NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| GI3055 | GTM Corporation | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
5 pages, |
Original |  |
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| GI3055S | GTM Corporation | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
5 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C 2007/01/25C GI3055 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 26m 15A Description The GI3055 , /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GI3055 Page: 1/5 , 300us, duty cycle 2%. GI3055 Page: 2/5 ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C 2007/01/25C , v.s. Case Temperature GI3055 Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. ... | Original |
5 pages, |
GI3055 2007/01/25C 2007/01/25C abstract |
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| Abstract: Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B 2006/11/09B GI3055S BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 25m 18A Description The GI3055S , /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GI3055S Page: 1/5 , limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GI3055S Page: 2/5 ISSUED , Temperature GI3055S Fig 2. Transfer Characteristics Fig 4. On-Resistance v.s. Junction Temperature ... | Original |
5 pages, |
GI3055S 2006/11/09B 2006/11/09B abstract |
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