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LTC6603IUF#TRPBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6603CUF#TRPBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6603CUF#PBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6602IUF#TRPBF Linear Technology LTC6602 - Dual Matched, High Frequency Bandpass/Lowpass Filters; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6603IUF#PBF Linear Technology LTC6603 - Dual Adjustable Lowpass Filter; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6602CUF#TRPBF Linear Technology LTC6602 - Dual Matched, High Frequency Bandpass/Lowpass Filters; Package: QFN; Pins: 24; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

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GP aaa

Catalog Datasheet MFG & Type PDF Document Tags

GP AAA

Abstract: LDMOS transistor 7.2 CW aaa-000328 30 Gp (dB) 20 Gp 60 D (%) 40 (1) (2) (3) 10 (1 , = 7.2 dB at 0.01 % probability on CCDF. 22 Gp (dB) 18 Gp aaa-000331 72 D (%) 48 -10 , CCDF; carrier spacing 5 MHz. 35 Gp (dB) 30 25 Gp 20 15 10 D 5 (1) (2) (3) (1) (2) (3) aaa , ] IDq (mA) 410 410 410 410 VDS (V) 28 28 28 28 PL(AV) (W) 13.5 5 15 5 Gp (dB) 19 20.3 19 20.5 , class-AB production test circuit. Symbol Gp RLin D ACPR5M Parameter power gain input return loss drain
NXP Semiconductors
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GP AAA BLF6G22L-40P BLF6G22LS-40P 2002/95/EC IS-95 6G22LS-40P

j597

Abstract: TRANSISTOR j589 7.4 1-carrier W-CDMA 19 Gp (dB) 18 aaa-001320 50 D (%) 40 PAR (dB) 8 aaa-001321 Gp 7 , 7.5 2-carrier W-CDMA 19.0 Gp (dB) 18.6 Gp aaa-001323 50 D (%) 40 19.0 Gp (dB) 18.6 (3) (2) (1 , ] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18.5 D (%) 31 , PL(AV) Gp RLin D ACPR Parameter average output power power gain input return loss drain efficiency , NXP Semiconductors BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor 7.3 1 Tone CW 19.0 Gp
NXP Semiconductors
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j597 TRANSISTOR j589 22LS-250P
Abstract: -250P Power LDMOS transistor 7.3 1 Tone CW 19.0 Gp (dB) aaa-001318 (3) (2) (1) 60 D (%) 50 (3) (2) (1 , -250P Power LDMOS transistor 7.4 1-carrier W-CDMA 19 Gp (dB) 18 aaa-001320 50 D (%) 40 PAR (dB) 8 aaa-001321 Gp 7 (3) (2) 17 30 6 (1) 16 D 20 5 15 10 14 0 40 80 0 120 , transistor 7.5 2-carrier W-CDMA 19.0 Gp (dB) 18.6 Gp aaa-001323 50 D (%) 40 19.0 Gp (dB) 18.6 (3 , ] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18.5 D (%) 31 NXP Semiconductors
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FLM6472-12D

Abstract: FLM3742-12D DS -5 83. 3 12 5 -1 -3. 5 5 480m 4 5 4.8 FLM3742-25D a±a C-Band PA GaAs N D 15 DS -5 100 17 5 -1 -3. 5 5 600« 2 5 6.8 FLM3742-4B/D a±a C-Band PA GaAs N D 15 DS -5 25 2. 7 5 -1 -3.5 5 90m 1 5 1.1 FLM3742-8B/D a±a C-Band PA GaAs N D 15 DS -5 42.8 5.4 5 -1 -3.5 5 180m 2 5 2.2 FLM4450-12D a±a C-Band PA GaAs N D 15 DS -5 57 8.5 5 -1 -3.5 5 300m 3.3 5 3.4 FLM4450 , . 7 5 -1 -3.5 5 90m 1 5 1. 1 FLM5964-6D â Â±a C-Band PA GaAs N I) 15 DS -5 31 4.2 5 -1 -3. 5
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OCR Scan
FLM3742-12D FLM4450-25D FLM4450-4B/D FLM5359-8B FLM5964-14/D FLM6472-12D FLM3742-4B FLM6472-8C FLM3742-14/D FLM4450-14/D FLM4450-8B/D
Abstract: ã'·ã'¹ãƒãƒ ãƒ» ã'¿ã'¤ãƒž ACBUS ï¼»0.7ï¼½ XTOUT PLL F I LTER SP I I /Fロã'¸ãƒƒã'¯ GP I O 2 , ホã'¹ãƒæ©èƒ½ã''ã'' > 64 K バã'¤ãƒã®ã'¨ãƒ³ãƒ™ãƒ‡ãƒƒãƒ‰ãƒ»ãƒ• VINCULUM VNC1L とã"だUSB ホ ãã›ã''ã"とがでãã¾ã™ï¼ã'³ã'¹ãƒã®é¢ ラッã'·ãƒ¥ ROM プロã'°ãƒ©ãƒ ãƒ»ãƒ¡ãƒ¢ãƒª ã'¹ãƒãƒ»ã'³ãƒ³ãƒãƒ­ãƒ¼ãƒ©ãŒç™ºå£²ã•ã'Œã¾ã— ä¿'でæ­å¿µã—てã"ãé'発è'ã'",敷å±ãŒ > 4 K バã'¤ãƒã , ¨™æº USB フ 現å¨å¸'販さã'Œã¦ã"ã'' USB デバã'¤ デバã'¤ã'¹ã''使ç"¨ã FTDI
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FLR024FH

