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G marking diode

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Abstract: BBY57 BBY57. Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series , Marking 55 5 55 D5s * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V , -19-2003 BBY57 BBY57. Diode capacitance CT = (VR ) f = 1MHz 40 pF Normalized diode capacitance C(TA) /C(25 ... Infineon Technologies
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10 pages,
564.42 Kb

BBY57-05W E6327 BBY57-02W BBY57 TEXT
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Abstract: BBY57 BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low series , single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating , Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = , BBY57 BBY57. Diode capacitance CT = (VR) f = 1MHz Normalized diode capacitance C(TA)/C(25°C)= (TA); f ... Infineon Technologies
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10 pages,
117.7 Kb

BB 555-02V E7912 SP000745054 BBY57-05W H7902 cu marking code diode DIODE Sp marking code PG-SCD80-2-1 E6327 H6327 BBY57 BBY57-02L BBY57-02V BBY57-02W TEXT
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Abstract: BB545 BB545 /BB565 /BB565. Silicon Variable Capcitance Diode For UHF-TV-tuners High capacitance ratio Low , SC79 Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white U CC C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R , current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V , . Diode capacitance CT = (VR ) f = 1MHz Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz VR = ... Infineon Technologies
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9 pages,
504 Kb

BB545 /BB565 TEXT
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Abstract: BB535 BB535 /BB555 /BB555. Silicon Tuning Diode For UHF-TV-tuners High capacitance ratio Low series , Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white S BB B Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current , 30 V, TA = 85 °C Electrical Characteristics Parameter AC Characteristics Diode capacitance VR = 1 V , Application Note 047 2 Nov-07-2002 BB535 BB535 /BB555 /BB555. Diode capacitance CT = (VR ) f = 1MHz 20 pF - ... Infineon Technologies
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10 pages,
546.73 Kb

CT 0.4-P BB535 /BB555 TEXT
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Abstract: BBY57 BBY57. Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode â , 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25° unless otherwise specified C, Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA , - 10 VR = 8 V, TA = 85 ° C - - 100 AC Characteristics Diode capacitance pF , . Diode capacitance CT = ƒ (VR) Normalized diode capacitance f = 1MHz C(TA)/C(25°C)= ƒ(TA); f ... Infineon Technologies
Original
datasheet

9 pages,
104.79 Kb

BBY57 TEXT
datasheet frame
Abstract: BBY57 BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low , 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 8 V VR = 8 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 , - Unit max. nA typ. IR 10 100 pF 2 2005-11-24 BBY57 BBY57. Diode capacitance ... Infineon Technologies
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9 pages,
95.48 Kb

INFINEON date code marking BBY57 BBY57-02L BBY57-02V BBY57-02W TEXT
datasheet frame
Abstract: BBY57 BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low , Configuration single single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage , AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 16.5 17.5 18.6 , 0.3 - 2 2007-04-20 BBY57 BBY57. Diode capacitance CT = (VR) Normalized diode capacitance ... Infineon Technologies
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datasheet

9 pages,
94.7 Kb

SCD80 BBY57 BBY57-02L BBY57-02W bby57-02w 55 BBY57-05W Diode Marking N DIODE Q marking diode T3 Marking marking 55 marking ag diode BBY57-02V DIODE T4 T3 marking DIODE T4 marking 3 TERMINAL AEC marking INFINEON date code marking marking G SOT323 Transistor DIODE T4 marking diode marking code 7 marking code INFINEON TEXT
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Abstract: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage , Zener Diode SMD Diode Specialist Characteristics Curves (1N5221B-G Thru. 1N5267B-G) Fig.1- Power , (max) Marking Code Part Number Marking Code 1N5221-G ~ 1N5267-G 1N50XXB 1N50XXB Cathode band , 0.020(0.52)Typ. -Marking: Type number -Weight: 0.13gram Dimensions in inches and (millimeter , temperature. REV: B QW-BZ001 QW-BZ001 Page 1 Comchip Glass Silicon Zener Diode SMD Diode Specialist ... Original
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4 pages,
48.54 Kb

