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NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TrilithIC BTS 781 GP Target Data Sheet 1 Overview 1.1 Features · · · · · · , Under-voltage detection with hysteresis P-TO263-15-1 P-TO263-15-1 Type Ordering Code Package BTS 781 GP on request P-TO263-15-1 P-TO263-15-1 1.2 Description The BTS 781 GP is part of the TrilithIC family containing , pins, so the BTS 781 GP can be used in H-bridge- as well as in any other configuration. The double , Target Data Sheet 1 2001-10-31 BTS 781 GP 1.3 Pin Configuration (top view) Molding ... | Original |
17 pages, |
GPT09151 GPS05123 BCR192W GP 841 Diode datasheet abstract |
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| Abstract: TrilithIC BTS 781 GP Target Data Sheet 1 Overview 1.1 Features · · · · · · , Package BTS 781 GP on request P-TO263-15-1 P-TO263-15-1 1.2 Description The BTS 781 GP is part of the , are connected to individual pins, so the BTS 781 GP can be used in H-bridge- as well as in any other , the SPD30N06S2L-16 SPD30N06S2L-16. Target Data Sheet 1 2001-07-05 BTS 781 GP 1.3 Pin , 1 Target Data Sheet 2 2001-07-05 BTS 781 GP 1.4 Pin Definitions and Functions ... | Original |
17 pages, |
GPT09151 GPS05123 BCR192W datasheet abstract |
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| Abstract: TrilithIC BTS 7750 GP Data Sheet 1 Overview 1.1 Features · · · · · · · · , P-TO263-15-1 P-TO263-15-1 Type Ordering Code Package BTS 7750 GP Q67006-A9402 Q67006-A9402 P-TO263-15-1 P-TO263-15-1 1.2 Description The BTS 7750 GP is part of the TrilithIC family containing three dies in one package: One , mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7750 GP can be , low-side switches of the BTS 7750 GP are manufactured in SMART SIPMOS® technology which combines low RDS ... | Original |
16 pages, |
GPT09151 GPS05123 Q67006-A9402 Q67006-A9402 abstract |
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| Abstract: TrilithIC BTS 7710 GP Data Sheet 1 Overview 1.1 Features · · · · · · · · , to 50 kHz P-TO263-15-1 P-TO263-15-1 Type Ordering Code Package BTS 7710 GP Q67006-A9400 Q67006-A9400 P-TO263-15-1 P-TO263-15-1 1.2 Description The BTS 7710 GP is part of the TrilithIC family containing three dies in , the BTS 7710 GP can be used in H-bridge- as well as in any other configuration. The double high-side , the automotive and industrial area. Data Sheet 1 2001-02-01 BTS 7710 GP 1.3 Pin ... | Original |
16 pages, |
Q67006-A9400 GPT09151 GPS05123 BTS 7710 G A940 Q67006-A9400 abstract |
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| Abstract: 50 V 4 - - 10 mA 2983/841" V,N = 2.4 V*, Vs = 80 V 4 - - 10 mA Clamp Diode Forward Voltage Ir , IN ' 150 Dwg. GP-022-4 MjcroSystems.lnG. 115 Northeast Cutoff, Box 15036 Worcester , 2983/841" V,N = 0.4 V*, Vs = 80 V, Ta = +70°C 1 - - 200 MA Output Sustaining Voltage VcE(SUS) 2981/82f lOUT = -45 mA - 35 - - V 2983/841" lOUT = -70 mA - 45 - - V Collector-Emitter Saturation Voltage , V,N = 3.85 V 3 - 310 450 HA 2982/841" V|N = 2.4 V 3 - 140 200 HA V,N = 12 V 3 - 1.25 1.93 mA ... | OCR Scan |
