NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ISSUED DATE :2005/10/21 REVISED DATE : GBC557 PNP SILICON TRANSISTOR Description The GBC557 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC547 GBC547 Package Dimensions D TO-92 E A S1 , 120 - Classification Of hFE Rank Range GBC557 A 120 ~ 220 Ratings -50 -45 -5 -100 , GBC557 Page: 2/2 ... | Original |
2 pages, |
GBC557 GBC547 GBC557 abstract |
| Abstract: ISSUED DATE :2005/10/21 REVISED DATE : GBC547 GBC547 NPN SILICON TRANSISTOR Description The GBC547 GBC547 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC557 Package Dimensions D TO-92 E A S1 b1 REF. L S E A T IN G PLANE e1 e b A S1 b b1 C C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 Millimeter Min. Max. 4.44 4.7 3.30 ... | Original |
2 pages, |
GBC557 GBC547 GBC547 abstract |