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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

GI 312 diode

Catalog Datasheet MFG & Type PDF Document Tags

IBEK 24 IPS 3-1515-T

Abstract: IBEK 24 IPS 3-05 Vrms Isolation test voltage Type 2 . IPS 3-05-T . IPS 3-12-T . IPS 3-15-T . IPS 3-0505-T . IPS , 2 . CPS 3-05-T . CPS 3-12-T . CPS 3-15-T . CPS 3-0505-T . CPS 3-1212-T . CPS 3-1515-T Option , Type 2 . IPW 3-05-T . IPW 3-12-T . IPW 3-15-T . IPW 3-0505-T . IPW 3-1212-T . IPW 3-1515-T . IPW , higher than 60 V by external means, e.g. an overvoltage suppressor diode. Has to be insulated from earth , 1.25 I i 30 open or 8.10 ­0.3.+2 +1.+5 ­25.­35 130 . IPS/IPW 3-12 . min 10 18 0 0 5 3 1.3
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IBEK 24 IPS 3-1515-T IBEK 24 IPS 3-05 IBEK 24 IPS 3-05-05-T IBEK 48 ips 3-05 t ibek 48 ips 3-05-12-t GI 312 diode

ibek 48 ips 3-05-12-t

Abstract: IBEK 24 IPS 3-05-05-T -T . IPS 3-12-T . IPS 3-15-T . IPS 3-0505-T . IPS 3-1212-T . IPS 3-1515-T . . . . . IPS , e 2 . CPS 3-05-T .CPS 3-12-T .CPS 3-15-T . CPS 3-0505-T .CPS 3-1212-T .CPS 3-1515-T O ption , voltage Type2 01 . IPW 3-05-T . IPW 3-12-T . IPW 3-15-T . IPW 3-0505-T . IPW 3-1212-T . IPW 3-1515 , protected against overvoltages higher than 60 V by external means, e.g. an overvoltage suppressor diode. 3 , 3-12. min 11.76 250 125 100 ±12 0.21 ±0.02 13 +5/"0% 15 typ max 12.24 . IPS/IPW 3-15. min 14.70
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24IPS3 24 IPS 3-05 LT24 IBEK 5 IPS 3-12 MELCHER dc dc converter

IBEK 24 IPS 10-05-T

Abstract: ibek 48 ips 3-05-12-t 3-05-T . IPS 3-12-T . IPS 3-15-T 02 Option : ; 1: . IPS 3-0505-T . IPS 3-1212-T . , ] Input Voltage u, [V DC] - 24 CPS . 04 2 .CPS 3-05-T . CPS 3-12-T . CPS 3-15-T 05 , 10.33 (nominal 24) . IPW 3-05-T . IPW 3-12-T . IPW 3-15-T 02 Option . IPW 3-0505 , 3-12. max min 5 .10 . IPS/IPW 3-15. 11.76 max min 12.24 typ 1 4.70 , protected by a zener diode or preferably by a suppressor diode to avoid overvoltages or reverse polarity
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IBEK 24 IPS 10-05-T 00GD721

