G9281-14 KIRDB0290EA KIRDB0291EA KGPDA0020EA D-82211 SE-171 KIRD1061E02

InGaAs PIN photodiode with preamp G9281-14 ROSA type, 1.3/1.55 µm, 622 Mbps Features Applications l 1.25 mm sleeve type

PHOTODIODE InGaAs PIN photodiode with preamp G9281-14 G9281-14 ROSA type, 1.3/1.55 µm, 622 Mbps Features Applications l 1.25 mm sleeve type ROSA (Receiver Optical l SDH/SONET Sub-Assembly) l Optical fiber communication l High-speed response: 622 Mbps l High gain with AGC (Auto Gain Control): 2.9 V/mW (-22 dBm) l Low power supply voltage: 3.3 V l Differential output l Sensitivity: -5 to -32 dBm Typ. I Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage Operating temperature Storage temperature *1: No condensation Symbol Vcc Topr Tstg Value -0.3, +3.8 -20 to +70 *1 -40 to +85 *1 Unit V °C °C I Electrical and optical characteristics (Ta=25 °C, Vcc=3.3 V, Vee=0 V, RL=500 W * , l=1310 nm, unless otherwise noted) Parameter Photo sensitivity * 2 Supply current Output bias voltage Cut-off frequency * 2 Low cut-off frequency * 2 Noise equivalent power * 2, *3 Symbol S Icc Vo fc fc-L NEP Minimum receivable sensitivity Pmin Maximum receivable sensitivity Pmax Condition Pin= -30 dBm *3 Dark state, RL=¥ Dark state, RL=¥ Pin= -30 dBm, -3 dB Pin= -30 dBm, -3 dB Dark state, to 467 MHz 622 Mbps, NRZ, PN=23, BER=10 -10 , Extinction ratio=8.2 dB Min. 10 380 - Typ. 16 30 1.5 550 60 95 Max. 40 126 - -32 - - -5 - Unit V/mW mA V MHz kHz nWrms dBm *2: Output: Capacitive coupling This module should be used with a load resistance larger than 500 W. *3: Single-ended (Vout+) measurement PRELIMINARY DATA Mar. 2003 1 InGaAs PIN photodiode with preamp I Photo sensitivity vs. average input optical power I Bit error rate (Typ. Ta=25 °C, Duty ratio=50 %, Pulse width=10 ns) (Typ. Ta=25 °C, Bit rate=622 Mbps, PN=23) 10-3 10-4 BIT ERROR RATE PHOTO SENSITIVITY (V/mW) 100 G9281-14 G9281-14 10 -5 10 10-6 -7 10 -8 10 10-9 -10 10 -11 1 -40 -30 -20 -10 10 10-12 -38 -37 -36 -35 -34 -33 -32 -31 -30 -29 -28 0 AVERAGE OPTICAL INPUT POWER (dBm) AVERAGE OPTICAL INPUT POWER (dBm) KIRDB0290EA KIRDB0290EA KIRDB0291EA KIRDB0291EA I Dimensional outline (unit: mm, unless otherwise noted: ±0.15) I Eye diagram 2.92 4.88 5.08 Vout+ 2.72 4.04 ± 0.05 4.64 1.27 ± 0.05 Bit rate=622 Mbps, PN=23, =1310 nm Pin= -25 dBm 4.17 ± 0.05 6.86 ± 0.5 Vout- 3.38 ± 0.05 1.25 5.94 ± 0.07 5.94 ± 0.07 0.3 2.95 ± 0.1 2.54 Vcc VoutVee Vout+ 6.6 5.4 KGPDA0020EA KGPDA0020EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1061E02 KIRD1061E02 2 Apr. 2003 DN