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GP 005 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

zy 406 transistor

Abstract: GP 005 DIODE M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE M63813P/FP/GP/KPNPN7 , % toff ns ns M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE , 100 () 3 M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE 300 , 8 COMCOMMON 16P4 (P) 16P2N-A (FP) 16P2S-A (GP) 16P2Z-A (KP) LED COM OUT IN , M63813KP V mA V mA V W °C °C M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH
Mitsubishi
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M63813P M63813FP M63813GP zy 406 transistor GP 005 DIODE 16P2N M63813P/FP/GP/KP M63813P/FP/GP/KPNPN7 M63813GP/KP
Abstract: REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are , M63813P/FP/GP/KP P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer , MITSUBISHI SEMICONDUCTOR Y NAR I M63813P/FP/GP/KP ion. ange. h icat , ' FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q , COMMOM 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION -
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M63814FP

Abstract: M63814GP POWEREX MITSUBISHI SEMICONDUCTOR M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with , SEMICONDUCTOR POWEREX M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE , > POWEREX M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector , > POWEREX M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer
Mitsubishi
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M63814FP M63814GP M63814KP M63814P M63814P/FP/GP/KP

M63814FP

Abstract: M63814GP REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are , IM REL M63814P/FP/GP/KP P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED , Som IM REL M63814P/FP/GP/KP P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty , MITSUBISHI SEMICONDUCTOR Y NAR I M63814P/FP/GP/KP ion. ange. h icat , (P, FP, GP and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA
Mitsubishi
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GP 015 DIODE

Abstract: M63813FP MITSUBISHI SEMICONDUCTOR POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with , SEMICONDUCTOR POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE , 10 O7 GND INPUT 1 IN2 IN5 FEATURES q Four package configurations (P, FP, GP and KP , 8 9 Package type OUTPUT COM COMMOM 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP
Mitsubishi
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GP 015 DIODE

GP 015 DIODE

Abstract: GP 005 DIODE REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are , IM REL M63813P/FP/GP/KP P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED , MITSUBISHI SEMICONDUCTOR Y NAR I M63813P/FP/GP/KP ion. ange. h icat , (P, FP, GP and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA , ) 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Driving of digit drives of
Mitsubishi
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GP 250 DIODE

M63812KP

Abstract: M63812P > M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics , MITSUBISHI SEMICONDUCTOR M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor , FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO 35V) q , INPUT 1 IN2 8 OUTPUT COM COMMOM 9 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP
Mitsubishi
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M63812 KP300 M63812P/FP/GP/KP

M63812

Abstract: 16P2Z-A ARRAY> POWEREX M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED , POWEREX M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL , POWEREX MITSUBISHI SEMICONDUCTOR M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe , O6 IN7 FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage
Mitsubishi
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CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 KTA1505S SMD TYPE GP Transistor GP Transistor BC848B, BC858B BC848B, BC858B ZENER Diode ZENER Diode OPTION TUNER Pre AMP OPTION IF Back Jack RCA In/Out VIF SAW S/W A/V IN A/V OUT , /+5V A/+3.3V A/+13V A/+125V OPTION SIF S/W & SIF IC AUDIO MSP AMP GP Transistor GP , ) KTD1028(Hihg hFE) KTB772 KTB772 GP Transistor GP Transistor FBT PW Transistor PW Transistor PW Transistor PW Transistor KTC945B, KTA1281 KTC945B, KTA1281 Bridge Diode Bridge Diode
KEC
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CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KRC102M KRC112M KTN2369 KTC3194 KTC3197 KTC3198

