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GA03 Datasheet

Part Manufacturer Description PDF Type
GA0381M CUI Speakers, Audio Products, SPEAKER ALNICO 8OHM .2W 38MM RND Original
GA03JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1200V 3A TO-247AB Original

GA03

Catalog Datasheet MFG & Type PDF Document Tags

GA03

Abstract: GA02 D GA01 - PT GA02 - PT GA03 - PT SM PIN ASSIGNMENT AD VA N CE D PR O DU CT LOGIC DIAGRAM Vcc Vee TUNE GA01 - PS GA02 - PS GA03 - PS BARE DIE PAD ASSIGNMENT *- Back side of Die , 26 27 28 29 30 31 32 33 GA01 - DG GA02 - DG GA03 - DG Gnd Vcc Reset_in Vcc Gnd Q_25 PVcc Gnd PVcc , GA01 GAO2 MAX MIN 1,344 28.00 672 GA03 MAX 1,642 IN FO RM AT IO N MIN NOM NOM 1,493
Connor-Winfield
Original
GA000 GA03 GA02 ga01 FC-43 AN-94 AN-95 14-PIN

tda power amplifier circuit diagram

Abstract: 1AV4U Tamb= 60°C a heatsink of Rthâ'" 14°C/W is required. 1072 Gâ'"03 360 S G S-THÃI1S0N 07E D , dimensioned plate as shown in fig. 13. 1072 Gâ'"03 363 s G S-THOtlSON Q7E D I 7^2=1537 001E4t>7 S I , T , Gâ'"03 364
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OCR Scan
TDA1170S TDA117QS TDA1170SH tda power amplifier circuit diagram 1AV4U 1170s TDA1170 TDA 1068 1170S 0D15457 T-77-07-11 T-77-

C67078-A1101-A2

Abstract: '"7 V 10 588 1170 Gâ'"03 BUZ 201 Typical drain-source on-atate resistance "ds (on) = Hlo , °/ â 50 50 100 °C 150 1171 Gâ'"03 588 61 I . . . aaD d â  fl23sbas aomafio a hsieg SIEMENS
-
OCR Scan
C67078-A1101-A2
Abstract: 1000 COLLECTOR CURRENT IN mA 0*5. to A-I3.9Ï4 2934 Gâ'"03 4â'"99 JUNCTION CAPACITANCE AS A -
OCR Scan
050M33A D037SCJ T-91-01 05Q433 DQ0373Q
Abstract: Connectors AMP Ignition Plug Contacts For Round Pins Applicable ignition plugs g±03 For 01.2 -
OCR Scan

BA514

Abstract: 19VIN R.ohm QUALITY-RELIABILITY A I r* BA514 ( * BA5141.-J.S , J - ~J\s J- Salile mt - ic?\ vif^.ti.'höv* a^f'ini^ic2Wo)fii At/j< isen. U/J^sip â  ft (Features) 1. 9V> in (THD 10%) co M I ¿>a 2. SIL» 8pinT\ ^o r-rOo '1. 'J v 5. NAB f zi-y-rtf/Vj- yy-Jt LTOgJfl// ré òo ( 1001 Iz/54dBs 1K H/.MOdB) â  m ÌÉ (Application) 'Kâ'" V y V y % /?K - 9 J) \,=r - J L> Zi- V {Physical Dimensions) ^ï-Ji» K 19. G±0.3 13.2±0.2 1.2H / 2. M ±0.3 2.5^ I 2 3 * S
-
OCR Scan
19VIN
Abstract: C±0.3 4.00 D(max) 2.92 E±0.3 1.27 F±0.3 1.02 G±0.3 4.32 H±0.3 2.50 I Token Electronics
Original
TPS1608DBL 100KH
Abstract: ±0.3 1.27 F±0.3 1.02 G±0.3 4.32 H±0.3 2.50 I 3.56 J 1.40 K 4.06 å'™æ Token Electronics
Original
Abstract: ) Size A Max B Max C Max D Max E Max F±0.3 G±0.3 H Max J Max K Max L  -
Original
NHS50 HS100 HS150 HS200 HS250 HS300

Resistors

Abstract: HS100 Dimensions (mm) Size A Max B Max C Max D Max E Max F±0.3 G±0.3 H Max J Max K
ARCOL
Original
Resistors HS200-HS300

NJL62H300

Abstract: NJL63H300 PCBIÏttia NJL63HOOO mm : mm 1. ÃÉPi';i-ë-.l-â;-&g±0.3 2. xcDimzfíb-> ©OUT ©GND ®V
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OCR Scan
NJL62H300 NJL63H300 NJL61 NJL60H/V000 NJL50H/V000 NJLG1H300 NJL61V30Q

A 933 S transistors

Abstract: br 2222 npn "C Ptot 0.5 W Ptot 1.8 W R thJA S 300 K/W RthJC ¿83 K/W 932 â'"â'" ~ 224-8 Gâ'"03 2SC D â  Ã
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OCR Scan
CK886 Q68000-A4573 Q62702-F134 Q62702-F135 A 933 S transistors br 2222 npn 2N2221 2221-2N 2N2222 N 2222

100v 3A silicon controlled rectifier

Abstract: da1002 . \ \ \ \\ \ 20 40 60 80 100 120 140 160 180 200 Tteatjâ'" LEAD TEMPERATURE (°C) 2542 Gâ'"03 PAGE 3 LUCAS
-
OCR Scan
DA1000 DA1001 100v 3A silicon controlled rectifier da1002 DA100Z DA1000/1/2 DO-15

N6055

Abstract: RCA-2N6055 Gâ'"03 3875081 G E SOLID STATECI »E| 3Û7S0Û1 D017S37 S _Darlington rower Transistors 2N6055
-
OCR Scan
2N6056 RCA-2N6055 N6055 SUS CIRCUIT TEKTRONIX TRANSISTORS TYPES OF TRANSISTORS darlington npn rca 0D17534 100-W 2N6Q56 S2CS-I9920RI