10 pages, |
UDN2984LW bzfc UDN-2982A UDN2980A UDN2981A UDN2982A UDN2984A 113A CMOS UDN2982LW UDN2983A UDN2981 application relay driver ic UdN2981 841 servo A2982SLW UDN2981A abstract |
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| Abstract: FEATURES ·High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz ·High Efficiency: 65%typ. ·Integrated gate protection diode 1.5+/-0.1 1.6+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 , device have an interal monolithic zener diode from gate to source for ESD protection. 1 2 , Gp 20 50 15 40 10 30 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA 5 20 0 10 -10 0 10 Pin(dBm) Pout(W) , Idd(A) 25 70 d(%) Po(dBm) , Gp(dB) , Idd(A ... | Original |
6 pages, |
transistor M 839 5343 transistor t06 TRANSISTOR RF Transistor s-parameter vhf RD01MUS2 GP 809 DIODE GP 839 DIODE RD01MUS2 abstract |
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| Abstract: applications. This device has an internal monolithic zener diode from TYPE NAME gate to source for ESD protection. FEATURES ·High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz ·High Efficiency: 65%typ. ·Integrated gate protection diode 4.4+/-0.1 1.5+/-0.1 1.6+/-0.1 LOT No. 1 2 1.5+/-0.1 , TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 80 Po 60 Gp 20 , 0 10 Pin(dBm) Pout(W) , Idd(A) 25 70 d(%) Po(dBm) , Gp(dB) , Idd(A) 30 ... | Original |
7 pages, |
IDQ100 GP 809 DIODE GP 839 DIODE FAN 3792 RD01MUS2 RD01MUS2 abstract |
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| Abstract: applications. This device has an internal monolithic zener diode from TYPE NAME gate to source for ESD protection. FEATURES ·High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz ·High Efficiency: 65%typ. ·Integrated gate protection diode 4.4+/-0.1 1.5+/-0.1 1.6+/-0.1 LOT No. 1 2 1.5+/-0.1 , 60 Gp 20 50 15 40 10 30 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA 5 Pout(W) , Idd(A) 25 70 d(%) Po(dBm) , Gp(dB) , Idd(A) 30 20 0 10 -10 0 ... | Original |
7 pages, |
RD01MUS2 GP 841 Diode GP 839 DIODE GP 809 DIODE RD01MUS2 abstract |
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| Abstract: 26PCFFA6D HIH-4010-001 SCX05DN 1INCH-D-MV 785-CSLA1CF HIH-4021 SENSORS ALPS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1834 BEI Duncan. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1835 Honeywell . . . . . . . . . . . . . . . . . . ... | Original |
32 pages, |
A1004BT22P0 785-SS541AT 653-E2AM18KS08WPB1 HGDEPM021A SS30AT ptc heaters omron contact relay 12VDC MT 6253 HOA1870 785-SS41 785-APS00B E2A-M18KS08-WP-B12M datasheet abstract |
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| Abstract: & 1200 Series 0987 RZ Series - NEW 985 GP Series 1500 Series 1600 Series 1700 Series 60 61 , 2590 Series 2690 Series General Information - Double Row 100/670A 100/670A GP Series 200/671 GP Series 200 HB Series 300/672 GP Series 400 Series 410 GP Series 600 GP Series 600A GP Series (800A Riveted) 601 GP Series (801 Riveted) 602 GP Series (802 Riveted) 603 GP Series 68 69 70 71 72 73 - 74 , Double Row Terminal Blocks (con't) 604 GP Series 605 GP Series 621 RZ Series 670A RZ Series 671 RZ ... | Original |
