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Part : GES5306 Supplier : GE Manufacturer : Bristol Electronics Stock : 970 Best Price : $0.15 Price Each : $0.75
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GES5306A Datasheet

Part Manufacturer Description PDF Type
GES5306A Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan
GES5306A General Electric Semiconductor Data Handbook 1977 Scan
GES5306A General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan
GES5306A N/A Basic Transistor and Cross Reference Specification Scan
GES5306A N/A Shortform Transistor PDF Datasheet Scan
GES5306A N/A Shortform Transistor Datasheet Guide Scan

GES5306A

Catalog Datasheet MFG & Type PDF Document Tags

GES5307

Abstract: 2N3901 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K , 2K-20K 2mA, 5 1.4 200mA, 200mA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200mA GES5306A NPN 25 7K-70K , specified) GES5305 GES5307 GES5306 GES5308 Voltages GES5306A GES5308A Collector to Base vcbo , in case temperature above 25°C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A,GES5308A , . GES5305, GES5307 GES5306, GES5308 GES5306A, GES5308A Typical Curves Typical hpE vs. Ic .01 .02 .04.06
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OCR Scan
2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 TO-92 NPN CBO 40V CEO 25V EBO 5V quan-tech

2N5089 equivalent

Abstract: D39C4 GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200mA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200mA , GES5308 Voltages GES5306A GES5308A Collector to Base vcbo 25 40 Volts Collector to Emitter VCEO 25 , °C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A,GES5308A J_L T -Loâ'"I 1 e -f- -o3 , , GES5308 GES5306A, GES5308A Typical Curves Typical hpE vs. Ic .01 .02 .04.06 .4 .6 5 1 2 4 6 610 20 40 , TEMPERATUREâ'"*C GES5305, GES5307 GES5306, GES5308 GES5306A, GES5308A hpE vs Ta /c
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OCR Scan
2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N5089 equivalent D39C4 2n5306 equivalent npn

2N5305

Abstract: 2N5306 to-98 , GES5306A 7,000 70,000 (lc = 100mA, VCE = 5V) 2N5306, GES5306A 20,000 - Collector-To-Emitter , 15.7kHz)2N5306A,GES5306A eft Typical 230 nVVHz TERMINAL CONNECTIONS TO-92 Package Lead 1 - Emitter Lead
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OCR Scan
2N5305 2N5306 to-98 2N5306 equivalent 2n5306 GE 2N5305 to-98 92CS-42629 S-42634 92CS-42636 2CS-4263I 92CS-42C30

TO-98

Abstract: transistor MPSA06 7K-70K TO-98 â'¢ GES5305 300 25 2K-20K TO-92 â'¢ GES5306 300 25 7K-70K TO-92 â'¢ GES5306A 300 25 7K-70K
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OCR Scan
2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 TO-98 transistor MPSA06 transistor 2n3903 2N3904 TO-92 type NPN Transistor TO92 2N4124 transistor

mps 06

Abstract: TO-98 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN
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OCR Scan
MPSA55 MPS3702 MPS3704 MPS3703 MPS3705 MPS3706 mps 06 6513

MPSA14 MPSA64

Abstract: GES5307 1.6 0.2 30 GES5306A 0.3 25 0.4 7,000 - 70,000 .002 1.6 0.2 30 GES5307 0.3 40 0.4 2,000 - 20
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OCR Scan
2N5307 2N5308A MPSA14 MPSA64 MPS-A13 pnp Central D40C1 D40C2 2N53 S5306 MPS-A65 MPS-A66 MPS-D04

D39C4

Abstract: ei50 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K , 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K
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OCR Scan
2N5232A 2N5249A ei50 D38S7 GES6220 100MA 10KHZ 600MA 2N5309

quan-tech

Abstract: 2N3901 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K , 2K-20K 2mA, 5 1.4 200mA, 200mA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200mA GES5306A NPN 25 7K-70K
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OCR Scan
N530 2N5310 2N5311 2283/2181M

