500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

G marking diode

Catalog Datasheet MFG & Type PDF Document Tags

BBY57-05W E6327

Abstract: BBY57-02W BBY57. Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series , Marking 55 5 55 D5s * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V , -19-2003 BBY57. Diode capacitance CT = (VR ) f = 1MHz 40 pF Normalized diode capacitance C(TA) /C(25
Infineon Technologies
Original
BBY57-02W BBY57-05W E6327 BBY57-02L BBY57-02V BBY57-05W SCD80

H6327

Abstract: E6327 BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low series , single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating , Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = , BBY57. Diode capacitance CT = (VR) f = 1MHz Normalized diode capacitance C(TA)/C(25°C)= (TA); f
Infineon Technologies
Original
SP000745054 H6327 E6327 PG-SCD80-2-1 UM-38 BAR88-02V H6327 H7902 SP000012234 SP000012235 SP000104706 SP000013174 SP000013175 SP000012921

SCD80

Abstract: BB545 /BB565. Silicon Variable Capcitance Diode For UHF-TV-tuners High capacitance ratio Low , SC79 Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white U CC C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R , current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V , . Diode capacitance CT = (VR ) f = 1MHz Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz VR =
Infineon Technologies
Original
BB565/-02V BB565 BB565/

SCD80

Abstract: CT 0.4-P BB535 /BB555. Silicon Tuning Diode For UHF-TV-tuners High capacitance ratio Low series , Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white S BB B Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current , 30 V, TA = 85 °C Electrical Characteristics Parameter AC Characteristics Diode capacitance VR = 1 V , Application Note 047 2 Nov-07-2002 BB535 /BB555. Diode capacitance CT = (VR ) f = 1MHz 20 pF -
Infineon Technologies
Original
CT 0.4-P BB555/-02V BB555 BB555-02V

marking code INFINEON

Abstract: diode marking 180 BBY57. Silicon Tuning Diode â'¢ Excellent linearity â'¢ High Q hyperabrupt tuning diode â , 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25° unless otherwise specified C, Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA , - 10 VR = 8 V, TA = 85 ° C - - 100 AC Characteristics Diode capacitance pF , . Diode capacitance CT = Æ' (VR) Normalized diode capacitance f = 1MHz C(TA)/C(25°C)= Æ'(TA); f
Infineon Technologies
Original
marking code INFINEON diode marking 180

LN2004

Abstract: INFINEON date code marking BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low , 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 8 V VR = 8 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 , - Unit max. nA typ. IR 10 100 pF 2 2005-11-24 BBY57. Diode capacitance
Infineon Technologies
Original
LN2004 INFINEON date code marking

diode marking code 7

Abstract: marking code INFINEON BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low , Configuration single single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage , AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 16.5 17.5 18.6 , 0.3 - 2 2007-04-20 BBY57. Diode capacitance CT = (VR) Normalized diode capacitance
Infineon Technologies
Original
diode marking code 7 DIODE T4 marking marking G SOT323 Transistor AEC marking DIODE T4 marking 3 TERMINAL marking ag diode

1N50xx

Abstract: SMD zener marking code 102 Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage , Zener Diode SMD Diode Specialist Characteristics Curves (1N5221B-G Thru. 1N5267B-G) Fig.1- Power , (max) Marking Code Part Number Marking Code 1N5221-G ~ 1N5267-G 1N50XXB Cathode band , 0.020(0.52)Typ. -Marking: Type number -Weight: 0.13gram Dimensions in inches and (millimeter , temperature. REV: B QW-BZ001 Page 1 Comchip Glass Silicon Zener Diode SMD Diode Specialist
-
Original
1N50xx SMD zener marking code 102 1N5221B-G 1N5267B-G DO-35 MIL-STD-750 1N5266B-G 1N5266B

ZENER DIODE marking l2

Abstract: smd diode marking code g Glass Silicon Zener Diode Comchip SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage , Page 2 Glass Silicon Zener Diode Characteristics Curves (1N5221B-G Thru. 1N5267B-G) Fig.1- Power , ) 0.197± 0.020 2.047 ± 0.059 0.047 (max) 0.236 ± 0.016 0.032(max) Marking Code Part Number 1N5221-G ~ 1N5267-G Marking Code 1N50XXB Cathode band 1N 52 XXB XX : Product type marking code (see page , . -Marking: Type number -Weight: 0.13gram Dimensions in inches and (millimeter) Maximum Ratings and
Comchip Technology
Original
1N5235B-G 1N5250B ZENER DIODE marking l2 smd diode marking code g zener voltage for diode 1N5231B SMD ZENER DIODE MARKING CODE G SILICON PLANAR zener diode DO-35 1N5222B SMD diode 1N5222B-G 1N5223B-G 1N5224B-G 1N5225B-G 1N5226B-G 1N5227B-G

diode marking code 88

Abstract: marking code 62 3 pin diode BBY58. Silicon Tuning Diodes · Excellent linearity · High Q hyperabrupt tuning diode · Low , ) 0.4 0.6 0.6 0.6 1.4 1.4 0.4 Marking 88 8 88 8 yel. B5s B6s B8 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range , Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = , . max. Unit nA 10 100 2 Jul-25-2003 BBY58. Diode capacitance CT = (VR) f = 1MHz 32
Infineon Technologies
Original
diode marking code 88 marking code 62 3 pin diode sot323 marking code A.C MARK A SCD80 BBY58-02L/V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4