154 pages, |
MPC 2120 NEC 05F MIK16 ul508a chart 6J200A3B 6CC30A3SPQ 6R30A2S AE GP 531 6M30A1SPQ 6F200A3BE R6J60A3B 486A-486B 6F200A1BE Transistor NEC 05F datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| 640-E427 640-E427 640-E427 640-E427 E640-E419 E640-E419 E640-E419 E640-E419 E641 E641 E641 E687 E688 E752 E785 E841 E841 E891 E891 E905 E965 E968 E971 E972 F ANTIPARALLEL DIODE; LOW FORWARD VOLTAGE DROP; HIGTH SWITCHING SPEED; LOW TAIL CURRENT; LATCH-UP FREE; INCLUDING FAST FREE-WHEEL DIODE 14.8m 34.8m 4,9m 5.5m 22m 13.5m 14.5m 3.0 # 12.96ps bup313d 21.08.00 BUP314 BUP314 BUP314 BUP314 C 0,8m T_j 25.0 1200.0 25.0 TO-218 AB IGBT WITH ANTIPARALLEL DIODE; LOW FORWARD VOLTAGE DROP; HIGTH SWITCHING SPEED; LOW TAIL CURRENT; LATCH-UP FREE; INCLUDING FAST FREE-WHEEL DIODE 14.8m 34.8m 4,9m 5.5m 22 www.datasheetarchive.com/download/92011529-169531ZC/igbtsip.zip (igbtsip.xls) |
Infineon | 07/09/2000 | 58.47 Kb | ZIP | igbtsip.zip |
| noise rejection. Each device pin has two antistatic protection diodes to prevent device damage. These diode also prevent the device from latching up should an overvoltage/ undervoltage condition appear on www.datasheetarchive.com/files/stmicroelectronics/st62oncd/htm/faq/st6faq.txt |
STMicroelectronics | 12/10/1998 | 255.18 Kb | TXT | st6faq.txt |
| noise rejection. Each device pin has two antistatic protection diodes to prevent device damage. These diode also prevent the device from latching up should an overvoltage/ undervoltage condition appear on www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/mcu8/st6/st6faq.txt |
STMicroelectronics | 12/10/1998 | 255.18 Kb | TXT | st6faq.txt |
| Replacement ULTRAFAST DIODES 274 3384 BYW100-200 BYW100-200 BYW100-200 BYW100-200 UES1002 UES1002 UES1002 UES1002 Nearest Preferred TIMERS 203 2182 NE555N NE555N NE555N NE555N NE555N NE555N NE555N NE555N LM317MT LM317MT LM317MT LM317MT KA317M KA317M KA317M KA317M Replacement POWER SCHOTTKY DIODES 265 4605 STPS4045CW STPS4045CW STPS4045CW STPS4045CW 40CPQ045 40CPQ045 40CPQ045 40CPQ045 Replacement VOLTAGE Preferred Power Bipolar 228 4137 TIP32B TIP32B TIP32B TIP32B MJE32B MJE32B MJE32B MJE32B Nearest Preferred ULTRAFAST DIODES 274 3390 BYW98-200 BYW98-200 BYW98-200 BYW98-200 UES1304 UES1304 UES1304 UES1304 DIODES 273 3445 SMBYT03-400 SMBYT03-400 SMBYT03-400 SMBYT03-400 30BF40 30BF40 30BF40 30BF40 Replacement OPERATIONAL AMPLIFIERS 189 5303 TS522IN TS522IN TS522IN TS522IN LT1113CN8 LT1113CN8 LT1113CN8 LT1113CN8 Nearest Preferred Power Bipolar 227 3397 ESM3030DV ESM3030DV ESM3030DV ESM3030DV ESM3030DV ESM3030DV ESM3030DV ESM3030DV Replacement ULTRAFAST DIODES 275 2970 BYW99P BYW99P BYW99P BYW99P www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref.txt |
STMicroelectronics | 30/03/1999 | 445.18 Kb | TXT | xref.txt |
| Jul 94 BF 841 Jul www.datasheetarchive.com/files/siemens/img/text |
Siemens | 27/02/1997 | 189.62 Kb | text | |