Abstract: FLX102MH-12 S-Band PA GaAs/SB N D 15 DS -5 15 2.4 5 -2 3 50» 0.25 0.5 5 0.8 FLS50ME â'¢Â±Ã¤ S-Band PA GaAs n , 2.5 0.08 5 0. 15 FLX06MB a±ü X-Band PA/OSC GaAs N D 12 DS -5 5 0. 15 5 0.3 , 0.6 5 -1 -3. 5 5 20m 200m 5 250m FLX202MH-12 »±a X-Band PA GaAs N D 15 DS -5 12.5 1.2 5 -1 -3.5 5 40m 400m 5 500m FSCIOFA/LG a±ü C-Band LN A GaAs/MES N D 8 DS -5 250m 30m 90m 3 -0.5 -3. , dB max dB f (Hz) Ro (0) Vos (V) Id (A) Pout=39dBm. Gp=6/6. 5dBtyp f=7. 7-8. 5GHz
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OCR Scan
FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLR024FH FLR026FH FLX102MH-12 FLS09ME FLS09 FLR016XP FLM7785-8C/D FLR01SXP/XV

GP Batteries

Abstract: GPAR01 PRODUCT SPECIFICATION + GP ReCyko Value Charger Model: AR01 Revision History Revision , 51.4 6.0 Unit : mm NOTE : It is safe to charge GP NiMH batteries continuously with GP ReCyko+ Charger. Product Name : GP ReCyko+ Value Charger Description : Continuous NiMH Battery , (DO NOT mix AA and AAA size batteries in the same channel.) Output Voltage : 2.8V DC Charging Current : AA 180mA ± 10% AAA 80mA ± 10% Charging Time : MTBF : 30000
GP Batteries
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GPAR01 GP Batteries recyko MTBF BATTERY CHARGER GP Ni-mh charger circuit 10w 12060I06448
Abstract: U7024B 5 6 7 8 12 11 10 9 Figure 2. Pinning ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Pin 1 2 3 4 5 6 7 8 9 Symbol R_SWITCH SWITCH_OUT GND1 LNA_IN V2_PA V3_PA_OUT Temic Semiconductors
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PSSOP16 U7024B-MFB U7024B-MFB-G3 88/540/EEC 91/690/EEC D-74025

Powerbank

Abstract: GP Powerbank is safe to charge GP NiMH batteries continuously with GP PowerBank AA AA/AAA AA AA/AAA 123.0 18.0 2 Unit : mm . Product Name : GP PowerBank 3 Description : Continuous , channel (DO NOT mix AA and AAA size batteries in the same channel.) Output Voltage : 2.8V DC Charging Current : AA 130mA +/- 25% AAA 52mA +/- 25% Trickle Charge Current : AA 80mA +/- 25% AAA 33mA +/- 25% Charging Time : 18 +/- 0.5 hours MTBF : 30000 hours (at ambient
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GPPB04 Powerbank GP Powerbank GP Batteries GPPb GP Powerbank Datasheet Ni-MH AA battery 03040I04070