V10390

Abstract: C67078-A1607-A2 reverse diode If = /(Vsd) parameter: 7], fp - 80 us (spread) 0 0,5 1,0 1,5 2,0 2,5 V 3,0 392 0974 Gâ'"03
-
OCR Scan
C67078-A1607-A2 V10390

siemens CAPACITOR gpf

Abstract: siemens 81049 - a-5 â'"+-1- -40-5- a 0.6 mm 0 5.8 mm minimal distance 1.3 + 0.1 138 0190 Gâ'"03
-
OCR Scan
siemens CAPACITOR gpf siemens 81049 din 41332 gpf CAPACITOR siemens siemens gpf 100 gpf CAPACITOR 8X049 8X046 5X049

sd 695

Abstract: GA-08 -G-B02 41695-2033 41695-G-A03 41695-2005 41695-G-B03 41695-2034 41695-G-A04 41695-2002 41695
-
OCR Scan
sd 695 GA-08 NB17 GA05 gb04 695-N-B UL94V-D UL94V-0 PS-08-50 PS-40-02 PS-45499-002 PK-4I695-OOI

IN4249

Abstract: 1758 Gâ'"03 7294621 PQWEREX INC 74 7 2 ^ 5 1 0D0l3Sä M A X IM U M ALLOW ABLE DC
-
OCR Scan
IN4249 1N4305 1N4245-49 IN4245 IN4246 IN4247 IN4248

T529C

Abstract: PST529C power-ON delay time. 24 1170 Gâ'"03 //i niTSUni ELECTRIC CO LT» MÃE D % MONOLITHIC IC b550575
-
OCR Scan
PST529 PST529C PST529D PST529E PST529F PST529G T529C PST5291 MITSUMI ELECTRIC components STS20/523A 150//A

BDW 16.24K5000-C2-5

Abstract: ¿85 ¿5 K/W K/W 1 ) v à 10 (p; fp â 10 ns 479 1856 Gâ'"03 2SC » â  Ã
-
OCR Scan
BDW 16.24K5000-C2-5 Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 Q60204-Y12-B

GG11

Abstract: GD08 41695-2041 41695-2042 ENG. NO. 41695-G-A02 41695-G-A03 41695-G-A04 41695-G-A05 41695-G-A06 41695
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OCR Scan
GG11 GD08 GB11 41695 molex 41695 GA04 4I695- PK-41695-00 PK-4IS95-002 IS95-O PK-4I695-003 41695-G-GOB
Abstract: B a Ï b Ï 21 ±0.8 Ï G±0.3 Reel 1.75±0.1 â Dimentions A A-A MAC8
Original
8-10-M4

T6411M

Abstract: T64110 225 . . 35 . . 50 . M/js A's A W W â'¢C °C In-lb In-lb 830 _ 1366 Gâ'"03 3875081 G E SOLID
-
OCR Scan
7S001 T6401 T6411 T6421 T6411M T64110 T6411B T6411D RCA THYRISTOR reference book on triacs 9ZCS-27T33RI

M74HC244

Abstract: M74HC244-1P CopyRight 2003 29 34 Gâ'"03 ♦ MITSUBISHI ,_53 MITSUBISHI íDGTL LOGIC} 6249827 MITSUBISHI (DGTL LOGIC
-
OCR Scan
4000B 74LS244 M74HC244 M74HC244-1P M74HC244-1FP diode 1fp M74HC244-1P/FP M74HC244-1 25///W/ 20P2N

T210N

Abstract: 450C , heatsinktype KL42 3228 Gâ'"03 135 TELEFUNKEN ELECTRONIC T210N filC D fi'iSDD'ib OOQbia^ b â  AL66 7~ZS
-
OCR Scan
450C 1408C

BDY13

Abstract: bdy12 £85 ¿85 K/W Junction to case RthJC â5 ¿5 ¿5 K/W 1) va 10 (p; Ip i 10 ns 479 1856 Gâ'"03 2SC » â
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OCR Scan
BDY13 bdy12 BDV13 bdy 12 Q60204-Y12-C Q60204-Y12-D Q60204-Y13 Q60204-Y13-B Q60204-Y13-C Q60204-Y13-D
Abstract: T IC S 2. FO RW ARD VO LT AG E VS. FO RW ARD C U R R EN T 329 2836 Gâ'"03 3875081 -
OCR Scan
H23L1 S-42662 92CS-429S1
Abstract: GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 , SA36 SA37 SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05 Macronix International
Original
MX29VW160T/B 16M-BIT 16-BIT MX29VW160TXAC-12/TXAI-12 NOV/04/1998 PM0567

48-PIN

Abstract: GA08 GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 , SA36 SA37 SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05
Macronix International
Original
48-PIN GA08 ga09 NOV/19/1998 NOV/27/1998 DEC/03/1998 FEB/12/1999 MAY/17/1999 MAR/22/2000

ga01

Abstract: GA-08 GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 , SA36 SA37 SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05
Macronix International
Original
ga17 OCT/30/2000 NOV/20/2000 FEB/23/2001 JUN/06/2001
Abstract: GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 GA11 GA11 GA12 , SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05 GA05 GA05 GA05 GA06 GA06 Macronix International
Original

HPS082-0001

Abstract: D0650 0386 gâ'"03 3 This Material Copyrighted By Its Respective Manufacturer microelectronics i d
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HPS082-0001 D0650 Microwave PIN diode d0311 DFOC hps082 S31-8901 MILSTD-1772 MIL-STD-883 DD212 D02850 MIL-STD-1772

FIBER OPTIC toslink transmitter

Abstract: 8251AP within 3 seconds at 260°C (leave a distance of more than 1mm from the root). 3620 Gâ'"03 - 16 -
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OCR Scan
T-41-91 FIBER OPTIC toslink transmitter 8251AP tmp8251ap GI 8226 diode TA78005AP tmp8251

AMO 0210

Abstract: CD4024AT diagram (putta tbapar ënd 1 binary ttagaì. Fig. 8 â'" Typical propagation May tima vt CL. 526 3718 Gâ'"03
-
OCR Scan
CD4024A CD4024AT AMO 0210 ba607 430SS71 RCA-CD4024A C04024AQ MO-004-AG

direct replacement

Abstract: T7513 kn in parallel with less than 50 pF. 6 1562 Gâ'"03 AT&T MELEC (I C) 25E D â  GOSÃOEb
-
OCR Scan
T7513 T7513A-PE direct replacement T7513A-CM T7513A-EE 0050G2L T7513A

