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UC1612J Texas Instruments UC1612 Dual Schottky Diode ri Buy
UC1612L Texas Instruments UC1612 Dual Schottky Diode ri Buy
UC3612DP Texas Instruments UC3612 Dual Schottky Diode ri Buy

G marking diode

Catalog Datasheet Results Type PDF Document Tags
Abstract: BAV199 BAV199 Switching Diode Plastic-Encapsulate Diode Elektronische Bauelemente RoHS Compliant , range TJ, Tstg: -55 V G C H D J K o to +150 C SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G , 1.020 S 2.100 2.500 V 0.450 0.600 Marking JY Marking JY All Dimension in mm , 70 V nA mV IF=50mA Diode capacitance Reverse recovery time http ... Original
datasheet

2 pages,
110.29 Kb

MARKING JY SOT23 BAV199 JY marking diode marking 1200 JY diode bav199 JY marking marking JY top marking JY sot23 BAV199 abstract
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Abstract: ) CDBV6-54AD-G* CDBV6-54CD-G* Marking: KL6 Marking:KL7 * Symmetrical configuration, no orientation indicator. FITS CDBV6-54SD-G* Marking: KL8 3 000 CDBV6-54BR-G Marking: KLB 00PT CDBV6-54T-G Marking: KLA , SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage , flammability retardant classification. -Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 -Marking: Orientation: See diagrams below -Weight: 0.006 grams (approx.) -Marking: See diagrams below H H H ö ETÉrB ... OCR Scan
datasheet

2 pages,
77.45 Kb

VOLTAGE TRANSIENT SMD marking 320 SOT-363 marking CL SOT363 SMD 24 oe smd diode arrays smd marking CD smd marking device 10 SMD MARKING V G marking SMD PI CDBV6-54AD-G SMD kl7 smd marking rl CDBV6-54T/AD/CD/SD/BR-G CDBV6-54T/AD/CD/SD/BR-G abstract
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Abstract: requiring a extremely low leakage diode. EEP EMMY (fftniNT MWCI SOT-23 CASE The follow in g c o n , CMPD3003 CMPD3003 CMPD3003A CMPD3003A CMPD3003C CMPD3003C CMPD3003S CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE , CMPD3003C CMPD3003C DUAL, IN SERIES CMPD3003S CMPD3003S MAXIMUM RATINGS: (TA=25°C) MARKING MARKING MARKING MARKING CODE , mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: SYMBO L > ID 'r !r 'r 'r cc (Ta = , Semiconductor Corp. CMPD3003 CMPD3003 CMPD3003A CMPD3003A CMPD3003C CMPD3003C CMPD3003S CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE ... OCR Scan
datasheet

2 pages,
52.57 Kb

marking code 302 Marking Code .25c sot23 Diode Marking ef DIODE MARKING CODE G SOT23 302 SOT-23 DIODE MARKING 303 SOT23 CMPD3003 CMPD3003A CMPD3003C CMPD3003S CMPD3003 abstract
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Abstract: CMPD6001 CMPD6001 CMPD6001A CMPD6001A CMPD6001C CMPD6001C CMPD6001S CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central , extremely low leakage diode. The following configurations are available: CMPD6001 CMPD6001 SINGLE CMPD6001A CMPD6001A , ) SYMBOL VR V RRM MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: ULO ULA ULC ULS , Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL lR Vb r VF VF , CMPD6001A CMPD6001A CMPD6001C CMPD6001C cmpdgoois Sem iconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE ... OCR Scan
datasheet

2 pages,
51.36 Kb

marking VB DIODE CMPD6001 CMPD6001A CMPD6001C CMPD6001S CMPD6001 abstract
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Abstract: Characteristics) BB 204 B BB 204 G Type BB 204 B BB 204 G Marking blue green Ordering Code , BB 204 G Electrical Characteristics per Diode at 7a = 25 'C, unless otherwise specified. , Aktiengesellschaft 260 6 E35 b Q 5 Q 0 b b b 7 3 TIM BB 204 B BB 204 G Diode capacitance Ct = /(V r , SIEM ENS Silicon Variable Capacitance Diode · For FM tuners · Monolithic chip with common cathode , max. V V^BR) 7r 32 3 0V - - = 30 V, Ta = 60 'C 20 0.2 39 42 nA nA PF Diode ... OCR Scan
datasheet

3 pages,
93.33 Kb

marking code BB Diode C 38 marking code diode Q62702B datasheet abstract
datasheet frame
Abstract: BBY59 BBY59. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning voltage , single LS(nH) Marking 0.6 RR Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature Value 15 , Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f , BBY59 BBY59. Diode capacitance CT = (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = ... Original
datasheet

6 pages,
49.27 Kb

BBY59 BBY59-02V BBY59 abstract
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Abstract: BBY59 BBY59. Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage , Diode reverse voltage Forward current Operating temperature range Storage temperature Package SC79 Configuration single LS (nH) Marking 0.6 RR Symbol VR IF Top Tstg Value 15 50 -55 . 150 -55 . 150 , = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = , max. nA typ. IR 20 100 2 Jul-18-2002 BBY59 BBY59. Diode capacitance CT = (VR ) f = ... Original
datasheet