FLL101ME

Abstract: FLL100MK » FLL50MK L-Band PA GaAs/SB N D 15 DS -5 18.5 2.4 5 -2 3 50m 500« 5 800m FLLIOOMK a±a L-Band PA GaAs/SB N D 15 DS -5 30 4.8 5 -2 3 100» 1 5 1. 6 FLL101ME «±a L-Band PA GaAs/SB N D 15 DS , -5 25 2.7 5 -1 -3.5 5 90m 1 5 1.1 FLM1011-4D â'¢Â±a X-Band PA GaAs N D 15 DS -5 25 2.7 , ) Pout=30dBm. Gp=6. 5dBtyp f=14. 5GHz. ldB|iJi#l±SI^ UT FLK102XV Pout=32.5dB».Gp=6dBtyp f=14. 5GHz. ldBffl#EE$8jä 200 GSDS FLK202MH-14 Pout=32. 5dBi. Gp=6dBtyp f=14. 5GHz. ldBfflfEI&Ã
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OCR Scan
FLL171ME FLL351ME FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-4C FLL100MK FLM1414-4C fll171 FLK202MH-14 PA FLK202XV FLL10ME FLL17MB FLL35ME FLL200IB
Abstract: Performance â'¢ Broadband Power Gain @ f = 50 MHz Gp = 20 dB Typ (MHW6205) Gp = 22 dB Typ (MHW6225) â , MHW6205 MHW6205 Gp 19.5 20.3 20.5 22.5 dB Power Gain f = 50 MHz f = 550 MHz MHW6225 MHW6225 Gp 21.4 22 22.6 24 dB S 0.3 2 dB MHW6205 MHW6225 Gf â'" â , , Inc. 1994 MHW6205 MHW6225 1 PACKAGE DIMENSIONS Q â'"Aâ'" 0.25 (0.010) S â'"Zâ , INCHES MIN MAX â'"â'"â'" 1.775 â'"â'"â'" 1.085 â'"â'"â'" 0.840 0.018 0.022 0.465 0.510 0.300 Motorola
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MHW6205/D
Abstract: '"Channel Performance â'¢ Broadband Power Gain â'" @ f = 40â'" 550 MHz Gp = 18.5 dB Typ @ 50 MHz Gp = 19.2 dB Typ @ 450 MHz Gp = 19.5 dB Typ @ 550 MHz Gp = 19.8 dB Typ @ 600 MHz â'¢ Broadband Noise Figure NF = 4.5 , Power Gain 50 MHz 450 MHz 550 MHz 600 MHz All MHW5185B MHW6185B MHW6185â'"6 Gp 18 , DEVICE DATA PACKAGE DIMENSIONS Q â'"Aâ'" 0.25 (0.010) S â'"Zâ'" NOTES: 1 , â'"â'"â'" 1.775 â'"â'"â'" 1.085 â'"â'"â'" 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC Motorola
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MHW5185B/D MHW6185-6
Abstract: LOW NOISE CATV AMPLIFIERS â'¢ Broadband Power Gain â'" @ f = 40 â'" 550 MHz GP = 18.5 dB Typ @ 50 MHz GP = 19.1 dB Typ @ 450 MHz GP = 19.5 dB Typ @ 550 MHz â'¢ Broadband Noise Figure NF = 4.5 dB , 50 MHz 450 MHz 550 MHz Power Gain Typ MHW5183 MHW6183 Frequency Range Min GP , MHW5183 MHW6183 1 PACKAGE DIMENSIONS Q â'"Aâ'" 0.25 (0.010) S â'"Zâ'" NOTES: 1 , â'"â'"â'" 1.775 â'"â'"â'" 1.085 â'"â'"â'" 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC Motorola
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MHW5183/D

msr127tp

Abstract: msr127 QphxxpyiftyÁfpÁiptrypiÁÁrtpÁÁxpÁftfyhpÁ tyÁÁiphttyxfvtyrÁhpÁtsÁpphÁÁfÁhpftyÁ qyhtyÁÁfÁphsythfwÁxpfp Gp , Á 4xftyÁpgtpÁfÁhvpwwfxftyhxÁÁ fghxfqp !ÁÁÁ HtrtyfwÁtyhty R $UHD $FFHVV &RQWURO 6DIHW , hxxttytyrÁspÁ446ÁipthpÁ 6SHFLDO IHDWXUHV t QpwfÁ t QrrpiÁpÁqÁhyhty t EyrÁpftyrÁfyrpÁÁÁ$Áx t ApfpiÁqyÁtyi #ÁÁÁ , Gp' 4ÁpfÁtypwhvÁppyÁspÁxfhstypÁftyrÁfrftyÁ fqpÁfyÁpÁÁfyÁtyptyÁqÁspÁwtrsÁfs ATTENTION 7twf , fsÁtyppiÁÁtyfipfpÁ Gp' 4yÁ87FÁhsphvÁtqÁspÁiypfxÁhyfhÁfhfwwÁ fwtryxpyÁÁipthpÁyÁpÁpfiÁfqpÁ
Allen-Bradley
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440L-R4F0020-Q 440L-R4F1570-Q 440L-T4F2070-Q msr127tp msr127 100S-C43DJ404BC msr127t SEN-0401-A-EN
Abstract: MHz Gp = 21 dB (Min) @ 50 MHz Gp = 21.7 dB (Min) @ 600 MHz â'¢ Broadband Noise Figure @ 600 MHz NF , 40 â'" 600 MHz Power Gain f = 50 MHz Gp 21 21.5 22 dB Power Gain f = 600 MHz Gp 21.7 â'" 23 dB Slope f = 40 â'" 600 MHz S 0 â'" 1.8 , , Inc. 1994 f = 50 MHz f = 600 MHz MHW6222â'"6 1 PACKAGE DIMENSIONS Q â'"Aâ'" 0.25 , S U V W INCHES MIN MAX â'"â'"â'" 1.775 â'"â'"â'" 1.085 â'"â'"â'" 0.840 0.018 0.022 Motorola
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MHW6222-6 MHW6222-6/D
Abstract: '¢ é›'é³ç‰¹æ'§ãŒå"ªã'Œã¦ã"ますã'':NF=0.57dB(標æº) (@f=2GHz) â'¢ 高å©GP ,IC - Pin 25 Pout, GP ,IC - Pin 20 24 20 24 10 21 10 , ) Pout, GP ,IC - Pin Pout, GP ,IC - Pin 27 20 24 20 24 10 21 10 21 0 18 , 出å›ãƒ¬ãƒ™ãƒ« Pout(dBmW) 30 GP(dB) 27 ã'³ãƒ¬ã'¯ã'¿é›»æµ IC(mA) 出å›ãƒ¬ãƒ™ãƒ« Pout(dBmW) 30 GP(dB) ã'³ãƒ¬ã'¯ã'¿é›»æµ IC(mA) 27 出å›ãƒ¬ãƒ™ãƒ« Pout(dBmW) 30 GP(dB) 27 Toshiba
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MT4S301 MT4S301U