ST7528

Abstract: at VA1 -0.3 48 V GA02 I(VA1) Current in VA1 -1600 10 mA GA03 V(VA1x
Sitronix
Original
ST7528 160X100 132X128 SEG158 SEG159 COM50

st7528

Abstract: IC LA 4127 GA03 GAD'S GAD5 GAD6 GAÜ7 GAD8 GAD9 GAD10 GAD11 GAD 12 GAD13 GADM GAD15 GAD16 GAD17 GAD 15 GAD1& GAD20 GAD21 GAD22 GAD23 GAD24 GAD25 GAD26 GAD27 GAD28 GAD29 GA03C1 R 2. . AÜ2 Y4. G CW .#1 V.4. GC-'UE
Sitronix
Original
IC LA 4127 pin diagram of ic 4051 4051 IC circuit diagram sitronix ST7528 pin diagram of ic 4052 20 pin SDA 5450

ST7528

Abstract: 4052 IC circuit diagram SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 GA01 GA02 GA03 , SA36 SA37 SA38 SA39 GA01 GA02 GA03 GA04 GA05 BANK A GA06 GA07 GA08 GA09
Electronic Assembly
Original
4052 IC circuit diagram pin diagram of ic 4052 ic 556 datasheet 4812 ic data sheet circuit diagram for automatic voltage regulator pin diagram of ic 4052 14 pin COM88 COM67 COM68

Sitronix st7541

Abstract: sitronix ST7528 GA03 V(VA1x) Spannung an VA1x -0.3 7 V GA04 I(VA1x) Strom in VA1x GA05 V(VBL
-
Original
Sitronix st7541 D2164 pwm program in 8085 for adc db3 531 ST7541 COM25 COM99 COM89

GA03

Abstract: KL15   7^537 []0fc,ga03 fl07 â _137 This Material Copyrighted By Its Respective Manufacturer ST7548 IV -
iC-Haus
Original
MQFP44 KL15 KL15R KL15 wire G003 VG402 MFQ44 D-55294

LC502

Abstract: 20pmt04a Part No: GA0381 Date: 9/28/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level 38 mm (4.00 in) 8 Ohm ± 15% 800 Hz ± 160 Hz 80 dB/w ± 3 dB (See attached drawing) at 800 Hz 1 V at 1V 0.1 w 50 cm ave. at , : www.cui.com TITLE: Round frame paper cone - alnico magnet PART NO. PC FILE NAME: GA0381 COPYRIGHT 2006 BY CUI INC. ZRJ A UNITS: GA0381 DRAWN BY: REV: MM [INCHES] APPROVED BY
-
OCR Scan
LC502 20pmt04a csi 93c46 IC565 ycl 20PMT04A 10U/10V 93C46 29LVQ10 PLCC-32 20PMT04A N2907

48-PIN

Abstract: ga01 isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this topology
Macronix International
Original
MX29VW160TXXX MX29VW160BXXX

rvb 602

Abstract: regler ks 90 : High Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA10JT12-263 may be driven using , (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside driving, its datasheet provides additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~10 A, RG may be calculated
iC-Haus
Original
rvb 602 regler ks 90 GA06 VTU012 220-P02 G503

ST7548CQFP

Abstract: ST7548i of this document. Page 13 of 24 â iODbmb GÃ03132 m i IBM0117800M IBM0117800 IBM0117800P
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OCR Scan
16C550 TQFP80 ST7548CQFP ST7548i 115200B

83C795

Abstract: 33 50 Power Supply 5 V ± 5% 5 V ± 5% 5 V + 5% 107M177 Ga0361G SIS A T M - AT40493/ 392
-
OCR Scan
83C795 10BASE-T 83C790

LA 7673 diagrams

Abstract: 83C790 C l i t t t t fC l r â'™ ^LLi m co Q co a Q => Q < 8 I D D m il 03S17 m s ODAT
SMC Networks
Original
LA 7673 diagrams transistor ga62 83C690 ga48 GA59 LA 7673
Abstract: Refresh Cycle) CAs Hold Time (Self Refresh Cycle) 1AD36-00-MAY94 â  4b7SDêfl GÃ03111 G7T Token Electronics
Original
TPS1608DC TPS3316DC TPS5022DC TPUTX-4S-20 TPUTX-4S-30

3316D

Abstract: Thermal resistance vs. lead length & by SEMIKRON SIE D SEMIKRON INC Ã13bb71 03TCH 22fl «SEKG
Token Electronics
Original
3316D TPULF7032/7045 TPUTX-4S-40 TPUTX-4S-60

Axial fans

Abstract: FF14C-50A-R11B 50 27.3 B C 3-R1 .00 T YP. DETA c G±0.30 A
ebm-papst
Original
Axial fans KO-08/07-10 D-74673 D-78112 D-84030 MAL-47301 10F-I

Axialventilatoren

Abstract: w1g250hh current peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from
ebm-papst
Original
Axialventilatoren w1g250hh KO-07/07-3

logos 4012B

Abstract: 1LB553 isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this topology
-
OCR Scan
logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors 4057A transistor sr52 IEC179 TDA1510 TDA1510A

JRC 45600

Abstract: YD 803 SGS , GA03IDDJT30-FR4 The GA50SICP12-227 may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology , isolated evaluation gate drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available , . C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN , Voltage Isolation Barrier Figure 21: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2
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JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 ZOP020 ZOP021 ZOP023 ZOP022 ZOP024 ZOP025