6 pages,
484.32 Kb

G code marking for diode BBY59 BBY59 abstract
datasheet frame
Abstract: BB545 BB545 /BB565 /BB565. Silicon Variable Capcitance Diode For UHF-TV-tuners High capacitance ratio Low , SC79 Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white U CC C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R , current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V , Diode capacitance CT = (VR ) f = 1MHz Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz VR = ... Original
datasheet

9 pages,
504 Kb

BB545 /BB565 BB545 abstract
datasheet frame
Abstract: CMPD1001S CMPD1001S HIGH CURRENT SWITCHING DIODE - F- i G 2 i H I R3 DIMENSIONS SY M B O L A , CMPD1001 CMPD1001 CMPD1001A CMPD1001A CMPD1001S CMPD1001S HIGH CURRENT SWITCHING DIODE Central" Semiconductor Corp. , following configurations are available: CMPD1001 CMPD1001 CMPD1001S CMPD1001S CMPD1001A CMPD1001A MAXIMUM RATINGS: (TA =25°C) SIN G LE DUAL, IN S E R IE S DUAL, C O M M O N AN O DE SYM BO L MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 UNITS 90 250 600 600 6.0 1.0 350 -65 t o +150 357 V mA mA mA A A mW °C °C/W ... OCR Scan
datasheet

2 pages,
46.85 Kb

marking JG SOT-23 marking code LE SOT 23 L21 marking code MARKING SY SOT23 CMPD1001 CMPD1001A CMPD1001S CMPD1001 abstract
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Abstract: SOT-23 DESCRIPTION D U A L S W IT C H IN G DIO D E, IS O LA T E D D U A L H IGH C U R R E N T DIODE, ISO LA T E D L E A D L E S S S W IT C H IN G D IO D E H IG H VOLTAGE S W IT C H IN G D IO D E L E A D , H IG H VOLTAGE S W IT C H IN G DIODE, IN S E R IE S DU A L S W IT C H IN G DIODE. C O M M O N A N O D E D U A L S W IT C H IN G DIODE, C O M M O N C ATH O DE S IN G L E S W IT C H IN G D IO D E S IN G , DIO D E. IN S E R IE S D U A L S W IT C H IN G DIODE. IN S E R IE S v mM (VOLTS) MAX 85 60 100 250 ... OCR Scan
datasheet

1 pages,
37.37 Kb

sot-23 MARKING CODE N C sot-23 MARKING CODE 28 1N4148 diode SMD type js 1 diode smd sot23 smd marking 1N4148 smd diode marking code L51 SMD DIODE La 5C sot23 DIODE MARKING CODE G SOT23 Diode SOT-23 marking Js 1N4148 diode SMD smd code A82 BAS28 BAS56 BAS28 abstract
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Datasheet Content (non pdf)