GP Ni-mh

Abstract: recyko PRODUCT SPECIFICATION + GP ReCyko Value Charger Model: AR02 Revision History Revision , 5.0 NOTE : It is safe to charge GP NiMH batteries continuously with GP ReCyko+ Charger. Unit : mm 37.0 Product Name : GP ReCyko+ Value Charger Description : Continuous NiMH , channel. Output Voltage : 1.4V DC Charging Current : AA 180mA ± 10% AAA 80mA ± 10 , : GS, CE, UL, CQC Warranty Period : 12 months from ex-factory date Battery AA AAA
GP Batteries
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GPAR02 GP recyko AR02 104L charger MEI Semiconductors
Abstract: '" 450 MHz Gp = 20 dB (Typ) @ 50 MHz Gp = 22 dB (Typ) @ 450 MHz â'¢ Broadband Noise Figure NF = 6.5 , '" 450 MHz Gp 20 21 20.5 21.7 21 23 dB S 50 MHz 450 MHz Symbol BW , â'"Aâ'" 0.25 (0.010) S â'"Zâ'" NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 , P Q R S U V W INCHES MIN MAX â'"â'"â'" 1.775 â'"â'"â'" 1.085 â'"â'"â'" 0.840 0.018 , 0.148 0.168 â'"â'"â'" 0.595 1.500 BSC 0.200 BSC 0.280 BSC 0.435 0.450 STYLE 1: PIN 1. 2. 3 Motorola
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MHW5205/D MHW5205
Abstract: é›'é³ç‰¹æ'§ãŒå"ªã'Œã¦ã"ますã'':NF=0.57dB(標æº) (@f=2GHz) â'¢ 高å©GP ,IC-Pin 25 Pout ,GP ,IC-Pin 20 , (dBmW) 10 å¥å›ãƒ¬ãƒ™ãƒ« Pin(dBmW) Pout ,GP ,IC-Pin Pout ,GP ,IC-Pin 27 20 24 20 , 0 10 12 9 出å›ãƒ¬ãƒ™ãƒ« Pout(dBmW) 30 GP(dB) 27 ã'³ãƒ¬ã'¯ã'¿é›»æµ IC(mA) 出å›ãƒ¬ãƒ™ãƒ« Pout(dBmW) 30 GP(dB) ã'³ãƒ¬ã'¯ã'¿é›»æµ IC(mA) 27 出å›ãƒ¬ãƒ™ãƒ« Pout(dBmW Toshiba
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MT4S301T

1604G-6F22-9V

Abstract: CR17345 AA O W OM W. 12589 GB-4 GP GP_Battery AAA W AAA 1.5V 2 .C WW .100Y.C M.TW W .TW 00Y WW , GP Model Dimension .1 Dia (mm)M Ht (mm) IEC JISW EVEREADY O Other O W WW .100Y.C M.TW WW , .1010.5 M AA .1 .T 50.0 10 GP24G 44.5 R03 R03 W W 1.5 Y.COM W OM W 1212 00Y.CO AAA W W 26.5(L , TW 8757 1604G-6F22-9V O GP GP Battery WW PP3 Y. 1.5V 2 . WW .100Y.C M.TW WGB-1 00Y.C GP .TW GP Battery W W 8442 D 100 W 61.5 34O .C W.1 Y.COM W GP Battery WW. 0Y.COMpcs/package 8441 GB-2 GP
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VARTA-123A VARTA-4LR44 CR17345 varta 2cr5 2CR5 varta 6F22 9V BATTERY VARTA CR1/2AA MR-03AA 1604G16F22-
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