GA0381

Abstract: Section CーC FF28- 5A-R11A-3H G±0.30 F min. G±0.30 C ï¼1.84) Section CーC
CUI
Original
Abstract: Detail a c c-c F Min. 1.56 TYP. G±0.30 E A TYP. F Min. c +0.10 Ø 1.50 0.00 QTY: 8.00 . YP 0T 3.0 Ø1 G±0.30 A TYP. c â  Emboss Tape Dimensions GeneSiC Semiconductor
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GA50JT06-258 12-DEC-2014 GA50JT06 00E-47 26E-26
Abstract: : High Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA05JT12-263 may be driven using , (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside driving, its datasheet provides additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~8 A, RG may be calculated GeneSiC Semiconductor
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05-JUN-2015 GA10JT12 833E-48 073E-26 39E-12

sa1442

Abstract: GG3 GG2 GG1 GGO 12/18 Juno 1995 137001^ GÃ03123 T7Ã â  2"280 This Material Copyrighted By Its
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sa1442 IBM0117800B 43G9614 43G9629

04fi

Abstract: m019 GENL INSTR/ POWER SSE D 3010137 Ga03flôb 0 T~Xb~0!T W005M THRU W10M MINIATURE SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 50 to 1000 Volts C U R R E N T - 1.5 Amperes FEATURES .340(8.6). .300(7.6) ,220 5.6) .200 5.1) 1.1 HIH. (27.9) 1.0 HIH. (25.41 n,.Q 32t.81) .028 (.71) .220 5.Ç) .180 4.6) This series is UL recognized under component index, file number E54214 Plastic material used carries Underwriters Laboratory (iammabiiity recognition 94V-0 High case dielectric
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04fi m019 M-022 80486 set Atmel 122 AT40493/392 AT40493 AT40392 160-P 3112Z 136A2Z
Abstract: Termination type B±0.20 C±0.20 D±0.10 E±0.20 F±0.50 G±0.30 7.20 2.54 10.30 -
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PM7323 RCMP-200 PM7322 RCMP-800 PMC-940903
Abstract: 100120140160 TEM PERATU RE ( ° C ) TEM PERATU RE ( ° C ) 1-332 315^557 0314D 44b -
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V17410A HY51V17410A HY51V1741 A0-A10 D36-00-MAY94 HY51V17410AJ

Semikron sK1 04

Abstract: gf-01 94v-0 CL230â'"0040â'"3 80 DXâ'"80â'"CV 8.5 12.5 60.4 68.1 G IF â  44T3237 GÃ03044
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Semikron sK1 04 gf-01 94v-0 Semikron sk 1 Semikron sk 1 gf 01 Semikron sK1 04 95 gl04 B9-11 T-03-15
Abstract: Memories 16.1 16-1 16.1.1 GA033/GA034 Power Equation 16-2 16.1.2 16.2 One Port RAM GA033/GA034 GA033/GA034 Timing and Area Tables 16-2 16-4 16.2.1 DZ043/DZ044 Power Equation , Block Schematic 16.1 Read Waveforms for GA033/GA034 16-2 16.2 Write Waveforms for GA033 , Speed Buffers 15-95 15.10 Special lOs Oscillators 15-143 16.1 8 Word GA033/GA034 16-3 16.2 xxviii 15-129 15.11 64 Word GA033/GA034 16-3 LCA500K Preliminary Design Manual DDK Connectors
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FF14C OZ63-221 CM5-42-10 M705-GRN360-K2-V
Abstract: GA03JT12-247   Normally â'" OFF Silicon Carbide Junction Transistor VDS VDS(ON) ID , ://www.genesicsemi.com/index.php/sic-products/sjt nA nA Pg1 of 7 GA03JT12-247   Electrical Characteristics , Characteristics at 125 °C Pg2 of 7 GA03JT12-247 , 7 GA03JT12-247   Figure 9: Typical Hard-switched Turn On Waveforms Figure 10: Typical , GA03JT12-247     Figure 15: Typical Gate Current Waveform Figure 17: Power Derating Curve GeneSiC Semiconductor
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2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9
Abstract: 30.0 30.0 30.0 30.0 30.0 30.0 30.0 30.0 30.0 Part Number GA030-S03 GA030-S05 GA030-S12 GA030-S15 GA030-S24 GA030-S48 GA030-D05 GA030-D12 GA030-D15 GA030-D24 GA030-D0512 GA030-D0515 GA030-D0524 Output Voltage (VDC) 3.3 5 12 15 24 48 ±5 ±12 ±15 ±24 Vo1=+5,Vo2=+12 Vo1 , Yuan Dean Scientific CO.,LTD GA030 SERIES 30Watt, Single & Dual Output ,AC/DC Power Module , Scientific CO.,LTD GA030 SERIES 30Watt, Single & Dual Output ,AC/DC Power Module Converter General GeneSiC Semiconductor
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GA05JT03-46 GA05JT0346 GA05JT03 16E-10 021E-10
Abstract: current peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor
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26-MAR-2015 GA50SIPC12 398E-9 026E-09 0E-03 99E-16

5ar11

Abstract: Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA100JT12-227 may be driven using a , (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside driving, its datasheet provides additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , ‰¥ ~14 A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~14 A, RG may be
DDK Connectors
Original
5ar11
Abstract: presented below. B:1: High Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA16JT17 , drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside , GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN CG1 VGL VGH Signal , Figure 24: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 , . For the GA16JT17-247, RG must be reduced for ID ≥ ~13 A for safe operation with the GA03IDDJT30-FR4. DDK Connectors
Original
Abstract: , GA03IDDJT30-FR4 The GA50JT17-247 may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology , isolated evaluation gate drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available , . C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN , Voltage Isolation Barrier Figure 24: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2 GeneSiC Semiconductor
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GA05JT12 254E-12 0E-1209

LX 2272

Abstract: V10560 lb). SSbSTDS GÃ03730 76^ 2-12 When the FSEL input is LOW, the data input during the current
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LX 2272 V10560 ic lx 2272 10-20X3 ci ob 2269 bq2011 2011J
Abstract: peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from -
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MIL-STD-202

