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SEP8706-003 Honeywell Sensing and Control SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package ri Buy
SME2470-021 Honeywell Sensing and Control SME2470 Series Infrared Emitting Diode, Surface-mount Package, Glass Lens ri Buy
SEP8505-002 Honeywell Sensing and Control SEP8505 Series GaAs Infrared Emitting Diode, T-1 Package ri Buy

GI 312 diode

Catalog Datasheet Results Type PDF Document Tags
Abstract: Vrms Isolation test voltage Type 2 . IPS 3-05-T 3-05-T . IPS 3-12-T . IPS 3-15-T 3-15-T . IPS 3-0505-T 3-0505-T . IPS , 2 . CPS 3-05-T 3-05-T . CPS 3-12-T . CPS 3-15-T 3-15-T . CPS 3-0505-T 3-0505-T . CPS 3-1212-T 3-1212-T . CPS 3-1515-T 3-1515-T Option , Type 2 . IPW 3-05-T 3-05-T . IPW 3-12-T . IPW 3-15-T 3-15-T . IPW 3-0505-T 3-0505-T . IPW 3-1212-T 3-1212-T . IPW 3-1515-T 3-1515-T . IPW , higher than 60 V by external means, e.g. an overvoltage suppressor diode. Has to be insulated from earth , 1.25 I i 30 open or 8.10 ­0.3.+2 +1.+5 ­25.­35 130 . IPS/IPW 3-12 . min 10 18 0 0 5 3 1.3 ... Original
datasheet

7 pages,
159.93 Kb

MELCHER THE POWER PARTNERS diode gi 810 IBEK 48 ips 3-05 t GI 312 diode IBEK 24 IPS 3-05-05-T IBEK 24 IPS 3-05 ibek 48 ips 3-05-12-t IBEK 24 IPS 3-1515-T datasheet abstract
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Abstract: . IPS 3-12-T . IPS 3-15-T 3-15-T . IPS 3-0505-T 3-0505-T . IPS 3-1212-T 3-1212-T . IPS 3-1515-T 3-1515-T . . . . . IPS , e 2 . CPS 3-05-T 3-05-T .CPS 3-12-T .CPS 3-15-T 3-15-T . CPS 3-0505-T 3-0505-T .CPS 3-1212-T 3-1212-T .CPS 3-1515-T 3-1515-T O ption , voltage Type2 01 . IPW 3-05-T 3-05-T . IPW 3-12-T . IPW 3-15-T 3-15-T . IPW 3-0505-T 3-0505-T . IPW 3-1212-T 3-1212-T . IPW , means, e.g. an overvoltage suppressor diode. 3 Has to be insulated from earth by at least basic , ±10 Uì m in -.M m ax lo nom-0.25 lo nom M nom , lo nom 0.5 ±0.02 typ ·'îex 5.10 . IPS/IPW 3-12 ... OCR Scan
datasheet

7 pages,
570.45 Kb

MELCHER dc dc converter IBEK 24 IPS 3-05-05-T IBEK 48 ips 3-05 t IBEK 24 IPS 3-1515-T GI 312 diode IBEK 24 IPS 3-05 datasheet abstract
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Abstract: BUK638-800A/B BUK638-800A/B PowerMOS transistor Fast recovery diode F ET PHILIPS INTERNATIONAL SbE D - 711DflSh GDH473T GDH473T 312 - Philips Components Data sheet status Preliminary specification date of issue March 1991 , REDFET with fast recovery reverse diode, particularly suitable for motor control applications, eg. in , power dissipation 220 220 W ^DS(ON| Drain-source on-state 1.8 2.4 n resistance t* Diode reverse , specification PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL THERMAL RESISTANCES From ... OCR Scan
datasheet

