NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| GH100 | Futaba | FLAT TYPE METAL CLAD WIRE-WOUND Resistors |
1 pages, |
Original |  |
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| GH1000 | Cooper Bussmann | 1000A:550V:HRC Fuse |
1 pages, |
Original | |
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| GH1000-R | Cooper Bussmann | 1000A:550V:HRC Fuse |
1 pages, |
Original | |
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| GH1004 | GAD Semiconductors | Nanoswitch. Gallium Arsenide Power Diodes |
3 pages, |
Scan | |
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| GH1005 | GAD Semiconductors | Nanoswitch. Gallium Arsenide Power Diodes |
3 pages, |
Scan | |
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| GH1006 | GAD Semiconductors | Nanoswitch. Gallium Arsenide Power Diodes |
3 pages, |
Scan | |
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| GH101K | Cornell Dubilier | Capacitor: 100PF: 100: Y5P: 10%: 6.4: RDL |
3 pages, |
Original | |
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| GH102K | Cornell Dubilier | Capacitor: 1nF: 100: Y5P: 10%: 6.4: RDL |
3 pages, |
Original | |
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| GH103K | Cornell Dubilier | Capacitor: 10nF: 100: Y5P: 10%: 0.6: RDL |
3 pages, |
Original | |
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| GH103M | Cornell Dubilier | Capacitor: 10nF: 100: Y5U: 20%: 6.4: RDL |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: © VD3 ® Vqi,2 ® RF output ® VD2 ® GMD (FIN) GH-10 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings ... | OCR Scan |
2 pages, |
VD58 FA01314 FA01314 abstract |
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| Abstract: X7RA GH10 GH15 GH20 GH25 GH35 GH50 GH70 GH90 484 484 400/625 400/625 400/625 256 256 100 , 6N = Antistatic waffle pack Single Layer Capacitor Selection Chart GH10 Dielec- "K" tric ... | Original |
2 pages, |
W381 L38112 GH25 GB10 datasheet abstract |
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| Abstract: NOMINAL SIZES Dimensions: inches (millimeters) GB/GH50 GB/GH50 GB/GH70 GB/GH70 GB/GH90 GB/GH90 AVX Style GB/GH10 GB , WITHOUT BORDERS CAPACITANCE RANGE BY CASE SIZE Cap. (pF) GH10 GH15 GH20 GH25 GH35 ... | Original |
2 pages, |
MIL-C-55681 datasheet abstract |
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| Abstract: VII 130-06P1 130-06P1 IC25 = 121 A VCES = 600 V VCE(sat) typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet OP9 VII L9 GH10 X13 E2 NTC B3 X15 Pin arangement see outlines VX18 K10 X16 Features IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 ± 20 VGES V V · NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching IC25 IC80 TC = 25°C TC = ... | Original |
2 pages, |
130-06P1 130-06P1 abstract |
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| Abstract: GH10 E2 AC1 IK10 L9 X13 A1 VDI VID OP9 IJK 10 VIO 1-2 VDI 130-06P1 130-06P1 ... | Original |
2 pages, |
SV18 PS18 NTC M4 ntc 2,0 inductive sensor SYMBOL robot control NTC 5,0 130-06P1 130-06P1 abstract |
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| Abstract: VDI 130-06P1 130-06P1 VII 130-06P1 130-06P1 VID 130-06P1 130-06P1 VIO 130-06P1 130-06P1 IC25 = 121 A = 600 V VCES VCE(sat) typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN X16 NTC X15 K10 L9 AC1 S GH10 E2 AC1 IK10 L9 X13 A VDI VID OP9 IJK VIO Pin arangement see outlines Features IGBTs Symbol Conditions ... | Original |
2 pages, |
SV18 robot control PS18 NTC 303 130-06P1 130-06P1 abstract |