SCD80

Abstract: SCD-80 BB669/BB689. Silicon Tuning Diode For VHF 2-Band-hyperband-TV-tuners Very high capacitance , Configuration single single Single LS(nH) 1.8 0.6 0.6 Marking 1 EE E Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current , otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz , -27-2003 BB669/BB689. Diode capacitance CT = (VR ) f = 1MHz 60 pF Temperature coefficient of the diode
Infineon Technologies
Original
SCD-80 marking code of 0 to Z BB669 BB689 BB689-02V

E6433

Abstract: MARKING CODE 213 BBY53. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning voltage , single single, leadless single common cathode LS(nH) 2 0.4 0.6 0.6 0.4 1.8 1.4 Marking S7s LL L LL , Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 4 V VR = 4 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V , GHz 2 Jul-26-2004 BBY53. Diode capacitance CT = (VR) f = 1MHz 10 pF Capacitance
Infineon Technologies
Original
E6433 MARKING CODE 213 diode marking code 58 BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53-05W

philips zener diode c24

Abstract: Zener diode smd marking code .18 types · Supplied in 12 mm embossed tape and reel, 1500 and 7500 pieces · Marking: cathode, date code , marking band indicates the cathode. OUTLINE VERSION SOD124 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN , pieces Marking: cathode, date code, type name Easy pick and place. top Datasheet Title Publication , voltage 3/6/2003 regulator diodes Product specification Download Download PDF File file:///G , 270 Description Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode
Philips Semiconductors
Original
philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode M3D168 BZG01 MBL143 HTML04232003/BZG01-C10

marking code INFINEON

Abstract: sod323 diode marking code AC BBY51. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning , Configuration common cathode single, leadless single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II H Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode , - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 5.05 , . Diode capacitance CT = (VR) Temperature coefficient of the diode f = 1MHz capacitance TCc =
Infineon Technologies
Original
BBY51-02L BBY51-02W BBY51-03W sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 DIODE Q marking MARKING 54 "Pin Diode" 85 marking code of diode

DIODE Q marking

Abstract: sod323 diode marking code AC BB535/BB555. Silicon Tuning Diode · For UHF-TV-tuners · High capacitance ratio · Low series , LS(nH) 1.8 0.6 0.6 Marking white S BB B Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage VRM 35 , Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 17.5 18.7 20 VR = 2 V, f = 1 MHz , BB535/BB555. Diode capacitance CT = (VR) Normalized diode capacitance f = 1MHz C(TA)/C(25
Infineon Technologies
Original
SC79
Abstract: Configuration single single LS(nH) 1.8 0.6 Marking yellow S DE Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse , VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 200 AC Characteristics Diode , % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc BB639 - - 2.5 - 0.3 1 - 0.4 2 - 0.65 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc BB659 VR = 1 V, VR Infineon Technologies
Original
BB639/BB659

marking 297

Abstract: 0.6 Marking yellow S DE Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage , Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f , = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc BB639 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc BB659 Series resistance VR = 5 V, f
Infineon Technologies
Original
marking 297

DIODE Q marking

Abstract: infineon marking code bb659 SCD80 Configuration single single LS(nH) 1.8 0.6 Marking yellow S DE Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 , , TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 , diode sequenc - - 2.5 - 0.3 1 - BB639 0.4 2 - 0.65 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc
Infineon Technologies
Original
infineon marking code bb659 BAR63-02W SC75

BBY51

Abstract: BBY51. Silicon Tuning Diode â'¢ High Q hyperabrupt tuning diode â'¢ Designed for low tuning , single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II white H Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 7 Forward , 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz , BBY51. Diode capacitance CT = Æ' (VR ) Temperature coefficient of the diode f = 1MHz
Infineon Technologies
Original

SCD80

Abstract: marking code INFINEON BB639C/BB659C. Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF , single single LS (nH) 1.8 0.6 0.6 Marking yellow S HH H Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse , Diode capacitance pF CT VR = 1 V, f = 1 MHz 36.5 39 42 VR = 2 V, f = 1 MHz 27 , -07-2002 BB639C/BB659C. (VR ) Temperature coefficient of the diode capacitance TCc = f = 1MHz
Infineon Technologies
Original
BB639C BB659C BB659C-02V INFINEON marking marking code diode 04 Z A MARKING 305 marking code Marking code L SOD323 marking code f 25 x BB659C/-02V
Showing first 20 results.