5 pages,
173.77 Kb

GDH473T BUK638-800A BUK638 K638 GI 312 diode BUK638-800A/B BUK638-800A/B abstract
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Abstract: ?q5qS3? 0055553 1 - 3-ZPi SCS-THOMSON 0(gi®i[L[IOT(ò»(gS BU801 BU801 S G S-TH0MS0N 3QE D HIGH VOLTAGE FAST DARLINGTON DESCRIPTION The BU801 BU801 is a silicon epitaxial planar NPN Darlington transistor with integrated base-emitter speed-up diode, mounted in Jedec TO-126 plastic package. It Is particularly suitable , Junction-case_Max 3.12 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) Symbol Parameter , hfe* DC Current Gain lc = 200 mA Vce = 3 V 100 VF* Diode Forward Voltage lF = 1 A 4 V RESISTIVE ... OCR Scan
datasheet

4 pages,
183.75 Kb

BU801 BU801 abstract
datasheet frame
Abstract: On-State Resistance © IRF820R IRF820R IRF821R IRF821R - 2.5 3.0 Q Vgs = 10V, lo = 1.OA IRF822R IRF822R IRF823R IRF823R - 3.0 4.0 Q gi , Resistance RthJC Junction-to-Case ALL - - 3.12 °c/w RitiCS Case-to-Sink ALL _ 1.0 - -°c/w Mounting , Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (Body Diode) IRF820R IRF820R , go-^Jip) s IRF822R IRF822R IRF823R IRF823R - - 2.0 A Ism Pulse Source Current (Body Diode) © IRF820R IRF820R IRF821R IRF821R - - 10 A IRF822R IRF822R IRF823R IRF823R - - 8.0 A Vso Diode Forward Voltage © IRF820R IRF820R IRF821R IRF821R - - 1.6 V Tc = 25°C ... OCR Scan
datasheet

5 pages,
188.89 Kb

thermal impedance IRF823R IRF822R IRF822FI IRF821R IRF820R IIRF823R IRFB22 IRF820R abstract
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Abstract: Xhfíl PACKARD APPLICATION NOTE 989 Step Recovery Diode Doubler INTRODUCTION A straightforw , hich allows all of the in pu t pow er to be absorbed by the diode and reflects harm onic pow er back to the diode. The output circu it is a bandpass filte r w hich offers a low loss path to the desired frequency while reflecting all other harm onics back to the diode. where r is the lifetim e, 100 x 10-9 seconds, N is the m ultiplica tion factor, and C is the diode capacitance, 3 pF, so that Rb = 5300 ohms. ... OCR Scan
datasheet

4 pages,
576.85 Kb

HP STEP RECOVERY DIODES datasheet abstract
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Abstract: Turn-off Delay Time 61 92 ns lf Fall Time 36 71 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS , Source Current (Body Diode) APT5025AN APT5025AN / APT4525AN APT4525AN 20 Amps 's APT5030AN APT5030AN / APT4530AN APT4530AN 18 Amps i Pulsed Source Current1 (Body Diode) APT5025AN APT5025AN / APT4525AN APT4525AN 80 Amps sm APT5030AN APT5030AN / APT4530AN APT4530AN 72 Amps vsd Diode Forward Voltage2 (VQS = 0V, ls = -lD [Cont.]) 1.3 Volts *rr Reverse Recovery Time , ¡¡j| 15 ii a! gi s o 1.0 0.5 O ~th «p o.o l0-0.5 lD [ConL] v SS-'« V ... OCR Scan
datasheet

4 pages,
370.96 Kb

H3906 APT4525AN APT4530AN 4525AN APT5030AN GI 312 diode 5030AN apt5025 5025an APT5025AN datasheet abstract
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Abstract: DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number SML4030BN SML4030BN / SML3530BN SML3530BN 's MIN TYP MAX UNIT Continuous Source Current (Body Diode) 18.5 16 74 64 1.3 , / SML3530BN SML3530BN 'sM Pulsed Source Current1 (Body Diode) SML4040BN SML4040BN / SML3540BN SML3540BN V SD Diode Forward , vs PULSE DURATION 54 SEMELAB PLC bGE D Bi 0133107 GGOOblB =175 « S M L B 20 I " , , TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247AD Package Outline 4.69 (.185) '5.31 (.209) 1.49 ... OCR Scan
datasheet

