500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : GES5306 Supplier : GE Manufacturer : Bristol Electronics Stock : 970 Best Price : $0.15 Price Each : $0.75
Shipping cost not included. Currency conversions are estimated. 

GES5305 Datasheet

Part Manufacturer Description PDF Type
GES5305 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan
GES5305 General Electric Semiconductor Data Handbook 1977 Scan
GES5305 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan
GES5305 N/A Basic Transistor and Cross Reference Specification Scan
GES5305 N/A Shortform Transistor PDF Datasheet Scan
GES5305 N/A Shortform Transistor Datasheet Guide Scan

GES5305

Catalog Datasheet MFG & Type PDF Document Tags

2N5305

Abstract: 2N5306 to-98 , GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6 , industrial control applications. The 2N5305, 6, and 6A are supplied in JEDEC TO-98 package, the GES5305, 6 , » STATE Ã"ï DE g 3Ã"75GÛ1 â¡017ci4fl E Signal Transistors- / ' 2 ^ >¿7 2N5305, 6, 6A, GES5305, 6, 6A , , GES5305 2,000 20,000 (lc = 100mA, VCE = 5V) 2N5305, GES5305 hFE 6,000 - (lc = 2 mA, VCE = 5 V) 2N5306 , , GES5305 hfe 2,000 - (VCE = 5V, ic = 2mA, f = 1 KHZ) 2N5306,6A, GES5306,6A 7,000 - - (VCE = 5V, lc =
-
OCR Scan
2N5306 to-98 2N5306 equivalent 2n5306 GE 2N5305 to-98 2N5306A 92CS-42629 S-42634 92CS-42636 2CS-4263I 92CS-42C30 92CS-4

2N5305

Abstract: 53-06A Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are planar, epitaxial, passivated NPN silicon , JEDEC TO-98 pack age, the GES5305, 6, and 6A are supplied in JEDEC TO-92 package. Devices in TO , 2N5305, 6, 6A, GES5305, 6, 6A ELEC TR IC AL CH AR AC TER ISTIC S, A t A m b ie n t T e m perature (T /0 , 650 Typical 60 KQ MHZ CC b ^e b 10.5 Typical 7.6 Typical 10 pF 2N5305, GES5305 2N 5306,6A , G E S 53
-
OCR Scan
53-06A 92CS-4263Q 92CS-4263S S-42S27 10--T

GES5307

Abstract: 2N3901 in case temperature above 25°C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A,GES5308A , Type BVceo hfe vce(sat) (V) Min.-Max. a câ'¢ vce (V) (V) Max. §> lC. 'B GES5305 NPN 25 , Darlington Amplifiers CONSUMER-INDUSTRIAL The General Electric GES5305, 6, 6A, 7, 8, 8A are NPN, silicon , specified) GES5305 GES5307 GES5306 GES5308 Voltages GES5306A GES5308A Collector to Base vcbo , ) STATIC CHARACTERISTICS MIN. MAX. Collector to Base Breakdown Voltage (Ic = 0.1 ;UA, Ic = 0) GES5305
-
OCR Scan
2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 TO-92 NPN CBO 40V CEO 25V EBO 5V quan-tech

2N5089 equivalent

Abstract: D39C4 °C. I-1 -1 GES5305.GES5307 GES5306,GES5308 GES5306A,GES5308A J_L T -Loâ'"I 1 e -f- -o3 , GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2 , ) (V) Min.-Max. a câ'¢ vce (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200mA , CONSUMER-INDUSTRIAL The General Electric GES5305, 6, 6A, 7, 8, 8A are NPN, silicon, planar, epitaxial, passivated , applications. absolute maximum ratings: (25°C) (unless otherwise specified) GES5305 GES5307 GES5306
-
OCR Scan
2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N5089 equivalent D39C4 equivalent npn

2N5306 equivalent

Abstract: ATI 200M ) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & , Silicon Transistors r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306
-
OCR Scan
2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A ATI 200M GES6220 2IM5172

MPS004

Abstract: npn darlington motorola to92 MPSA12 2S0549 HS5305 HS530S HS530SA RN5305 RN530S GES5305 GES5305 2N5305 GES530S GES5306 GES530SA
Advanced Semiconductor
Original
MPS004 npn darlington motorola to92 k0221 SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002