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| Abstract: IGES B3 PS18 X15 L9 VX18 LMN 9 X16 NTC X15 K10 L9 AC1 S18 GH10 ... | Original |
2 pages, |
SV18 PS18 NTC M4 robot control ntc 60 IGBT control circuit inductive sensor SYMBOL 100-06P1 100-06P1 abstract |
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| Abstract: X15 L9 VX18 LMN X16 NTC X15 K10 L9 AC1 S GH10 E2 AC1 IK10 ... | Original |
2 pages, |
PS18 SV18 NTC 303 100-06P1 100-06P1 abstract |
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| Abstract: for contact terminations. 0.275(6.99) 0.056(1.42) GH10 DIMENSIONS ARE IN INCHES (MILLIMETERS). , contact variant hole positions. GH10 1/2-20 UNF-2A Threads Size GH4 uses 0.056(1.42) � pin in , CHANGE. TYPICAL MATING ASSEMBLIES GH5FSCLRH19S GH5FSCLRH19S GH10FSCLSH16 GH4MSCLSH10C GH4MSCLSH10C GH4FSCLRN0 4 Positronic Industries, Inc. GH5MSCLSH19 GH5MSCLSH19 GH10MDS4LRN0 PROFESSIONAL QUALITY, FIXED CONTACT ... | Original |
14 pages, |
ASTMD-5948 H7B transistor positronic straight connectors GH10FSCLSH16 military connectors connector pin contact GH-10F gh 312 Positronic Industries ASTM-D-5948 datasheet abstract |
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| Abstract: L9 AC1 E2 A GH10 X13 1-4 VDI 50-12P1 50-12P1 VII 50-12P1 50-12P1 VID 50-12P1 50-12P1 VIO 50-12P1 50-12P1 VII ... | Original |
4 pages, |
SV18 PS18 50-12P1 50-12P1 abstract |
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| Abstract: LED DATA SHEET Part No. WR106G/W WR106G/W Emitted Color Yellow Green Chip Materia Len's Color Water Clear GaP Features: Compatible with automatic placement equipment Compatible with reflow solder process Low power consumption and wide viewing angle Applications: Automotive and Telecommunication Flat backlight for LCD ,switch and symbol in telephone and fax General use for indicators Package Dimensions: Note: 1All dimensions are in millimetres (mm) 2Tolerance is ±0 ... | Original |
3 pages, |
WR106G/W WR106G/W abstract |
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| Abstract: LED DATA SHEET Part No. WR148G/W WR148G/W Emitted Color Yellow Green Chip Materia Len's Color Water Clear GaP Features: Compatible with automatic placement equipment Compatible with reflow solder process Low power consumption and wide viewing angle Applications: Automotive and Telecommunication Flat backlight for LCD ,switch and symbol in telephone and fax General use for indicators Package Dimensions: Note: 1All dimensions are in millimetres (mm) 2Tolerance is ±0 ... | Original |
3 pages, |
WR148G/W WR148G/W abstract |
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| Abstract: FEATURES AND SPECIFICATIONS Features and Benefits â- Mating and unmating made easy by the 1 -touch lock â- The projected metal shell permits the receptacle to be face-mounted on the edge of the PCB to save space Reference Information Packaging: Tray Mates With: 52629 Use With: 52661 shell kit Designed In: Millimeters Electrical Voltage: 125V Current: 0.5A Contact Resistance: 50m£2 max. Dielectric Withstanding Voltage: 500V AC Insulation Resistance: 500 M£2 min. molex 1.00mm (.039") Pitch ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: MECHANICAL DATA MPBG009 MPBG009  NOVEMBER 1995 GGA (S-PBGA-N128 S-PBGA-N128) PLASTIC BALL GRID ARRAY PACKAGE 7,10 6,90 1 A B C D E F G H 10,10 9,90 J K 0,50 L M N P R T 0,50 0,50 0,95 0,85 0,12 0,08 1,20 MAX 0,32 0,22 0,08 M 0,25 0,20 0,08 4073210/A 4073210/A 12/95 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 IMPORTANT NOTICE Texas Instr ... | Original |
2 pages, |
MPBG009 S-PBGA-N128 MPBG009 abstract |