4 pages,
342.54 Kb

sml3530bn 4030BN 4040BN datasheet abstract
datasheet frame
Abstract: Current (Diode Conduction) Maximum Power Dissipation T a = 25 °C © V ds Maximum -30 ± 20 -2.3 -1.8 , Current Repetitive Avalanche Energy Peak Diode Recovery d v/d t® Junction and Storage Tem perature Range , Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (D Diode Forward Voltage Reverse , reverse p-n junction diode. T j = 25°C , (s = -1.25A, VGS : T j = 25°C , M - 1 .2 5 A V sD trr = , (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage ... OCR Scan
datasheet

7 pages,
138.5 Kb

datasheet abstract
datasheet frame
Abstract: gi. Forward Transconductance © ALL 1.5 2.9 _ S(u) Vds > I Dion) X RoS(on)m«x., lo - 4.0A Cu. Input , Thermal Resistance RthJC Junction-to-Case ALL _ - 3.12 °C/W RthCS Case-to-Sink ALL - 11.0 - °C , Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (Body Diode , IRF522R IRF522R IRF523R IRF523R - - 7.0 A Ism Pulse Source Current (Body Diode) © IRF520R IRF520R IRF521R IRF521R - - 32 A IRF522R IRF522R IRF523R IRF523R - - 28 A Vsd Diode Forward Voltage © IRF520R IRF520R IRF521R IRF521R - - 2.5 V Tc = 25°C, Is = 8.0A. Vgs = 0V ... OCR Scan
datasheet

5 pages,
192.57 Kb

IRF523R IRF522R IRF521R 40CJ 30C2 IRF523 IRF520R IRF520R abstract
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* * * * Infineon Technologies Discrete & RF Semiconductors * * DIODE SPICE LIBRARY capacitance C1 3 2 670.0f *Junction diode D1 4 2 DIO1 *Reverse-bias clamp G2 0 5 4 2 1.0 D3 0 5 DIO3 73.7937m *Constant reverse-bias capacitance C1 3 2 34.0f *Junction diode D1 4 2 DIO1 *Reverse-bias *Junction diode D1 4 2 DIO1 *Reverse-bias clamp G2 0 5 4 2 1.0 D3 0 5 DIO3 V1 5 6 0.0 D4 6 0 DIO3 capacitance C1 3 2 670.0f *Junction diode D1 4 2 DIO1 *Reverse-bias clamp G2 0 5 4 2 1.0 D3 0 5 DIO3
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Answers Database Index Number of Solutions: 3125 Xilinx Answer #100 : Xilinx Libraries: All Xilinx/Viewlogic components have a LEVEL= attribute to decrease runtime Xilinx Answer #101 : Viewsim: About ? Nodes in Timing Simulations Xilinx Answer #102 : FPGA Configuration: DONE Doesn't Go High; General XC4000 XC4000 XC4000 XC4000 Debugging Hints Xilinx Answer #103 : XC4000 XC4000 XC4000 XC4000: The Five
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Xilinx 16/02/1999 433.95 Kb HTM wcd00072-v1.htm
* LTC.LIB 01/08/2007 * RELEASE 01.08.07 * A library of Linear Technology SPICE subcircuit definitions * * This library of macromodels is being supplied to LTC users as an * aid to circuit design. While the models reflect reasonably * close similarity to corresponding devices in performance terms, * their use is not suggested as a replacement for breadboarding. * Simulation should be used as a forerunner or a supplement to * traditional lab testing. * * Users should very carefully note the follow
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SGS-Thomson 08/08/1995 496.95 Kb DIC stcd0995.dic