0R27

Abstract: D1 LX D GI PGND 0R ISM 11 R6 10k 1 R8 U1 IC - ZXLD1371 PWM SGND G PWM 16 PAD 15 GI D Q3 2N7002 S VIN VAUX PWM 12 L1 68uH , 60V N-Channel Enhancement Mode MOSFET â'" Diodes Inc. SOT23 FET - Diodes Zetex Freewheeling diode 5A, 100V â'" Diodes Inc. Schottky diode 1A, 40V â'" Diodes Inc. Zener, 51V 400mW SOD123 â'" Diodes Inc. Diode, 1A SMA â'" Diodes Inc Resistor 1206 1% thick film 250ppm generic Resistor 0805
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0R27 ZXLD1371EV3 A1103-04 D-81541
Abstract: GI PGND 0R 12 11 R6 10k 1 R8 U1 IC - ZXLD1371 PWM SGND G PWM 16 PAD 15 GI VIN VAUX PWM L3 10uH LX L1 33uH MSS1278 D Q3 2N7002 S , '" Diodes Inc. SOT23 FET - Diodes Zetex Freewheeling diode 5A, 100V â'" Diodes Inc. Schottky diode 1A, 40V â'" Diodes Inc. Zener, 51V 400mW SOD123 â'" Diodes Inc. Diode, 1A SMA â'" Diodes Inc Resistor , ) 215 241 4891 Shenzhen, China Tel: (+82) 312 731 884 Fax: (+49) 894 549 4949 Fax: (+886 Diodes
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ZXLD1371EV2
Abstract: ZXLD1371 D1 D GI GATE R5 10 0R ADJ REF STATUS TADJ SHP LX LX PDS5100 PWM FLAG SGND G 16 PAD 15 GI VIN VAUX PWM PWM Q1 G C11 , . SOT23 FET - Diodes Zetex Freewheeling diode 5A, 100V â'" Diodes Inc. Schottky diode 1A, 40V â'" Diodes , ) 215 241 4891 Shenzhen, China Tel: (+82) 312 731 884 Fax: (+49) 894 549 4949 Fax: (+886) 289 146 639 Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 Fax: (+82) 312 731 885 Issue Diodes
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ZXLD1371EV5
Abstract: 1 R8 0R R9 91k REF 2 3 R7 1k8 4 U1 IC - ZXLD1371 LX D1 D GI , FLAG SGND G PWM 16 PAD 15 GI VIN 11 GND VAUX PWM LX L1 68uH , Freewheeling diode 5A, 100V â'" Diodes Inc. Schottky diode 1A, 40V â'" Diodes Inc. Zener, 51V 400mW SOD123 â , ) 215 241 4891 Shenzhen, China Tel: (+82) 312 731 884 Fax: (+49) 894 549 4949 Fax: (+886) 289 146 639 Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 Fax: (+82) 312 731 885 Issue Diodes
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ZXLD1371EV6

IBEK 24 IPS 3-05

Abstract: IBEK 24 IPS 3-1515-T individual output should be protected by a zener diode or preferably by a suppressor diode to avoid , DC-DC Converters , ICR, group 06 Fig. 2 IWR, group 01 11 Linear regulator 16 23 15 +Vo Gi 12 10 , Fig. 7 ICR, group 07 ­TP Fig. 3 IWR, group 02 13 Go 11 14 +Vo 6.1 Gi 22
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ticomel inductor smd diode Coloured band marking code IBEK 24 IPS 6-05 fuse smd code ud 494LYF circuit diagram of mini ips system

IRFB22

Abstract: GI 312 diode .OA IRF822R IRF823R - 3.0 4.0 Q gi, Forward Transconductance © ALL 1.0 1.75 â'" S(O) VoS > loionl X RDS(on , '" 3.12 °c/w RitiCS Case-to-Sink ALL _ 1.0 â'" â Â°c/w Mounting surface flat, smooth, and greased. RihJA Junction-to-Ambient ALL â'" â'" 80 °c/w Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (Body Diode) IRF820R IRF821R . - - 2.5 A Modified MOSFET , Ism Pulse Source Current (Body Diode) © IRF820R IRF821R - - 10 A IRF822R IRF823R - - 8.0 A Vso
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IRF822FI IIRF823R IRFB22 thermal impedance JEDECTO-22GAB IRFS22R 92CS-4 92C5-42659

Irf7314

Abstract: Drain Current Continuous Source Current (Diode Conduction) T a = 25°C Maximum Power Dissipation  , Diode Recovery dv/dt® Junction and Storage Temperature Range qs Id Id m b Pd ^ Eas Iar , Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ® Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units â , MOSFET symbol _,d showing the n Iâ'" - j\ integral reverse a_U p i Ty p-n junction diode. â
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Irf7314 1436B IRF7314 F7101 003045G IA-541

