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ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218AIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil
ISL58315CRTZ-T7 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218DIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil

G marking diode

Catalog Datasheet MFG & Type PDF Document Tags

BBY57-05W E6327

Abstract: BBY57-02W BBY57. Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series , Marking 55 5 55 D5s * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V , -19-2003 BBY57. Diode capacitance CT = (VR ) f = 1MHz 40 pF Normalized diode capacitance C(TA) /C(25
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BBY57-02W BBY57-05W E6327 BBY57-02L BBY57-02V BBY57-05W SCD80

H6327

Abstract: E6327 BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low series , single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating , Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = , BBY57. Diode capacitance CT = (VR) f = 1MHz Normalized diode capacitance C(TA)/C(25°C)= (TA); f
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SP000745054 H6327 E6327 PG-SCD80-2-1 UM-38 BAR88-02V H6327 H7902 SP000012234 SP000012235 SP000104706 SP000013174 SP000013175 SP000012921

SCD80

Abstract: BB545 /BB565. Silicon Variable Capcitance Diode For UHF-TV-tuners High capacitance ratio Low , SC79 Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white U CC C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R , current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V , . Diode capacitance CT = (VR ) f = 1MHz Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz VR =
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BB565/-02V BB565 BB565/

SCD80

Abstract: CT 0.4-P BB535 /BB555. Silicon Tuning Diode For UHF-TV-tuners High capacitance ratio Low series , Configuration single single single LS (nH) 1.8 0.6 0.6 Marking white S BB B Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current , 30 V, TA = 85 °C Electrical Characteristics Parameter AC Characteristics Diode capacitance VR = 1 V , Application Note 047 2 Nov-07-2002 BB535 /BB555. Diode capacitance CT = (VR ) f = 1MHz 20 pF -
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CT 0.4-P BB555/-02V BB555 BB555-02V

marking code INFINEON

Abstract: diode marking 180 BBY57. Silicon Tuning Diode â'¢ Excellent linearity â'¢ High Q hyperabrupt tuning diode â , 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25° unless otherwise specified C, Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA , - 10 VR = 8 V, TA = 85 ° C - - 100 AC Characteristics Diode capacitance pF , . Diode capacitance CT = Æ' (VR) Normalized diode capacitance f = 1MHz C(TA)/C(25°C)= Æ'(TA); f
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marking code INFINEON diode marking 180

LN2004

Abstract: INFINEON date code marking BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low , 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 8 V VR = 8 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 , - Unit max. nA typ. IR 10 100 pF 2 2005-11-24 BBY57. Diode capacitance
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LN2004 INFINEON date code marking

diode marking code 7

Abstract: marking code INFINEON BBY57. Silicon Tuning Diode · Excellent linearity · High Q hyperabrupt tuning diode · Low , Configuration single single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage , AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 16.5 17.5 18.6 , 0.3 - 2 2007-04-20 BBY57. Diode capacitance CT = (VR) Normalized diode capacitance
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diode marking code 7 DIODE T4 marking marking G SOT323 Transistor AEC marking DIODE T4 marking 3 TERMINAL marking ag diode

1N50xx

Abstract: SMD zener marking code 102 Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage , Zener Diode SMD Diode Specialist Characteristics Curves (1N5221B-G Thru. 1N5267B-G) Fig.1- Power , (max) Marking Code Part Number Marking Code 1N5221-G ~ 1N5267-G 1N50XXB Cathode band , 0.020(0.52)Typ. -Marking: Type number -Weight: 0.13gram Dimensions in inches and (millimeter , temperature. REV: B QW-BZ001 Page 1 Comchip Glass Silicon Zener Diode SMD Diode Specialist
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1N50xx SMD zener marking code 102 1N5221B-G 1N5267B-G DO-35 MIL-STD-750 1N5266B-G 1N5266B

ZENER DIODE marking l2

Abstract: smd diode marking code g Glass Silicon Zener Diode Comchip SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage , Page 2 Glass Silicon Zener Diode Characteristics Curves (1N5221B-G Thru. 1N5267B-G) Fig.1- Power , ) 0.197± 0.020 2.047 ± 0.059 0.047 (max) 0.236 ± 0.016 0.032(max) Marking Code Part Number 1N5221-G ~ 1N5267-G Marking Code 1N50XXB Cathode band 1N 52 XXB XX : Product type marking code (see page , . -Marking: Type number -Weight: 0.13gram Dimensions in inches and (millimeter) Maximum Ratings and
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1N5235B-G 1N5250B ZENER DIODE marking l2 smd diode marking code g zener voltage for diode 1N5231B SMD ZENER DIODE MARKING CODE G SILICON PLANAR zener diode DO-35 1N5222B SMD diode 1N5222B-G 1N5223B-G 1N5224B-G 1N5225B-G 1N5226B-G 1N5227B-G

diode marking code 88

Abstract: marking code 62 3 pin diode BBY58. Silicon Tuning Diodes · Excellent linearity · High Q hyperabrupt tuning diode · Low , ) 0.4 0.6 0.6 0.6 1.4 1.4 0.4 Marking 88 8 88 8 yel. B5s B6s B8 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range , Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = , . max. Unit nA 10 100 2 Jul-25-2003 BBY58. Diode capacitance CT = (VR) f = 1MHz 32
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diode marking code 88 marking code 62 3 pin diode sot323 marking code A.C MARK A SCD80 BBY58-02L/V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4

