GP1L22 GP1L21 15MAX GPIL21 GP1S22

GPlL21/GPlL22 Subminiature, Hgh Sensitivity Photointerrupter s Features s ~ Dimensions 1. Ultra-compact (Capacity : 0.06CC) 2.

Gp1L21 /GPl L22 GPlL21/GPlL22 Subminiature, Hgh Sensitivity Photointerrupter s Features s ~ Dimensions 1. Ultra-compact (Capacity : 0.06CC) 2. High sensing accuracy (Slit width: O.3mm GP1L22 GP1L22) 3. High current transfer ratio CTR: MIN. 40%, GP1L21 GP1L21 ( ' MIN. 20%, GP1L22 GP1L22 ) 4, PWB direct mounting type 5. With mounting hole (Unit : mm) Internal connection diagram _ 4.2 ~enter of; 512 iaht Dath) - 4.2 *srt- wlti+. - - - (CO.8) H A-tins 1. Cameras 2. Floppy disk drives *Slit width GP1L21 GP1L21 : O.Bmm GP1L22 GP1L22 : 0.3mm `z ! I II tl D `\ . 4 3 (Ta=25°C) H Absolute Maximum Ratings Symbol IF Parameter Input I output *1 Forward current - Reverse voltage Power dissipation Collector -emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Oper~~lng temperature Storage temperature * ] Soldering temperature *Tolerance : f 0.2mm *Burr's dimensions : 0. 15MAX 15MAX. *Rest of gate : 0.3MAx ~ ) : Reference dimensions *The d!mensfons indicated by x refer to thosa measured from the lead ba~. I ~R P I Rating 50 6 75 Unit mA I v m~r ~"-~+-+ IL Pc 1 p~ ,. I (, 25 40 T.,~ T.(,1 mA 40 mW 75 100" mW cc to + 85 to +100 `c . 260 c For 5 seccmds nn }//4b q/// 1 mm or more . Soldering araa ~7* I "In he aWnce of confimaton by device w,fication shack, SHARP bkes no ewo$IbIIIty for any defscb hat cccur n qupment USI:g any of WARPS devIces, sh~ n cablcgs, data Hs, elc Untact WARP n ordw fc obtatn he Iateat vsraIon of the device wlficahon ahaata bfore ustng any SHARPs device GPl L21/GPl L22 9 ~-l Parameter Forward voltage InpLlt Rever.= current Collector dark current output GP1L21 GP1L21 Current transfer ratio GP1L22 GP1L22 `r~~nsfer Collector emitter GP1L21 GP1L21 charac saturation voltage GP1 L22 teristics I Response time m. ('I'a=25°C) Char~tiCS 1 F-ad ~ Temperature D;.', +;ma `"= "'"L Fall time Symbol VF IR MIN. Conditions TYP. 1.2 II. =20mA yR=~v - VCF:=1OV VC~:=2V, I~=lmA VC~=ZV, l~=lmA I~=2mA, Ic=O.4mA VCE,$.,) IF=2PA. . . .T,=n')mA . . . . . ,. . . . . . . t, VL; =2V, 1~=1 OmA I n RI= 100Q ICE() ~TR Unit L' PA A MAX. 1.4 10 10 h 1 500 40 20 OA - 1.0 - 1 % - I) 700 1.0 \ i' I ps I #s 1 400 350 80 70 - va. Am- !Inlbiellt temperature "1. ("C I .4n1biet1t ternwrdture T. ("C) 3 ForWad Cu-t va. Forward VoItaga 4 ~ C u r r a n t v a . Fofward CU* 6( I , \,cF - 2V Ta=25"c; 5(1 GPIL21 GPIL21 f 41) / :{0 G P 1 L22 / ?(I 10 - y" (1 0 ~ 4 6 x 10 Fur~vard currerlt II. (IIIA) 873 GPl L21/GPl L22 Voltags .- . Voltsgt? (GP1L21 GP1L21) 22 20 10 lx 9 16 8 14 ]? 7 ~ 10 s 8 ~ 4 4 (GP1S22 GP1S22) 11 , 3 ~ I o 1) , 0 1 ~ :{ ! 36i8~) 1(1 I z :{ 4 56789 Io 7 ~~tivolb4gsw Ambient Tem~ 10 1 I G P 1 L 2 1 II =2mA I `)"- (I ~ E - +-~ () J (1,2 `)', ~ F-t-lm 25 0 -25 7,5 50 Ambierlt temperature () -. -22 100 T,( ("c I 25 0 Anlbietlt 50 75 100 temperature T, ("C) ~.e~-m~ 400 200 100 50 Input w Y R" output 20 : 1() ~ 5 10 20 .;0 I 00 200 ,500 1000 ?O(l{l [.oad resistance R r (Q) 874 L- , t'~: +.tr .~t ` 5 1 Outpu 1070 90% GPlL21/GPlL22 Fig.10-a Wtive ~ culTent Ve. Shiekl D i s t a n c e (GP1L21 GP1L21) IF= lnlA Vcl:= 2V T. 25t' I 00 )1 Sbie,d -+l:. `. ~ LktEctol B .- 50 -+ 0 (I)etc~tOr center) I . (> "- ~ 1 () ~ 1 :3 Shield distance 1. (mm) ~.lo-b Relative ~ cum Va. shield Distance (GP1L21 GP1L21) Fg.11 Relatie ~ cum Va. shield Dicta-(2) 1 F 1 (! ,2 I () I ~ 3 " ~ Shield rlistancr 1. (mm] 1 0 I m:l I ~ :{ Shield distat}ce 1. (!mtm) .Please refer to the chapter "Precautions for Use" (Page 78 to 93) 875