D45 SOT23

Abstract: ? 2 SS c J3 b ] i l lO T 3-12 Motorola Small-Signal Transistors, FETs and Diodes Device , DIODE CHARACTERISTICS C ontinuous C urrent P ulsed C urrent F orw ard V o ltagei2) (1) Pulse Test: P , Device Data MGSF1N03LT1 S 0.24 150°C CO 2 I O 0.16 150°C v Gi; = 10 0.12 0.19 ¡S = 4- V , ) Figure 5. On-Resistance Variation with Temperature Figure 6. Gate Charge o LU o VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance b3b
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D45 SOT23 236AB

mth6n60fi

Abstract: ^ 7 S G S -T H O M S O N [^D(g^©[lL[l©^(S)MD(gi MTH6N60FI N - CHANNEL ENHANCEMENT , resistance junction-ambient max 3.12 62.5 °C/W °c/w ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless , CHARACTERISTICS (Continued) Parameters Test Conditions Min. Typ. Max. Unit SOURCE DRAIN DIODE lSD ' sdm , -1 0 Î.0 80 120 T j CCI Normalized on resistance vs temperature Source-drain diode forward , test circuit Body-drain diode trr measurement Jedec test circuit " 7# . BSeiBMÏB.ÏfîTWfillOi ¿
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ISOWATT218
Abstract: ) *) % I !2D6à¸'B6C:CD2?46 R= J^N[_P\[QaP`N[PR g S_ gV 9Ig5*gI 9gR 9I"\[#ZNd#8;à¸' I 9 , #24;#19;#17;à¸'/#8;à¸'V =I#24; à¸'/ K Reverse Diode #29;:@56à¸'4@?D:?@ECà¸'7@BG2B5à¸'4EBB6?D II , transconductance I 94S"V =I#7;#23;à¸'KV 9Ig5*gI 9gR 9I"\[#ZNd g S_4S"I 9#7;#23;à¸'T W#24;#14;#17;à¸'T#28; A2B2>6D6B#22;à¸'T W 50 , ] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4S"V 9I#7;#23;à¸'V =I#24; à¸'/#23;à¸'f , ,à¸'2'$à¸'27.$1à¸'(,à¸'/3$12(-,#8;à¸'.*$ 1$à¸'"-,2 "2à¸'2'$à¸',$ ;%% Infineon Technologies
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BSZ520N15NS3 492B86 D2B86D D96BG 42D68
Abstract: ,/ 1, % H !1D5à¸'B5C9CD1>35 R= I^MZ_O[ZPaO`MZOQ g R_ gV 9Hg5*gI 9gR 9H"[Z#YMd#8;à , )+* % Z_ % ,)- % Z8 V 99#24;#19;#17;à¸'.#8;à¸'V =H#24; à¸'. J Reverse Diode #29;9?45à¸'3 , . transfer characteristics 8 Typ. forward transconductance I 94R"V =H#7;#23;à¸'KV 9Hg5*gI 9gR 9H"[Z#YMd g , characteristics of reverse diode C 4R"V 9H#7;#23;à¸'V =H#24; à¸'.#23;à¸'f #24; à¸'&"J I , ¸'#29;$"',-*-&($1à¸'#26;%%("$à¸'#6; QQQ&DHADH@IH&>IG#& -,à¸'2'$à¸'27.$1à¸'(,à¸'/3$12(-,#8;à¸'.*$ 1$à¸'"-,2 Infineon Technologies
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IPB108N15N3 IPP111N15N3 IPI111N15N3 381B75 D1B75D 931D9
Abstract: !1D5à¸'B5C9CD1>35 R= I^MZ_O[ZPaO`MZOQ g R_ +5F à¸'#14; #14; gV 9Hg5*gI 9gR 9H"[Z#YMd#8;à¸' I 9 , ), % Z_ % ,1. % Z8 V 99#24;#19;#17;à¸'.#8;à¸'V =H#24; à¸'. Reverse Diode #29;9?45à¸'3?>D9 , ] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =H#7;#23;à¸'KV 9Hg5*gI 9gR , reverse diode C 4R"V 9H#7;#23;à¸'V =H#24; à¸'.#23;à¸'f #24; à¸'&"J I , ,$ ; QQQ&DHADH@IH&>IG#& -,à¸'2'$à¸'27.$1à¸'(,à¸'/3$12(- Infineon Technologies
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IPA075N15N3 CG9D389 B53D96931D9 D85BG9C5 49CC9 31D57