TEXT
datasheet frame
Abstract: Glass Silicon Zener Diode Comchip SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage , Page 2 Glass Silicon Zener Diode Characteristics Curves (1N5221B-G Thru. 1N5267B-G) Fig.1- Power , ) 0.197± 0.020 2.047 ± 0.059 0.047 (max) 0.236 ± 0.016 0.032(max) Marking Code Part Number 1N5221-G ~ 1N5267-G Marking Code 1N50XXB 1N50XXB Cathode band 1N 52 XXB XX : Product type marking code (see page , . -Marking: Type number -Weight: 0.13gram Dimensions in inches and (millimeter) Maximum Ratings and ... Comchip Technology
Original
datasheet

4 pages,
58.82 Kb

1N50xx 1N5250B 29 DIODE SMD CODE MARKING 1n5230b 1N5235B-G SMD marking CODE 91 1N5224B smd diode marking 10-50 1N5239B SMD 1N5229B SMD zener marking code 102 Zener diode smd marking code 24 1N5222B SMD diode 1N5221B-G 1N5267B-G SILICON PLANAR zener diode DO-35 1N5221B-G 1N5267B-G smd diode marking code g 1N5221B-G 1N5267B-G SMD ZENER DIODE MARKING CODE G 1N5221B-G 1N5267B-G zener voltage for diode 1N5231B 1N5221B-G 1N5267B-G ZENER DIODE marking l2 1N5221B-G 1N5267B-G 1N5221B-G 1N5221B-G 1N5267B-G 1N5267B-G TEXT
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Abstract: BBY58 BBY58. Silicon Tuning Diodes · Excellent linearity · High Q hyperabrupt tuning diode · Low , ) 0.4 0.6 0.6 0.6 1.4 1.4 0.4 Marking 88 8 88 8 yel. B5s B6s B8 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range , Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = , . max. Unit nA 10 100 2 Jul-25-2003 BBY58 BBY58. Diode capacitance CT = (VR) f = 1MHz 32 ... Infineon Technologies
Original
datasheet