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| Abstract: INTEGRATED CIRCUITS - CMOS (COMPLEMENTARY METAL OXIDE SILICON) NTE4066B NTE4066B Quad Bilateral Switch 14-Lead DIP, See Diag. 247 NTE4067B NTE4067B 24-Lead DI P, See Diag. 343 Analog, Single 16-Channel Multiplexer/Demultiplexer Common Out/In Ch 7 In/Out Ch 6 In/Out Ch 5 In/Out Ch 4 In/Out Ch 3 In/Out Ch 2 In/Out Ch 11n/Out Ch 0 In/Out A B Vss g vDD Ch 8 In/Out _Ch 9 In/Out H Gh 10 In/Out g Ch 11 In/Out Ch 12 In/Out Ch 13 In/Out Q Ch 14 In/Out B Ch 15 In/Out 0 Inhibit Ej c D NTE4068B NTE4068B 14-Lead DIP, See ... | OCR Scan |
1 pages, |
NTE4072B NTE4077B NTE4068B NTE4067B NTE4078B NTE4075B NTE4076B NTE4073B NTE4070B NTE4071B NTE4066B NTE4069 NTE4066B abstract |
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| Abstract: 10 BASE-T LAN 10 BASE -T LAN COMPONENTS FEATURE: · Designed to meet IR requirement · Environmental: At 235°C in 1 minute · 1500 Vrms isolation · Specifications: At 25°C Part No. LA-002 LA-002 LA-003 LA-003 LA-005 LA-005 LA-007 LA-007 LA-009 LA-009 LA-010 LA-010 LA-108 LA-108 Part No. LA-006 LA-006 OCL (uH) Min 75 140 140 140 67 200 112 Insertion Loss (dB) Max 1~100 MHz -1.2 APPLICATION: · 100 Mps 155 Mbps transmission in support of National Semiconductors · AMD · Level one and other chip manufacturers LL ... | Original |
2 pages, |
LA-108 datasheet abstract |
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| Abstract: -0,1 1,8 �05 compliant zone for through hole 2,5 �05 4x2.5= 10 5 4 3 2 1 5,3 B C D c d 3,7 1,8 0,1 a b A Datum plane depth 6 Bezugsebene Tiefe 7 0,2 8 ( 3 -0,1 ) 10 9 3,8 5,7 0,1 Contact Selection Options 0,1 Kontaktversionen 1,5 e f 4,5 g h 2,5 Lochbild f黵 Leiterplatte 9x2.5= 22,5 24,95 0,75 Board hole pattern (Best點kungsseite) (Component mounting side) a ... | Original |
1 pages, |
datasheet abstract |
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| Abstract: SB2233-H SB2233-H Semiconductor Chip LED Features · · · · Colorless diffusion lens type Compact type Radiation size 2.9mm(L)Ã-1.3mm(W) surface mount type. ESD Protected (±2.0KV, 3 Times @100pF, 1.5K) Outline Dimensions unit : mm 2.40~2.60 0.50 Max. 1.80~2.00 2.80~3.00 1.20~1.40 0.10 Max. 0.90~1.10 0.50 Max. 0.20 Min. 1 2 PIN Connections 1. Anode 2. N.C. 3. Cathode KSD-O8Q003-001 KSD-O8Q003-001 1 SB2233-H SB2233-H Absolute Maximum Ratings Characteristic ... | Original |
5 pages, |
SB2233-H SB2233-H abstract |
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| Abstract: Surface Mount Bandpass Filter 50 BPF-A1340 BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC · · · · Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case Aqueous washable Pin Connections · · · · + RoHS compliant in accordance with EU Directive (2002/95/EC 2002/95/EC) Applications RF IN RF OUT GROUND CASE STYLE: HQ1157 HQ1157 PRICE: $39.95 ea. QTY (1 ... | Original |
1 pages, |
BPF-A1340 PL-227 9407a datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| ! BFG19S BFG19S BFG19S BFG19S , Si-NPN RF-Transistor in SOT223 ! VCE= 10.00V, IC= 50.00mA ! # GHz S MA R 50 ! ! f S11 S21 S12 S22 ! GHz Mag Ang Mag Ang Mag Ang Mag Ang .100 .4624 -138.3 29.0490 107.0 .0196 60.0 .3556 -56.5 .110 .4651 -142.2 26.6890 104.8 .0208 60.7 .3298 -57.3 .150 .4636 -153.6 20.0504 98.5 .0254 63.3 .2573 -58.3 .200 www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v50m.s2p |
Siemens | 29/07/1992 | 2.67 Kb | S2P | gh10v50m.s2p |
| ! BFG19S BFG19S BFG19S BFG19S , Si-NPN RF-Transistor in SOT223 ! VCE= 10.00V, IC= 70.00mA ! # GHz S MA R 50 ! ! f S11 S21 S12 S22 ! GHz Mag Ang Mag Ang Mag Ang Mag Ang .100 .4560 -144.4 29.1618 104.6 .0186 62.3 .3155 -57.5 .110 .4596 -147.8 26.7266 102.6 .0198 62.9 .2922 -58.1 .150 .4592 -158.0 19.9757 96.9 .0246 65.7 .2280 -58.3 .200 www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v70m.s2p |
