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Abstract: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part , *J43A 43 47.8 52.8 1 69.4 4.5 5 CT 7.3 5 MT 22 5 GGT SM*J45 45 50 61.1 1 80.3 3.9 5 , GGS SM*J78A 78 86.7 95.8 1 126 2.5 5 RT 3.7 5 NT 12.5 5 GGT SM*J85 85 94.4 115 1 151 , *J170A J170A 170 189 209 1 275 1.1 5 SQ 2.2 5 PQ 5.7 5 GHQ *Replace with A, B, or C, depending on ... Original
datasheet

1 pages,
50.86 Kb

marking ghm marking sm CV suppressor GGP 16 DIODE diode marking code cz GGV DIODE ggz diode GGZ 47 Diode GHM marking code SM CM marking code GGt sm 58 b GGT DIODE ON J100A J110A J100A abstract
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Abstract: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part , *J43A 43 47.8 52.8 1 69.4 4.5 5 CT 7.3 5 MT 22 5 GGT SM*J45 45 50 61.1 1 80.3 3.9 5 , GGS SM*J78A 78 86.7 95.8 1 126 2.5 5 RT 3.7 5 NT 12.5 5 GGT SM*J85 85 94.4 115 1 151 , *J170A J170A 170 189 209 1 275 1.1 5 SQ 2.2 5 PQ 5.7 5 GHQ *Replace with A, B, or C, depending on ... Original
datasheet

1 pages,
51.56 Kb

ghk diode marking code nt sm 58 b GGP 16 DIODE ML 5 transistors MARKING MZ mz 91 PH 48 marking code marking CODE J36 mz 73 b marking sm CV marking code diode transient GGR diode J100A J110A J100A abstract
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Abstract: GSS Vgs=±30V Vgs=0V 10 100 nA Drain Source On-State Resistance R DS(on) Id=2,5A Vgs=10V 1,7 2,3 a , Turn-On-Time U (ton=td(on)+tr) t d(on) VÅ"=600V Id=5A VGS=10V Rgs=25 a 25 40 ns tr 100 150 ns , Tc=25°C 5 A Diode Forward On-Voltage V SD If=2XIdr Vgs=0V Tch=25°C 1,0 1,5 V Reverse Recovery Time , i i i i Li TT^r gg^T i 8 sy I .'. i . jT^ I ; ! \ . / : ! i i ; a-m ! i i 1 \ S i I , Reverse Diode If-IVjoI; 0OVJS pulsate«; VÅ"=ov t ^ io E >3 ¿Ë Er - = . ... OCR Scan
datasheet

2 pages,
130.01 Kb

2SK2397-01MR 2SK2397-01MR abstract
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Abstract: Waveform o^n,^ / : : j dV/dt \/ Re-Applied • Body Diode* forward Drop > Inductor Current ; Rippte £5% , Drive RDS(on) Specified at Vgs=5.0V & 10V Description Fourth Generation HEXFETs from International , 1.0W is possible in a typical surface mount application. Vdss = 50V ^DS(on) - 0-30n lD = 2.6A , ±20 V dv/dt Peak Diode Recovery dv/dt ® 3.0 V/ns Tj, Tstg Junction and Storage Temperature Range , - 70 MA5S452 MA5S452 0021750 751 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended ... OCR Scan
datasheet

8 pages,
437.97 Kb

IRFS1Z0 marking IR s27 AN-994 IRFS1Z0 datasheet abstract
datasheet frame
Abstract: on resistance of the switch allows inputs to be connected to outputs without adding propagation delay , LOW, the switch is ON and Port A is connected to Port B. When OE is HIGH, the switch is OPEN and a , Ratings(Notei) Supply Voltage (Vcc) DC Switch Voltage (Vs) DC Input Voltage (V,N) (Note 2) DC Input Diode , ratings may be exceeded if the Input and output diode current ratings are observed. Note 3: Unused , Parameter Vcc (V) Ta = -40 °C to +85 °C Units Conditions Min Typ (Note 4) Max V|K Clamp Diode ... OCR Scan
datasheet

