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LTC6990CS6#TRPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6990HS6#PBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6990IS6#PBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6990CS6#TRMPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6990IS6#TRPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6990MPS6#TRMPBF Linear Technology LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature Range: -55°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy

Fujitsu Silicon Darlington Transistor Array

Catalog Datasheet MFG & Type PDF Document Tags

FT5778M

Abstract: January 1990 Edition 1.1 FTS778M PRODUCT PROFILE FUJITSU Silicon Darlington Transistor Array A B SO LU T E M A X IM U M R A T IN G S (Ta = 25°C) Symbol Conditions Value NPN PNP -55 - +150 , Pt DLT: Darlington Transistor E L E C T R IC A L C H A R A C T E R IS T IC S (SINGLE DARLINGTO N TRANSISTOR OPERATION) , -` Pulsed Pw ^ 300 jus, D . R . ^ * 6% Viso Copyright© I I » by FUJITSU U U T E D and Fu|Utl
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FT5778M

FT5753M

Abstract: ft5753m DARLINGTON TRANSISTOR ARRAY January 1990 Edition 1.1 FT5753M, FT5756M - P R O D U C T P R O F IL E FUJITSU Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ R a tin g S to ra g e T e m p e ra tu re J u n c tio n T e m p e ra tu re C o lle c to r to Base V o lta g e E m itte r t o Base V o , arlington Transistor O peration (T a = 2 5 °C ) L im it S ym bol Test C o n d itio n M in . l c - 100 , © 1990 by FUJITSU LIMITED n k) FuJtaU M cratecfro n Jcs, Inc. 3-9 FT5753M, FT5756M DC CUR R E N
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ft5753m DARLINGTON TRANSISTOR ARRAY FT5753 Fujitsu Silicon Darlington Transistor Array

ft5764m

Abstract: Fujitsu Silicon Darlington Transistor Array January 1990 Edition 1.1 PRODUCT PROFILE. FUJITSU Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS R a tin g S to ra g e T e m p e ra tu re J u n c t io n T e m p e ra tu re C o lle c t o r to B ase V o lta g e E m it t e r to Base V o lta g e C o lle c t o r to E m it t e r V o lta g e (C o n tin u o u s ) C o lle c t o r C u rr e n t {P u lse d 1 Base C u rr e n t {C o n tin u , % Copyright© 1990 by FUJITSU LIMTED and Fuptw Mkrottocfronlc*, Inc. 3-23 FT5764M, FT5767M DC C U R
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FT5764

FT5764M

Abstract: FT5764 FUJITSU MICROELECTRONICS 31E D E3 374^2 D01bfc,7b T H F MI çp r-WlS _ FUJITSU January 1990 Edition 1.1 PRODUCT PROFILE - FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM , : Darlington Transistor ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation (Ta = 25 , ) FORWARD BIAS SAFE OPERATING AREA _Ta = 25°C Single Darlington Transistor Ã"perati'on E 10 20 50 100 , © 19» by FUJITSU U Id TED tnd FuJmj UcroeMcïonlc», Inc. 3-23 FUJITSU MICROELECTRONICS FT5764M
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T-43-25 FT57 10/JA

FT5760M

Abstract: Fujitsu Silicon Darlington Transistor Array FUJITSU MICROELECTRONICS 31E D Q 374=ì?b2 D01bb?a 1 E3FMI January 1990 Edition 1.1 PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array Fujitsu ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Condition Value Unit Storage Temperature Tjtg -55 ~ +150 °C Junction Temperature T , 21 W DLT: Darlington Transistor m ELECTRICAL CHARACTERISTICS Single Darlington Transistor , ») Pulsed Pulse Width = 50 jus Duty Ratio g 6% Duty Ratio g 1 % CeppIgM© 19» by FUJITSU UUTED tnd Fufau
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FT5760

FT5754M

Abstract: FT5754 FUJITSU MICROELECTRONICS 31E » January 1990 Edition 1.1 - PRODUCTPROFILE- 374 , -DLT opération 21 W (») Fast recovery Diode DLT: Darlington Transistor ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation (Ta = 25°C) Parameter Symbol Test Condition Limit Unit , Duty Ratio < 6% Duty Ratio < 1 % CopyiljM© two by FUJITSU UUTED tnd Fufttu WcroätMUonlc«, Inc
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FT5754M FT5757M FT5754 FT5754M Pin FT5757 B-500 diode

