GMM7322110CMS/SG-6/7/8 GMM7322110CMS/SG GMM7322110CMS GMM7322110CMSG - Datasheet Archive

 

LG Semicon Co.,Ltd. 2,097,152 WORDS x 32 BIT CMOS EDO DYNAMIC RAM MODULE Description The GMM7322110CMS/SG is a 2M x 32 bits

 

GMM7322110CMS/SG-6/7/8 GMM7322110CMS/SG-6/7/8 LG Semicon Co.,Ltd. 2,097,152 WORDS x 32 BIT CMOS EDO DYNAMIC RAM MODULE Description The GMM7322110CMS/SG GMM7322110CMS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces of 2M x 8bit EDO DRAMs in 28 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7322110CMS/SG GMM7322110CMS/SG is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an image memory systems, and to the others which are requested compact size. The GMM7322110CMS/SG GMM7322110CMS/SG provides common data inputs and Extended Data outputs. GMM7322110CMS/SG GMM7322110CMS/SG (Single Side) Features * 72 pins Single In-Line Package - GMM7322110CMS GMM7322110CMS : Solder plating - GMM7322110CMSG GMM7322110CMSG : Gold plating * Extended Data Out (EDO) Mode Capability * Single Power Supply * Fast Access Time & Cycle Time (Unit: ns) tRAC tCAC tRC tHPC GMM7322110CMS/SG-6 GMM7322110CMS/SG-6 60 15 104 25 GMM7322110CMS/SG-7 GMM7322110CMS/SG-7 70 18 124 30 GMM7322110CMS/SG-8 GMM7322110CMS/SG-8 80 20 144 35 1 * Low Power Active : 2,640/2,420/2,200 mW (MAX) Standby : 22mW (CMOS level : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 2048 Refresh Cycles/ 32ms Pin Configuration (Top View) 36 Pin Symbol Pin Symbol Pin Symbol 37 72 Pin Symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 VCC NC A0 A1 A2 A3 A4 A5 A6 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 NC VCC A8 A9 NC RAS2 NC NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 NC NC VSS CAS0 CAS2 CAS3 CAS1 RAS0 NC NC WE NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 VCC DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC VSS 1 LG Semicon GMM7322110CMS/SG GMM7322110CMS/SG Block Diagram RAS0 RAS CAS CAS0 OE M0 WE CAS OE I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O16 I/O16 I/O17 I/O17 I/O18 I/O18 I/O19 I/O19 I/O20 I/O20 I/O21 I/O21 I/O22 I/O22 I/O23 I/O23 A0 -A10 RAS CAS1 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 M1 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O10 I/O11 I/O11 I/O12 I/O12 I/O13 I/O13 I/O14 I/O14 I/O15 I/O15 I/O24 I/O24 I/O25 I/O25 I/O26 I/O26 I/O27 I/O27 I/O28 I/O28 I/O29 I/O29 I/O30 I/O30 I/O31 I/O31 WE A0 -A10 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 A0 - A10 M0-M3 *M0-M3 : 2M x 8 EDO DRAM M0-M3 *C0-C3 : 0.22uF Capacitor C0-C3 2 WE CAS RAS2 CAS2 OE RAS M3 A0 -A10 WE WE VSS M2 A0 -A10 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 VCC RAS CAS OE CAS3 LG Semicon GMM7322110CMS/SG GMM7322110CMS/SG Pin Description Pin A0-A10 A0-A10 Function Address Inputs Pin Function PD1-PD4 Presence Detect Data Input/Output VCC Power (+5V) RAS0, RAS2 Row Address Strobe VSS Ground CAS0-CAS3 Column Address Strobe NC No Connection DQ0-DQ31 DQ0-DQ31 WE Read/Write Enable Presence Detect Pins (Optional) Pin 60ns 70ns 80ns PD1 NC NC NC PD2 NC NC NC PD3 NC VSS NC PD4 NC NC VSS Absolute Maximum Ratings* Symbol Parameter Rating Unit 0 ~ 70 C TA Ambient Temperature under Bias TSTG Storage Temperature (Plastic) -55 ~ 125 C VIN/VOUT Voltage on any Pin Relative to VSS -1.0 ~ 7.0 V VCC Power Supply Voltage -1.0 ~ 7.0 V IOUT Short Circuit Output Current 50 mA PD Power Dissipation 4 W *Note: 1. Stress greater than above "Absolute Maximum Ratings" may cause permanent damage to the device. Recommended DC Operating Conditions (TA = 0 ~ 70C) Symbol Parameter Min Typ Max Unit Note VCC Supply Voltage 4.5 5.0 5.5 V 1 VIH Input High Voltage 2.4 - 6.5 V 1 VIL Input Low Voltage -1.0 - 0.8 V 1 *Note: 1. All voltages referenced to VSS. 3 LG Semicon GMM7322110CMS/SG GMM7322110CMS/SG DC Electrical Characteristics (VCC = 5V+/-10%, TA = 0 ~ 70C) Symbol Parameter Min Max Unit VOH Output Level Output "H" Level Voltage (IOUT = -5mA) 2.0 VCC V VOL Output Level Output "L" Level Voltage (IOUT = 4.2mA) 0 0.4 V ICC1 Operating Current Average Power Supply Operating Current (RAS, CAS, Address Cycling: tRC = tRC min) 60ns - 480 70ns - 440 80ns - 400 - 8 Note ICC2 ICC3 Standby Current (TTL) Power Supply Standby Current (RAS, CAS = VIH) mA mA ICC5 ICC6 ICC7 II(L) IO(L) RAS Only Refresh Current Average Power Supply Current RAS Only Mode (RAS Cycling, CAS = VIH, tRC = tRC min) 60ns - 480 70ns - 440 80ns - 400 Extended Data Out Mode Current Average Power Supply Current EDO Page Mode (RAS = VIL, CAS, Address Cycling: tHPC = tHPC min) 60ns - 480 70ns - 440 80ns - 400 - 4 60ns - 480 70ns - 440 80ns ICC4 1, 2 - 400 - 20 mA Input Leakage Current Any Input (0V