAC4815 DAC 10V output DAC7801 DAC7802
Abstract: seated in JEDEC Seating Pin 1 14 Plane Gauge GS-3. (5) D and E, does not include mold flash , d5 -Vs $35.85 43.05 d6 BPO 100+ d7 Out 25 -99 26 A0 V r ef ln 1-24 -
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Abstract: Plane Gauge GS-3. (5) D and E, does not indude mold flash. Mold flash shall not exceed .010 inches , VouT A 2 27 A, - V ref Out 3 4 5 25-99 100+ $35.85 43.05 $28.45 34.15 -
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Abstract: Seating Plane Gauge GS-3. (5) D and E, does not include mold flash. Mold flash shall not exceed .010 , + LATCH B +VR F 0 Ut E 25-99 $35.85 43.05 DAC4814AP DAC4814BP Inv In 1-24 MODEL -
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