8630-3065N

Abstract: Number GA03JT12-247 GA05JT12-247/263 GA06JT12-247 GA10JT12-247/263 GA20JT12-247/263 GA50JT12 , GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation , Compliant Section I: Introduction The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC , drive solutions. Figure 1: Simplified GA03IDDJT30-FR4 Gate Drive Board Block Diagram Section II: Compatibility with SiC SJTs The GA03IDDJT30-FR4 has an installed RG of 3.75 â"¦ on-board which may need to be
FCI
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8630-3065N CDC-DSUBWEB-01/07-E
Abstract: Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA04JT17-247 may be driven using a High , continuous gate current while in on-state. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4 , additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~8 A, RG may be calculated -
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EL8001E EL8001 EL8001EB 2HZ-20
Abstract: Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA20JT12-247 may be driven using a High , continuous gate current while in on-state. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4 , additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~13 A, RG may be calculated -
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CL230-0111-0 DX40-68P CL230-0039-4 DX-50-C 44R3237

jk 13001 TRANSISTOR

Abstract: jk 13001 : High Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA20JT12-263 may be driven using , (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside driving, its datasheet provides additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~13 A, RG may be calculated
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jk 13001 TRANSISTOR jk 13001 13001 S 6D TRANSISTOR jk 13001 h signo 723 operation manual jk 13001 E D-102 002Q116 GA043/GA044 043/G

IXDD614

Abstract: ®¹ã®ã"確èªã''ãé¡˜ã"致しますã'' http://www.ddknet.co.jp G±0.30 E D A æ­é¢ A-A ±0.10 ±0.10 D B B 4.00 2.00±0.10 A E±0.10 22.25 A G±0.30
GeneSiC Semiconductor
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IXDD614 GA03JT12 26-AUG-2013 01E-49 00E-27 37E-10 97E-10

DM024

Abstract: oti 2168 , GA03IDDJT30-FR4 The GA100SICP12-227 may be driven using a High Speed, Low Loss Drive with Boost Capacitor , isolated evaluation gate drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available , . C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN , Voltage Isolation Barrier Figure 25: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2
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DM024 oti 2168 transistor bf 175 CM17B LCA300K 5304A0M LCA310K CW33000 CW803 CW807
Abstract:   GA03JT12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE (version 4) software for simulation of the GA03JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.2 $ * $Date: 26-AUG-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place , GA03JT12 NPN + IS 3.01E-49 + ISE 1.00E-27 + EG 3.2 + BF 58.5 + BR 0.55 + IKF 200 + NF 1 + NE , -1.24 + TRC1 5.00E-3 + VCEO 1200 + ICRATING 3 + MFG GeneSiC_Semiconductor *End of GA03JT12 SPICE Yuan Dean Scientific
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264VAC 115VAC 230VAC
Abstract: Part Number Output Wattage (W) Output Voltage (VDC) Output Current (mA) GA030-S03 GA030-S05 GA030-S06 GA030-S07 GA030-S08 GA030-S09 GA030-S10 GA030-S12 GA030-S13 GA030-S14 GA030-S15 GA030-S16 GA030-S18 GA030-S24 GA030-S27 GA030-S36 GA030-S48 GA030-D05 GA030-D12 GA030-D15 GA030-D24 GA030-D0305 GA030-D0512 GA030-D0515 GA030-D0524 26.4 40.0 40.0 40.0 40.0 40.0 40.0 42.0 42.0 , Yuan Dean Scientific CO.,LTD GA030 SERIES 26-48Watt, Single & Dual Output ,AC/DC Power Module GeneSiC Semiconductor
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2N7636-GA 2N7636 50E-02
Abstract: . EARLY WRITE CYCLE 105 GOLDSTAR TECHNOLOGY I N C / 34E D D 4G2Ô7S7 Ga032QS 4 * G S T T GeneSiC Semiconductor
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29-MAY-2015 GA100JT12
Abstract: © INCOMING T P S U P P LY L1 L2 L3 O W IRIN G DIAGRAM FOR 3 PH ASE S U P P L Y WITH 400 V COIL M FR S P A R T NOS: D O LSW 5.5400 D O LSW 7.5400 DOLSW 11400 BF0910A 400/ B F1810A 400/ BF2510A 400 CONTACTOR GA016A LM 2TC10 S TA R T CONTACT GA016A/GA025A/GA032A ISO LATO R 'P o w e r link cab le sizin g : 5.5 kW 1 .5 m m ? WARNING TO PREVENT R IS K OF DAMAGE Ofl SA FETY HAZARDS. THIS EQUIPMENT SHOULD ONLY B£ IN STA LLED BY S U ITA B LY QUALIFIEO OR COMPETENT GeneSiC Semiconductor
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29-JAN-2015 4E-12 014E-09 500E-3
Abstract: current peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor
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GA50JT17 00E-3