6 pages,
221.26 Kb

MTC20 MS-013 MQA20 MO-137 FST3245WM FST3245QSC FST3245MTC FST3245 FST3245 abstract
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Abstract: UNIT Peak Pulse Power Dissipation on 10/1000us waveform (note 1,2,FIG.1) PPPM Min 1500 Watts Peak Pulse Current of on 10/1000us waveform (note 1,FIG.3) IPPM See Table 1 Amps , Wave Superimposed on Rated Load, (JEDEC Method) (note 2,3) Operating junction and Storage , derated above TA=25°C per Fig 2 2. Mounted on 8.0mm2.Copper Pads to each terminal 3. 8.3ms single half , GFE GFG GFK GFM GFP GFR GFT GFV GFX GFZ GGE GGG GGK GGM GGP GGR GGT GGV GGX GGZ ... Original
datasheet

2 pages,
136.95 Kb

SMCJ11A SMCJ12A marking code BEV SMCJ5.0A marking bgp GHM DIODE GEZ DIODE 544 geg diode gde 78 447 gev GGT DIODE ON DIODE BJE Diode GFK Gex DIODE datasheet abstract
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Abstract: Diode Series General Information The markets of portable communications, computing and video equipment , Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM 200 , , resistive or inductive load. For capacitive load, derate current by 20 %. VF = 3.5 V on SMCJ5.0A through SMCJ90A SMCJ90A and VF= 5.0 V on SMCJ100A SMCJ100A through SMCJ170A SMCJ170A. How to Order SMCJ 5.0 CA Package SMCJ = SMC , = 5 % Tolerance Bidirectional Device SMCJ Transient Voltage Suppressor Diode Series Electrical ... Original
datasheet

5 pages,
349.92 Kb

smcj diode Bourns SMCJ40A SMCJ GFR GGT DIODE Diode Gfg 45 307 GDE SMCJ16CA BEP GGR diode GEZ DIODE GGP DIODE Diode GHM DIODE gde 18 Diode Gfg 33 Diode BFM datasheet abstract
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Abstract: Voltage Suppressor Diode Series General Information The markets of portable communications, computing , (TP = 1 ms) Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load , Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %. VF = 3.5 V on CD214C-T5 CD214C-T5.0A through CD214C-T90A CD214C-T90A and VF = 5.0 V on CD214C-T100A CD214C-T100A through CD214C-T170A CD214C-T170A. How To Order CD 214C - T 5.0 CA LF Common Code Chip Diode Package 214A = SMA/DO-214AC SMA/DO-214AC 214B = SMB/DO-214AA SMB/DO-214AA 214C = ... Original
datasheet

5 pages,
138.73 Kb

diode marking BFK on semiconductor CD214C-T170A CD214C GGP DIODE GGT DIODE ggz diode t15a transient Diode bge Diode BFM DIODE gde 18 transient voltage suppressor diode diode gde 78 Diode GHM datasheet abstract
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Abstract: Diode Series General Information The markets of portable communications, computing and video equipment , Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM 200 , , resistive or inductive load. For capacitive load, derate current by 20 %. VF = 3.5 V on SMCJ5.0A through SMCJ90A SMCJ90A and VF= 5.0 V on SMCJ100A SMCJ100A through SMCJ170A SMCJ170A. How to Order SMCJ 5.0 CA Package SMCJ = SMC , Bidirectional Device SMCJ Transient Voltage Suppressor Diode Series Electrical Characteristics (@ TA = 25 ... Original
datasheet

5 pages,
360.96 Kb

SMCJ100A SMCJ10A SMCJ10CA SMCJ11A SMCJ11CA SMCJ12A SMCJ170A SMCJ90A smcj bfk Diode GFK marking diode DO-214AB Gex DIODE Diode GHM GFX DIODE datasheet abstract
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Abstract: Suppressor Diode Series General Information The markets of portable communications, computing and video , Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3 , inductive load. For capacitive load, derate current by 20 %. VF = 3.5 V on CD214C-T5 CD214C-T5.0A through CD214C-T90A CD214C-T90A and VF = 5.0 V on CD214C-T100A CD214C-T100A through CD214C-T170A CD214C-T170A. How To Order CD 214C - T 5.0 CA LF Common Code Chip Diode Package 214A = SMA/DO-214AC SMA/DO-214AC 214B = SMB/DO-214AA SMB/DO-214AA 214C = SMC/DO-214AB SMC/DO-214AB Model T = ... Original
datasheet

5 pages,
216.43 Kb

t15a CD214C CD214C-T170A CD214C-T26A Diode BFM Diode BFX 514 Diode Gfg 45 214B diode smc bfk marking code T16A GGT DIODE JEDEC DO-214AC Diode GFK 48 GEZ DIODE datasheet abstract
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