| FUNCTIONAL EQUIVALENT = 1N4097 1N4097 1N4097 1N4097 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A PRELIMINARY MODEL FOR N4468 N4468 N4468 N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THE FOLLOWING SECTION CONTAINS 5 PARAMETER SETS FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THE FOLLOWING SECTION CONTAINS 8 FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A TEMPERATURE TRACKING * Library of diode model parameters * * Copyright 1989-1995 by MicroSim Corporation * Neither www.datasheetarchive.com/files/spicemodels/misc/schematics_layouts/diode.lib |
Spice Models | 17/06/1998 | 619.54 Kb | LIB | diode.lib |
| 4097 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A PRELIMINARY MODEL FOR THE SIMULATION OF THE *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THE FOLLOWING SECTION *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THE FOLLOWING SECTION *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A TEMPERATURE * Library of diode model parameters * * Copyright OrCAD, Inc. 1998 All Rights Reserved www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/diode.lib |
Spice Models | 29/07/2012 | 634.77 Kb | LIB | diode.lib |
| 4097 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A PRELIMINARY MODEL FOR THE SIMULATION OF THE *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THE FOLLOWING SECTION *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THE FOLLOWING SECTION *$ * * GENERIC FUNCTIONAL EQUIVALENT = 1N4468 1N4468 1N4468 1N4468 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A TEMPERATURE * Library of diode model parameters * * Copyright Cadence Design Systems, Inc. 2002 All Rights www.datasheetarchive.com/files/spicemodels/misc/diode.lib |
Spice Models | 09/10/2003 | 634.72 Kb | LIB | diode.lib |
| DX VCMC 105 4 DC 0.4 R2 6 9 100.0E3 RC1 4 11 8.841E3 RC2 4 12 8.841E3 RE1 13 10 4.519E3 519E3 519E3 519E3 RE2 14 102 DX DCM2 105 101 DX VCMC 105 4 DC 0.4 R2 6 9 100.0E3 RC1 4 11 8.841E3 RC2 4 12 8.841E3 RE1 13 400 DCM1 105 102 DX DCM2 105 101 DX VCMC 105 4 DC 0.4 R2 6 9 100.0E3 RC1 4 11 8.841E3 RC2 4 12 8.841 CE 12 0 1.579E-12 579E-12 579E-12 579E-12 * INTERMEDIATE GCM 0 8 12 0 2.841E-11 GA 8 0 80 90 1.131E-04 131E-04 131E-04 131E-04 R2 8 0 1.000E+05 -12 * INTERMEDIATE GCM 0 8 12 0 2.841E-11 GA 8 0 80 90 1.131E-04 131E-04 131E-04 131E-04 R2 8 0 1.000E+05 C2 1 8 3.000E www.datasheetarchive.com/files/linear/lview3/utils/spice/ltc.lib |
Linear | 01/10/1998 | 279 Kb | LIB | ltc.lib |
| DX VCMC 105 4 DC 0.4 R2 6 9 100.0E3 RC1 4 11 8.841E3 RC2 4 12 8.841E3 RE1 13 10 4.519E3 519E3 519E3 519E3 RE2 14 102 DX DCM2 105 101 DX VCMC 105 4 DC 0.4 R2 6 9 100.0E3 RC1 4 11 8.841E3 RC2 4 12 8.841E3 RE1 13 400 DCM1 105 102 DX DCM2 105 101 DX VCMC 105 4 DC 0.4 R2 6 9 100.0E3 RC1 4 11 8.841E3 RC2 4 12 8.841 CE 12 0 1.579E-12 579E-12 579E-12 579E-12 * INTERMEDIATE GCM 0 8 12 0 2.841E-11 GA 8 0 80 90 1.131E-04 131E-04 131E-04 131E-04 R2 8 0 1.000E+05 -12 * INTERMEDIATE GCM 0 8 12 0 2.841E-11 GA 8 0 80 90 1.131E-04 131E-04 131E-04 131E-04 R2 8 0 1.000E+05 C2 1 8 3.000E www.datasheetarchive.com/files/linear/lview4/utils/spice/ltc.lib |
Linear | 21/01/1999 | 279 Kb | LIB | ltc.lib |