TT 2246

Abstract: Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA20SICP12-263 may be driven using a , (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside driving, its datasheet provides additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , for ID ≥ ~14 A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~14 A, RG may
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TT 2246 LF2246 TMC2246 T-O0000000000 LF2246QC33 LF2246QC25 LF2246QC15
Abstract: 11/2~4 inch alnico magnet, paper cone speaker 0 GA0571H GA0381 GA0401 GA0451 GA0501 GA0661 GA0666 GA0701 GA0771 GA0771B GA0776 GA0876 GA0926 GA1006 frame style R: round S: square P: pincushion O: oval MODEL NO. SIZE FRAME STYLE RESONANT FREQ(HZ) ±20% FREQ. RANGE (HZ) POWER INPUT(W) MAGNET SIZE MAG. WEIGHT (OZ) DEPTH (M/M) INCH M/M NOM. MAX. GA0381 m 38 R 700 f0-5K 0.1 0.2 13x10 0.35 16.8 GA0401 iy2 40 R 650 f0-5K 0.1 0.2 13x10 0.35 17.5 GA0451 IK 45 R 600 fO-4K 0.2 0.3 13x10 0.35 18 GeneSiC Semiconductor
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2N7640-GA 2N7640 20E-03
Abstract: the rising edge of FWCLK when the transmit FIFO is bypassed. 26 IG G m il GÛ03173 17fl GeneSiC Semiconductor
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FOD3182 IXDN609 FOD3182S MEV3S1205SC MGJ2D122005SC IXDN609SI
Abstract: Part No: GA0381M Date: 9/29/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level Response Input power Operation Buzz, rattle, etc. Magnet Load test Heat test Humidity test 38 mm (1.50 in) (See attached , : www.cui.com TITLE: Round frame mylar cone - alnico magnet PART NO. PC FILE NAME: GA0381M COPYRIGHT 2006 BY CUI INC. ZRJ A UNITS: GA0381M DRAWN BY: REV: MM [INCHES] APPROVED BY GeneSiC Semiconductor
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30-JAN-2015 GA04JT17
Abstract: peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor
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GA20JT12
Abstract: , GA03IDDJT30-FR4 The GA10SICP12-247 may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology , isolated evaluation gate drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available , . C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN , Voltage Isolation Barrier Figure 20: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2 GeneSiC Semiconductor
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Abstract: presented below. B:1: High Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA50JT12 , drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside , GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN CG1 VGL VGH Signal , Figure 24: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 , . For the GA50JT12-247, RG must be reduced for ID ≥ ~14 A for safe operation with the GA03IDDJT30-FR4. DDK Connectors
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FF33-25A-R11A FF33-29A-R11A FF33-35A-R11A FF33-39A-R11A
Abstract: Neuentwicklung / Not for new design Siemens Aktiengesellschaft 35 Ã235bü5 GÃ0370'i TSH GeneSiC Semiconductor
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GA100SIPC12 3E-05 86E-09 00E-10 54E-19
Abstract: 3121557 03D75 flfi4 â  1: n EL2243C EL2243C Dual Fast Single-Supply Decompensated Op Amp GeneSiC Semiconductor
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GA030

Abstract: 47 OUT through an analog switch. 1-69 TOKO, Inc. â  m ?b3E NOTES 031G4 3TS
Yuan Dean Scientific
Original
26-48W EN60950-1 EN55022 EN55024

headland 386

Abstract: b2211 referenced notes on page 3-68. 3-64 ^ â'˜i b T D GÃ03ÃS1 0Tb 20 xm xxxxxxxxxm c
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headland 386 b2211 full subtractor using ic 74138 transistor zo 607 MA 7S LCB300K DB04-000049-00

71c1000

Abstract: GA032 peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from
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GM71C1000 GM71C1000-80 GM71C1000-12 71c1000 GA032 trw 1014 RAS 0510 71C1000 GM71C1000-10 402A7S7

LS Contactor

Abstract: Bf2510a '"1500) .model qp pnp (is= 5e â'"15 bf = 1500) .ends 2-47 3 1 2 ^ 5 7 GÃ031Ã"L. 540 EL2008C EL2008C
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LS Contactor contactor connection BF1810A BF251 bf1810a400 TH CONTACTOR GA016A/GA025A/GA032A
Abstract: S^CUI INC 9615 SW Allen, Suite 103 Beaverton, OR 97005 Phone: (503) 643â'"4899 800-275-4899 Fax: (503) 372-1266 Website: www.cui.cozr>. Specifications 1 Part No. GA0381 2 Nominal Size 38 mm. 1 1/2" inch 3 Impedance 8 a ± 15% at 800 Hz. 1 V. 4 Resonance 800 Hz.± 160 Hz. FO Hz. 1 V. 5 S.P , COPYRIGHT BY CUI INC. PART NO. GA0381 UNITS: mm DRAWN BY: PAGE NO: 1 of 2 17±0.3 I c 6±0.2, _L T , ) 643-4899 800â'"275â'"4899 Fax: (503) 372-1266 Website: ww.cui.com TITLE: PART NO. GA0381 DRAWN BY: UNITS GeneSiC Semiconductor
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2N7635-GA 2N7635
Abstract: , GA03IDDJT30-FR4 The GA20SICP12-247 may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology , isolated evaluation gate drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available , . C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN , Voltage Isolation Barrier Figure 20: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2 GeneSiC Semiconductor
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GA20SICP12 752E-12 01E-09 50E-03 48E-17 15E-09

SED13305

Abstract: epson e-1330 Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA05JT12-247 may be driven using a High , continuous gate current while in on-state. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4 , additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL , GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on , A for safe operation with the GA03IDDJT30-FR4. For operation at ID ≥ ~8 A, RG may be calculated
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SED1330FBA SED13305 epson e-1330 E-1330 6264 SRAM E-1330 ic manual E-1330 lcd manual SED1330F/1335F/1336F 330F/1335F/1336F 1335FBB SED1336F0A SED1335F0A

speaker oval

Abstract: GA0701 (GA03IDDJT30-FR4) connected to the Test Boardâ'™s Gate Drive Connection March 2015 http://www.genesicsemi.com
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speaker oval GA0506 GA0571 GA0576 O-21K O-13K 0-10K
Abstract: Numbers covered by this Qualification Part Number GA0180007 GA0180011 GA0200011 GA0240002 GA0350001 GA0360002 GA0360004 GA0360005 GA0360008 GA0400003 GA0400004 GA0400005 GA0440001 GA0610004 GA0760002 -
OCR Scan
PM7345 TA-TSY-000773 TA-TSY-000772 PM4341 PM6341 PCM30
Abstract: , GA03IDDJT30-FR4 The GA10SICP12-263 may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology , isolated evaluation gate drive board (GA03IDDJT30-FR4) utilizing this topology is commercially available , . C2 +12 V GA03IDDJT30-FR4 Gate Driver Board VGL VCC High U3 C5 VCC High RTN , Voltage Isolation Barrier Figure 20: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2 CUI
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Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR GA03JT12-247   Normally â'" OFF Silicon Carbide Junction Transistor VDS RDS(ON) ID @ ,   GA03JT12-247   Electrical Characteristics Parameter Symbol Conditions Ciss Crss/Coss EOSS ,   GA03JT12-247   Figure 3: Typical Output Characteristics at 175 °C Figure 4: Typical Gate Source , /commercial-sic/sic-junction-transistors/ Pg3 of 10  GA03JT12-247   Figure 9: Typical Turn On Energy , /commercial-sic/sic-junction-transistors/ Pg4 of 10  GA03JT12-247   Figure 15: Forward Bias Safe
Element14 Catalog
Original
Arduino Mega2560 arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct CY8C38 CY8C29 A000046 A000047 A000005 A000010