SCD80

Abstract: SCD-80 BB669/BB689. Silicon Tuning Diode For VHF 2-Band-hyperband-TV-tuners Very high capacitance , Configuration single single Single LS(nH) 1.8 0.6 0.6 Marking 1 EE E Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current , otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz , -27-2003 BB669/BB689. Diode capacitance CT = (VR ) f = 1MHz 60 pF Temperature coefficient of the diode
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SCD-80 marking code of 0 to Z BB669 BB689 BB689-02V

E6433

Abstract: MARKING CODE 213 BBY53. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning voltage , single single, leadless single common cathode LS(nH) 2 0.4 0.6 0.6 0.4 1.8 1.4 Marking S7s LL L LL , Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top , current VR = 4 V VR = 4 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V , GHz 2 Jul-26-2004 BBY53. Diode capacitance CT = (VR) f = 1MHz 10 pF Capacitance
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E6433 MARKING CODE 213 diode marking code 58 BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53-05W

philips zener diode c47-

Abstract: philips zener diode c24 types · Supplied in 12 mm embossed tape and reel, 1500 and 7500 pieces · Marking: cathode, date code , marking band indicates the cathode. OUTLINE VERSION SOD124 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN , pieces Marking: cathode, date code, type name Easy pick and place. top Datasheet Title Publication , voltage 3/6/2003 regulator diodes Product specification Download Download PDF File file:///G , 270 Description Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode
Philips Semiconductors
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philips zener diode c47- philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 M3D168 BZG01 MBL143 HTML04232003/BZG01-C10

marking code INFINEON

Abstract: sod323 diode marking code AC BBY51. Silicon Tuning Diode · High Q hyperabrupt tuning diode · Designed for low tuning , Configuration common cathode single, leadless single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II H Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode , - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 5.05 , . Diode capacitance CT = (VR) Temperature coefficient of the diode f = 1MHz capacitance TCc =
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BBY51-02L BBY51-02W BBY51-03W sod323 diode marking code AC DIODE MARKING CODE LAYOUT G SOT23 DIODE PACKING CODE LAYOUT G SOT23 DIODE Q marking MARKING 54 "Pin Diode" 85 marking code of diode

DIODE Q marking

Abstract: sod323 diode marking code AC BB535/BB555. Silicon Tuning Diode · For UHF-TV-tuners · High capacitance ratio · Low series , LS(nH) 1.8 0.6 0.6 Marking white S BB B Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage VRM 35 , Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 17.5 18.7 20 VR = 2 V, f = 1 MHz , BB535/BB555. Diode capacitance CT = (VR) Normalized diode capacitance f = 1MHz C(TA)/C(25
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SC79
Abstract: Configuration single single LS(nH) 1.8 0.6 Marking yellow S DE Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse , VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 200 AC Characteristics Diode , % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc BB639 - - 2.5 - 0.3 1 - 0.4 2 - 0.65 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc BB659 VR = 1 V, VR Infineon Technologies
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BB639/BB659

marking 297

Abstract: 0.6 Marking yellow S DE Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage , Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f , = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc BB639 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc BB659 Series resistance VR = 5 V, f
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marking 297

DIODE Q marking

Abstract: infineon marking code bb659 SCD80 Configuration single single LS(nH) 1.8 0.6 Marking yellow S DE Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 , , TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 , diode sequenc - - 2.5 - 0.3 1 - BB639 0.4 2 - 0.65 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc
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infineon marking code bb659 BAR63-02W SC75

BBY51

Abstract: BBY51. Silicon Tuning Diode â'¢ High Q hyperabrupt tuning diode â'¢ Designed for low tuning , single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II white H Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 7 Forward , 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz , BBY51. Diode capacitance CT = Æ' (VR ) Temperature coefficient of the diode f = 1MHz
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SCD80

Abstract: marking code INFINEON BB639C/BB659C. Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF , single single LS (nH) 1.8 0.6 0.6 Marking yellow S HH H Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse , Diode capacitance pF CT VR = 1 V, f = 1 MHz 36.5 39 42 VR = 2 V, f = 1 MHz 27 , -07-2002 BB639C/BB659C. (VR ) Temperature coefficient of the diode capacitance TCc = f = 1MHz
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BB639C BB659C BB659C-02V INFINEON marking marking code diode 04 Z A MARKING 305 marking code Marking code L SOD323 marking code f 25 x BB659C/-02V
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