FT5755M

Abstract: FT5758M FUJITSU MICROELECTRONICS 31E D E3 374cí7b5 DDlbbbb 7 QFMI January 1990 Edition 1.1 PRODUCT PROFILE- FUJITSU FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS (Ta = , Diode ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation DLT: Darlington Transistor , jus Duty Ratio < 6% Duty Ratio ¿1% 'opyilsht© 1W0 by FUJITSU UUTEO ând FufUu Ucroclensnlca, Inc. 3-13 FUJITSU MICROELECTRONICS 31E J> ⡠374=17^ GQlbbb? 1 DFHI T-43-25 FT5755M, FT5758M DC
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ft5758m DARLINGTON TRANSISTOR ARRAY FT5758

FT5763M

Abstract: FT5763 FUJITSU MICROELECTRONICS 31E D Q 374=57^5 001bb74 t> E3FMI FUJITSU January 1990 Edition 1.1 PRODUCT PROFILE - FT5763M, FT5766M Silicon Darlington Transistor Array FT5763M, FT5766M ABSOLUTE , recovery Diode DLTr Darlington Transistor ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation , fis (♦â'¢*) Pulse Pulse Width = 50 in Duty Ratio
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FT5763 VCC-30V1-I

FT5753M

Abstract: FT5756M FUJITSU MICROELECTRONICS 31E » E3 BTMITbE 0Qlbbb2 T QFMI T-tz-asr FUJITSU January 1990 Edition 1.1 PRODUCT PROFILEZ FT5753M, FT5756M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM , °C: 4-DLT operation 19 W («) Fast recovery Diode DLT: Darlington Transistor ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation (Ta = 25 C) Parameter Symbol Test Condition Limit , (â'¢Â»Â») Pulsed Pulse Width = 50 jus Duty Ratio < 6% Duty Ratio < 1% CoplTljhl© 1000 by FUJITSU UUITED
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ft575

SS510

Abstract: transistor 2 Amp 3 volt FUJITWITICROELECTRONICS 37C D 1 374=171,2 GOaiflbM 2 FUJITSU 2SD560 MICROELECTRONICS il^lbl FUJITSU MICROELECTRONICS -3 7L 0186^ SILICON NPN EPITAXIAL * DARLINGTON TRANSISTOR 5 AMP, 100 VOLT DESCRIPTION The 2SD560 is a low cost Darlington array which is perfectly suited for increasing TTL levels to , dimensions. 3-3 FUJITSU MICROELECTRONICS 37C D 1 374^7^ DGDlflbS r 37^9762 FUJITSU "MICROELECTRONICS , Current Waveform" Gà 1-44» 44+- â'¢on 'stg 'f Ibi 'B2 3-4 FUJITSU MICROELECTRONICS 37C D â
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RM-60 SS510 transistor 2 Amp 3 volt transistor A11 220 fujitsu transistor npn 8 transistor array TQ-220

FT5753M

Abstract: FT5754M in inch (mm) FUJITSU PKQ No. RM47 3-6 Power Transistor Products Darlington Transistor , in ductive tu rn -o ff. The darlington transistor array series (F T 575 3M , F T 5754M , F T5755M , F , Power Transistor Products Darlington Transistor Arrays INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays , Transistor Products Darlington Transistor Arrays C IR C U IT A N D P IN A S S IG N M E N T 9 10
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FT5770M FT5761M ft5769m d5 transistor npn PNP DARLINGTON ARRAYS ft5769 T5759M FT5769M FT5776M FT5786M

FT5778M

Abstract: T-43-25 FUJITSU MICROELECTRONICS 31Ã' D â¡ 374=i7fci2 ODlbbTO M EIFMI öO T-M'Xr FUJITSU January 1990 Edition 1.1 PRODUCT PROFILE- FT5778M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM , : Darlington Transistor ELECTRICAL CHARACTERISTICS (SINGLE DARLINGTON TRANSISTOR OPERATION) [NPN , = -1b2 = -6 mA - 0.5 - lis Copyright© 1990 by FUJITSU UM1TE0 ind Fufuu Wcroaleciroflle», Inc. 'Pulsed Pw < 300 Ãs, D.R. E3FHI T
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pnp DARLINGTON TRANSISTOR ARRAY til 31a VCC-50V CC--30V

FT5759M

Abstract: January 1990 Edition 1.1 PRODUCT PROFILE . FUJITSU FT5759M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Rating Storage Temperature Junction Temperatu re Collector to , 25"C: 4-DLT operation 500 1.9 4 Pc Pt Pt W W w 19 DLT: Darlington Transistor ELE C TR IC A L C H A R A C TER IS TIC S Single Darlington Transistor Operation Parameter Collector to Base , Duty Ratio ^ 6% (* * ) Pulsed Pulse width = 50 jus Duty Ratio ^ 1% Copyright© IM O by FUJITSU
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FT5754M