kss 152a laser

Abstract: ILP toroidal transformer . B:1: High Speed, Low Loss Drive with Boost Capacitor, GA03IDDJT30-FR4 The GA10JT12-247 may be , board (GA03IDDJT30-FR4) utilizing this topology is commercially available for high and lowside driving, its datasheet provides additional details about this drive topology. C2 +12 V GA03IDDJT30-FR4 , 24: Topology of the GA03IDDJT30-FR4 Two Voltage Source gate driver. The GA03IDDJT30-FR4 evaluation , GA10JT12-247, RG must be reduced for ID ≥ ~10 A for safe operation with the GA03IDDJT30-FR4. For
LOVATO Electric
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kss 152a laser ILP toroidal transformer Diode BFK 66A LCD display 1602A wiring diagram STAR DELTA motor sequential starter 6Kv marking 5d capacitor RS232/RS485 240VAC 110-120VAC EXP10 RS232/TTL

2n2222 spice model

Abstract: GA03JT12-247   Normally â'" OFF Silicon Carbide Junction Transistor VDS VDS(ON) ID , GA03JT12-247   Electrical Characteristics Parameter Values typ. Symbol Conditions Cgs , Characteristics at 125 °C Pg2 of 8 GA03JT12-247 , of 8 GA03JT12-247   Figure 9: Typical Hard-switched Turn On Waveforms Figure 10: Typical , GA03JT12-247     Figure 15: Typical Gate Current Waveform Figure 17: Power Derating Curve
GeneSiC Semiconductor
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2n2222 spice model 2N7637-GA 2N7637 73E-10 86E-10 90E-2
Abstract: 725-5525 725-5538 725-5535 © INCOMING TPN S U P P LY L1 L2 L3 © W IRIN G DIAGRAM FOR 3 PH A SE S U P P L Y W ITH 230V COIL M FR S P A R T NOS D O LSW 5.5230 DO LSW 7.5230 DÛLSW 11230 BF0910A230/ 8F1810A 230/ BF2510A 230 CONTACTOR GA016A/GA025A/GA032A © WARNING TO P R L V E N T R IS K OF D A M A G E O fl S A F E T Y H A Z A R D S . T H IS EQ U IPM EN T S H O U LD O M IY B£ IN S T A L L E D B Y S U IT A B L Y Q U A L IFIE O OR C O M P ET E N T P E R S O N S AND IN AC C O R GeneSiC Semiconductor
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GA10SICP12 427E-12 1373E-12 55E-15 71739E-05 40E-10
Abstract: EQUAD. RSTB is a Schmitt-trigger input with integral pull-up. 26 TOOMm Ga03112 2DT P GeneSiC Semiconductor
Original
Abstract: 30.0 30.0 30.0 30.0 Part Number GA030-S03 GA030-S05 GA030-S12 GA030-S15 GA030-S24 GA030-S48 GA030-D05 GA030-D12 GA030-D15 GA030-D24 GA030-D0512 GA030-D0515 GA030-D0524 Output Voltage (VDC , Yuan Dean Scientific CO.,LTD GA030 SERIES 30Watt, Single & Dual Output ,AC/DC Power Module Converter FEATURES: G A 030 - S 03 Universal Input 90~264VAC High Efficiency Up To 85% Protection , :886-6-2512628 Fax:886-6-2511858 DATE:2009-7-10 Yuan Dean Scientific CO.,LTD GA030 SERIES 30Watt -
OCR Scan

dm024

Abstract: A992 transistor and its equivalent . DETAIL b c 0 +0.1 0 .50 1 1.75 USER DIRECTION OF FEED G±0.30 A Leader:10
-
OCR Scan
A992 transistor and its equivalent LB 11917 LEA300K DB04-000048-00 FALU32 FMPY32 FALU32P FMPY32P
Abstract: ' User direction of feed 165° ~180° c Detail a F Min. Section c-c G±0.30 E , G±0.30 c â ã'¨ãƒ³ãƒã'¹ã'­ãƒ£ãƒªã'¢ãƒãƒ¼ãƒ—寸法図 TO: P/O No.: P. TY 1.75 -
OCR Scan
EL2243 MIL-I-45208A EL2243CM M2243 312R557 QQQ3077
Abstract: kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this -
OCR Scan
TK10661