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amplifiers Diode output offset current, I os(d) (max) (nA) Diode current amplifiers Amplification, G dn amplifiers Amplification, G dn (dB) Diode current amplifiers Amplification, G dn (dB) Diode Amplification, G dn (dB) Diode current amplifiers -3 dB bandwidth, B (min.) (kHz) RFE amplifier ) Diode current amplifiers Amplification, G dn (dB) Diode current amplifiers Diode output offset ) Diode current amplifiers Amplification, G dn (dB) Diode current amplifiers -3 dB bandwidth, B
www.datasheetarchive.com/files/philips/pip/tda1300t_tt_3-v2.html
Philips 14/02/2002 12.33 Kb HTML tda1300t_tt_3-v2.html
MECHANICAL DATA SOT-93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value STPS3045CP/CPI/CW STPS3045CP/CPI/CW STPS3045CP/CPI/CW STPS3045CP/CPI/CW 4/6 Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value U.S.A. Marking : Type number Cooling method: C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum current Per diode 30 A I F(AV) Average forward current d = 0.5 SOT-93 TO-247 Tc = 135 5 C Per diode 15 Per diode 220 A I RRM Peak repetitive reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3509-v1.htm
STMicroelectronics 14/06/1999 6.74 Kb HTM 3509-v1.htm
MECHANICAL DATA SOT-93 Marking : Type number Cooling method : C Weight : 5.3 g Recommended torque value STPS3045CP/CPI/CW STPS3045CP/CPI/CW STPS3045CP/CPI/CW STPS3045CP/CPI/CW 4/6 Marking : Type number Cooling method : C Weight : 4.7 g Recommended torque value U.S.A. Marking : Type number Cooling method: C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum current Per diode 30 A I F(AV) Average forward current d = 0.5 SOT-93 TO-247 Tc = 135 5 C Per diode 15 Per diode 220 A I RRM Peak repetitive reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3509.htm
STMicroelectronics 02/04/1999 6.78 Kb HTM 3509.htm
Code (12nc) Marking/Packing Specific Package Device Status TZA3043BU/C2/G 9352 686 88026 No Marking * Die In Waffle Carriers Uncased die CQS TZA3043BU/F/C2 TZA3043BU/F/C2 TZA3043BU/F/C2 TZA3043BU/F/C2 9352 680 40005 No Marking * Chips on Wafer, Pre-Sawn, On FFC Uncased die amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to external components required Single supply voltage from 3.0 to 5.5 V Bias voltage for PIN diode
www.datasheetarchive.com/files/philips/pip/tza3043_b_4.html
Philips 23/04/2003 6.28 Kb HTML tza3043_b_4.html
- United Kingdom - U.S.A PACKAGE MECHANICAL DATA SOT223 Marking : Type number Weight : 0.11 g 1.5 Per diode 1.4 A I F(AV) Average Forward Current T L = 135 5 C d = 0.5 Per diode Per device 1 2 A I FSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal Per diode 10 A I RRM Peak Repetitive Reverse Current tp = 2 m s F = 1KHz Per diode 1 A Tstg Tj Storage and Junction Temperature Range - 65 to + Total Per diode 12 20 55 5 C/W R TH (c) Coupling 5 5 C/W 1 = A 1 2 = K 3 = A 2 4 = K PRELIMINARY
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3507-v1.htm
STMicroelectronics 14/06/1999 4.65 Kb HTM 3507-v1.htm
- United Kingdom - U.S.A PACKAGE MECHANICAL DATA SOT223 Marking : Type number Weight : 0.11 g 1.5 Per diode 1.4 A I F(AV) Average Forward Current T L = 135 5 C d = 0.5 Per diode Per device 1 2 A I FSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal Per diode 10 A I RRM Peak Repetitive Reverse Current tp = 2 m s F = 1KHz Per diode 1 A Tstg Tj Storage and Junction Temperature Range - 65 to + Total Per diode 12 20 55 5 C/W R TH (c) Coupling 5 5 C/W 1 = A 1 2 = K 3 = A 2 4 = K PRELIMINARY
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3507.htm
STMicroelectronics 02/04/1999 4.69 Kb HTM 3507.htm
/3 PACKAGE MECHANICAL DATA SOT223 Marking : Type number Weight : 0.11 g 1.5 1.5 3.3 1.2 2.3 (3x) 4.6 Parameter Value Unit V RRM Repetitive Peak Reverse Voltage 60 V I F(RMS) RMS Forward Current Per diode 1.4 A I F(AV) Average Forward Current T L = 130 5 C d = 0.5 Per diode Per device 1 2 A I FSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal Per diode 10 A I RRM Peak Repetitive Reverse Current tp = 2 m s F = 1KHz Per diode 1 A Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to +
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3508.htm
STMicroelectronics 02/04/1999 4.55 Kb HTM 3508.htm
/3 PACKAGE MECHANICAL DATA SOT223 Marking : Type number Weight : 0.11 g 1.5 1.5 3.3 1.2 2.3 (3x) 4.6 Parameter Value Unit V RRM Repetitive Peak Reverse Voltage 60 V I F(RMS) RMS Forward Current Per diode 1.4 A I F(AV) Average Forward Current T L = 130 5 C d = 0.5 Per diode Per device 1 2 A I FSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal Per diode 10 A I RRM Peak Repetitive Reverse Current tp = 2 m s F = 1KHz Per diode 1 A Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to +
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3508-v1.htm
STMicroelectronics 14/06/1999 4.51 Kb HTM 3508-v1.htm
values) (Per diode). STPR1020CT/STPR1020CF STPR1020CT/STPR1020CF STPR1020CT/STPR1020CF STPR1020CT/STPR1020CF 4/6 Cooling method : C Marking : Type number Weight : 2.08 g United King dom - U.S.A. Cooling method : C Marking : Type number Weight : 2.23 g Recommended torque I F(RMS) RMS forward current Per diode 10 A I F(AV) Average forward current d = 0.5 TO220AB Tc=125 5 C Per diode 5 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc=115 5 C Per device 10 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 50 A T stg Tj Storage temperature range Maximum junction temperature - 65 to
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3452.htm
STMicroelectronics 02/04/1999 6.53 Kb HTM 3452.htm
current. (maximum values) (Per diode). STPR620CT/STPR620CF STPR620CT/STPR620CF STPR620CT/STPR620CF STPR620CT/STPR620CF 4/6 Cooling method : C Marking : Type method : C Marking : Type number Weight : 2.23 g Recommended torque value : 0.8m.N Maximum torque RRM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 10 A I F(AV) Average forward current d = 0.5 TO220AB Tc=125 5 C Per diode 3 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc=120 5 C Per device 6 I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 30 A T stg Tj
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3460.htm
STMicroelectronics 20/10/2000 8.59 Kb HTM 3460.htm