GI 312 diode

Abstract: sc1s3 BUK638-800A/B PowerMOS transistor Fast recovery diode F ET PHILIPS INTERNATIONAL SbE D â  711DflSh GDH473T 312 â  Philips Components Data sheet status Preliminary specification date of issue , envelope. REDFET with fast recovery reverse diode, particularly suitable for motor control applications , . Total power dissipation 220 220 W ^DS(ON| Drain-source on-state 1.8 2.4 n resistance t* Diode , Preliminary specification PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL THERMAL
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BUK638 sc1s3 K638 BUK638-800A 71100E

L53 led

Abstract: L-53-12 N E C ELECTRONI CS I NC b2E D b 4 S7 S25 0030153 4 öb « N E C E DATA SHEET NEC ELECTRON DEVICE LIGHT EMITTING DIODE N DL5302L2 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION N D L5302L2 is an InGaAsP double heterostructure 1 300 nm LED , also suitable for medium speed datalink (~ 125 Mb/s). And for GI-50/125 fiber, NDL5302L1 is , Q03A1SM 312 « N E C E NDL5302L2 TYPICAL CHARACTERISTICS (Ta *=25°C) F O R W A R D C U R R E N T
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L53 led L-53-12 I-50/125 GI-50/125 M27525 NDL5300 L5302 L5312

SGSP239

Abstract: 3QE » â  002^33 r z z SGS-THOMSON ^7#â"¢ R5ilD(g[E](s)i[L[i©¥^©iö(gi 5 'T g s-thohso_n_ SGSP239 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP239 VDss , for soldering purpose max 3.12 275 °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 , DRAIN DIODE Source-drain current 'sD 'SDM (* I Source-drain current (pulsed) Is d = 1-2 A di/dt , temperature 1 50 100 , , Tj{°C) Source-drain diode forward characteristics Is (A o
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1503C JP239

3SK73

Abstract: 3SK121 S-MINI MINI 1SV308 JDP2S01E JDP2S04E Single PIN Diode 1SV128 USC AGC , S-MINI 1SV225 1SV228 JDV3C11 Single S-MINI 1SV160 Tuning AFC Varicap Diode 1SV252 , JDP2S02T S-MINI PIN Diode 1SV128 USC AGC 1SV312 JDP4P02U 1SV101 , Diode Tuning S-MINI (double type) 1SV242 USC 1SV214 ESC 1SV278 USC 1SV216 UHF AFC Diode VHF to UHF SMQ 3SK195 3SK225 3SK226 3SK292 USQ 3SK259 3SK257 3SK258
Toshiba
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2SC2328 3SK73 3SK78 3SK101 3SK112 3SK114 3SK121 S-AV24 TOSHIBA RF Power Module S-AV24 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923

IRF621R

Abstract: zc942m0 gi. Forward Transconductance © ALL 1.3 2.5 _ S(O) VdS > IdIooI X RdSIoiiI max. Id â'" 2.5A Ciu , source bonding pad. Thermal Resistance RthJC Junction-to-Case ALL â'" â'" 3.12 °C/W RinCS , â'" â'" 80 °C/W Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (Body Diode) IRF620R IRF621R - - 5.0 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier. g s IRF622R IRF623R - - 4.0 A Ism Pulse Source Current (Body Diode
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zc942m0 zc94 IRF622IR
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