TO-98

Abstract: transistor MPSA06 7K-70K TO-98 â'¢ GES5305 300 25 2K-20K TO-92 â'¢ GES5306 300 25 7K-70K TO-92 â'¢ GES5306A 300 25 7K-70K
-
OCR Scan
2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 TO-98 transistor MPSA06 transistor 2n3903 2N3904 TO-92 type NPN Transistor TO92 2N4124 transistor

D39C4

Abstract: ei50 Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 , r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are
-
OCR Scan
2N5249A ei50 D38S7 100MA 10KHZ 2N5308A 600MA 2N5309

mps 06

Abstract: TO-98 -92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305
-
OCR Scan
MPSA55 MPS3702 MPS3704 MPS3703 MPS3705 MPS3706 mps 06 6513

MPSA14 MPSA64

Abstract: GES5307 lU^ICODI GES5305 0.3 25 0.4 2,000 - 20,000 .002 1.6 0.2 30 GÃS5306 0.3 25 0.4 7,000 - 70,000 .002
-
OCR Scan
2N5307 MPSA14 MPSA64 MPS-A13 pnp Central D40C1 D40C2 2N53 MPS-A65 MPS-A66 MPS-D04 2N6426 2N6427

2N5175

Abstract: D39C4 SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K
-
OCR Scan
2N5175 2N5174-2N5176 2N3877 D39C4-6 2N5308 N5308A D16P1 GES6218

2N5219

Abstract: 2N5221 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
2N4125 2N4126 2N4400 2N4401 2N4402 2N5219 2N5221 D 467 npn 2N4403

2N3877A

Abstract: NPN Transistor TO92 5V 200mA SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA GES5306 NPN 25 /K-70K 2mA, & 1.4 200mA, 200MA GES5306A NPN 25 7K-70K. 2mA, 5 1.4 200mA, 200MA GES5307 NPN 40 2K-20K 2mA, 5 1.4 200mA, 200MA GES5308 NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA GES5308A NPN 40 7K-70K 2mA, 5 1.4 200mA, 200MA D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K
-
OCR Scan
2N3877A NPN Transistor TO92 5V 200mA pnp Transistor TO92 5V 200mA 2n3877 transistor GES6219 GES6221

2N5223

Abstract: CEB npn GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
2N5223 CEB npn GES93 2N4409 2N4410 N5088 2N5089 2N5220

2N5219

Abstract: 2N5227 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
2N5227 2N5225 2N5226

D40C2

Abstract: CENTRAL SEMICONDUCTOR f c , l D | nfl'HbB 4 1~3 T"29"29 SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) lc ^ ^ O O m A TYPE NPN 2N5305 2N5306 2N 5306A 2N5307 2N5308 2N 5308A GES5305 GÈS5306 GES5306A GES5307 GES5308 GES5308A MPS-A65 MPS-A66 MPS-D04 * VCES ^ CASE OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO NO. PNP Pd (Max) TA=25°C hFE @ 1C VCE(S) @ 1C fT Min Mh z Amps 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Volts 25 25 25 40 40 40
-
OCR Scan
MPS-D54 MPS-A12 MPS-A13 MPS-A14 D40C1 D40C3

2N5219

Abstract: 2N5225 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
JEDEC 2N3904

2N4410

Abstract: 2N3903 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan

GES5307

Abstract: GES93 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
2n4123 transistor tl 2N3904 TRANSISTOR

20 watt audio amplifier

Abstract: 2n5220 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
20 watt audio amplifier

2N3903

Abstract: 2N3904 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
GES2221 GES2222 6ES2222 100MH

2N3877

Abstract: 2n3877a -92 PACKAGE Device Type BVCEO hFE VCE(SAT) (V) Min.-Max. a câ'¢ vCE (V) (V) Max. §> lC. 'B GES5305
-
OCR Scan
2N2711 2N2712 2N2713 2N2714 2N3391 2N3392

2n3904 409

Abstract: 2N4125 GES2907 PNP 40 100 : 300 150 10 â MBM 150 15 225 3.0 350 360 GES5305 NPN 25 2K 20 K 2 R-. jjj|jB 200 .2
-
OCR Scan
2n3904 409 ges5815 100300 2N4I26
Showing first 20 results.