2N3901

Abstract: D38S1-4 100-300 10 mA. 5 3 VCE = 5V. Ic 10mA. Rs = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K
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OCR Scan
D38S1-4 100KF GES93 GES6010 GES6011 GES6014 GES6015 GES929 GES930

2N5175

Abstract: D39C4 SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K
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OCR Scan
2N5175 2N5174-2N5176 2N3877 D39C4-6 2N5308 N5308A D16P1 GES6218

2N3877A

Abstract: NPN Transistor TO92 5V 200mA SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K
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OCR Scan
2N3877A NPN Transistor TO92 5V 200mA pnp Transistor TO92 5V 200mA 2n3877 transistor GES6219 GES6221

D40C2

Abstract: CENTRAL SEMICONDUCTOR f c , l D | nfl'HbB 4 1~3 T"29"29 SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) lc ^ ^ O O m A TYPE NPN 2N5305 2N5306 2N 5306A 2N5307 2N5308 2N 5308A GES5305 GÈS5306 GES5306A GES5307 GES5308 GES5308A MPS-A65 MPS-A66 MPS-D04 * VCES ^ CASE OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO NO. PNP Pd (Max) TA=25°C hFE @ 1C VCE(S) @ 1C fT Min Mh z Amps 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Volts 25 25 25 40 40 40
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OCR Scan
MPS-D54 2N6426 2N6427 MPS-A12 MPS-A13 MPS-A14

D39C4

Abstract: GES6220 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5
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OCR Scan
2N4256 2N4424 2N4425 2N5174 2N5232 2IM5172

2N5306 equivalent

Abstract: ATI 200M 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5
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OCR Scan
ATI 200M 100-J01 2N5354 2N5355 2N5356 2N5365 2N5366

mhb 7001

Abstract: PJ 1269 , 200mA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200mA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA
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OCR Scan
GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 mhb 7001 PJ 1269 OF transistor 2n5307 nixie

2N3877

Abstract: 2n3877a NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN
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OCR Scan
2N2711 2N2712 2N2713 2N2714 2N3391 2N3392

2N3391A

Abstract: 2N3844 100-300 10 mA. 5 3 VCE = 5V. Ic 10MA. RS = 10K, BW = 15.7KHZ, f - 10Hz to 10KHz GES5306A NPN 25 7K-70K
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OCR Scan
D38S5 hitachi 16 X 2 lcd D38S1-10 D38S3

2N4424

Abstract: D39C4 1.4 200mA, 200mA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200mA GES5307 NPN 40 2K-20K 2mA, 5
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OCR Scan
2181M monolithic amplifiers 2N5418 2N5419

TRANSISTOR 2n3901

Abstract: 2N390 pnp - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg - 160K, BW = 15.7KHZ, f =
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OCR Scan
TRANSISTOR 2n3901 2N390 pnp 2N3904 TO92 pnp -NPN silicon high power transistor NPN 2n3904 transistor 2n3391 2N3393 2N3394 2N3395 2N3396 2N3397 2N3398

2N2711

Abstract: 2N2712 - 10Hz to 10KHz GES5306A NPN 25 7K-70K 2mA, 5 5 VCE - 5V, lc = 600mA, Rg - 160K, BW = 15.7KHZ, f =
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OCR Scan
2n3405 n3860 2N3402 2N3403 2N3404 2N3405 2N3414 400-3K

2N5305

Abstract: 53-06A , GES5306A 7,000 70,000 (lc = 100mA, VCE = 5V) 2N5306, GES5306A 20,000 - Collector-To-Emitter , 15.7kHz)2N5306A,GES5306A eft Typical 230 nVVHz TERMINAL CONNECTIONS TO-92 Package Lead 1 - Emitter Lead
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OCR Scan
53-06A 92CS-4263Q 92CS-4263S S-42S27 10--T
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