TRANSISTOR 2sC 6090 EQUIVALENT

Abstract: transistor c1364 S^CUI INC 9615 SW Allen, Suite 103 Beaverton, OR 97005 Phone: (503) 643â'"4899 800-275-4899 Fax: (503) 372-1266 Website: www.cui.cozr>. Specifications 1 Part No. GA0381M 2 Nominal Size 38 mm. 1 1/2" inch 3 Impedance 8 Q ± 15% at 800 Hz. 1 V. 4 Resonance 700 Hz. ± 140 Hz. FO Hz. 1 V. 5 , COPYRIGHT BY CUI INC. PART NO. GA0381M UNITS: mm DRAWN BY: PAGE NO: 1 of 2 17±0.3 I COPYRIGHT 1997 BY CUI , Fax: (503) 372â'"1266 Website: www.cui.com TITLE: PART NO. GA0381 DRAWN BY: UNITS: mm Page No. 2 of 2
DigiKey Electronics Catalog
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TRANSISTOR 2sC 6090 EQUIVALENT transistor c1364 transistor c2053 C1364 transistor TRANSISTOR C3068 pcc pw3 423-1017-ND 423-1018-ND 423-1021-ND 423-1024-ND 423-1023-ND 423-1026-ND
Abstract: INCH ALNICO & FERRITE MAGNET, MYLAR CONE SPEAKER Q O ¿r.V, GA0381M GA0401M GA0451M GA0501M GA0506M GA0506M-1 GA0571M GA0576M GA0661M GA0666M A GA0701M GA0771M GA0776M A GA0876M GF0501M (A GF0506M GF0502M GF0502BM frame style R: round S: square P: pincushion O: oval MODEL NO. SIZE FRAME STYLE RESONANT FREQ(HZ) ±20% FREQ. RANGE (HZ) POWER INPUT(W) MAGNET SIZE MAG. WEIGHT (OZ) DEPTH (M/M) INCH M/M NOM. MAX. GA0381M iy2 38 R 650 f0-5K 0.2 0.3 13x10 0.35 17 GA0401M Wz 40 R 550 fO-6K 0.2 0.3 13x10 -
OCR Scan
PSD311L PSD311L-25L PSD311L-25U PSD311L-25J PSD311L-25UI PSD311L-30J
Abstract: CURRENT, l,M , (AMPERES) 217 POUEREX INC m M B te x DS i F ^ E i M b E l GÃ03Gb3 S GeneSiC Semiconductor
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2N7638-GA 2N7638
Abstract: GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 , SA36 SA37 SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05 -
OCR Scan
EL2008 EL2009 EL2020 M2008
Abstract: C±0.3 4.00 D(max) 2.92 E±0.3 1.27 F±0.3 1.02 G±0.3 4.32 H±0.3 2.50 I -
OCR Scan
STM-16/STS-48 VSC8023/VSC8024 VSC8024 VSC8023 STM-4/STS-12 STS-48
Abstract: R.ohm QUALITY-RELIABILITY A I r* BA514 ( * BA5141.-J.S , J - ~J\s J- Salile mt - ic?\ vif^.ti.'höv* a^f'ini^ic2Wo)fii At/j< isen. U/J^sip â  ft (Features) 1. 9V> in (THD 10%) co M I ¿>a 2. SIL» 8pinT\ ^o r-rOo '1. 'J v 5. NAB f zi-y-rtf/Vj- yy-Jt LTOgJfl// ré òo ( 1001 Iz/54dBs 1K H/.MOdB) â  m ÌÉ (Application) 'Kâ'" V y V y % /?K - 9 J) \,=r - J L> Zi- V {Physical Dimensions) ^ï-Ji» K 19. G±0.3 13.2±0.2 1.2H / 2. M ±0.3 2.5^ I 2 3 * S -
OCR Scan
Abstract: GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 , SA36 SA37 SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05 GeneSiC Semiconductor
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00E-03 54E-13
Abstract: ) Size A Max B Max C Max D Max E Max F±0.3 G±0.3 H Max J Max K Max L  GeneSiC Semiconductor
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Abstract: Dimensions (mm) Size A Max B Max C Max D Max E Max F±0.3 G±0.3 H Max J Max K GeneSiC Semiconductor
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GA100SBJT12-FR4

srx7204-e

Abstract: SRX6533-E "C Ptot 0.5 W Ptot 1.8 W R thJA S 300 K/W RthJC ¿83 K/W 932 â'"â'" ~ 224-8 Gâ'"03 2SC D â  Ã
Pericom Semiconductor
Original
GA1000003 GA2500016 GA5410001 NMP080 NYP035A-18 NYP040-20 srx7204-e SRX6533-E SRX4011-E NYP400-20-E SRX7161-E GA0800007 GA0800009 GA1000010 GA1100002 GA1100011
Abstract: GA01 GA02 GA03 GA04 GA05 GA06 GA07 GA08 GA09 GA09 GA09 GA10 GA10 GA10 GA10 GA11 GA11 GA11 GA11 GA12 , SA38 SA39 GA01 GA02 GA02 GA02 GA03 GA03 GA03 GA03 GA04 GA04 GA04 GA04 GA05 GA05 GA05 GA05 GA06 GA06 GeneSiC Semiconductor
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54E-22
Abstract: 1758 Gâ'"03 7294621 PQWEREX INC 74 7 2 ^ 5 1 0D0l3Sä M A X IM U M ALLOW ABLE DC GeneSiC Semiconductor
Original

ga10jt12

Abstract: - a-5 â'"+-1- -40-5- a 0.6 mm 0 5.8 mm minimal distance 1.3 + 0.1 138 0190 Gâ'"03
GeneSiC Semiconductor
Original
Abstract: -G-B02 41695-2033 41695-G-A03 41695-2005 41695-G-B03 41695-2034 41695-G-A04 41695-2002 41695 GeneSiC Semiconductor
Original

LS Contactor

Abstract: BF2510A £85 ¿85 K/W Junction to case RthJC â5 ¿5 ¿5 K/W 1) va 10 (p; Ip i 10 ns 479 1856 Gâ'"03 2SC » â
-
OCR Scan
A95A BF2510A230 55Kw motor 5.5KW
Abstract: 225 . . 35 . . 50 . M/js A's A W W â'¢C °C In-lb In-lb 830 _ 1366 Gâ'"03 3875081 G E SOLID -
OCR Scan
PM6344 PM4344

GA030-S05

Abstract: H125 250V T IC S 2. FO RW ARD VO LT AG E VS. FO RW ARD C U R R EN T 329 2836 Gâ'"03 3875081
Yuan Dean Scientific
Original
H125 250V rectifier 300 amp
Abstract: SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 GA01 GA02 GA03 , SA36 SA37 SA38 SA39 GA01 GA02 GA03 GA04 GA05 BANK A GA06 GA07 GA08 GA09 DDK Connectors
Original
OZ63-221CM5-42-10
Abstract: GA03 GAD'S GAD5 GAD6 GAÜ7 GAD8 GAD9 GAD10 GAD11 GAD 12 GAD13 GADM GAD15 GAD16 GAD17 GAD 15 GAD1& GAD20 DDK Connectors
Original

diode 0A70

Abstract: GA05JT01-46 diagram (putta tbapar ënd 1 binary ttagaì. Fig. 8 â'" Typical propagation May tima vt CL. 526 3718 Gâ'"03
GeneSiC Semiconductor
Original
GA05JT01-46 diode 0A70 GA05JT0146 GA05JT01 050E-2
Abstract: kn in parallel with less than 50 pF. 6 1562 Gâ'"03 AT&T MELEC (I C) 25E D â  GOSÃOEb -
OCR Scan