Mitsubishi M54564

Abstract: M54534 M54523P/FP M54525AGP M54526P/FP M54532P/FP M54585P/FP/KP M54666P M63823P/FP/GP M63826P/FP/GP , M54577P M63802P/FP/GP/KP M63803P/FP/GP/KP M63804P/FP/GP/KP M63805P/FP/KP M63806P/FP/KP M63807P/FP/KP M63812P/FP/GP/KP M63813P/FP/GP/KP M63814P/FP/GP/KP M63815P/FP/KP M63816P/FP/KP M63817P/FP/KP M54560P , 4525 3802 3823 A P GP KP FP Package type.P : DIP type FP/GP : SOP type KP : SSOP type , ) operation diode Input diode 1 M54513P 18P4G 8 k k H Sink 50 40 k k
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Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54585P/FP 51MIN 16P2S 05MIN 16P2Z 20P2N

TB164

Abstract: gP DIODE 8.0 0 0.05 0.1 0.15 Pin in Watts 0.2 0.25 0.3 RF input 2 ohms G.P. diode 4.3pF 0.01uF 2.2kohms 10k ohm multi-turn POT G.P. diode 2 turn coil ID , Efficiency @ 2.2W=23% 10.5 0.5 0.0 10.0 0 0.05 0.1 0.15 Pin in Watts 0.2 0.25 , Efficiency @ 1.5W=15% 0.5 9.5 0.0 9.0 0 0.05 0.1 0.15 0.2 0.25 0.3 Pin in Watts
Polyfet RF Devices
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S8201 TB164 gP DIODE 12W15 TB-164 250MH 512MH 30-512M

CV7040

Abstract: cv8790 100 1.3 40 20 0.05 14 Lead N TID141N Dual 4-Diode Common Cathode 500 1.3 60 40 0.1 14 Lead N TID142N Dual 4-Diode Common Cathode 100 1.3 40 20 0.05 14 Lead N TID143N Dual 4-Diode Common Anode 500 1.3 60 40 0.1 14 Lead N TID144N Dual 4-Diode Common Anode 100 1.3 40 20 0.05 14 Lead N TID121 8- Diode , 0.1 14 Lead N TID136N 16-Diode (C.C. and C.A.) 100 1.3 40 20 0.05 14 Lead N TID129 Dual 10-Diode , 150 0.9 30 100 150 â'" â'" High current GP diode CV7332 IS922 DO-35 150 160 0.8 30 100 150 â'" â
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OCR Scan
BAV47 IS920 IS923 CV7040 CV7875 CV8617 cv8790 BY 225 diode OA202 equivalent DO-35 silicon Rectifier diodes 1S111 1S113 1S120 1S121 1S130 1S131

3SK73

Abstract: 3SK121 S-MINI MINI 1SV308 JDP2S01E JDP2S04E Single PIN Diode 1SV128 USC AGC , S-MINI 1SV225 1SV228 JDV3C11 Single S-MINI 1SV160 Tuning AFC Varicap Diode 1SV252 , JDP2S02T S-MINI PIN Diode 1SV128 USC AGC 1SV312 JDP4P02U 1SV101 , Diode Tuning S-MINI (double type) 1SV242 USC 1SV214 ESC 1SV278 USC 1SV216 UHF AFC Diode VHF to UHF SMQ 3SK195 3SK225 3SK226 3SK292 USQ 3SK259 3SK257 3SK258
Toshiba
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2SC2328 3SK73 3SK78 3SK101 3SK112 3SK114 3SK121 S-AV24 TOSHIBA RF Power Module S-AV24 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923

mos 4069

Abstract: +/-0.05 1 1.0+/-0.05 FEATURES 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp , (dBm) 20 25 60 50 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Idd Gp Pout 50 40 30 20 10 , 30 25 20 15 10 5 0 0 5 10 15 Pin(dBm) 20 25 D Idd Gp 60 50 40 30 20 10 0 6 5 4 3 2 1 0 0 0.05 , 0.05 0.1 0.15 Pin(W) 0.2 0.25 0.3 0 50 5 4 3 2 1 0 Gp 40 30 20 10 Idd 0 0 5 10 15 Pin , 3 2 1 Idd 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Gp Gp 40 30 20 40 30 20 10 0 Idd 10 15
Mitsubishi
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mos 4069 RD04HMS2 175MH 950MH VHF/UHF/890-950MH UHF/890-950MH
Abstract: =5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode , 10 15 Pin(dBm) 20 6 60 5 4 40 3 30 Gp Idd 10 0 0 0.05 0.1 , Pout 5 50 4 40 3 30 Gp 2 20 Idd 1 10 0 0 0 0.05 0.1 , D 70 60 50 4 40 3 30 Gp 1 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 , 6 60 D 0.05 7 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) Pout 10 Pin-Po Mitsubishi
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RD04HMS2