12 pages,
337.25 Kb

sot323 marking code A.C marking code 62 3 pin diode MARK A SCD80 diode marking code 88 BBY58 BBY58-02L/V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
amplifiers Diode output offset current, I os(d) (max) (nA) Diode current amplifiers Amplification, G dn amplifier Laser supply: output current, I o (max) (mA) Diode current amplifiers Amplification, G dn (dB) Diode current amplifiers Amplification, G dn (dB) Diode current amplifiers -3 dB bandwidth, B (min. (double speed), t d(f) (ns) Diode current amplifiers Amplification, G dn (dB) Diode current amplifier Laser supply: output current, I o (max) (mA) Diode current amplifiers Amplification, G dn (dB
/datasheets/files/philips/pip/tda1300t_tt_3-v2.html
Philips 14/02/2002 12.33 Kb HTML tda1300t_tt_3-v2.html
DATA SOT-93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value : 0.8m.N /CW 4/6 Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N U.S.A. Marking : Type number Cooling method: C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum current Per diode 30 A I F(AV) Average forward current d = 0.5 SOT-93 TO-247 Tc = 135 5 C Per diode 15 Per diode 220 A I RRM Peak repetitive reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3509.htm
STMicroelectronics 02/04/1999 6.78 Kb HTM 3509.htm
DATA SOT-93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value : 0.8m.N /CW 4/6 Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N U.S.A. Marking : Type number Cooling method: C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum current Per diode 30 A I F(AV) Average forward current d = 0.5 SOT-93 TO-247 Tc = 135 5 C Per diode 15 Per diode 220 A I RRM Peak repetitive reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3509-v1.htm
STMicroelectronics 14/06/1999 6.74 Kb HTM 3509-v1.htm
versus reverse voltage applied (typical values) (per diode). PACKAGE MECHANICAL DATA SOT-93 Marking PACKAGE MECHANICAL DATA TOP-3I (isolated) Marking : Type number Cooling method : C Weight : 5.3 g Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current Per diode 60 A I F(AV) Average forward current d = 0.5 SOT-93 TO-247 Tc = 125 5 C Per diode 30 A TOP-3I Tc = 1055C 1055C Per device 60 I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 400 A I RRM Peak
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4606-v1.htm
STMicroelectronics 02/04/1999 7.65 Kb HTM 4606-v1.htm
MECHANICAL DATA SOT93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N Maximum torque Parameter Value Unit I F(RMS) RMS forward current Per diode 35 A I F(AV) Average forward current d = 0.5 SOT93 / TO247 Tc=120 5 C Per diode 15 A TOP3I Tc=115 5 C Per diode 15 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 200 A Tstg Tj Storage and junction temperature range - 40 to + 150
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2970-v1.htm
STMicroelectronics 02/04/1999 8.14 Kb HTM 2970-v1.htm
versus reverse voltage applied (typical values) (per diode). PACKAGE MECHANICAL DATA SOT-93 Marking PACKAGE MECHANICAL DATA TOP-3I (isolated) Marking : Type number Cooling method : C Weight : 5.3 g Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward current Per diode 60 A I F(AV) Average forward current d = 0.5 SOT-93 TO-247 Tc = 125 5 C Per diode 30 A TOP-3I Tc = 1055C 1055C Per device 60 I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 400 A I RRM Peak
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4606-v2.htm
STMicroelectronics 14/06/1999 7.61 Kb HTM 4606-v2.htm
PACKAGE MECHANICAL DATA SOT93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque ://www.st.com Marking : Type number Cooling method : C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum diode 35 A I F(AV) Average forward current d = 0.5 SOT93 / TO247 Tc=120 5 C Per diode 15 A TOP3I Tc=115 5 C Per diode 15 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 200 A Tstg CHARACTERISTICS (Per diode) Symbol Test Conditions Min. Typ. Max. Unit trr T j = 25 5 C I F = 0.5A I R = 1A Irr =
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2970.htm
STMicroelectronics 20/10/2000 10.59 Kb HTM 2970.htm
forward current. (maximum values) (Per diode). STPR620CT/STPR620CF STPR620CT/STPR620CF 4/6 Cooling method : C Marking : Type U.S.A. http://www.st.com Cooling method : C Marking : Type number Weight : 2.23 g Recommended torque Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 10 A I F(AV) Average forward current d = 0.5 TO220AB Tc=125 5 C Per diode 3 A ISOWATT220AB ISOWATT220AB Tc=120 5 C Per device 6 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 30 A T stg Tj Storage temperature range Maximum
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3460.htm
STMicroelectronics 20/10/2000 8.59 Kb HTM 3460.htm
MECHANICAL DATA SOT93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value : 0.8m.N Maximum torque Parameter Value Unit I F(RMS) RMS forward current Per diode 35 A I F(AV) Average forward current d = 0.5 SOT93 / TO247 Tc=120 5 C Per diode 15 A TOP3I Tc=115 5 C Per diode 15 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 200 A Tstg Tj Storage and junction temperature range - 40 to + 150
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2970-v2.htm
STMicroelectronics 14/06/1999 8.1 Kb HTM 2970-v2.htm
diode). STPR620CT/STPR620CF STPR620CT/STPR620CF 4/6 Cooling method : C Marking : Type number Weight : 2.08 g Recommended U.S.A. Cooling method : C Marking : Type number Weight : 2.23 g Recommended torque value : 0.8m.N Maximum ) RMS forward current Per diode 10 A I F(AV) Average forward current d = 0.5 TO220AB Tc=125 5 C Per diode 3 A ISOWATT220AB ISOWATT220AB Tc=120 5 C Per device 6 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 30 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 - 65
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3460-v1.htm
STMicroelectronics 02/04/1999 6.51 Kb HTM 3460-v1.htm