Abstract: FT5757M January 1990 Edition 1.1 FT5754M, FT5757M Silicon Darlington Transistor Array Rating Storage Temperature Junction Temperature Collector to Base Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current (Continuous) (Pulsed) Base Current (Continuous) Symbol T S,S Ti ^CBO V ebo V CEO PRODUCT PROFILE' FUJITSU ABSO LUTE MAXIMUM RATINGS , D L T : Darlington Transistor E LE C T R IC A L CH A RA CTERISTIC S Single Darlington Transistor
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FT5761M

Abstract: ft5761 January 1990 Edition 1.1 PR O D U C T P R O FILE FUJITSU FT5761M Silicon Darlington Transistor Array FT5761M ABSOLUTE M AXIMUM RATINGS Rating Storage Tem perature Ju n ctio n Temperature Collector to Base Voltage E m itter to Base Voltage C ollector to E m itter Voltage (Continuous) C ollector C urrent (Pulsed) Sym bol T stg (Ta = 25°C) C o ndition Value -5 5 ~ +150 + 150 -1 0 0 -5 -100 , W W W D L T : D arlington Transistor ELECTRICAL CHARACTERISTICS Single Darlington Transistor
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ft5761

FT5758M

Abstract: FT5755M Januar/ 1990 Edition 1.1 PRODUCT PROFILE . FUJITSU FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS R a tin g S to ra g e T e m p e ra tu re J u n c tio n T e m p e ra tu re C o lle c to r t o Base V o lta g e E m itte r t o Base V o lta g e C o lle c to r t o E , n T ra n s is to r ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation L im it P , r lg h t© 1990 b y FUJITSU U liT E D a n d P u p tw M c ro a la O o n k « , Inc. (Ta = 2 5 °C ) T
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FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY

FT5760M

Abstract: TRANSISTOR A-318 January 1990 Edition 1.1 FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ Rating Storage Tem perature Jun ctio n Tem perature C ollector to Base Voltage E m itte r to Base Voltage Collector to E m itte r Voltage (Continuous) Collector C urrent (Pulsed) Sym bol T« 0 T¡ Vc80 V ebo VcEO !c Up Iß v , so PC Pt Py - P R O D U C T PR O FILE FUJITSU (Ta = 25°C ) C o , D L T : D arlington Transistor ELECTRICAL CHARACTERISTICS Single Darlington Transistor Operation
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TRANSISTOR A-318

FT5777M

Abstract: January 1990 Edition 1.1 PRODUCT PROFILE FUJITSU FT5777M Silicon Darlington Transistor Array A BSO LUTE M AXIM UM RATING S (Ta = 25°C) Sym b o l Strage? Tem perature Ju n c tio n Tem perature C o lle ctor to Base Voltag e Em itte r to Base Voltage C o lle ctor to E m itte r Voltage C o lle , 2.3 5 21 D L T : D arlington Transistor W V V V A A A -50 ~- +150 + 150 100 5 100 ±3 Up Ib P w , -Copyright© IMO by FUJITSU LIMITED and FuJtMl McrMtartronles, Inc. * Pulsed P w < 300 fis' D .R . g 6 %
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Abstract: January 1990 Edition 1.1 PRODUCT PROFILE FUJITSU FT5786M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S (Ta = 25°C ) Sym bol Storage Tem perature Junction Tem perature Collector to Base Voltage E m itte r to Base Voltage Collector to E m itte r Voltage Collector C urrent (Continuous) (Pulsed! Base C urrent (Continuous) Isolation Voltage C o lle ctor Power Dissipation , : Darlington Transistor ELE C TR IC A L C H A R A C TER IS TIC S (SIN G LE D A R L IN G T O N TR A N S IS T O R -
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FT5769M

Abstract: ft5769 January 1990 Edition 1.1 PRODUCT PROFILE FUJITSU FT5769M Silicon Darlington Transistor Array A BSO LUTE MAXIMUM RATINGS R a tin g S to ra g e T e m p e ra tu re J u n c t io n T e m p e ra tu re C o lle c to r to Base V o lta g e E m it t e r to Base V o lta g e C o lle c t o r to E m it t e r V o lta g e (C o n tin u o u s ) (P u lse d ) B ase C u rr e n t (C o n tin u o u s ! C o lle c , ) Collector t o Emittef Voltage Vçp 4-Dar! ngton Transistor Operation s Grefts» Hlari on ale osi :ior v
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