NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| GAE150BA60 | SanRex | IGBT MODULE |
3 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IGBT MODULE GAE150BA60 UL;E76102 E76102 M SanRex IGBT Module GAE150BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode (trr=0.1 s) reverse connected across IGBT. IC 150A , Conditions GAE150BA60 Unit VCES Collector-Emitter Voltage with gate terminal shorted to , 0.10 0.15 s 0.50 /W 300A/ s, Clamp Diode V 46 GAE150BA60 47 GAE150BA60 ... | Original |
3 pages, |
GAE150BA60 E76102 GAE150BA60 abstract |
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| Abstract: IGBT MODULE GAE150BA60 UL;E76102 E76102 M SanRex IGBT Module GAE150BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT , with gate terminal shorted to emitter VGES Gate-Emitter Voltage GAE150BA60 with collector , Diode 46 GAE150BA60 Output Characteristics Typical Pulse Test Tj= , Gate-Emitter Voltage VGE V Switching Time tr,td on tf,td , off ns GAE150BA60 Gate Charge ... | Original |
3 pages, |
GAE150BA60 IC150A GAE150BA60 abstract |
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| Abstract: Charge QG nC - IGBT MODULE GAE150BA60 UL;E76102 E76102 M SanRex IGBT Module GAE150BA60 is designed for high speed, high current switching applications. This Module is electrically , Voltage with gate terminal shorted to emitter VGES Gate-Emitter Voltage GAE150BA60 with , Junction-Case, At Clamp Diode 46 GAE150BA60 Output Characteristics Typical Pulse , Gate-Emitter Voltage VGE V Switching Time tr,td on tf,td , off ns GAE150BA60 Gate Charge ... | Original |
31 pages, |
sanrex IGBT GAE75BA60 GAE150BA60 GAE100BA60 IC75A VCES600V GAE75BA60 abstract |
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