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Part : GM71C4256BJ-70 Supplier : LG Innotek Manufacturer : America II Electronics Stock : 3,000 Best Price : - Price Each : -
Part : GM71C4256BJ-60 Supplier : - Manufacturer : Chip One Exchange Stock : 1,118 Best Price : - Price Each : -
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GM71C4256 Datasheet

Part Manufacturer Description PDF Type
GM71C4256 GoldStar 262144 word x 4 Bit CMOS DRAM Scan
GM71C4256 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
GM71C4256-10 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256-12 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256-85 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256A GoldStar 262144 word x 4 Bit CMOS DRAM Scan
GM71C4256A-10 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan
GM71C4256A-10 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256A-12 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256A-60 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256A-70 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256A-80 LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256A-80 LG Semicon 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256AL LG Semicon 262,144 WORD x 4 BIT CMOS DYNAMIC RAM Scan
GM71C4256AL-10 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan
GM71C4256AL-60 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan
GM71C4256AL-70 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan
GM71C4256AL-80 GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan
GM71C4256ALSJ GoldStar 262144 WORD x 4-Bit CMOS DYNAMIC RAM Scan
Showing first 20 results.

GM71C4256

Catalog Datasheet MFG & Type PDF Document Tags

GM71C4256

Abstract: GM71C4256-12 Ordering Information Type NO. Access Time PKG GM71C4256-85 85 ns 300 MIL GM71C4256-10 100 ns 20 PIN GM71C4256-12 120 ns PLASTIC DIP GM71C4256SJ-85 85 ns 300 MIL GM71C4256SJ-10 100 ns 26 (20) PIN GM71C4256SJ-12 120 ns PLASTIC SOJ GM71C4256Z-85 85 ns 400 MIL GM71C4256Z-10 100 ns 20 PIN G M71C4256Z , ,6,7) SYMBOL PARAMETER GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN , (GM71C4256-85) 70mA MAX. Operating (GM71C4256-12) 3mA MAX. Standby _ â'¢ Read-Modify-Write, RAS-only refresh
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I/02C

GM71C4256-10

Abstract: 1/01 ~ I/04 Vcc Vss NC Ordering Information Type NO. GM71C4256-85 GM71C4256-10 GM71C4256-12 GM71C4256SJ-85 GM71C4256SJ-10 GM71C4256SJ-12 GM71C4256Z-85 GM71C4256Z-10 GM71C4256Z-12 Access Time 85 ns , tOFF AC Operating Conditions GM71C4256-85 GM71C4256-10 GM71C4256-12 PARAMETER Random , ~ 70°C) Unit : nS (Note 5, 6, 7) GM71C4256-85 GM71C4256-10 GM71C4256-12 SYMBOL twCH twCR twp tRWL , Fast Page Mode Cycle Time 190 220 65 75 · Low Power 95mA MAX. Operating (GM71C4256-85) 70mA MAX
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402A7S7 T-90-20

GM71C4256B

Abstract: MQ5A ns 20 (26) Pin GM71C4256B J/BLJ-80 80 ns Plastic SOJ GM71C4256BZ/BLZ-60 60 ns 400 Mil GM71C4256BZ , @ LG Semicon. Co., LTD. Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C4256B/BL offers Fast Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71C4256B/BL to be packaged in a
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MQ5A GM71C4256B/BL GM71C4256B/BL-60 GM71C4256B/BL-70 GM71C4256B/BL-80 4G2A757 00DS304
Abstract: DIP GM71C4256SJ-85 GM71C4256SJ-10 GM71C4256SJ-12 85 ns 100 ns 120 ns 300 MIL 26 (20) PIN PLASTIC SOJ G M 71C4256Z-85 GM71C4256Z-10 GM71C4256Z-12 85 ns 100 ns 120 ns 400 MIL 20 PIN , (Vcc = 5V ±10%, Ta = 0 ~ 70°C) Unit : nS (Note 5, 6, 7) GM71C4256-85 GM71C4256-10 GM71C4256-12 , Operating Conditions GM71C4256-85 GM71C4256-10 GM 71C4256-12 SYMBOL PARAMETER MIN MAX , 35 40 160 190 220 55 65 75 â'¢ Low Power 95m A MAX. O perating (GM71C4256-85 -
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71C4256

GoldStar

Abstract: GM71C4256-85 GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN MAX 'WCH Write Command Hold , Power 330mW MAX. Operating (GM71C4256-85) 274mW MAX. Operating (GM71C4256-12) 16.5mW MAX. Standby â , AC Operating Conditions (VCC=5V+10%, TA=0~70°C) (Note 5,6,7) SYMBOL PARAMETER GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN MAX fRC Random Read/Write Cycle Time 165 â , GOLD STAR CO., LTD. GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C4256 is
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GoldStar RAS 0510 connection diagram 104 csk 14 tv goldstar RAS 0510 144X4 1/02C T-Y6-23-/7 GM71C4256-1