Siemens | 29/07/1992 | 2.67 Kb | S2P | gh10v70m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 10 V IC = 50 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.4624 -138.3 29.049 107.0 0.0196 60.0 0.3556 -56.5 0.110 0.4651 -142.2 26.689 104.8 0.0208 60.7 0.3298 -57.3 0.150 0.4636 - www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v50m-v1.s2p |
Siemens | 08/08/1994 | 2.35 Kb | S2P | gh10v50m-v1.s2p |
| ! BFG19S BFG19S BFG19S BFG19S , Si-NPN RF-Transistor in SOT223 ! VCE= 10.00V, IC= 10.00mA ! # GHz S MA R 50 ! ! f S11 S21 S12 S22 ! GHz Mag Ang Mag Ang Mag Ang Mag Ang .100 .6515 -90.9 19.3891 126.3 .0323 53.0 .6757 -35.3 .110 .6423 -96.7 18.3221 123.2 .0338 51.6 .6444 -36.8 .150 .6066 -115.0 14.7648 113.3 .0383 47.6 .5428 -40.1 .200 www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v10m.s2p |
Siemens | 29/07/1992 | 2.67 Kb | S2P | gh10v10m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 10 V IC = 20 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.5389 -113.6 25.016 116.4 0.0252 53.5 0.5191 -46.1 0.110 0.5351 -119.0 23.264 113.6 0.0263 53.0 0.4875 -47.3 0.150 0.5177 - www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v20m-v1.s2p |
Siemens | 08/08/1994 | 2.35 Kb | S2P | gh10v20m-v1.s2p |
| ! BFG19S BFG19S BFG19S BFG19S , Si-NPN RF-Transistor in SOT223 ! VCE= 10.00V, IC= 80.00mA ! # GHz S MA R 50 ! ! f S11 S21 S12 S22 ! GHz Mag Ang Mag Ang Mag Ang Mag Ang .100 .4568 -146.5 28.7820 103.9 .0183 62.7 .3033 -56.8 .110 .4604 -149.8 26.3603 101.9 .0195 63.6 .2814 -57.2 .150 .4611 -159.3 19.6715 96.4 .0245 66.5 .2208 -56.9 .200 www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v80m.s2p |
Siemens | 29/07/1992 | 2.67 Kb | S2P | gh10v80m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 10 V IC = 10 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.6515 -90.9 19.389 126.3 0.0323 53.0 0.6757 -35.3 0.110 0.6423 -96.7 18.322 123.2 0.0338 51.6 0.6444 -36.8 0.150 0.6066 - www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v10m-v1.s2p |
Siemens | 08/08/1994 | 2.35 Kb | S2P | gh10v10m-v1.s2p |
| ! BFG19S BFG19S BFG19S BFG19S , Si-NPN RF-Transistor in SOT223 ! VCE= 10.00V, IC= 20.00mA ! # GHz S MA R 50 ! ! f S11 S21 S12 S22 ! GHz Mag Ang Mag Ang Mag Ang Mag Ang .100 .5389 -113.6 25.0162 116.4 .0252 53.5 .5191 -46.1 .110 .5351 -119.0 23.2639 113.6 .0263 53.0 .4875 -47.3 .150 .5177 -134.9 17.9730 105.4 .0302 53.3 .3925 -49.5 .200 www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v20m.s2p |
Siemens | 29/07/1992 | 2.67 Kb | S2P | gh10v20m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 10 V IC = 80 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.4568 -146.5 28.782 103.9 0.0183 62.7 0.3033 -56.8 0.110 0.4604 -149.8 26.360 101.9 0.0195 63.6 0.2814 -57.2 0.150 0.4611 - www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v80m-v1.s2p |
Siemens | 08/08/1994 | 2.35 Kb | S2P | gh10v80m-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFG19S BFG19S BFG19S BFG19S ! Si NPN RF Bipolar Junction Transistor in SOT223 ! VCE = 10 V IC = 70 mA ! Common Emitter S-Parameters: July 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.4560 -144.4 29.162 104.6 0.0186 62.3 0.3155 -57.5 0.110 0.4596 -147.8 26.727 102.6 0.0198 62.9 0.2922 -58.1 0.150 0.4592 - www.datasheetarchive.com/files/siemens/ehdata/spar/bfg19s/gh10v70m-v1.s2p |
Siemens | 08/08/1994 | 2.35 Kb | S2P | gh10v70m-v1.s2p |