Abstract: Handling Precautions for MOSFET protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high , 6 5 4 3 2 1 0 0 0.05 0.1 0.15 Pin(W) 0.2 0.25 0.3 Idd Gp Pout Gp 50 40 30 20 10 0 40 30 , 20 10 0 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Idd Gp Pout 50 40 30 20 10 0 , Drain Effi(%) 60 50 Pout 40 30 Gp 20 10 Idd 0 0.05 0.1 0.15 Pin(W) 0.2 0.25 0.3 0 50 5 4 3 2 1 , 5 4 3 2 1 0 0 0.05 0.1 50 40 30 Gp 20 10 Idd 0 0.25 0.3 10 15 Pin(dBm) 20 25
Mitsubishi
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Handling Precautions for MOSFET 043mm 14dBtyp

MMHZ5270BPT

Abstract: GP 52b DIODE 39 43 46 52 56 62 68 69 Outline No. 225 mW 5% SURFACE MOUNT POWER ZENER DIODE , 2.1 2.0 1.8 1.7 1.5 1.4 1.4 Add the "GP" after part number to stand for Halogens-free 1-25 , POWER ZENER DIODE MMSZ5221SPT MMSZ5222SPT MMSZ5223SPT MMSZ5224SPT MMSZ5225SPT MMSZ5226SPT , 1.4 Add the "GP" after part number to stand for Halogens-free 1-26 SC-79 Equivalent , DIODE MMPZ5221BPT MMPZ5222BPT MMPZ5223BPT MMPZ5224BPT MMPZ5225BPT MMPZ5226BPT MMPZ5227BPT
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MMHZ5270BPT GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5250BPT CHPZ10VPT CHPZ11VPT CHPZ12VPT CHPZ13VPT CHPZ14VPT CHPZ15VPT

RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 =950MHz 2. Integrated gate protection diode 1.0+/-0.05 FEATURES 2 INDEX MARK (Gate) Terminal , 70 30 0.1 8 80 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 9 90 35 0.05 , 60 D 0.05 7 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) Pout 10 Pin-Po , 15 Pin(dBm) 20 20 Gp 10 Idd 0 0 0 25 0 0 0.05 0.1 0.15 0.2 Pin , ), Idd(A) 7 D 5 Pout(dBm) ,Gp(dB), Idd(A) 0.1 D Pout 20 0 0.05 Pin-Po
Mitsubishi
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JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 Diode mark 1445 RD04HMS

RD02MUS2

Abstract: diode Pout>2W, Gp>16dB INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output , specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. 1 2 3.5+/-0.05 (0.22) 2.0+/-0.05 3 (0.25) (0.25) FEATURES ·High power gain: @Vdd=7.2V,f , containing more than85% lead.) Publication Date : Oct2011 1 (0.22) 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
Mitsubishi
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RD02MUS2 520MH RD02MUS2-101

darlington array

Abstract: ULN7003A Dwg. GP-018B SWITCHING DELAY TEST CIRCUIT V in 50% 50% 0 A Zener diode can be used to , diode flyback techniques are used. The increased flyback voltage provides a much faster inductive load , Zener voltage plus the load supply voltage plus the internal diode forward voltage must not exceed the , V CC V CE(SAT) OUTPUT CURRENT I OUT IC ZENER CLAMP V in DIODE CLAMP I CEX , - 2.7 V - 15 25 pF Turn On, IC = 250 mA - 0.05 1.0 µs Turn Off
Allegro MicroSystems
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ULN7003A ULN7003LW darlington array ULN-7003A flyback bsc ULN7003A/LW MA-001-16A MA-008-16A
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