RAS 0510 connection diagram

Abstract: RAS 0510 (Note 5,6,7) SYMBOL PARAMETER GM71C4256-85 GM71C4256-10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX , (GM71C4256-85) 274mW MAX. Operating (GM71C4256-12) 16.5mW MAX. Standby Output unlatched at cycle end allows , ) SYMBOL PARAMETER GM71C4256-85 GM7104256*10 GM71C4256-12 UNIT NOTES MIN MAX MIN MAX MIN MAX *RO , GOLD STAR CO., LTD. GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C4256 is the new generation dynamic RAM organized 262,144X4 Bit. The GM71C4256 utilizes GoldStar's silicon Gate
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40267 GOLDSTAR TECHNOLOGY INC OODS57

GM7IC4256

Abstract: 71c4256 -60 GM71C4256B/BL-70 GM71C4256B/BL-80 GM71C4256B J/BL J-60 GM71C4256BJ/BL J-70 GM71C4256B J/BL J-80 GM71C4256BZ , LG Semicon Co.,Ltd. GM71C4256B / GM71C4256BL 262,144 W ORDS x 4 BIT CMOS DYNAM IC RAM Description The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM 71C4256B/BL has , Time & Cycle Time (Unit: ns) tRAC tcA C tRC tp c GM71C4256B/BL-60 GM71C4256B/BL-70 GM71C4256B/BL , GM71C4256B/BL Pin Description Pin A0-A8 RÂS CAS WE ÔË Function Address Inputs Row Address Strobe
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GM7IC4256

msm-561

Abstract: TC5118160 New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256 Siemens HYB511000 HYB51426 Texas Instr , MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai
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HY514260 HY514264 msm-561 TC5118160 TMS444000 msm561 M5M418165 M5M418160 TMS4C1024 TMS44C256 TC511000 TC514256 MB814100 MB814400

CX20106A

Abstract: GL7805 MB81C78A GM71C1000 GM71C256 GM71C4256 GM71C4256A GM71C464 GM76C256 GM76C28 GM76C88 GM76C88L 4
GoldStar
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GL317 GL348 GL386 LA7830 GL1150 GL1151 CX20106A GL7805 GL7809 GAS105 2SB474 GD75188 GD75189 DS1488 DS1489

sn76131

Abstract: tlo72cp GM71C4256A-12 120 ns PLASTIC DIP GM71C4256ASJ-80 80 ns 300 MIL GM71C4256ASJ-10 100 ns 20 PIN (26)- GM71C4256ASJ-12 120 ns PLASTIC SOJ GM71C4256AZ-80 80 ns 400 MIL G M 71C4256A2-10 100 ns 20 PIN G M , 0 ~ 70°C) Unit : nS (Note 5, 6, 7) SYMBOL GM71C4256A-80 GM71C4256A-10 GM71C4256A-12 UNIT NOTES , ) 303mW MAX. Operating (GM71C4256A-10) 259mW MAX Operating (GM71C4256A-12) 11 mW MAX. Standby_ â , PARAMETER G M 71C4256A-80 GM71C4256A-10 GM71C4256A-12 UNIT NOTES MIN MAX MIN MAX MIN MAX tflC
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sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510

71C4256

Abstract: 71c4256a -46-23-17 GoldStar gm7ic4256a/al Read Cycle Symbol Parameter GM71C4256AML-60 GM71C4256A/AL-70 GM71C4256A/AL , Plastic DIP GM71C4256A/AL-10 100ns GM71C4256ASJ/ALSJ-60 60ns 300 Mil GM71C4256ASJ/ALSJ-70 70ns 20 (26) Pin GM71C4256ASJ/ALSJ-80 80ns Plastic SOJ GM71C4256ASJ/ALSJ-10 100ns GM71C4256AZ/ALZ-60 60ns 400 , GOLDSTAR TECHNOLOGY INC/ 47E D 4Q2Ã"757 GGG3415 7 «GST GM71C4256A/AL 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM71C4256A/AL is the new generation dynamic RAM organized 262,144 x
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71c4256a 71C4256AZ-12 C4256A

GM7IC4256A

Abstract: 71c4256a MEMORY LINE-UP l.D R A M 60ns I IM H - I IMxl |GM71C1000B-60 I GM71C 1OO0BJ-60 GM71C 1000BZ-60 GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 - I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 GM71C4256BZ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 70ns ZZH H h GM71C1000B-70 GM71C1000BJ-70 GM71CIO0OBZ-70 GM71C1000BU70 GM71C1000BU-70 GM71C1000BLZ-70 GM71C4256B-70 GM71C42Î6BJ-70 GM71C4Î56BZ-70 GM71C4256BL-70 GM71C4256BU-70 GM71C4256BLZ-70 = ] [ H H 80n> GM71C1000B-80 GM
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GM7IC4256A GM7IC GoldStar 4256a GM7IC4256A/AL-70 battery itec C4256 GM71C4256A/AL GM71C-4256A/AL GM71C4256A/AL-60 GM71C4256A/AL-70 GM71C4256A/AL-80 GM71C4256A/AL-10

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4256B-60 GM71C4256B-70 - 1 G M 71C4256B-80 ÜM71C4256BJ-60 CiM71C4256B/.-60 GM71C4256B1.-60 G , h ]-[ G M 71C4256BJ-80 OM 71C4256BZ :-so - 1 GM71C4256BL-70 G M 71C42 56B IJ-70 GM
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GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 GM71C1000BJ70 gm71c4100cj60 1C1000BJ-80 1C1000BZ-80 1C1000BL-80 1C1000BU-80 1C1000BLZ-80 1C42S6B-80

GM71C4400BJ70

Abstract: GM71C4400BLT70 . GM71C4256A-80 GM71C4256A-10 GM71C4256A-12 GM71C4256ASJ-80 GM71C4256ASJ-10 GM71C4256ASJ-12 GM71C4256AZ-80 G , )_ GM71C4256A-80 GM71C4256A-10 MIN MAX GM71C4256A-12 MIN MAX SYMBOL tRC tRWC tpc tPCM tRAC tcAC , 385mW MAX. Operating (GM71C4256A-80) 330mW MAX. Operating (GM71C4256A-10) 275mW MAX. operating (GM71C4256A-12) 11 mW MAX. Standby_ 20 Lead Plastic ZIP · Read-Modify-Write, RAS-only refresh, CAS Before , 3 GST GM71C4256A (Vcc = 5 V ± 1 0 % , GM71C4256A-80 GM71C4256A-10 MIN 20 15 25 25 0 20 MAX
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GM71C4400BLT70 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80

72ZZZZ

Abstract: GM71C4256A-80 PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C(S)4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL G M 71C(S) 18160A/AL GM71V(S)16160A/AL GM 71V(S) 18160A/AL IM 256K 4M 4M 4M IM IM IM 512K 256K 256K 256K 16M 4M 4M IM IM IM IM Bit Dynamic RAM . 51 Bit Dynamic RAM . 69 Bit Dynamic RAM
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OCR Scan
72ZZZZ GM71C4256A80 72ZZZZZZZZZZZ2

4170A

Abstract: mask ROM NO. Access Time PKG GM71C4256A-80 GM71C4256A-10 GM71C4256A-12 80 ns 100 ns 120 ns , °C) (Note 5, 6, 7) GM71C4256A-80 PARAMETER SYMBOL tRC GM71C4256A-10 GM71C4256A-12 MIN M , : nS (Note 5, 6, 7) GM71C4256A-80 PARAM ETER SYMBOL GM71C4256A-10 GM71C4256A-12 MIN , 120 ns 300 MIL 20 PIN (26)PLASTIC SOJ G M 71C4256AZ-80 GM71C4256A2-10 GM71C4256AZ-12 80 ns , (GM71C4256A-10) 259m W MAX O perating (GM71C4256A-12) 11mW MAX. Standby_ 7^0 â'¢ Read-M odify-W rite
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4170A mask ROM STATIC+RAM+6264 71C4400B Dynamic RAM 4M x 8 64K x 8 BIT DYNAMIC RAM GM23C1000 GM23C2000 GM23C4000A GM23C4100A GM23C8000A GM23C8100A
Abstract: GM71C4256B/BJ/BZ-60 GM71C4256B/BJ/BZ-70 GM71C4256B/BJ/BZ-80 GM71C4256BU8 LJ/BLZ-60 GM71C42568L/8LJ/BLZ-70 GM71C42568UBLJ/BLZ-80 4MBit 4Wt1 GM71C4100B J/BZ/BT/BR-60 GM71C41008J/BZ/BT/BR-70 GM71C4100BJ/BZ/BT/BR -
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777Z/////77777J

GM76C256all

Abstract: GMM794000BS70 GM71C4256A/AL GoldStar 262,144 WORDSx 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4256A/AL is the new generation dy­ â'¢ 262,1 4 4 x 4 Bit Organization , 4256A/AL offers Fast Page Mode as a high speed GM71C4256A/AL-60 60 20 120 45 access mode. Multiplexed address inputs permit GM71C4256A/AL-70 50 70 20 130 the GM71C4256A/AL to be packaged in a stan­ GM71C4256A/AL-80 dard 20 pin DIP, SOJ and ZIP. The package size 55 80 25 160 provides high
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LR-80 GM23C410 GM23C810QA-12 GM76C256all GMM794000BS70 GM71C18160A GM23C400 GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 18DIP
Abstract: /AL-80 GM71C4256A/AL-10 60ns 70ns 80ns 100ns 300 Mil 20 Pin Plastic DIP GM71C4256ASJ , GM71C4256A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A/AL is the new generation dy­ namic RAM organized 262,144 x 4 Bit. GM71C4256AJAL has realized higher density, higher per­ formance and various functions by utilizing ad­ vanced CMOS process technology. The GM71C4256A/AL offers Fast Page Mode as a high speed access mode -
OCR Scan
GM71C-
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